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2. A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

3. Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics

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