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1. Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage

2. Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing.

3. Bulk Photovoltaic Effect in Single Ferroelectric Domain of SnS Crystal and Control of Local Polarization by Strain.

7. Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators

8. The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity

9. Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene FET

10. Mobility variations in mono- and multi-layer graphene films

17. Shift Current Photovoltaics based on A Noncentrosymmetric Phase in in‐plane Ferroelectric SnS

18. Single-Gate MoS2Tunnel FET with a Thickness-Modulated Homojunction

25. Reaction of GeO2 with Ge and crystallization of GeO2 on Ge.

32. p-Type Conversion of WS2and WSe2by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors

41. Thermodynamic control of ferroelectric-phase formation in HfxZr1−xO2 and ZrO2.

42. Thermodynamic control of ferroelectric-phase formation in HfxZr1−xO2 and ZrO2.

45. Fermi-Level Pinning Engineering for Achieving High-Performance Ge-Based Resistive Memory With Ultrahigh Self-Rectifying Ratio (> 105)

48. Atomic-Step-Induced Screw-Dislocation-Driven Spiral Growth of SnS

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