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201 results on '"Nishitani, M."'

13. Homojunction diode of CuInSe2 thin film fabricated by nitrogen implantation

Author

Nishitani, M., Negami, T., Kohiki, S., Terauchi, M., Wada, T., and Hirao, T.

Subjects
Thin films -- Research, Ion implantation -- Analysis, Raman spectroscopy -- Usage, Physics
Abstract

Polycrystalline CuInSe2 thin film is fabricated by correcting homojunction. Ion implementation of nitrogen, with the energy and the dose of 50keV and 1 times 10 to the power 15 cm to the power -2, followed by the short annealing in nitrogen atmosphere at 450 degrees centigrade results in the p-n junction diode. The Raman scattering spectroscopy in used to study the properties of the near surface region in the films implanted. The junction properties have been characterized by measuring the secondary ion mass spectroscopy depth profile of the nitrogen in the CuInSe2 film and the capacitive voltage characteristics of the rectifying diode. Efficiency of 0. 35% is seen in the photovoltaic characteristics in AM 1.0, 100 mW/cm square.

Published
1993

14. In situ measurement of surface potential developed on MgO thin film surface under ion irradiation using ion scattering spectroscopy.

Author

Nagatomi, T., Kuwayama, T., Yoshino, K., Takai, Y., Morita, Y., Nishitani, M., and Kitagawa, M.

Subjects
PHYSICS research, THIN films, SCATTERING (Physics), COLLISIONS (Nuclear physics), SPECTRUM analysis, IRRADIATION, IONS
Abstract

The application of ion scattering spectroscopy (ISS) to the in situ measurement of the surface potential developed on an insulator surface under positive ion irradiation was investigated. The ISS spectra measured for a MgO film of 600 nm thickness on a Si substrate by the irradiation of 950 eV He+ ions revealed that the surface is positively charged by approximately 180 V. For accurate measurement of the surface potential, a correction to take into account the angular deflection of primary ions induced by the high surface potential is required. The dependence of the surface potential on the sample temperature revealed that no charging is induced above 700 °C, indicating that accumulated charges can be removed by heating to 700 °C. From the measurement of the ion-induced secondary electron yield using a collector electrode located in front of the sample surface, the surface potential and ion-induced secondary electron yield were found to be strongly affected by the experimental setup. Secondary electrons produced by the impact of slow positive secondary ions, the maximum energy of which corresponds to the surface potential, play an important role when the bias voltage applied to the collector electrode is positively high for the present experimental setup. The surface potential developed on the surface of MgO films of 600 and 200 nm thickness was measured in situ, revealing that the amount of accumulated charges and the time required to attain the steady state of charging are slightly dependent on the beam current of primary ions and strongly dependent on the thickness of the MgO film. The present results confirmed that the application of ISS has high potential for investigating charging phenomena and the secondary electron emission from insulator surfaces under positive ion irradiation. [ABSTRACT FROM AUTHOR]

Published
2009
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15. Homojunction Diode of Cuinse2 Thin-Film Fabricated by Nitrogen Implantation

Author

Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Moriguchi, Osaka 570, Japan, Nishitani, M, Negami, T, Kohiki, S, Terauchi, M, Wada, T, Hirao, T, Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Moriguchi, Osaka 570, Japan, Nishitani, M, Negami, T, Kohiki, S, Terauchi, M, Wada, T, and Hirao, T

Abstract

type:Journal Article, Rectifying homojunction have been fabricated in polycrystalline CuInSe2 thin film. The p-n junction diode was obtained by short annealing in nitrogen atmosphere at 450-degrees-C following the ion implantation of nitrogen with the energy and the dose of 50 keV and 1 x 10(15) cm-2, respectively. The properties of the near surface region in the films implanted have been studied by the Raman scattering spectroscopy. The secondary ion mass spectroscopy depth profile of the nitrogens in the CuInSe2 film and the capacitive-voltage characteristics of the rectifying diode have been measured to characterize the junction properties. The photovoltaic characteristics in AM 1.0, 100 mW/cm2 are shown with the efficiency of 0.35%., source:http://www.aip.org, source:https://doi.org/10.1063/1.355296

Published
2017

16. Cuinse2 Homojunction Diode Fabricated by Phosphorus OP9

Author

Matsushita Elect Ind Co Ltd, Cent Res Labs, Kohiki, S, Nishitani, M, Negami, T, Wada, T, Matsushita Elect Ind Co Ltd, Cent Res Labs, Kohiki, S, Nishitani, M, Negami, T, and Wada, T

Abstract

type:Journal Article, Homojunction diodes were fabricated by doping of phosphorus to n-type Cu-In-Se thin films. The junction prepared by P implantation at the energy of 50 keV with the dose of 1 x 10(15) ions/cm 2 showed a rectification ratio of more than 100. Conduction in Cu-In-Se thin films, whose crystal structure is of the chalcopyrite type, changes from n- to p-type in such a way that group V elements (N, P, Sb, or Bi) substitute for Se in the film., source:http://www.aip.org, source:https://doi.org/10.1063/1.108617

Published
2017

17. Enhanced Conductivity of Zinc-oxide thin-films by Ion-Implantation of Hydrogen-atoms

Author

Matsushita Elect Ind Co Ltd, Cent Res Labs, Kohiki, S, Nishitani, M, Wada, T, Hirao, T, Matsushita Elect Ind Co Ltd, Cent Res Labs, Kohiki, S, Nishitani, M, Wada, T, and Hirao, T

Abstract

type:Journal Article, Enhancement of the conductivity of zinc oxide through doping with hydrogen atoms was examined by using ion implantation of highly resistive thin films deposited by rf magnetron sputtering at room temperature. With a doping of 1 X 10(17) atoms cm-2, the conductivity after annealing at 200-degrees-C in an N2 atmosphere at 1 atm rose from the initial 1 X 10(-7) OMEGA-1 cm-1 to 5.5 X 10(2) OMEGA-1 cm-1., source:http://www.aip.org, source:https://doi.org/10.1063/1.111401

Published
2017

33. Cuinse2 Homojunction Diode Fabricated by Phosphorus OP9

Author

Kohiki, S, Nishitani, M, Negami, T, and Wada, T

Subjects
phosphorus additions, p&minus, crystal doping, indium selenides, copper selenides, ion implantation, ternay compouds, n junctions, iv characteristic
Abstract

Homojunction diodes were fabricated by doping of phosphorus to n-type Cu-In-Se thin films. The junction prepared by P implantation at the energy of 50 keV with the dose of 1 x 10(15) ions/cm 2 showed a rectification ratio of more than 100. Conduction in Cu-In-Se thin films, whose crystal structure is of the chalcopyrite type, changes from n- to p-type in such a way that group V elements (N, P, Sb, or Bi) substitute for Se in the film.

Published
1993

43. CD4<SUP>+</SUP> V<SUB>α</SUB>14 NKT cells play a crucial role in an early stage of protective immunity against infection with Leishmania major

Author

Ishikawa, H., Hisaeda, H., Taniguchi2, M., Nakayama, T., Sakai, T., Maekawa, Y., Nakano, Y., Zhang, M., Zhang, T., Nishitani, M., Takashima, M., and Himeno, K.

Abstract

The roles of γδ T, NK and NKT cells in an early stage of protective immunity against infection with Leishmania major were investigated. Further, the contribution of these innate cells to the expression of 65 kDa heat shock protein (HSP65) in host macrophages was examined, since we found previously that this expression prevents apoptotic death of infected macrophages and is a crucial step in the acquisition of protective immunity against infection with various obligate intracellular protozoa including L. major. C57BL/6 and DBA/2 mice were found to be resistant against the infection on the basis of the parasite burden in their regional lymph nodes, and to strongly express HSP65 in their macrophages, whereas BALB/c mice were susceptible and barely expressed the HSP65. In those resistant mice, CD4+ NKT cells prominently increased in their regional lymph node and were the main effector cells at least for an early stage of the protective immunity and for the HSP65 expression, whereas this subset did not increase in susceptible BALB/c mice. Further, neither γδ T nor NK cells in resistant mice contributed to those protective immune responses. The NKT cell subset bore CD3, CD4, TCR αβ, IL-2Rβ and NK1.1 but scarcely asialo-GM1. Moreover, this effector subset was confirmed to be Vα14 NKT cells by using Jα281-/- mice.

Published
2000

46. Composition monitoring method in CuInSe2thin film preparation

Author

Nishitani, M., Negami, T., and Wada, T.

Abstract

The real-time monitoring method of the Cu/In ratio in the bilayer deposition process of CuInSe2thin film was originally established and demonstrated by applying the bilayer process. The principles of this method were based on the idea that the hole concentration of the film was abruptly changed at the stoichiometric composition while the film composition gradually changed from Cu rich to In rich through the stoichiometric composition during the deposition process. This method was very useful for the composition control of the CuInSe2film.

Published
1995
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