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109 results on '"O'uchi, Shin-ichi"'

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1. Perturbative GAN: GAN with Perturbation Layers

16. Tunnel FinFET CMOS inverter with very low short-circuit current for ultralow-power Internet of Things application

18. Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability

19. Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET

20. Robust and compact key generator using physically unclonable function based on logic-transistor-compatible poly-crystalline-Si channel FinFET technology

21. 0.8-V rail-to-rail operational amplifier with near-Vt gain-boosting stage fabricated in FinFET technology for IoT sensor nodes

22. Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors

23. Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs

24. Unexpected equivalent-oxide-thickness dependence of the subthreshold swing in tunnel field-effect transistors

28. Suppressing Vt and Gm variability of FinFETs using amorphous metal gates for 14 nm and beyond

29. Decomposition of On-Current Variability of nMOS FinFETs for Prediction Beyond 20 nm

30. Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

31. Fin-Height Effect on Poly-Si/PVD-TiN Stacked-Gate FinFET Performance

32. A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology

34. Comprehensive analysis of Ion variation in metal gate FinFETs for 20nm and beyond

37. Static noise margin enhancement by flex‐pass‐gate SRAM

40. Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor

42. Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates

43. Static Noise Margin Enhancement by Flex-Pass-Gate SRAM

47. Cointegration of High-Performance Tied-Gate Three-Terminal FinFETs and Variable Threshold-Voltage Independent-Gate Four-Terminal FinFETs With Asymmetric Gate-Oxide Thicknesses

48. Four-Terminal FinFETs Fabricated Using an Etch-Back Gate Separation

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