329 results on '"Niu Zhi-Chuan"'
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2. Direct observation of nanofabrication influence on the optical properties of single self-assembled InAs/GaAs quantum dots
3. Optical positioning of single quantum dots in micropillar with >65% extraction efficiency for on-demand quantum light sources
4. MBE growth of mid-wavelength infrared photodetectors based on high quality InAs/AlAs/InAsSb superlattice
5. Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory
6. High-Performance Anodic Vulcanization-Pretreated Gated P+–π–M–N+ InAs/GaSb Superlattice Long-Wavelength Infrared Detector
7. Experimental detection of polarization-frequency quantum correlations in a photonic quantum channel by local operations
8. Experimental test of the tradeoff relation in weak measurement
9. High Order Laterally-Coupled Distributed-Feedback GaSb-Based Diode Lasers at 1.9 μm Wavelength
10. High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers
11. Direct observation of excitonic polaron in InAs/GaAs quantum dots
12. Bias-selectable mid-/long-wave dual band infrared focal plane array based on Type-II InAs/GaSb superlattice
13. Tunable-correlation phenomenon of single photons emitted from a self-assembled quantum dot
14. On the origin of carrier localization in AlInAsSb digital alloy
15. High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices
16. Bright Single-Photon Source at 1.3 μm Based on InAs Bilayer Quantum Dot in Micropillar
17. Growth and characterization of type-II superlattice photodiodes with cutoff wavelength of 12 μm on 4-in. wafer
18. Development of a cryogen-free sub-3 K low-temperature scanning probe microscope by remote liquefaction scheme.
19. High-Temperature Continuous-Wave Operation of 1310 nm InAs/GaAs Quantum Dot Lasers
20. Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots
21. InAs/GaSb Superlattice-Based Photodiodes with pπMn Structure for Bias-Selectable Mid/Long Wave Dual-Color Infrared Response
22. Growth of high material quality InAs/GaSb type-II superlattice for long-wavelength infrared range by molecular beam epitaxy
23. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
24. Morphological engineering of self-assembled nanostructures at nanoscale on faceted GaAs nanowires by droplet epitaxy
25. Wet etching and passivation of GaSb-based very long wavelength infrared detectors
26. Dark Current Simulation and Analysis for InAs/GaSb Long wavelength Infrared Barrier Detectors
27. In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots
28. GaSb-based narrow ridge waveguide laser diode with single transverse mode operation
29. GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers*
30. Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy
31. Single transverse mode GaSb-based ridge waveguide lasers with low lateral beam divergence
32. Anomalous circular photogalvanic effect in p-GaAs
33. Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers*
34. Distributed Bragg reflector lasers emitting around 2.3μm
35. Polarization measurement of 2.1μm high power GaSb-based lasers
36. Exciton states of vertically stacked self-assembled InAs quantum disks in an axial magnetic field
37. Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots
38. Piezoelectric Tunnel FET With a Steep Slope
39. High-performance midwavelength infrared detectors based on InAsSb nBn design*
40. Investigation of active-region doping on InAs/GaSb long wave infrared detectors*
41. Self-Assembled GaAs Quantum Rings by MBE Droplet Epitaxy
42. Electronic structure of coupled vertically stacked self-assembled InAs quantum disks in a vertical electric field
43. Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering
44. Effect of growth temperature of GaAs x Sb 1– x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate
45. Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3- μ m quantum dot lasers*
46. Fabrication of GaSb-based distributed Bragg reflector semiconductor lasers
47. 1.2-um InAs/GaAs high-density quantum dot laser
48. High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy
49. High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector
50. High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy
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