331 results on '"Niu, Zhi-Chuan"'
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2. Direct observation of nanofabrication influence on the optical properties of single self-assembled InAs/GaAs quantum dots
3. Dark current simulation and analysis for InAs/GaSb long wavelength infrared barrier detectors
4. Optical positioning of single quantum dots in micropillar with >65% extraction efficiency for on-demand quantum light sources
5. MBE growth of mid-wavelength infrared photodetectors based on high quality InAs/AlAs/InAsSb superlattice
6. Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory
7. Experimental detection of polarization-frequency quantum correlations in a photonic quantum channel by local operations
8. Experimental test of the tradeoff relation in weak measurement
9. High-Performance Anodic Vulcanization-Pretreated Gated P+–π–M–N+ InAs/GaSb Superlattice Long-Wavelength Infrared Detector
10. Direct observation of excitonic polaron in InAs/GaAs quantum dots
11. High Order Laterally-Coupled Distributed-Feedback GaSb-Based Diode Lasers at 1.9 μm Wavelength
12. High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers
13. Bias-selectable mid-/long-wave dual band infrared focal plane array based on Type-II InAs/GaSb superlattice
14. Tunable-correlation phenomenon of single photons emitted from a self-assembled quantum dot
15. Growth and characterization of type-II superlattice photodiodes with cutoff wavelength of 12 μm on 4-in. wafer
16. On the origin of carrier localization in AlInAsSb digital alloy
17. High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices
18. Bright Single-Photon Source at 1.3 μm Based on InAs Bilayer Quantum Dot in Micropillar
19. High-Temperature Continuous-Wave Operation of 1310 nm InAs/GaAs Quantum Dot Lasers
20. Development of a cryogen-free sub-3 K low-temperature scanning probe microscope by remote liquefaction scheme.
21. Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots
22. InAs/GaSb Superlattice-Based Photodiodes with pπMn Structure for Bias-Selectable Mid/Long Wave Dual-Color Infrared Response
23. Growth of high material quality InAs/GaSb type-II superlattice for long-wavelength infrared range by molecular beam epitaxy
24. Morphological engineering of self-assembled nanostructures at nanoscale on faceted GaAs nanowires by droplet epitaxy
25. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
26. Wet etching and passivation of GaSb-based very long wavelength infrared detectors
27. Dark Current Simulation and Analysis for InAs/GaSb Long wavelength Infrared Barrier Detectors
28. In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots
29. GaSb-based narrow ridge waveguide laser diode with single transverse mode operation
30. GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers*
31. Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy
32. Anomalous circular photogalvanic effect in p-GaAs
33. Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers*
34. Single transverse mode GaSb-based ridge waveguide lasers with low lateral beam divergence
35. Exciton states of vertically stacked self-assembled InAs quantum disks in an axial magnetic field
36. Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots
37. Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy
38. Distributed Bragg reflector lasers emitting around 2.3μm
39. Polarization measurement of 2.1μm high power GaSb-based lasers
40. Piezoelectric Tunnel FET With a Steep Slope
41. High-performance midwavelength infrared detectors based on InAsSb nBn design*
42. Investigation of active-region doping on InAs/GaSb long wave infrared detectors*
43. Self-Assembled GaAs Quantum Rings by MBE Droplet Epitaxy
44. Electronic structure of coupled vertically stacked self-assembled InAs quantum disks in a vertical electric field
45. Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering
46. Effect of growth temperature of GaAs x Sb 1– x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate
47. Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3- μ m quantum dot lasers*
48. Fabrication of GaSb-based distributed Bragg reflector semiconductor lasers
49. 1.2-um InAs/GaAs high-density quantum dot laser
50. High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy
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