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The Land Capability for Agriculture (LCA) classification for Scotland has been used since the 1980’s to inform decision-making on land use management, planning and valuation. The risks and opportunities posed by climate change means we need to be able to understand how land capability may change in the future, and what this means in terms of developing adaptation responses, and policies that mitigate negative impacts and support opportunities. This report explores the potential for a new research tool to estimate land capability under future climatic conditions - the Land Capability of Scotland research platform. Based on the original LCA guidelines, the platform is a set of computing tools (not PC based) for data integration, calculation, analysis, mapping and visualisation allowing models to be run to estimate land capability constraints and generate digital maps. The Land Capability research platform is designed to be a ‘risk and opportunities assessment’ tool operated by researchers; the Land Capability of Scotland research platform does not replace the existing published LCA classifications. The platform has initially been developed to produce estimates of Land Capability for Agriculture (LCA) under different climate change projections and has further potential to support research on a broad range of land uses and benefits, such as forestry and ecosystem services.

The present disclosure relates to a method and a system for biomechanically characterising ocular tissue (C) through deformation of the ocular tissue. The method comprises: - generating an acoustic stimulus for delivery onto the ocular tissue in a collinear manner with an axis of a measuring device, for producing vibration of the ocular tissue; - measuring ocular tissue displacement with the measuring device at a plurality of locations of the ocular tissue; - obtaining at least a biomechanical parameter by processing the ocular tissue displacements at the plurality of locations. The disclosure also relates to a method and a system for screening biomechanical abnormality of ocular tissue (C)., National University of Ireland Galway, Consejo Superior de Investigaciones Científicas, University of Liverpool, A1 Solicitud de patente con informe sobre el estado de la técnica

Multi-layer patterning schemes involve the use of Silicon containing Anti-Reflective Coating (SiARC) films for their anti-reflective properties. Patterning transfer completion requires complete and selective removal of SiARC which is very difficult due to its high silicon content (>40%). Typically, SiARC removal is accomplished through a non-selective etch during the pattern transfer process using fluorine containing plasmas, or an ex-situ wet etch process using hydrofluoric acid is employed to remove the residual SiARC, post pattern transfer. Using a non-selective etch may result in profile distortion or wiggling, due to distortion of the underlying organic layer. The drawbacks of using wet etch process for SiARC removal are increased overall processing time and the need for additional equipment. Many applications may involve patterning of active structures in a poly-Si layer with an underlying oxide stopping layer. In such applications, SiARC removal selective to oxide using a wet process may prove futile. Removing SiARC selectively to SiO2 using a dry etch process is also challenging, due to similarity in the nature of chemical bonds (Si – O) in the two materials. In this work, we present highly selective etching of SiARC, in a plasma driven by a surface wave radial line slot antenna. The first step in the process involves an in-situ modification of the SiARC layer in O2 plasma followed by selective etching in a NF3/H2 plasma. Surface treatment in O2 plasma resulted in enhanced etching of the SiARC layer. For the right processing conditions, in-situ NF3/H2 dry etch process demonstrated selectivity values greater than 15:1 with respect to SiO2. The etching chemistry, however, was sensitive to NF3:H2 gas ratio. For dilute NF3 in H2, no SiARC etching was observed. Presumably, this is due to the deposition of ammonium fluorosilicate layer that occurs for dilute NF3/H2 plasmas. Additionally, challenges involved in selective SiARC removal (selective to SiO2, organic and Si layers) post pattern transfer, in a multi-layer structure will be discussed.