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In this work, the properties of ZnO films of 100 nm thickness, grown using atomic layer deposition (ALD) on a–(100) and c–(001) oriented Al2O3 substrate are reported. The films were grown in the same growth conditions and parameters at six different growth temperatures (Tg) ranging from 100 °C to 300 °C. All as-grown and annealed films were found to be polycrystalline, highly (001) oriented for the c–Al2O3 and highly (101) oriented for the a–Al2O3 substrate. The manifestation of semi-polar-(101) and polar (001)–oriented ZnO films on the same substrate provided the opportunity for a comparative study in terms of the influence of polarization on the electrical and structural properties of ZnO films. It was found that the concentration of hydrogen, carbon, and nitrogen impurities in polar (001)–oriented films was considerably higher than in semi-polar (101)–oriented ZnO films. The study showed that when transparent conductive oxide applications were considered, the ZnO layers could be deposited at a temperature of about 160 °C, because, at this growth temperature, the high electrical conductivity was accompanied by surface smoothness in the nanometer scale. On the contrary, semi-polar (101)–oriented films might offer a perspective for obtaining p-type ZnO films, because the concentration of carbon and hydrogen impurities is considerably lower than in polar films. [ABSTRACT FROM AUTHOR]

Energy consumption steadily increases and energy production is associated with many environmental risks, e.g., generating the largest share of greenhouse gas emissions. The primary gas pollution concern is CO2, CH4, and nitrogen oxides (NOx). Environmental catalysis plays a pivotal role in NOx mitigation (DeNOx). This study investigated, for the first time, a collection of ceramic foams as potential catalyst support for selective catalytic NOx reduction (SCR). Ceramic foams could be an attractive support option for NOx removal. However, we should functionalize the surface of raw foams for such applications. A library of ceramic SiC, Al2O3, and ZrO2 foams ornamented with nanorod ZnO and TiO2 as W and V oxide support was obtained for the first time. We characterized the surface layer coating structure using the XPS, XRF and SEM, and TEM microscopy to optimize the W to V molar ratio and examine NO2 mitigation as the SCR model, which was tested only very rarely. Comparing TiO2 and ZnO systems reveals that the SCR conversion on ZnO appeared superior vs. the conversion on TiO2, while the SiC-supported catalysts were less efficient than Al2O3 and ZrO2-supported catalysts. The energy bands in optical spectra correlate with the observed activity rank. [ABSTRACT FROM AUTHOR]

In this work, the properties of ZnO films of 100 nm thickness, grown using atomic layer deposition (ALD) on a -(100) and c -(001) oriented Al 2 O 3 substrate are reported. The films were grown in the same growth conditions and parameters at six different growth temperatures (T g ) ranging from 100 °C to 300 °C. All as-grown and annealed films were found to be polycrystalline, highly (001) oriented for the c -Al 2 O 3 and highly (101) oriented for the a -Al 2 O 3 substrate. The manifestation of semi-polar-(101) and polar (001)-oriented ZnO films on the same substrate provided the opportunity for a comparative study in terms of the influence of polarization on the electrical and structural properties of ZnO films. It was found that the concentration of hydrogen, carbon, and nitrogen impurities in polar (001)-oriented films was considerably higher than in semi-polar (101)-oriented ZnO films. The study showed that when transparent conductive oxide applications were considered, the ZnO layers could be deposited at a temperature of about 160 °C, because, at this growth temperature, the high electrical conductivity was accompanied by surface smoothness in the nanometer scale. On the contrary, semi-polar (101)-oriented films might offer a perspective for obtaining p-type ZnO films, because the concentration of carbon and hydrogen impurities is considerably lower than in polar films.

In order to effectively utilize the photovoltaic properties of gallium arsenide, its surface/interface needs to be properly prepared. In the experiments described here we examined eight different paths of GaAs surface treatment (cleaning, etching, passivation) which resulted in different external quantum efficiency (EQE) values of the tested photovoltaic (PV) cells. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) examinations were conducted to obtain structural details of the devices. X-ray photoelectron spectroscopy (XPS) with depth profiling was used to examine interface structure and changes in the elemental content and chemical bonds. The photoluminescence (PL) properties and bandgap measurements of the deposited layers were also reported. The highest EQE value was obtained for the samples initially etched with a citric acid-based etchant and, in the last preparation step, either passivated with ammonium sulfide aqueous solution or treated with ammonium hydroxide solution with no final passivation. Subsequent I - V measurements, however, confirmed that from these samples, only the sulfur-passivated ones provided the highest current density. The tested devices were fabricated by using the ALD method., (Copyright © 2021, Caban et al.)