Search

Your search keyword '"Normand, Antoine"' showing total 18 results
Start Over Author "Normand, Antoine"
18 results on '"Normand, Antoine"'

2. Development of an energy-sensitive detector for the Atom Probe Tomography

Author

Bacchi, Christian, Da Costa, Gérald, Cadel, Emmanuel, Cuvilly, Fabien, Houard, Jonathan, Vaudolon, Charly, Normand, Antoine, and Vurpillot, François

Subjects
Physics - Instrumentation and Detectors, Condensed Matter - Materials Science
Abstract

A position-energy-sensitive detector has been developed for APT instruments in order to deal with some mass peak overlap issues encountered in APT experiments. Through this new type of detector, quantitative and qualitative improvements could be considered for critical materials introducing mass peak overlaps, such as nitrogen and silicon in TiSiN systems, or titanium and carbon in cemented carbide materials. This new detector is based on a thin carbon foil positioned on the front panel of a conventional MCP-DLD detector. According to several studies, it has been demonstrated that the impact of ions on thin carbon foils has the effect of generating a number of transmitted and reflected secondary electrons that mainly depends on both the kinetic energy and the mass of incident particles. Despite the fact that this phenomenon is well known and has been widely discussed for decades, no studies have been performed to date for using it as a mean to discriminate particles energy. Therefore, this study introduces the first experiments on a potential new generation of APT detectors that would be able to resolve mass peak overlaps through the energy-sensitivity of thin carbon foils., Comment: 36 pages, 13 figures, 2 tables, conference paper

Published
2021
Full Text
View/download PDF

3. A Photonic Atom Probe coupling 3D Atomic Scale Analysis with in situ Photoluminescence Spectroscopy

Author

Houard, Jonathan, Normand, Antoine, Di Russo, Enrico, Bacchi, Christian, Dalapati, Pradip, Beainy, Georges, Moldovan, Simona, Da Costa, Gerald, Delaroche, Fabien, Vaudolon, Charly, Chauveau, Jean Michel, Hugues, Maxime, Blavette, Didier, Deconihout, Bernard, Vella, Angela, Vurpillot, François, and Rigutti, Lorenzo

Subjects
Physics - Applied Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Instrumentation and Detectors
Abstract

Laser enhanced field evaporation of surface atoms in Laser-assisted Atom Probe Tomography (La-APT) can simultaneously excite phtotoluminescence in semiconductor or insulating specimens. An atom probe equipped with appropriate focalization and collection optics has been coupled with an in-situ micro-Photoluminescence ({\mu}PL) bench that can be operated during APT analysis. The Photonic Atom Probe instrument we have developped operates at frequencies up to 500 kHz and is controlled by 150 fs laser pulses tunable in energy in a large spectral range (spanning from deep UV to near IR). Micro-PL spectroscopy is performed using a 320 mm focal length spectrometer equipped with a CCD camera for time-integrated and with a streak camera for time-resolved acquisitions. An exemple of application of this instrument on a multi-quantum well oxide heterostructure sample illustrates the potential of this new generation of tomographic atom probe., Comment: 22 pages, 4 figures. The following article has been accepted by the Review of Scientific Instruments. After it is published, it will be found at https://publishing.aip.org/resources/librarians/products/journals/

Published
2020
Full Text
View/download PDF

7. Introducing field evaporation energy loss spectroscopy

Author

ROUSSEAU, Loïc, primary, Normand, Antoine, additional, Morgado, Felipe F., additional, Soreide, Hanne S., additional, Stephenson, Leigh, additional, Hatzoglou, Constantinos, additional, Costa, Gérald Da, additional, Tehrani, Kambiz, additional, Freysoldt, Christoph, additional, Gault, Baptiste, additional, and Vurpillot, François, additional

Published
2022
Full Text
View/download PDF

8. Ion evaporation by single-cycle terahertz pulses

Author

Tang, Mincheng, primary, Houard, Jonathan, additional, Arnoldi, Laurent, additional, Boudant, Matthias, additional, Ayoub, Anas, additional, Normand, Antoine, additional, Da Costa, Gerald, additional, Hideur, Ammar, additional, and Vella, Angela, additional

Published
2021
Full Text
View/download PDF

9. Development of Wide Field of View Three-Dimensional Field Ion Microscopy and High-Fidelity Reconstruction Algorithms to the Study of Defects in Nuclear Materials

Author

Klaes, Benjamin, primary, Lardé, Rodrigue, additional, Delaroche, Fabien, additional, Hatzoglou, Constantinos, additional, Parvianien, Stefan, additional, Houard, Jonathan, additional, Da Costa, Gérald, additional, Normand, Antoine, additional, Brault, Martin, additional, Radiguet, Bertrand, additional, and Vurpillot, François, additional

Published
2021
Full Text
View/download PDF

10. High-resolution terahertz-driven atom probe tomography

Author

Vella, Angela, primary, Houard, Jonathan, additional, Arnoldi, Laurent, additional, Tang, Mincheng, additional, Boudant, Matthias, additional, Ayoub, Anas, additional, Normand, Antoine, additional, Da Costa, Gerald, additional, and Hideur, Ammar, additional

Published
2021
Full Text
View/download PDF

11. Design of A Multistage Marx Generator topology based on SiC-MOSFET Device for Atomic Probe Tomography Applications

Author

Kambiz, Tehrani, TEHRANI, KAMBIZ, LIU, Yunbi, Rousseau, Loic, Normand, Antoine, Vurpillot, Francois, École Supérieure d’Ingénieurs en Génie Électrique (ESIGELEC), Groupe de physique des matériaux (GPM), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU), IRSEEM POLE AUTOMATIQUE ET SYSTÈME, Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), and Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Pulse Generator, Topology (electrical circuits), 02 engineering and technology, 01 natural sciences, Marx generator, 010305 fluids & plasmas, Rectifier, [SPI]Engineering Sciences [physics], SiC-MOSFET Switch, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, PI controller, ComputingMilieux_MISCELLANEOUS, Physics, [PHYS]Physics [physics], business.industry, Pulse generator, 020208 electrical & electronic engineering, Electrical engineering, Modeling, High voltage, Atom Probe Tomogrpahy, [SPI.TRON]Engineering Sciences [physics]/Electronics, Integrator, Boost converter, business, Voltage
Abstract

International audience; This paper develops a design of high-voltage conversion chain using SiC-MOSFET devices. We have realized a power circuit model which is divided in three parts, a rectifier (AC/DC) then a DC/DC Boost based on SiC-Mosfet and finally a Multistage Marx Generator based on SiC-Mosfet. This structure is intended for high voltage (1.2 KV) and high frequency (100 KHz) applications. In this proposal, a Proportional Integrator Controller is used to control the output voltage of DC/DC Boost converter and to provide a stable voltage for Multistage Marx generator. The originality of this proposal lies in the use of the Multistage Marx generator based on SiC Mosfet devices in the atomic probe tomography applications. We have validated this power circuit model with simulation results on MATLAB and SABER Software.

Published
2020

12. Dynamic Effects in Voltage Pulsed Atom Probe

Author

Rousseau, Loïc, primary, Normand, Antoine, additional, Morgado, Felipe F., additional, Stephenson, Leigh, additional, Gault, Baptiste, additional, Tehrani, Kambiz, additional, and Vurpillot, François, additional

Published
2020
Full Text
View/download PDF

17. Correlative investigations by HAADF‐STEM and Atom Probe Tomography

Author

Lefebvre, Williams, primary, Moyon, Florian, additional, Normand, Antoine, additional, Rolland, Nicolas, additional, Blum, Ivan, additional, Etienne, Auriane, additional, Castro, Celia, additional, Cuvilly, Fabien, additional, Mancini, Lorenzo, additional, Mouton, Isabelle, additional, Rigutti, Lorenzo, additional, and Vurpillot, François, additional

Published
2016
Full Text
View/download PDF

18. In Situ Pulsed Hydrogen Implantation in Atom Probe Tomography.

Author

Maillet JB, Da Costa G, Klaes B, Bacchi C, Normand A, Vaudaulon C, and Vurpillot F

Abstract

The investigation of hydrogen in atom probe tomography appears as a relevant challenge due to its low mass, high diffusion coefficient, and presence as a residual gas in vacuum chambers, resulting in multiple complications for atom probe studies. Different solutions were proposed in the literature like ex situ charging coupled with cryotransfer or H charging at high temperature in a separate chamber. Nevertheless, these solutions often faced challenges due to the complex control of specimen temperature during hydrogen charging and subsequent analysis. In this paper, we propose an alternative route for in situ H charging in atom probe derived from a method developed in field ion microscopy. By applying negative voltage nanosecond pulse on the specimen in an atom probe chamber under a low pressure of H2, it is demonstrated that a high dose of H can be implanted in the range 2-20 nm beneath the specimen surface. An atom probe chamber was modified to enable direct negative pulse application with controlled gas pressure, pulse repetition rate, and pulse amplitude. Through electrodynamical simulations, we show that the implantation energy falls within the range 100-1,000 eV and a theoretical depth of implantation was predicted and compared to experiments., Competing Interests: Conflict of Interest. The authors declare that they have no competing interest., (© The Author(s) 2024. Published by Oxford University Press on behalf of the Microscopy Society of America. All rights reserved. For commercial re-use, please contact reprints@oup.com for reprints and translation rights for reprints. All other permissions can be obtained through our RightsLink service via the Permissions link on the article page on our site—for further information please contact journals.permissions@oup.com.)

Published
2024
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results