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Color center platforms have been at the forefront of quantum nanophotonics for applications in quantum networking, computing, and sensing. However, large-scale deployment of this technology has been stifled by a lack of ability to integrate photonic devices at scale while maintaining the properties of quantum emitters. We address this challenge in silicon carbide which has both commercially available wafer-scale substrates and is a host to color centers with desirable optical and spin properties. Using ion beam etching at an angle, we develop a 5-inch wafer process for the fabrication of triangular cross-section photonic devices in bulk 4H-SiC. The developed process has a variability in etch rate and etch angle of 5.4% and 2.9%, respectively. Furthermore, the integrated color centers maintain their optical properties after the etch, thus achieving the nanofabrication goal of wafer-scale nanofabrication in quantum-grade silicon carbide.

A leading application of quantum computers is the efficient simulation of large unitary quantum systems. Extending this advantage to the study of open Cavity Quantum Electrodynamics (CQED) systems could enable the use of quantum computers in the exploration and design of many-body quantum optical devices. Such devices have promising applications in optical quantum communication, simulation, and computing. In this work, we present an early exploration of the potential for quantum computers to efficiently investigate open CQED physics. Our simulations make use of a recent quantum algorithm that maps the dynamics of a singly excited open Tavis-Cummings model containing $N$ atoms coupled to a lossy cavity. We report the results of executing this algorithm on two noisy intermediate-scale quantum computers, a superconducting processor and a trapped ion processor, to simulate the population dynamics of an open CQED system featuring $N = 3$ atoms. By applying technology-specific transpilation and error mitigation techniques, we minimize the impact of gate errors, noise, and decoherence in each hardware platform, obtaining results which agree closely with the exact solution of the system. These results provide confidence that future simulation algorithms, combined with emerging large-scale quantum processors, can be a powerful tool for studying cavity quantum electrodynamics., Comment: 10 pages, 15 figures

The development of efficient quantum communication technologies depends on the innovation in multiple layers of its implementation, a challenge we address from the fundamental properties of the physical system at the nano-scale to the instrumentation level at the macro-scale. We select a promising near infrared quantum emitter, the nitrogen-vacancy (NV) center in 4H-SiC, and integrate it, at an ensemble level, with nanopillar structures that enhance photon collection efficiency into an objective lens. To characterize NV center properties at the unprecedented sub-2 Kelvin temperatures, we incorporate compatible superconducting nanowire single photon detectors inside the chamber of an optical cryostat and create the ICECAP, the Integrated Cryogenic system for Emission, Collection And Photon-detection. ICECAP measurements show no significant linewidth broadening of NV ensemble emission and up to 28-fold enhancement in collected emission. With additional filtering, we measure emitter lifetimes of NV centers in a basal ($hk$) and an axial ($kk$) orientation unveiling their cryogenic values of 2.21 ns and 2.86 ns.

Integrated photonics has been a promising platform for analog quantum simulation of condensed matter phenomena in strongly correlated systems. To that end, we explore the implementation of all-photonic quantum simulators in coupled cavity arrays with integrated ensembles of spectrally disordered emitters. Our model is reflective of color center ensembles integrated into photonic crystal cavity arrays. Using the Quantum Master Equation and the Effective Hamiltonian approaches, we study energy band formation and wavefunction properties in the open quantum Tavis-Cummings-Hubbard framework. We find conditions for polariton creation and (de)localization under experimentally relevant values of disorder in emitter frequencies, cavity resonance frequencies, and emitter-cavity coupling rates. To quantify these properties, we introduce two metrics, the polaritonic and nodal participation ratios, that characterize the light-matter hybridization and the node delocalization of the wavefunction, respectively. These new metrics combined with the Effective Hamiltonian approach prove to be a powerful toolbox for cavity quantum electrodynamical engineering of solid-state systems.

Over the last decade, conditions for perfect state transfer in quantum spin chains have been discovered, and their experimental realizations addressed. In this paper, we consider an extension of such studies to quantum state transfer in a coupled cavity array including the effects of atoms in the cavities which can absorb and emit photons as they propagate down the array. Our model is equivalent to previously examined spin chains in the one-excitation sector and in the absence of emitters. We introduce a Monte Carlo approach to the inverse eigenvalue problem which allows the determination of the inter-cavity and cavity-emitter couplings resulting in near-perfect quantum state transfer fidelity, and examine the time dependent polariton wave function through exact diagonalization of the resulting Tavis-Cummings-Hubbard Hamiltonian. The effect of inhomogeneous emitter locations is also evaluated., Comment: 12 pages, 11 figures

Color centers in wide band gap semiconductors are prominent candidates for solid-state quantum technologies due to their attractive properties including optical interfacing, long coherence times, spin-photon and spin-spin entanglement, as well as the potential for scalability. Silicon carbide color centers integrated into photonic devices span a wide range of applications in quantum information processing, in a material platform with quantum-grade wafer availability and advanced processing capabilities. Recent progress in emitter generation and characterization, nanofabrication, device design, and quantum optical studies have amplified the scientific interest in this platform. We provide a conceptual and quantitative analysis of the role of silicon carbide integrated photonics in three key application areas: quantum networking, simulation, and computing.

Silicon carbide is evolving as a prominent solid-state platform for the realization of quantum information processing hardware. Angle-etched nanodevices are emerging as a solution to photonic integration in bulk substrates where color centers are best defined. We model triangular cross-section waveguides and photonic crystal cavities using Finite-Difference Time-Domain and Finite-Difference Eigensolver approaches. We analyze optimal color center positioning within the modes of these devices and provide estimates on achievable Purcell enhancement in nanocavities with applications in quantum communications. Using open quantum system modeling, we explore emitter-cavity interactions of multiple non-identical color centers coupled to both a single cavity and a photonic crystal molecule in SiC. We observe polariton and subradiant state formation in the cavity-protected regime of cavity quantum electrodynamics applicable in quantum simulation.

Color centers are versatile systems that generate quantum light, sense magnetic fields and produce spin-photon entanglement. We review how these properties have pushed the limits of fundamental knowledge in a variety of scientific disciplines, from rejecting local-realistic theories to sensing superconducting phase transitions. In the light of recent progress in material processing and device fabrication, we identify new opportunities for interdisciplinary fundamental discoveries in physics and geochemistry.

We synthesized the liquid crystal dimer and trimer members of a series of flexible linear oligomers and characterized their microscopic and nanoscopic properties using resonant soft x-ray scattering and a number of other experimental techniques. On the microscopic scale, the twist-bend phases of the dimer and trimer appear essentially identical. However, while the liquid crystal dimer exhibits a temperature-dependent variation of its twist-bend helical pitch varying from 100 - 170 {\AA} on heating, the trimer exhibits an essentially temperature-independent pitch of 66 {\AA}, significantly shorter than those reported for other twist-bend forming materials in the literature. We attribute this to a specific combination of intrinsic conformational bend of the trimer molecules and a sterically favorable intercalation of the trimers over a commensurate fraction (two-thirds) of the molecular length. We develop a geometric model of the twist-bend phase for these materials with the molecules arranging into helical chain structures, and we fully determine their respective geometric parameters., Comment: supplemental information included