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The effect of post-growth annealing treatment of zinc oxide (ZnO) nanorods on the electrical properties of their heterojunction diodes (HJDs) is investigated. ZnO nanorods are synthesized by the low-temperature aqueous solution growth technique and annealed at temperatures of 400 and 600°C. The as-grown and annealed nanorods are studied by scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. Electrical characterization of the ZnO/Si heterojunction diode is done by current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. The barrier height (ϕ B), ideality factor (n), doping concentration and density of interface states (N SS) are extracted. All HJDs exhibited a nonlinear behavior with rectification factors of 23, 1,596 and 309 at ±5 V for the as-grown, 400 and 600°C-annealed nanorod HJDs, respectively. Barrier heights of 0.81 and 0.63 V are obtained for HJDs of 400 and 600°C-annealed nanorods, respectively. The energy distribution of the interface state density has been investigated and found to be in the range 0.70 × 1010 to 1.05 × 1012 eV/cm2 below the conduction band from E C = 0.03 to E C = 0.58 eV. The highest density of interface states is observed in HJDs of 600°C-annealed nanorods. Overall improved behavior is observed for the heterojunctions diodes of 400°C-annealed ZnO nanorods.

The Polyethylene glycol (PEG) and Chitosan (CS)/silver nitrate (AgNO3) thin films were prepared by utilizing the casting technique to enhance their optical, dielectric, and electrical properties. Their physicochemical characteristics were investigated using a variety of techniques. The FT‐IR study demonstrates that the addition of AgNO3 NPs results in a discernible difference in the intensities and locations of vibrational peaks of all bands, supporting the incorporation of AgNO3NPs inside the PEG/CS. The XRD analysis indicates that the peak at 2θ = 23.1° broadens and strengthens proportionally with the increase of AgNO3 NPs. This observation suggests that the incorporation of AgNO3 NPs into PEG/CS results in a greater degree of amorphous characteristics compared to the PEG/CS blend. Additionally, when the amount of AgNO3 NPs increases in the PEG/CS, the energy band gap decreases, resulting in the creation of localized states between the valence and conduction bands. These polymer nanocomposite films' electrical conductivity, dielectric constant, and dielectric loss all increased with frequency increased and showed variance for various composite concentrations. These AgNO3NPs/PEG/CS films can be promising options for frequency‐tunable nanodielectrics, flexible dielectric substrates, and bandgap‐regulated materials for upcoming microelectronic, capacitive energy storage, and optoelectronic technologies, according to the experimental results. Highlights: AgNO3NPs/PEG/CS nanocomposites films were obtained.The optical properties of the prepared films were calculated.Optical energy‐gap for prepared samples was reduced after adding AgNO3NPs.The dielectric properties of the AgNO3NPs/PEG/CS films are improved.AgNO3NPs/PEG/CS films were suggested to be used in energy storage devices. [ABSTRACT FROM AUTHOR]

One-dimensional nanostructures hold the most attractive and excellent physiochemical characteristics which exhibit the paramount influence on the fundamental and technological nanoelectronic as well as nanophotonic applications. In this review article, we present a detailed introduction to the diverse synthetic procedures which can be utilized for the fabrication of single-, planar- and three-dimensional ZnO nanostructures. More specifically, a thorough discussion regarding luminescence characteristics of the one-dimensional ZnO nanostructures is presented for ultraviolet and visible regions. We summarize the room temperature spontaneous emission and stimulated emission along with the interaction of the incident beam with material cavity to produce resonant optical modes and low-temperature time resolved photoluminescence studies. The most recent published results on the white light emitting diodes fabricated with the combination of ZnO nanotubes with p-GaN and ZnO nanorods with p-organic polymers on glass and disposable paper are discussed. Additionally, the significant results on optically and electrically pumped lasers are discussed; along with an overview on the future of ZnO nanostructures based photonic devices.