Author: "Nikolay Cherkashin" - Searchworks@Jio Institute Digital Library Search Results

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157 results on '"Nikolay Cherkashin"'

1. Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs

Author: Daniele Barettin, Alexei V. Sakharov, Andrey F. Tsatsulnikov, Andrey E. Nikolaev, Alessandro Pecchia, Matthias Auf der Maur, Sergey Yu. Karpov, and Nikolay Cherkashin
Subjects: quantum dots, \({\vec{k} \cdot \vec{p}}\), empirical tight-binding, modeling, Chemistry, QD1-999
Abstract: A possible solution for the realization of high-efficiency visible light-emitting diodes (LEDs) exploits InGaN-quantum-dot-based active regions. However, the role of local composition fluctuations inside the quantum dots and their effect of the device characteristics have not yet been examined in sufficient detail. Here, we present numerical simulations of a quantum-dot structure restored from an experimental high-resolution transmission electron microscopy image. A single InGaN island with the size of ten nanometers and nonuniform indium content distribution is analyzed. A number of two- and three-dimensional models of the quantum dot are derived from the experimental image by a special numerical algorithm, which enables electromechanical, continuum k→·p→, and empirical tight-binding calculations, including emission spectra prediction. Effectiveness of continuous and atomistic approaches are compared, and the impact of InGaN composition fluctuations on the ground-state electron and hole wave functions and quantum dot emission spectrum is analyzed in detail. Finally, comparison of the predicted spectrum with the experimental one is performed to assess the applicability of various simulation approaches.
Published: 2023
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2. Electromechanically Coupled III-N Quantum Dots

Author: Daniele Barettin, Alexei V. Sakharov, Andrey F. Tsatsulnikov, Andrey E. Nikolaev, and Nikolay Cherkashin
Subjects: quantum dots, electromechanical fields, modeling, epitaxial layer growth, Chemistry, QD1-999
Abstract: We exploit the three-dimensional (3D) character of the strain field created around InGaN islands formed within the multilayer structures spaced by a less than 1-nm-thick GaN layer for the creation of spatially correlated electronically coupled quantum dots (QDs). The laterally inhomogeneous vertical out-diffusion of In atoms during growth interruption is the basic mechanism for the formation of InGaN islands within as-deposited 2D layers. An anisotropic 3D strain field created in the first layer is sufficient to justify the vertical correlation of the islands formed in the upper layers spaced by a sufficiently thin GaN layer. When the thickness of a GaN spacer exceeds 1 nm, QDs from different layers under the same growth conditions emit independently and in the same wavelength range. When extremely thin (less than 1 nm), a GaN spacer is formed solely by applying short GI, and a double wavelength emission in the blue and green spectral ranges evidences the electromechanical coupling. With k→·p→ calculations including electromechanical fields, we model the optoelectronic properties of a structure with three InGaN lens-shaped QDs embedded in a GaN matrix, with three different configurations of In content. The profiles of the band structures are strongly dependent on the In content arrangement, and the quantum-confined Stark effect is significantly reduced in a structure with an increasing gradient of In content from the top to the bottom QD. This configuration exhibits carrier tunneling through the QDs, an increase of wave functions overlap, and evidence emerges of three distinct peaks in the spectral range.
Published: 2023
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3. Experimentally-Verified Modeling of InGaAs Quantum Dots

Author: Alexander N. Kosarev, Vladimir V. Chaldyshev, and Nikolay Cherkashin
Subjects: quantum dot, InGaAs, modeling, localized states, strain-stress field, Chemistry, QD1-999
Abstract: We develop a model of an epitaxial self-organized InGaAs quantum dot buried in GaAs, which takes into account experimentally determined indium distribution inside the QD, its geometry and crystallography. The problem of solid mechanics was solved to determine the stress-strain field. Then, the parameters of the electron and hole ground states were evaluated by solving the problem of the quantum mechanics on the same mesh. The results of calculations appeared to be reasonably well consistent with experimentally recorded optical emission spectra for the QDs in the same sample. The experimentally-verified modeling reveals a bagel-like shape of the hole wave function at the ground state, which should considerably impact the optical and magnetic properties of the QDs. Such shape of the wave function is beyond the predictions of simplified models with uniform indium distribution.
Published: 2022
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4. Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5

Author: Minh Anh Luong, Nikolay Cherkashin, Béatrice Pecassou, Chiara Sabbione, Frédéric Mazen, and Alain Claverie
Subjects: phase change materials, Ge2Sb2Te5, nitrogen, crystallization, strain, kinetics, Chemistry, QD1-999
Abstract: Among the phase change materials, Ge2Sb2Te5 (GST-225) is the most studied and is already integrated into many devices. N doping is known to significantly improve some key characteristics such as the thermal stability of materials and the resistance drift of devices. However, the origin, at the atomic scale, of these alterations is rather elusive. The most important issue is to understand how N doping affects the crystallization characteristics, mechanisms and kinetics, of GST-225. Here, we report the results of a combination of in situ and ex situ transmission electron microscopy (TEM) investigations carried out on specifically designed samples to evidence the influence of N concentration on the crystallization kinetics and resulting morphology of the alloy. Beyond the known shift of the crystallization temperature and the observation of smaller grains, we show that N renders the crystallization process more “nucleation dominated” and ascribe this characteristic to the increased viscosity of the amorphous state. This increased viscosity is linked to the mechanical rigidity and the reduced diffusivity resulting from the formation of Ge–N bonds in the amorphous phase. During thermal annealing, N hampers the coalescence of the crystalline grains and the cubic to hexagonal transition. Making use of AbStrain, a recently invented TEM-based technique, we evidence that the nanocrystals formed from the crystallization of N-doped amorphous GST-225 are under tension, which suggests that N is inserted in the lattice and explains why it is not found at grain boundaries. Globally, all these results demonstrate that the origin of the effect of N on the crystallization of GST-225 is not attributed to the formation of a secondary phase such as a nitride, but to the ability of N to bind to Ge in the amorphous and crystalline phases and to unbind and rebind with Ge along the diffusion path of this atomic species during annealing.
Published: 2021
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5. Sb-rich nanoinclusions in an AlGaAsSb metamaterial

Author: B. R. Semyagin, Nikolay Cherkashin, V. V. Preobrazhenskii, Michael A. Putyato, M. A. Yagovkina, N.A. Bert, V.N. Nevedomskiy, Vitaliy I. Ushanov, Vladimir Chaldyshev, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Diffraction, Materials science, Thermodynamic equilibrium, Annealing (metallurgy), Mechanical Engineering, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, Microstructure, 01 natural sciences, 0104 chemical sciences, Matrix (chemical analysis), Antimony, chemistry, Mechanics of Materials, Transmission electron microscopy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Materials Science, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract: We studied the microstructure of Al0.28Ga0.72As0.972Sb0.028 metamaterials containing a developed array of AsSb nanoinclusions. The AlGaAsSb films were grown by low-temperature molecular-beam epitaxy followed by high-temperature annealing at 750°C. The process resulted in an array of self-organized AsSb nanonclusions with an average diameter of 15 nm. The volume filling factor was about 0.003. Using transmission electron microscopy and x-ray diffraction we showed that the nanoinclusions have A7-type rhombohedral atomic structure with the following orientation in the matrix (0003)p {111}m and [-2110]p 〈220〉m, where p and m indices indicate the AsSb precipitate and AlGaAsSb matrix, correspondingly. The nanoinclusions appeared to be strongly enriched by antimony (more than 90 atomic %), whereas the Sb content in the AlGaAsSb matrix was 2.8 atomic %. The strong enrichment of the inclusion with Sb resulted from the local thermodynamic equilibrium between the solid AlGaAsSb matrix and AsSb inclusions which became liquid at a formation temperature of 750°C.
Published: 2019

6. Reconstruction of depth resolved strain tensor in off-axis single crystals: Application to H + ions implanted LiTaO 3

Author: Sylvie Schamm-Chardon, Nikolay Cherkashin, Oleg Kononchuk, Antonin Louiset, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Fabrication, Materials science, Physics and Astronomy (miscellaneous), Strain (chemistry), Coordinate system, Infinitesimal strain theory, Context (language use), 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Molecular physics, Piezoelectricity, Lattice (module), Strain engineering, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology
Abstract: International audience; In the context of growing interest in strain engineering, we present a theoretical protocol for the reconstruction of extrinsic and intrinsic strain tensors in single-crystals attached to a template, with an arbitrary oriented coordinate system. Input data for the protocol are extrinsic deformations of lattice planes, i.e., measured with reference to a template. By combining the protocol with elasticity theory, material property modification can be elucidated. Different methods for strain measurements can take advantage of this approach. It has been applied for reconstruction of strain tensor depth distribution in off-axis LiTaO3 crystals implanted with H+ ions, which is the key step for piezoelectric thin film-on-insulator fabrication by the Smart Cut process. Modifications of composition, lattice parameters, and elastic constants are indicated and discussed
Published: 2021

7. Quantum-dot oxide-confined 850-nm VCSELs with extreme temperature stability operating at 25 Gbit/s up to 180deg C

Author: V. A. Shchukin, J.-R. Kropp, Vladimir Kalosha, N. N. Ledentsov, Lukasz Chorchos, Nikolay Cherkashin, J. P. Turkiewicz, O. Makarov, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)
Subjects: 010302 applied physics, Range (particle radiation), Materials science, business.industry, Oxide, Laser, 7. Clean energy, 01 natural sciences, Extreme temperature, Stability (probability), Vertical-cavity surface-emitting laser, law.invention, 010309 optics, chemistry.chemical_compound, chemistry, Quantum dot, Gigabit, law, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract: New applications in sensing, automotive and on-board applications require vertical-cavity surface-emitting lasers (VCSELs) operating at high data rates up to very high ambient temperatures. We study temperature stability of the 850 nm Quantum-Dot (QD) VCSELs and benchmark them to Quantum-Well (QW) VCSELs of similar design. QD VCSELs enable extension of the temperature stability and demonstrate threshold currents below 1 mA for operation range from 30°C to 200°C. The role of gain to cavity detuning is discussed in details. 25 Gbit/s NRZ multi-mode fiber transmission with QD VCSELs is realized at temperatures up to 180°C. Pulsed operation of QD VCSELs with 8 μm oxide aperture diameter is studied at temperatures from 30°C to 125°C and 1 W peak power is realized on 100 ns pulses at room temperature.
Published: 2020

8. InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)

Author: Mikhail V. Maximov, N. Yu. Gordeev, A. S. Payusov, Thibaud Denneulin, V. A. Shchukin, Alexey E. Zhukov, Yu. M. Shernyakov, Nikolay Cherkashin, Alexey M. Nadtochiy, M. M. Kulagina, N. N. Ledentsov, Solar-Terrestrial Centre of Excellence [Brussels] (STCE), Ernst Ruska-Zentrum für Mikroskopie und Spektroskopie mit Elektronen (ER-C), Forschungszentrum Jülich GmbH | Centre de recherche de Juliers, Helmholtz-Gemeinschaft = Helmholtz Association-Helmholtz-Gemeinschaft = Helmholtz Association, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Ernst Ruska Center for Microscopy and Spectroscopy with Electrons, Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)
Subjects: Materials science, Physics::Optics, 02 engineering and technology, Epitaxy, 7. Clean energy, 01 natural sciences, law.invention, Semiconductor laser theory, law, 0103 physical sciences, Metalorganic vapour phase epitaxy, ComputingMilieux_MISCELLANEOUS, Diode, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Laser, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Quantum dot, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Current density, Lasing threshold
Abstract: Lasing in the orange spectral range (599–605 nm) is demonstrated for (AlxGa1 –x)0.5In0.5P–GaAs laser diodes grown by metalorganic vapor-phase epitaxy (MOVPE) on GaAs (211)A and (322)A substrates. The active region consists of four layers of InxGa1 –xP vertically coupled quantum dots. The leakage of nonequilibrium electrons from the active region is suppressed by barriers consisting of four quantum-confinement layers of the InGaAlP solid solution with a high Ga content. The maximal optical output power in the pulsed regime is 800 mW and is limited by the catastrophic optical degradation of mirrors. The lasers fabricated from structures grown on (322)A substrates have a lower threshold current density, higher differential quantum efficiency, and smaller internal losses when compared with lasers fabricated from structures grown on (211)A substrates, which is explained by the higher barrier for nonequilibrium electrons in the first case.
Published: 2019

9. Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes

Author: G. Da Costa, Nikolay Cherkashin, Didier Blavette, A. V. Sakharov, Bastien Bonef, E. Di Russo, Andrey E. Nikolaev, A. F. Tsatsulnikov, Jonathan Houard, L. Rigutti, Ivan Blum, M. Korytov, Groupe de physique des matériaux (GPM), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Materials Department [Santa Barbara], University of California [Santa Barbara] (UCSB), University of California-University of California, Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), University of California [Santa Barbara] (UC Santa Barbara), and University of California (UC)-University of California (UC)
Subjects: Materials science, Superlattices, Scanning electron microscope, General Physics and Astronomy, 02 engineering and technology, Atom probe, 01 natural sciences, Molecular physics, Electron holography, Ion, law.invention, law, 0103 physical sciences, Heterostructures, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010302 applied physics, Mass spectrometry, Dark field electron holography, Heterojunction, 021001 nanoscience & nanotechnology, Laser, Evaporation (deposition), Light emitting diodes, Quantum wells, Transmission electron microscopy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology, Scanning electron microscopy, Epitaxy
Abstract: International audience; Laser-assisted atom probe tomography (APT) and high-resolution dark-field electron holography (HR-DFEH) were performed to investigate the composition of a polar [0001] GaN/AlxGa1 − xN/InyGa1 − yN light emitting diode. In particular, the III-site fraction of both AlxGa1 − xN and InyGa1 − yN alloys was studied adopting a comparative approach. HR-DFEH allows mapping the projected strain with a subnanometer spatial resolution which is used for the calculation of the two-dimensional alloy composition distribution. APT provides three-dimensional alloys composition distribution with a nanometer spatial resolution. However, here we reveal that important inaccuracies affect local composition measurements. A Ga-poor composition is obtained in high DC-electric field regions. Moreover, such inaccuracies may be locally enhanced where the [0001] pole intersects the surface of the analyzed specimen, leading to a lower fraction of Ga measured. III-site fractions closer to the nominal values were measured at low field conditions. Ga loss is thought to be due to preferential DC field induced evaporation of Ga ions between laser pulses. This is explained in terms of formation of a metallic layer on the tip surface during APT analysis, where weak Ga-Ga bonds are formed, promoting the loss of Ga at high field conditions.
Published: 2019

10. Room temperature yellow InGaAlP quantum dot laser

Author: Thibaud Denneulin, L. Ya. Karachinsky, Yu. M. Shernyakov, Nikolay Cherkashin, M. M. Kulagina, V. A. Shchukin, A. S. Payusov, Alexey E. Zhukov, M. V. Maximov, N. Yu. Gordeev, N. N. Ledentsov, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)
Subjects: Materials science, Active laser medium, Superlattice, 02 engineering and technology, 01 natural sciences, law.invention, law, 0103 physical sciences, Materials Chemistry, Stimulated emission, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, Diode, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Laser, Electronic, Optical and Magnetic Materials, Quantum dot, Quantum dot laser, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Lasing threshold
Abstract: We report simulation of the conduction band alignment in tensile–strained GaP–enriched barrier structures and experimental results on injection lasing in the green–orange spectral range (558–605 nm) in (AlxGa1–x)0.5In0.5P–GaAs diodes containing such barriers. The wafers were grown by metal–organic vapor phase epitaxy side–by–side on (8 1 1)A, (2 1 1)A and (3 2 2)A GaAs substrates, which surface orientations were strongly tilted towards the [1 1 1]A direction with respect to the (1 0 0) plane. Four sheets of GaP–rich quantum barrier insertions were applied to suppress the leakage of non–equilibrium electrons from the gain medium. Two types of the gain medium were applied. In one case 4–fold stacked tensile–strained (In,Ga)P insertions were used. Experimental data shows that self–organized vertically–correlated quantum dots (QDs) are formed on (2 1 1)A– and (3 2 2)A–oriented substrates, while corrugated quantum wires are formed on the (8 1 1)A surface. In the other case a short–period superlattice (SPSL) composed of 16–fold stacked quasi–lattice–matched 1.4 nm–thick In0.5Ga0.5P layers separated by 4 nm–thick (Al0.6Ga0.4)0.5In0.5P layers was applied. Laser diodes with 4–fold stacked QDs having a threshold current densities of ∼7–10 kA/cm2 at room temperature were realized for both (2 1 1)A and (3 2 2)A surface orientations at cavity lengths of ∼1 mm. Emission wavelength at room temperature was ∼599–603 nm. Threshold current density for the stimulated emission was as low as ∼1 kA/cm2. For (8 1 1)A–grown structures no room temperature lasing was observed. SPSL structures demonstrated lasing only at low temperatures
Published: 2019

11. Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C

Author: J.-R. Kropp, Jin-Wei Shi, M. Agustin, N. N. Ledentsov, V. A. Shchukin, Zuhaib Khan, Nikolay Cherkashin, Łukasz Chorchos, Chen-Lung Cheng, Jaroslaw P. Turkiewicz, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)
Subjects: Materials science, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Stability (probability), Electronic, Optical and Magnetic Materials, Bit (horse), 020210 optoelectronics & photonics, Quantum dot, Gigabit, 0202 electrical engineering, electronic engineering, information engineering, Materials Chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2019

12. Metallic AsSb nanoinclusions strongly enriched by Sb in AlGaAsSb metamaterial

Author: V.N. Nevedomskiy, Michael A. Putyato, M. A. Yagovkina, N.A. Bert, Vladimir Chaldyshev, V. V. Preobrazhenskii, B. R. Semyagin, Nikolay Cherkashin, Vitaliy I. Ushanov, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institute of Semiconductor Physics (ISPSORAN), Siberian Branch of the Russian Academy of Sciences (SB RAS), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Materials science, Annealing (metallurgy), Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, Thermal treatment, 021001 nanoscience & nanotechnology, Microstructure, Epitaxy, 01 natural sciences, Lattice constant, Antimony, chemistry, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Dislocation, 0210 nano-technology, Burgers vector
Abstract: International audience; We have elucidated the microstructure of Al0.28Ga0.72As0.972Sb0.028 metamaterial containing a developed array of AsSb nanoinclusions. The AlGaAsSb films were grown by low-temperature molecular-beam epitaxy followed by high-temperature postgrowth thermal treatment. The process resulted in an array of self-organized AsSb nanoinclusions with an average diameter of 15 nm (after annealing at 750 °C), which occupied about 0.003 of the volume of the crystalline AlGaAsSb matrix. The nanoinclusions were found to have an A7-type rhombohedral microstructure and contained a very high concentration of antimony that exceeded 90%, whereas the Sb content in the AlGaAsSb matrix was 2.8 at. %. The strong enrichment of the inclusion with Sb resulted from the local thermodynamic equilibrium between the solid AlGaAsSb matrix and the As0.1Sb0.9 inclusions that became liquid at an annealing temperature of 750 °C. The inclusion-matrix orientation relationship was established to be (003)p || {111}m and [2¯110]p || 〈220〉m, similar to that for pure As precipitates in low-temperature grown GaAs despite a rather large difference in particle lattice constants and the c/a ratio. The increased inclusion-matrix lattice mismatch resulted in the generation of (001) prismatic dislocation loops associated with the inclusions bigger than 8.5 nm in diameter. The Burgers vector of the dislocation was determined as b = amatrix[001]. The established microstructural and compositional features create an opportunity to specify plasmonic resonance conditions in the low-temperature grown AlGaAsSb metamaterial.
Published: 2019

13. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

Author: Nikolay Cherkashin, V. N. V’yuginov, W. V. Lundin, Ya. M. Parnes, V. V. Volkov, V. M. Ustinov, V. E. Zemlyakov, V. G. Tikhomirov, A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin, M. N. Mizerov, Saint Petersburg Electrotechnical University 'LETI', A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Electron mobility, Materials science, Computer simulation, business.industry, Transistor, Heterojunction, 02 engineering and technology, Semiconductor device, High-electron-mobility transistor, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electromagnetic radiation, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, Condensed Matter::Materials Science, law, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Microwave
Abstract: cited By 9; International audience; The numerical simulation, and theoretical and experimental optimization of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses and compositions of the heterostructure layers, allowing high microwave power implementation, are in relatively narrow ranges. It is shown that numerical simulation can be efficiently applied to the development of microwave HEMTs, taking into account basic physical phenomena and features of actual device structures.
Published: 2016

14. A bottom-up approach for controlled deformation of carbon nanotubes through blistering of supporting substrate surface

Author: Vladimir Prudkovskiy, Fabrice Iacovella, Mikhail M. Maslov, Konstantin P. Katin, Nikolay Cherkashin, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)
Subjects: Materials science, Annealing (metallurgy), Bioengineering, 02 engineering and technology, Carbon nanotube, Deformation (meteorology), 01 natural sciences, law.invention, symbols.namesake, strain, blisters, law, 0103 physical sciences, medicine, General Materials Science, Wafer, ion implantation, Electrical and Electronic Engineering, Composite material, 010306 general physics, carbon nanotubes, Mechanical Engineering, Blisters, General Chemistry, 021001 nanoscience & nanotechnology, Ion implantation, Nanolithography, Mechanics of Materials, Raman spectroscopy, symbols, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], nanofabrication, medicine.symptom, 0210 nano-technology
Abstract: International audience; Tuning the band structure and, in particular, gap opening in 1D and 2D materials through their deformation is a promising approach for their application in modern semiconductor devices. However, there is an essential breach between existing laboratory scale methods applied for deformation of low-dimensional materials and the needs of large-scale production. In this work, we propose a novel method which is potentially well compatible with high end technological applications: single-walled carbon nanotubes (SWCNTs) first deposited on the flat surface of a supporting wafer, which has been pre-implanted with H + and He + ions, are deformed in a controlled and repetitive manner over blisters formed after subsequent thermal annealing. By using resonant Raman spectroscopy, we demonstrate that the SWCNTs clamped by metallic stripes at their ends are deformed over blisters to an average tensile strain of 0.15±0.03%, which is found to be in a good agreement with the value calculated taking into account blister's dimensions. The principle of the technique may be applied to other 1D and 2D materials in perspective.
Published: 2018

15. Thermal evolution of H-related defects in H implanted Si: from nano-platelets to micro-cracks

Author: Nikolay Cherkashin, Fouad Okba, Alain Claverie, and Nicolas Daix
Subjects: 010302 applied physics, Materials science, Hydrogen, Silicon, Annealing (metallurgy), Nucleation, chemistry.chemical_element, Blisters, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Monocrystalline silicon, Ion implantation, chemistry, 0103 physical sciences, Nano, medicine, medicine.symptom, Composite material, 0210 nano-technology
Abstract: Annealing at moderate temperatures (300–450°C) of H implanted silicon leads to the formation of nano-platelets within minutes and of micro-cracks or blisters within hours. Up to now, the mechanism by which they transform from one to another type of H 2 filled defect was unknown. We have analyzed the evolution of the characteristics of platelets populations at the onset of micro-cracks formation and found it occurs when and where a group of « large » platelets of 50 nm in diameter are close enough, typically at about 50 nm from each other. In situ TEM confirms that sudden nucleation of micro-cracks in place of groups of platelets occurs. It is concluded that micro-crack nucleation results from elastic interactions between neighboring platelets, favoring the opening of the silicon crystal between them.
Published: 2018

16. Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding

Author: Daniel Bouchier, Marie Coste, Laetitia Vincent, Charles Renard, Timothée Molière, Nikolay Cherkashin, Géraldine Hallais, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut de Chimie de Toulouse (ICT-FR 2599), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut de Recherche pour le Développement (IRD)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS), Université Grenoble Alpes - UFR Pharmacie (UGA UFRP), Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Alchimer, Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Morphology (linguistics), Materials science, Oxide, 02 engineering and technology, Epitaxy, 01 natural sciences, Chemical beam epitaxy, Electron holography, chemistry.chemical_compound, Condensed Matter::Materials Science, 0103 physical sciences, Scanning transmission electron microscopy, Nano, Materials Chemistry, 010302 applied physics, [PHYS]Physics [physics], business.industry, Metals and Alloys, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, 0210 nano-technology, business, Layer (electronics)
Abstract: cited By 0; International audience; In this study, GaAs crystals were grown by chemical beam epitaxy on nominal (001) Si substrate over Ge nano-seeds placed within nano-holes opened through a 0.6 nm silica layer. GaAs crystal morphology and atomic organization at the interface between Ge and GaAs were studied by using complementary Scanning Transmission Electron Microscopy, energy dispersive X-ray spectrometry and dark-field electron holography. Fourfold symmetry GaAs crystals were obtained and found to be completely relaxed and twin free. Thus, the use of Ge nano-seeds to initiate the growth of GaAs results in the suppression of twins previously observed for direct GaAs growth on nominal (001) Si. Nevertheless, anti-phase domains were detected. A simple atomistic model is proposed which explains how Anti-Phase Boundaries develop at the junctions between Ge {113} facets, and {113} and {111} facets for As-stabilized GaAs growth.
Published: 2018

17. Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon

Author: Nikolay Cherkashin, Alain Claverie, Grégory Seine, Nabil Daghbouj, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Nano-Optique et Nanomatériaux pour l'optique (CEMES-NeO), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)
Subjects: 010302 applied physics, [PHYS]Physics [physics], Materials science, Thin layers, Silicon, Annealing (metallurgy), Doping, General Physics and Astronomy, chemistry.chemical_element, Blisters, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Fluence, Molecular physics, Ion, Ion implantation, chemistry, 0103 physical sciences, medicine, medicine.symptom, 0210 nano-technology
Abstract: International audience; Sequential He++H+ ion implantation, being more effective than the sole implantation of H+ or He+, is used by many to transfer thin layers of silicon onto different substrates. However, due to the poor understanding of the basic mechanisms involved in such a process, the implantation parameters to be used for the efficient delamination of a superficial layer are still subject to debate. In this work, by using various experimental techniques, we have studied the influence of the He and H relative depth-distributions imposed by the ion energies onto the result of the sequential implantation and annealing of the same fluence of He and H ions. Analyzing the characteristics of the blister populations observed after annealing and deducing the composition of the gas they contain from FEM simulations, we show that the trapping efficiency of He atoms in platelets and blisters during annealing depends on the behavior of the vacancies generated by the two implants within the H-rich region before and after annealing. Maximum efficiency of the sequential ion implantation is obtained when the H-rich region is able to trap all implanted He ions, while the vacancies it generated are not available to favor the formation of V-rich complexes after implantation then He-filled nano-bubbles after annealing. A technological option is to implant He+ ions first at such an energy that the damage it generates is located on the deeper side of the H profile.
Published: 2018

18. Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates

Author: V. A. Shchukin, Alexey E. Zhukov, N. N. Ledentsov, Nikolay Cherkashin, M. M. Kulagina, Mikhail V. Maximov, N. Yu. Gordeev, A. S. Payusov, Thibaud Denneulin, Yu. M. Shernyakov, Solar-Terrestrial Centre of Excellence [Brussels] ( STCE ), Matériaux et dispositifs pour l'Electronique et le Magnétisme ( CEMES-MEM ), Centre d'élaboration de matériaux et d'études structurales ( CEMES ), Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ), Solar-Terrestrial Centre of Excellence [Brussels] (STCE), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: OCIS codes: (140.0140) Lasers and laser optics, (140.5960) Semiconductor lasers, (140.7300) Visible lasers, (120.4120) Moiré techniques, (090.2880) Holographic interferometry, (140.6810) Thermal effects, (160.3380) Laser materials, Materials science, Active laser medium, [ PHYS.COND.CM-MS ] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 02 engineering and technology, Epitaxy, 01 natural sciences, law.invention, 010309 optics, Optics, law, 0103 physical sciences, Wafer, ddc:530, Leakage (electronics), Diode, business.industry, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, Wavelength, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Lasing threshold
Abstract: International audience; We report room temperature injection lasing in the yellow–orange spectral range (599–605 nm) in (Al x Ga 1–x) 0.5 In 0.5 P–GaAs diodes with 4 layers of tensile-strained In y Ga 1–y P quantum dot-like insertions. The wafers were grown by metal–organic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier insertions were applied to suppress leakage of non-equilibrium electrons from the gain medium. Laser diodes having a threshold current densities of ~7–10 kA/cm 2 at room temperature were realized for both (211) and (322) surface orientations at cavity lengths of ~1mm. Emission wavelength at room temperature ~600 nm is shorter by ~8 nm than previously reported. As an opposite example, the devices grown on (811) GaAs substrates did not show lasing at room temperature.
Published: 2018

19. Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

Author: P. Singer, Robin Cours, A. A. Abu Quba, M. Rumler, Mathias Rommel, Nikolay Cherkashin, Sylvie Schamm-Chardon, F. Stumpf, Publica, Friedrich-Alexander Universität Erlangen-Nürnberg (FAU), Fraunhofer Institute for Integrated Systems and Device Technology (Fraunhofer IISB), Fraunhofer (Fraunhofer-Gesellschaft), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)
Subjects: focused ion beam, Materials science, Silicon, Spreading resistance profiling, SPM, General Physics and Astronomy, chemistry.chemical_element, scanning probe microscopy, 02 engineering and technology, 01 natural sciences, Focused ion beam, conductive AFM, Scanning probe microscopy, FIB, 0103 physical sciences, Scanning transmission electron microscopy, Microscopy, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Composite material, SSRM, 010302 applied physics, scanning spreading resistance microscopy, Conductive atomic force microscopy, 021001 nanoscience & nanotechnology, cAFM, chemistry, Transmission electron microscopy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], TEM, 0210 nano-technology, damage
Abstract: International audience; The lateral damage induced by focused ion beam on silicon carbide was characterized using electrical scanning probe microscopy (SPM), namely, scanning spreading resistance microscopy and conductive atomic force microscopy (c-AFM). It is shown that the damage exceeds the purposely irradiated circles with a radius of 0.5 μm by several micrometres, up to 8 μm for the maximum applied ion dose of 1018 cm−2. Obtained SPM results are critically compared with earlier findings on silicon. For doses above the amorphization threshold, in both cases, three different areas can be distinguished. The purposely irradiated area exhibits resistances smaller than the non-affected substrate. A second region with strongly increasing resistance and a maximum saturation value surrounds it. The third region shows the transition from maximum resistance to the base resistance of the unaffected substrate. It correlates to the transition from amorphized to defect-rich to pristine crystalline substrate. Additionally, conventional transmission electron microscopy (TEM) and annular dark-field STEM were used to complement and explain the SPM results and get a further understanding of the defect spreading underneath the surface. Those measurements also show three different regions that correlate well with the regions observed from electrical SPM. TEM results further allow to explain observed differences in the electrical results for silicon and silicon carbide which are most prominent for ion doses above 3 × 1016 cm−2. Furthermore, the conventional approach to perform current-voltage measurements by c-AFM was critically reviewed and several improvements for measurement and analysis process were suggested that result in more reliable and impactful c-AFM data.
Published: 2018

20. A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in silicon

Author: Alain Claverie, Nabil Daghbouj, Nikolay Cherkashin, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Matériaux et dispositifs pour l'Electronique et le Magnétisme ( CEMES-MEM ), Centre d'élaboration de matériaux et d'études structurales ( CEMES ), Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), and Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS )
Subjects: Materials science, Silicon, Annealing (metallurgy), chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Ion, 0103 physical sciences, Thermal, medicine, Electrical and Electronic Engineering, Composite material, 010302 applied physics, [PHYS]Physics [physics], [ PHYS ] Physics [physics], Defects in silicon, Blisters, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Finite element method, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Ion implantation, chemistry, Elastic deformation, medicine.symptom, 0210 nano-technology
Abstract: cited By 0; International audience; H and He sequential ion implantation of silicon followed by annealing leads to the formation of gas pressurized cavities. When close enough to the surface, they elastically deform this surface and generate blisters. Gaining knowledge of the characteristics and thermal behavior of these blisters is mandatory for the optimization of the Smart Cut™ process. In this paper, we develop the idea and demonstrate that the pressure and the concentrations of the gases inside a blister can be inferred from its actual dimensions and depth location by using simulations based on Finite Element Method (FEM) modelling. We apply this method to initiate a study on the influence of the respective fluences of H and He ions used in a sequential implantation on blistering efficiency.
Published: 2018

21. Determination of the Free Gibbs Energy of Plate-Like Precipitates of Hydrogen Molecules and Silicon Vacancies Formed after H+ Ion Implantation into Silicon and Annealing

Author: Francois Xavier Darras, Nikolay Cherkashin, and Alain Claverie
Subjects: Materials science, Hydrogen, Silicon, Annealing (metallurgy), Quantitative Biology::Tissues and Organs, Nucleation, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Gibbs free energy, Monocrystalline silicon, symbols.namesake, Crystallography, Ion implantation, chemistry, Chemical physics, Transmission electron microscopy, 0103 physical sciences, symbols, General Materials Science, 010306 general physics, 0210 nano-technology
Abstract: Hydrogen implantation at room temperature into monocrystalline silicon leads to the formation of complex defects and also to the appearance of in-plane compressive stress. During annealing hydrogen atoms and vacancies co-precipitate into platelets lying on two types of habit planes. These platelets play a decisive role in the fracture of the material that can occur during further annealing and which is used for the manufacture of SOI wafers. Thus, their stress assisted nucleation mechanism has to be well understood. Here, we develop a formalism based on the Volmer’s model which allows calculating the variation of the free Gibbs energy of the system following the nucleation of a platelet. In an unstressed crystal, this energy only relies on the habit plane of the platelet. When the system is under stress, this energy also depends on a term coupling this stress and the strain field generated by the platelet. Because those energies control the nucleation rate of the platelets variants, we could calibrate our model using the transmission electron microscopy observations of the platelets occurrences as a function of depth and, thus, as a function of the magnitude of the intrinsic stress and the angles between the stress direction and Burgers vectors of the considered platelets. These experimental distributions allowed us adjusting the parameters describing the Gibbs free energy of platelets.
Published: 2015

22. Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency

Author: A. V. Sakharov, W. V. Lundin, S. Yu. Karpov, Andrey E. Nikolaev, A. F. Tsatsulnikov, M. A. Sinitsin, E. E. Zavarin, S. O. Usov, and Nikolay Cherkashin
Subjects: Materials science, 02 engineering and technology, Green-light, Nitride, 01 natural sciences, law.invention, Quality (physics), law, 0103 physical sciences, Materials Chemistry, Emission spectrum, Electrical and Electronic Engineering, 010302 applied physics, business.industry, Doping, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Polarization (waves), Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Degradation (geology), Optoelectronics, 0210 nano-technology, business, Light-emitting diode
Abstract: InGaN-based monolithic multi-color light emitting diodes (LEDs) are studied both experimentally and theoretically with the focus on factors controlling their emission spectra and efficiency. A number of LEDs with different designs of spacers separating active regions providing blue and green light emission is examined. Unexpected behavior of the multi-color LED efficiency is explained in terms of a simple balance model, assuming some degradation of materials quality of the green active region grown on top of the blue one. Electrical properties of spacers separating different active regions in the multi-color LED structures are identified as the major factor controlling the contributions of these active regions to the total emission spectrum. Correlations between the type and level of the spacer doping and the emission spectrum are found by simulations. Alternative ways of the spectral control by using polarization doping in the graded-composition InGaN and AlGaN alloys used as the spacers are suggested. Color characteristics of blue/green dual-wavelength LEDs are also measured and discussed, regarding their possible applications.
Published: 2015

23. Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes

Author: Alexei V. Sakharov, Maxim Korytov, Daniele Barettin, W. V. Lundin, Nikolay Cherkashin, Aldo Di Carlo, Andrei F. Tsatsulnikov, Martin Hÿtch, Alessandro Pecchia, Sergey Yu. Karpov, Andrei E Nikolaev, Matthias Auf der Maur, Department of Electronics Engineering, University of Rome 'Tor Vergeta', CNR-ISMN, Consiglio Nazionale delle Ricerche [Roma] (CNR), Russian Academy of Sciences [Moscow] (RAS), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Interférométrie, In situ et Instrumentation pour la Microscopie Electronique (CEMES-I3EM), Università degli Studi di Roma Tor Vergata [Roma], National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Bioengineering, 02 engineering and technology, Epitaxy, 7. Clean energy, 01 natural sciences, Settore ING-INF/01 - Elettronica, law.invention, Crystal, symbols.namesake, law, 0103 physical sciences, General Materials Science, Electrical and Electronic Engineering, High-resolution transmission electron microscopy, Quantum well, Diode, 010302 applied physics, [PHYS]Physics [physics], Auger effect, business.industry, Mechanical Engineering, General Chemistry, 021001 nanoscience & nanotechnology, Mechanics of Materials, Quantum dot, symbols, Optoelectronics, 0210 nano-technology, business, Light-emitting diode
Abstract: International audience; We present a study of blue III-nitride light-emitting diodes (LEDs) with multiple quantum well (MQW) and quantum dot (QD) active regions (ARs), comparing experimental and theoretical results. The LED samples were grown by metalorganic vapor phase epitaxy, utilizing growth interruption in the hydrogen/nitrogen atmosphere and variable reactor pressure to control the AR microstructure. Realistic configuration of the QD AR implied in simulations was directly extracted from HRTEM characterization of the grown QD-based structures. Multi-scale 2D simulations of the carrier transport inside the multiple QD AR have revealed a non-trivial pathway for carrier injection into the dots. Electrons and holes are found to penetrate deep into the multi-layer AR through the gaps between individual QDs and get into the dots via their side edges rather than via top and bottom interfaces. This enables a more homogeneous carrier distribution among the dots situated in different layers than among the laterally uniform quantum well (QWs) in the MQW AR. As a result, a lower turn-on voltage is predicted for QD-based LEDs, as compared to MQW ones. Simulations did not show any remarkable difference in the efficiencies of the MQW and QD-based LEDs, if the same recombination coefficients are utilized, i.e. a similar crystal quality of both types of LED structures is assumed. Measurements of the current–voltage characteristics of LEDs with both kinds of the AR have shown their close similarity, in contrast to theoretical predictions. This implies the conventional assumption of laterally uniform QWs not to be likely an adequate approximation for the carrier transport in MQW LED structures. Optical characterization of MQW and QD-based LEDs has demonstrated that the later ones exhibit a higher efficiency, which could be attributed to better crystal quality of the grown QD-based structures. The difference in the crystal quality explains the recently observed correlation between the growth pressure of LED structures and their efficiency and should be taken into account while further comparing performances of MQW and QD-based LEDs. In contrast to experimental results, our simulations did not reveal any advantages of using QD-based ARs over the MQW ones, if the same recombination constants are assumed for both cases. This fact demonstrates importance of accounting for growth-dependent factors, like crystal quality, which may limit the device performance. Nevertheless, a more uniform carrier injection into multi-layer QD ARs predicted by modeling may serve as the basis for further improvement of LED efficiency by lowering carrier density in individual QDs and, hence, suppressing the Auger recombination losses.
Published: 2017

24. Green, yellow and bright red (In,Ga,Al)P-GaP diode lasers grown on high-index GaAs substrates

Author: Mikhail V. Maximov, Nikolay Cherkashin, V. A. Shchukin, M. M. Kulagina, N. Yu. Gordeev, Yu. M. Shernyakov, A. S. Payusov, N. N. Ledentsov, Schefenacker Vision Systems GmbH, Schwaikheim, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [PHYS]Physics [physics], Materials science, Laser diode, business.industry, Physics::Optics, 02 engineering and technology, Laser, 7. Clean energy, Semiconductor laser theory, law.invention, Gallium arsenide, Full width at half maximum, chemistry.chemical_compound, Condensed Matter::Materials Science, 020210 optoelectronics & photonics, chemistry, law, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Lasing threshold, Beam divergence, Diode
Abstract: International audience; Low threshold current density (
Published: 2017

25. Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Author: Karim Huet, Sébastien Duguay, Nikolay Cherkashin, Yang Qiu, M. Quillec, Didier Blavette, Huiyuan Wang, Fuccio Cristiano, Antonino La Magna, Giuseppe Fisicaro, Fulvio Mazzamuto, Équipe Matériaux et Procédés pour la Nanoélectronique ( LAAS-MPN ), Laboratoire d'analyse et d'architecture des systèmes [Toulouse] ( LAAS ), Institut National Polytechnique [Toulouse] ( INP ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ) -Institut National Polytechnique [Toulouse] ( INP ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ), SCREEN-LASSE, Institute for Microelectronics and Microsystems/ Istituto per la Microelettronica e Microsistemi ( IMM ), Consiglio Nazionale delle Ricerche ( CNR ), Centre d'élaboration de matériaux et d'études structurales ( CEMES ), Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Groupe de physique des matériaux ( GPM ), Université de Rouen Normandie ( UNIROUEN ), Normandie Université ( NU ) -Normandie Université ( NU ) -Institut national des sciences appliquées Rouen Normandie ( INSA Rouen Normandie ), Normandie Université ( NU ) -Centre National de la Recherche Scientifique ( CNRS ), European Project : 258547,EC:FP7:ICT,FP7-ICT-2009-5,ATEMOX ( 2010 ), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Istituto per la Microelettronica e Microsistemi [Catania] (IMM), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), European Project: 258547,EC:FP7:ICT,FP7-ICT-2009-5,ATEMOX(2010), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Consiglio Nazionale delle Ricerche (CNR), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), and Normandie Université (NU)
Subjects: inorganic chemicals, Materials science, Dopant, Silicon, Mechanical Engineering, Analytical chemistry, chemistry.chemical_element, Bioengineering, General Chemistry, Atom probe, Condensed Matter Physics, Molecular physics, law.invention, Ion, Secondary ion mass spectrometry, Ion implantation, chemistry, law, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Dislocation, Burgers vector
Abstract: International audience; Damage evolution and dopant distribution during nanosecond laser thermal annealing of ion implanted silicon have been investigated by means of transmission electron microscopy, secondary ion mass spectrometry, and atom probe tomography. Different melting front positions were realized and studied: nonmelt, partial melt, and full melt with respect to the as-implanted dopant profile. In both boron and silicon implanted silicon samples, the most stable form among the observed defects is that of dislocation loops lying close to (001) and with Burgers vector parallel to the [001] direction, instead of conventional {111} dislocation loops or {311} rod-like defects, which are known to be more energetically favorable and are typically observed in ion implanted silicon. The observed results are explained in terms of a possible modification of the defect formation energy induced by the compressive stress developed in the nonmelted regions during laser annealing.
Published: 2014

26. Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

Author: W. V. Lundin, M. A. Yagovkina, Andrey E. Nikolaev, Nikolay Cherkashin, E. E. Zavarin, A. V. Sakharov, A. F. Tsatsul’nikov, Pavel N. Brunkov, S. O. Usov, Russian Academy of Sciences [Moscow] (RAS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Materials science, business.industry, 02 engineering and technology, Electroluminescence, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Atomic and Molecular Physics, and Optics, Buffer (optical fiber), Electronic, Optical and Magnetic Materials, law.invention, Crystal, law, 0103 physical sciences, Optoelectronics, Metalorganic vapour phase epitaxy, 0210 nano-technology, business, Layer (electronics), Light-emitting diode
Abstract: cited By 2; International audience; III-N blue LED structures with active regions based on InGaN nanoislands are studied. The structures are grown by metalorganic vapor-phase epitaxy (MOVPE) on GaN layers deposited by various methods for the initial formation of an epitaxial layer. It is shown that, due to strong carrier localization in narrow-gap InGaN nanoislands, the electroluminescence efficiency is independent of the crystal perfection of the material.
Published: 2014

27. Influence of the Germanium content on the amorphization of silicon–germanium alloys during ion implantation

Author: Nikolay Cherkashin, Alain Claverie, A. Belafhaili, Fuccio Cristiano, L. Laânab, LCS, Faculty of Sciences. Mohammed V University of Rabat, Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Université Mohammed V de Rabat [Agdal] (UM5), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Fabrication, chemistry.chemical_element, Germanium, 02 engineering and technology, 01 natural sciences, chemistry.chemical_compound, 0103 physical sciences, General Materials Science, [PHYS]Physics [physics], 010302 applied physics, business.industry, Mechanical Engineering, Doping, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Silicon-germanium, Amorphous solid, Crystallography, Ion implantation, chemistry, Mechanics of Materials, Transmission electron microscopy, Energy density, Optoelectronics, 0210 nano-technology, business
Abstract: International audience; We have studied by transmission electron microscopy the amorphization of silicon–germanium (SiGe) alloys by Ge+ implantation. We show that when implanted with the same amorphization dose, the resulting amorphous layers get narrower when the Ge content increases. The experimental results can be simulated using the critical damage energy density model assuming that the amorphization threshold rises linearly with the Ge content from 3 eV/at for pure Si to 5 eV/at for pure Ge. These results and simulations are needed to optimize the fabrication of highly doped regions in SiGe alloys.
Published: 2013

28. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

Author: W. V. Lundin, M. A. Yagovkina, Nikolay Cherkashin, Andrey E. Nikolaev, V. M. Ustinov, S. O. Usov, A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, [PHYS]Physics [physics], Fabrication, Materials science, business.industry, Heterojunction, Crystal growth, 02 engineering and technology, Chemical vapor deposition, Semiconductor device, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Surface coating, 0103 physical sciences, Optoelectronics, Metalorganic vapour phase epitaxy, 0210 nano-technology, business
Abstract: cited By 0; International audience; The epitaxial growth of InAlN layers and GaN/AlN/InAlN heterostructures for HEMTs in growth systems with horizontal reactors of the sizes 1 × 2", 3 × 2", and 6 × 2" is investigated. Studies of the structural properties of the grown InAlN layers and electrophysical parameters of the GaN/AlN/InAlN heterostructures show that the optimal quality of epitaxial growth is attained upon a compromise between the growth conditions for InGaN and AlGaN. A comparison of the epitaxial growth in different reactors shows that optimal conditions are realized in small-scale reactors which make possible the suppression of parasitic reactions in the gas phase. In addition, the size of the reactor should be sufficient to provide highly homogeneous heterostructure parameters over area for the subsequent fabrication of devices. The optimal compositions and thicknesses of the InAlN layer for attaining the highest conductance in GaN/AlN/InAlN transistor heterostructures.
Published: 2016

29. On the origin of dislocation loops in irradiated materials: A point of view from silicon

Author: Nikolay Cherkashin, Alain Claverie, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UPS), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées
Subjects: Ostwald ripening, Self interstitials, Nuclear and High Energy Physics, Silicon, Materials science, Interstitial defects, Crystal defects, Radioactive materials, Nucleation, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Ion bombardment, symbols.namesake, 0103 physical sciences, Thermal, Interfaces (materials), Formation energies, Point (geometry), Instrumentation, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], Crystallography, Condensed matter physics, Nuclear material, 021001 nanoscience & nanotechnology, Crystallographic defect, Irradiated materials, Defect formation energies, chemistry, symbols, Defects, Extended defect, Dislocation, 0210 nano-technology, Numerous dislocations
Abstract: cited By 1; International audience; Numerous dislocation loops are often observed in irradiated and nuclear materials, affecting many physical properties. The understanding of their origin and of their growth mechanism remains unclear rendering all modeling efforts elusive. In this paper, we remind the knowledge which has been gained during the last 20 years on the formation and growth of extrinsic dislocations loops in irradiated/implanted silicon. From the compilation of a large number of experimental results, a unified picture describing the thermal evolution of interstitial defects, from the di-interstitial stable at room temperature, to "magic-size" clusters then to rod-like defects and finally to large dislocation loops of two types has emerged. All these defects grow by Ostwald ripening, i.e. by interchanging the interstitial atoms they are composed of, and transform from one to the other driven by the resulting reduction of the defect formation energy. A model has been proposed and is now integrated into process simulators which quantitatively describes the thermal evolution of all these defects, based on pertinent formation energies. The influence of the proximity of free surfaces or other recombining interfaces can be integrated, allowing simulating the possible dissolution of defects. It is suggested that, beyond silicon, the same type of scenario may take place in many materials. Dislocation loops are just one, easily detectable among many, type of defects which forms during the growth of self-interstitials. They do not nucleate but result from the growth and transformation of smaller defects. © 2015 Elsevier B.V. All rights reserved.
Published: 2016

30. Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Author: Nabil Daghbouj, François-Xavier Darras, M. Fnaiech, Nikolay Cherkashin, Vincent Paillard, Alain Claverie, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Nano-Optique et Nanomatériaux pour l'optique (CEMES-NeO), Faculté des Sciences de Monastir (FSM), Université de Monastir - University of Monastir (UM), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Platelets, Silicon, Materials science, Cracks, Annealing (metallurgy), General Physics and Astronomy, chemistry.chemical_element, Silicon on insulator, 02 engineering and technology, Atomic mechanism, 01 natural sciences, Fluence, Co-implantation, State of the art, Silicon wafers, Annealing, Microelectronics, 0103 physical sciences, medicine, Surface blisters, Microelectronic industry, Wafer, Point defects, Silicon on insulator technology, Composite material, 010302 applied physics, [PHYS]Physics [physics], Metallurgy, Blisters, 021001 nanoscience & nanotechnology, Crystallographic defect, Ion implantation, chemistry, Nano-cracks, medicine.symptom, 0210 nano-technology, Silicon on insulator wafers, Thermal evolution
Abstract: cited By 0; International audience; Hydrogen and helium co-implantation is nowadays used to efficiently transfer thin Si layers and fabricate silicon on insulator wafers for the microelectronic industry. The synergy between the two implants which is reflected through the dramatic reduction of the total fluence needed to fracture silicon has been reported to be strongly influenced by the implantation order. Contradictory conclusions on the mechanisms involved in the formation and thermal evolution of defects and complexes have been drawn. In this work, we have experimentally studied in detail the characteristics of Si samples co-implanted with He and H, comparing the defects which are formed following each implantation and after annealing. We show that the second implant always ballistically destroys the stable defects and complexes formed after the first implant and that the redistribution of these point defects among new complexes drives the final difference observed in the samples after annealing. When H is implanted first, He precipitates in the form of nano-bubbles and agglomerates within H-related platelets and nano-cracks. When He is implanted first, the whole He fluence is ultimately used to pressurize H-related platelets which quickly evolve into micro-cracks and surface blisters. We provide detailed scenarios describing the atomic mechanisms involved during and after co-implantation and annealing which well-explain our results and the reasons for the apparent contradictions reported at the state of the art. © 2016 AIP Publishing LLC.
Published: 2016

31. Application of the O-lattice theory for the reconstruction of the high-angle near 90° tilt Si(110)/(001) boundary created by wafer bonding

Author: Nikolay Cherkashin, Oleg Kononchuk, Shay Reboh, Martin Hÿtch, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), SOITEC SA, Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Materials science, Polymers and Plastics, Condensed matter physics, Misorientation, business.industry, Wafer bonding, Metals and Alloys, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, Condensed Matter::Materials Science, Optics, Geometric phase, Transmission electron microscopy, Lattice (order), 0103 physical sciences, Ceramics and Composites, Grain boundary, Twist, 0210 nano-technology, business, Burgers vector
Abstract: This work presents an experimental and theoretical identification of defects and morphologies of a high-angle near-90° tilt Si ( 1 ¯ 1 0 ) / / ( 0 0 1 ) boundary created by direct wafer bonding. Two samples with different twist misorientations, between the ( 1 ¯ 1 0 ) layer and the (0 0 1) substrate, were studied using conventional transmission electron microscopy (TEM) and geometric phase analysis of high-resolution TEM images. The O-lattice theory was used for atom reconstruction of the interface along the [ 1 1 ¯ 0 ] sub / / [ 0 0 1 ] lay direction. It is demonstrated that to preserve covalent bonding across the interface, it should consist of { 1 1 ¯ 1 } sub , lay / / { 1 ¯ 1 2 } lay , sub facets intersected by maximum of six { 1 1 ¯ 1 } lay , sub planes with three 90° Shockley dislocations per facet. It is shown that a particular atom reconstruction is needed at transition points from one facet to another. The presence or absence of deviation from exact 90° tilt of the layer with respect to the substrate is shown to be related directly to the undulations of the interface. It is demonstrated that the latter has an influence on the Burgers vector of the dislocations adjusting in-plane twist misorientation. A general model for cubic face-centered materials for an arbitrary 〈1 1 0〉sub,lay tilt interface is proposed, which predicts the net Burgers vector and the spacing between dislocations necessary to realize transition from the lattice of the substrate (layer) to the layer (substrate).
Published: 2012

32. Reconstruction of a High Angle Tilt (110)/(001) Boundary in Si Using O-lattice Theory

Author: Oleg Kononchuk, Martin Hÿtch, Nikolay Cherkashin, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), SOITEC SA, Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Materials science, Condensed matter physics, business.industry, Wafer bonding, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Tilt (optics), Optics, Geometric phase, Transmission electron microscopy, 0103 physical sciences, Atom, General Materials Science, Facet, Dislocation, 0210 nano-technology, business
Abstract: International audience; High angle close to 90° tilt Si boundary created by direct wafer bonding (DWB) using SmartCut® technology is studied in this work. Experimental identification of defects and morphologies at the interface is realized using conventional transmission electron microscopy (TEM) and geometric phase analysis (GPA) of high-resolution TEM images. Atom reconstruction of the interface along the direction is carried out within the frame of the O-lattice theory. We demonstrate that to preserve covalent bonding across the interface it should consist of facets intersected by a maximum of six planes with three 90° Shockley dislocations per facet. For a long enough interface the formation of Frank dislocations is predicted with a period equal 6 times that of Shockley dislocations. Long range undulations of the interface are shown to be related directly to a deviation from exact 90° tilt of the layer with respect to the substrate.
Published: 2011

33. Specific features of depth distribution profiles of implanted cobalt ions in rutile TiO2

Author: Anna Macková, V. Hnatowicz, Nikolay Cherkashin, A. A. Achkeev, Lenar Tagirov, Rustam Khaibullin, Nuclear Physics Institute, AS CR and Research Center, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Materials science, Precipitation (chemistry), Diffusion, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, Ion, Condensed Matter::Materials Science, chemistry, Impurity, Rutile, Sputtering, 0103 physical sciences, 0210 nano-technology, Cobalt, Solid solution
Abstract: International audience; This paper reports on the results of the calculation of the depth distribution profiles of the concentration of the impurity implanted into an anisotropic crystalline material. The sputtering of the irradiated material, fast one-dimensional diffusion of the impurity along structural channels, and accumulation of the implanted impurity at different depths have been taken into account. The results of the calculations have been compared with the experimental distribution profiles of cobalt ions implanted into the crystal structure of rutile TiO2 along and across structural channels at different temperatures of the irradiated substrate. A comparison of the model and experimental profiles has made it possible to evaluate the precipitation rate of cobalt in the TiO2 matrix on different precipitation centers. A model has been proposed for explaining the unusual shift in the peak of the concentration distribution of implanted ions deep into the sample with an increase in the temperature of the irradiated substrate. The model has allowed one to separate the contributions from different phases of the impurity (nanoparticles and solid solution) to the magnetism of the Co: TiO2 system.
Published: 2011

34. Strain mapping in layers and devices by electron holography

Author: Florent Houdellier, Alain Claverie, Nikolay Cherkashin, Shay Reboh, and Martin Hÿtch
Subjects: 010302 applied physics, Diffraction, Reflection high-energy electron diffraction, Materials science, business.industry, 02 engineering and technology, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electron holography, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Optics, Electron diffraction, Transmission electron microscopy, 0103 physical sciences, Materials Chemistry, Energy filtered transmission electron microscopy, Electrical and Electronic Engineering, 0210 nano-technology, High-resolution transmission electron microscopy, business, Electron backscatter diffraction
Abstract: Strain can be measured at the micron scale by Raman spectroscopy and X-ray diffraction, but at the nanoscale, the only viable tool is transmission electron microscopy (TEM). TEM techniques can be divided into two categories: diffraction based techniques such as convergent-beam-electron-diffraction or nanobeam electron diffraction, and imaged based techniques such as high-resoludon electron microscopy or the new technique of dark-field electron holography (HoloDark). The latter has recently been invented to measure strain to high precision (2 × 10 ―4 ), nanometer spatial resolution, and for micron fields of view. In this article, we present two latest and typical results from the HoloDark technique (which is applicable to all standard focused-ion beam prepared crystalline samples): mapping of strain in contact etch stop layers induced strain structures, and in implanted layers, In such materials and structures, the Holodark technique, although still perfectible, has no competitor.
Published: 2010

35. (Invited) Strain Mapping of Layers and Devices Using Electron Holography

Author: Nikolay Cherkashin, Alain Claverie, M. Hyütch, S. Reboh, Florian Hüe, Florent Houdellier, and Etienne Snoeck
Subjects: 010302 applied physics, Materials science, Silicon, business.industry, Resolution (electron density), Transistor, chemistry.chemical_element, Strained silicon, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Electron holography, law.invention, PMOS logic, chemistry, law, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, NMOS logic, Beam (structure)
Abstract: We present the HoloDark technique which has recently been invented and allows one to map strain in two dimensions in layers and devices with nanometer resolution, high precision and large field of view. The technique is based on electron holography and is applicable to all standard focused-ion beam FIB prepared crystalline samples. We show a panorama of typical results obtained in SiGe stacks, ion implanted silicon, strained silicon channel nMOS and pMOS type transistors and in the challenging case of strained silicon FinFETs, In such materials and structures, the HoloDark technique, although still perfectible, appears as the only technique able to provide reliable and extended data against which simulations can be calibrated.
Published: 2010

36. Diffusion and activation of phosphorus in germanium

Author: Alain Claverie, Ioanna Zergioti, Nikolay Cherkashin, P. Tsouroutas, Dimitris Tsoukalas, National Technical University of Athens [Athens] (NTUA), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Materials science, Dopant, Annealing (metallurgy), Mechanical Engineering, Doping, Analytical chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Secondary ion mass spectrometry, Condensed Matter::Materials Science, Van der Pauw method, Ion implantation, Mechanics of Materials, Vacancy defect, 0103 physical sciences, General Materials Science, 0210 nano-technology, Sheet resistance
Abstract: International audience; In this work we investigate the diffusion and the activation behavior of implanted phosphorus in Ge. We used both conventional thermal processing as well as laser annealing by pulsed ns Nd–YAG laser. Chemical profiles were obtained by secondary-ion-mass spectrometry (SIMS) and sheet resistance was estimated by Van der Pauw method. These measurements demonstrated a box-shaped dopant profile for both conventional and laser annealed samples which are in agreement with other research reports indicating enhanced dopant diffusivity. From these experiments and critical comparison with other studies we conclude about the value of the intrinsic diffusion coefficient and we discuss the validity of the doubly charged vacancy model in simulating our experiments. To more accurately account for these parameters we have also implemented a pileup and a segregation model to simulate the dopant loss due to outdiffusion of phosphorus during the annealing process. In order to understand the influence of defects on transient dopant diffusion as well as on outdiffusion we have also annealed P implanted Ge prior to conventional annealing with laser above melting threshold to eliminate ion implantation defects as these are monitored by transmission electron microscopy.
Published: 2008

37. Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation

Author: G. Ben Assayag, Michele Perego, Panagiotis Dimitrakis, S. Schamm, Nikolay Cherkashin, Marco Fanciulli, Pascal Normand, V. Ioannou-Sougleridis, Caroline Bonafos, V. Em. Vamvakas, National Center for Scientific Research 'Demokritos' (NCSR), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Laboratorio Nazionale MDM CNR-INFM, National Center for Scientific Research 'Demokritos' ( NCSR ), Centre d'élaboration de matériaux et d'études structurales ( CEMES ), Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ), Matériaux et dispositifs pour l'Electronique et le Magnétisme ( CEMES-MEM ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse)
Subjects: [PHYS]Physics [physics], 010302 applied physics, [ PHYS ] Physics [physics], Chemistry, education, Oxide, Analytical chemistry, 02 engineering and technology, Trapping, Nitride, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Secondary ion mass spectrometry, chemistry.chemical_compound, Ion implantation, Low energy, Transmission electron microscopy, 0103 physical sciences, Wet oxidation, Electrical and Electronic Engineering, 0210 nano-technology
Abstract: International audience; This work presents an alternative method for the formation of the top oxide in oxide-nitride-oxide structures. The method utilizes low-energy (1 keV) Si ion implantation into thin oxide-nitride stacks, followed by low temperature wet oxidation. Transmission electron microscopy examination clearly indicates the formation of a three-layer structure, verified also by Time-of flight secondary ion mass spectrometry. The electrical characteristics of the oxide-nitride-oxide stacks exhibit strong trapping effects and excellent retention characteristics resulting to a 1.5 V 10-year memory window at 125 °C.
Published: 2007

38. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

Author: Axel Hoffmann, Nikita Yu. Gordeev, Nikolay Cherkashin, S. Schlichting, Jari Lyytikäinen, Mikhail V. Maximov, Nikolay N. Ledentsov, Yu. M. Shernyakov, A. S. Payusov, V. A. Shchukin, Oleg G. Okhotnikov, Felix Nippert, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)
Subjects: [PHYS]Physics [physics], Materials science, business.industry, Doping, Heterojunction, Electroluminescence, Gallium arsenide, law.invention, chemistry.chemical_compound, chemistry, law, Optoelectronics, Electronic band structure, business, Molecular beam epitaxy, Diode, Light-emitting diode
Abstract: We report on green (550–560 nm) electroluminescence (EL) from (Al 0.5 Ga 0.5 ) 0.5 In 0.5 P–(Al 0.8 Ga 0.2 ) 0.5 In 0.5 P double p–i–n heterostructures with monolayer–scale tensile strained GaP insertions in the cladding layers and light–emitting diodes (LEDs) based thereupon. The structures are grown side–by–side on high–index and (100) GaAs substrates by molecular beam epitaxy. Cross–sectional transmission electron microscopy studies indicate that GaP insertions are flat, thus the GaP–barrier substrate orientation–dependent heights should match the predictions of the flat model. At moderate current densities (~500 A/cm 2 ) the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)–grown strictures, the EL spectra of (211) and (311)–grown devices are shifted towards shorter wavelengths (~550 nm at room temperature). At high current densities (>1 kA/cm 2 ) a much higher EL intensity is achieved for the devices grown on high–index substrates. The integrated intensity of (311)–grown structures gradually saturates at current densities above 4 kA/cm 2 , whereas no saturation is revealed for (211)–grown structures up to the current densities above 14 kA/cm 2 . We attribute the effect to the surface orientation–dependent engineering of the GaP band structure which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p– doped (Al 0.8 Ga 0.2 ) 0.5 In 0.5 P cladding layers.
Published: 2015

39. Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy

Author: Nabil Daghbouj, Nikolay Cherkashin, François-Xavier Darras, Alain Claverie, M. Fnaiech, Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Faculté des Sciences de Monastir (FSM), Université de Monastir - University of Monastir (UM), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Finite element method models, Atoms, Finite element method, Materials science, Cracks, Silicon, Silicon wafer surface, Annealing (metallurgy), Experimental techniques, General Physics and Astronomy, chemistry.chemical_element, Low energy ion implantation, 02 engineering and technology, 01 natural sciences, Fluence, Silicon wafers, Physics::Fluid Dynamics, Analytical expressions, 0103 physical sciences, medicine, Low energy implantation, Wafer, Area density, Composite material, Thin film, Astrophysics::Galaxy Astrophysics, 010302 applied physics, [PHYS]Physics [physics], Blisters, 021001 nanoscience & nanotechnology, Crystallography, Ion implantation, chemistry, Implantation energies, medicine.symptom, 0210 nano-technology, Smart cut technology
Abstract: cited By 2; International audience; We have studied the effect of reducing the implantation energy towards low keV values on the areal density of He and H atoms stored within populations of blister cavities formed by co-implantation of the same fluence of He then H ions into Si(001) wafers and annealing. Using a variety of experimental techniques, we have measured blister heights and depth from the surface, diameter, areal density of the cracks from which they originate as functions of implantation energy and fluence. We show that there is a direct correlation between the diameters of the cracks and the heights of the associated blisters. This correlation only depends on the implantation energy, i.e., only on the depth at which the cracks are located. Using finite element method modeling, we infer the pressure inside the blister cavities from the elastic deformations they generate, i.e., from the height of the blisters. From this, we demonstrate that the gas pressure within a blister only depends on the diameter of the associated crack and not on its depth position and derive an analytical expression relating these parameters. Relating the pressure inside a blister to the respective concentrations of gas molecules it contains, we deduce the areal densities of He and H atoms contained within the populations of blisters. After low-energy implantations (8 keV He+, 3 keV H+), all the implanted He and H atoms contribute to the formation of the blisters. There is no measurable exo-diffusion of any of the implanted gases, in contrast to what was assumed at the state of the art to explain the failure of the Smart-Cut technology when using very low energy ion implantation for the fabrication of ultra-thin layers. Alternative explanations must be investigated.
Published: 2015

40. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency

Author: M. A. Sinitsyn, Alexei V. Sakharov, S. O. Usov, Sergey Yu. Karpov, W. V. Lundin, Andrey E. Nikolaev, E. E. Zavarin, Andrei F. Tsatsulnikov, Nikolay Cherkashin, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Superlattice, Gallium nitride, 02 engineering and technology, 01 natural sciences, law.invention, chemistry.chemical_compound, law, 0103 physical sciences, Emission spectrum, Quantum well, 010302 applied physics, [PHYS]Physics [physics], business.industry, Heterojunction, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Surface coating, chemistry, Optoelectronics, Quantum efficiency, 0210 nano-technology, business, Light-emitting diode
Abstract: cited By 2; International audience; The design features of light-emitting-diode heterostructures with a monolithic InGaN/GaN active region containing several InGaN quantum wells (QWs) emitting at different wavelengths, grown by metal-organic chemical vapor deposition, are studied. It is shown that the number of emission bands can be raised to three by increasing the number of deposited InGaN QWs with different indium contents. The emission efficiency decreases by approximately 30% with increasing number of QWs at high currents. The dependences of the optical properties of the heterostructures on the number of QWs and types of barriers between the QWs (GaN layer or InGaN/GaN short-period superlattice) are analyzed. It is demonstrated that the ratio between the intensities of the emission lines widely varies with current flowing through the structure and greatly depends on the type and width of the barriers between the QWs.
Published: 2015

41. Modelling of point defect complex formation and its application to H+ ion implanted silicon

Author: Alain Claverie, Nicolas Ratel-Ramond, Nikolay Cherkashin, P. Pochet, François-Xavier Darras, Shay Reboh, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)
Subjects: [PHYS]Physics [physics], Materials science, Polymers and Plastics, Silicon, business.industry, Metals and Alloys, chemistry.chemical_element, Crystallographic defect, Electronic, Optical and Magnetic Materials, Ion, Crystal, Crystallography, Semiconductor, chemistry, Chemical physics, Impurity, Ceramics and Composites, Density functional theory, Diffusion (business), business
Abstract: International audience; The diffusion and interaction of impurity atoms in semiconductors play an important role in modelling of the technological processes for device fabrication. Being mobile, impurity atoms, vacancies and interstitials can recombine and/or precipitate in the form of stable complexes which leads to the modification of target material properties. Here, we present an analytic model that predicts the concentrations of such complexes as a function of point defect concentrations using the probabilities for point defects to encounter and the probabilities for the formation of specific complexes dependent on their formation energies. This approach is general and can be used in different systems. We applied this model to the formation of different complexes after H+ implantation in silicon at room temperature. The formation energies of the complexes were calculated using the density functional theory. We linked the macroscopic strain measured in the implanted crystal to the individual deformation fields generated by the different complexes and to their concentrations. Such model calibration allowed determining the diffusion coefficients of silicon vacancies and interstitials at room temperature, the time required for the formation of all the complexes, the concentrations of complexes as a function of H concentration and the specific role of some complexes in generating strain. The model can be extended to the case of the systems co-implanted with different ions and can be applied for developing the SmartCut® technology used for creating innovative substrates.
Published: 2015

42. Realistic model of LED structure with InGaN quantum-dots active region

Author: Nikolay Cherkashin, Walter Rodrigues, Sergey Yu. Karpov, Matthias Auf der Maur, Andrei F. Tsatsulnikov, W. V. Lundin, Alexei V. Sakharov, Daniele Barettin, Andrey E. Nikolaev, Alessandro Pecchia, Martin Hÿtch, Aldo Di Carlo, Department of Electronics Engineering, University of Rome 'Tor Vergeta', CNR-ISMN, Consiglio Nazionale delle Ricerche [Roma] (CNR), A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Università degli Studi di Roma Tor Vergata [Roma], National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Physics, [PHYS]Physics [physics], Nanostructure, Condensed matter physics, business.industry, LEDs, Continuum (design consultancy), Heterojunction, modeling, semiconductors, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Settore ING-INF/01 - Elettronica, law.invention, Computational physics, Semiconductor, Quantum dot, Quantum dot laser, law, Electro-absorption modulator, Quantum Dots, business, Light-emitting diode
Abstract: cited By 0; International audience; We report on numerical simulations of quantum-dot heterostructures derived from experimental high-resolution transmission electron microscopy results. A real sample containing large InGaN islands with size of ten of nm and non-uniform In content is analyzed. The three-dimensional models for the quantum dots have been directly extrapolated from experimental results by a numerical algorithm. We show electromechanical, continuum k→ · p→, empirical tight-binding and optical calculations for these realistic structures, which present a very good agreement if compared with experimental measurements, implying that the use of realistic structures can provide significant improvements into the modeling and the understanding of quantum-dot nanostructures.
Published: 2015

43. Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

Author: David Troadec, S. Suresh, Konstantinos Pantzas, Martin Hÿtch, Christian Tanguy, Abdallah Ougazzaden, Nikolay Cherkashin, Julien Barjon, Gilles Patriarche, T. Rivera, Mathieu Kociak, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de Physique des Solides (LPS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Orange Labs [Issy les Moulineaux], France Télécom, Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Photoluminescence, Materials science, Condensed matter physics, business.industry, Wide-bandgap semiconductor, General Physics and Astronomy, chemistry.chemical_element, Heterojunction, Substrate (electronics), chemistry, Microscopy, Scanning transmission electron microscopy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Luminescence, business, Indium
Abstract: cited By 5; International audience; Advanced electron microscopy techniques are combined for the first time to measure the composition, strain, and optical luminescence, of InGaN/GaN multi-layered structures down to the nanometer scale. Compositional fluctuations observed in InGaN epilayers are suppressed in these multi-layered structures up to a thickness of 100 nm and for an indium composition of 16%. The multi-layered structures remain pseudomorphically accommodated on the GaN substrate and exhibit single-peak, homogeneous luminescence so long as the composition is homogeneous.
Published: 2015

44. Defects evolution and dopant activation anomalies in ion implanted silicon

Author: Nick E. B. Cowern, Wilfried Lerch, Nikolay Cherkashin, Y. Lamrani, Fabrice Severac, O. Marcelot, Alain Claverie, Simona Boninelli, M. Gavelle, Fuccio Cristiano, Silke Paul, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), University of Surrey (UNIS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Nuclear and High Energy Physics, Materials science, Dopant, Silicon, Condensed matter physics, technology, industry, and agriculture, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Dopant Activation, 021001 nanoscience & nanotechnology, 01 natural sciences, Crystallographic defect, Semimetal, Ion implantation, chemistry, Transmission electron microscopy, 0103 physical sciences, Diffusion (business), 0210 nano-technology, Instrumentation
Abstract: International audience; The interactions between the defects and the implanted dopants are at the origin of the diffusion and activation anomalies that are among the major obstacles to the realisation of ultra-shallow junctions satisfying the ITRS requirements.In this paper, we present some recent results on the evolution of extended defects in technology relevant conditions for the fabrication of p+/n ultra-shallow junctions and elucidate for each of them the role of the defects in the diffusion and activation anomalies exhibited by the implanted dopants. The presented studies range from the formation of large Boron-Interstitial Clusters in high-fluence B+-implanted silicon, to the deactivation/reactivation of preamorphised ultra-shallow junctions and, finally, to the impact of co-implanted F on the thermal stability of preamorphised junctions.
Published: 2006

45. Structure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted Silicon

Author: Nikolay Cherkashin, Martin Hÿtch, Alain Claverie, Fuccio Cristiano, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Materials science, Silicon, Plane (geometry), chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Molecular physics, Atomic and Molecular Physics, and Optics, Ion, Crystallography, chemistry, 0103 physical sciences, Displacement field, General Materials Science, Dislocation, 0210 nano-technology, High-resolution transmission electron microscopy, Burgers vector, Beam (structure)
Abstract: International audience; In this work, we present a detailed structural characterization of the defects formed after 0.5 keV B+ implantation into Si to a dose of 1x1015 ions/cm2 and annealed at 650°C and 750°C during different times up to 160 s. The clusters were characterized by making use of Weak Beam and High Resolution Transmission Electron Microscopy (HRTEM) imaging. They are found to be platelets of several nanometer size with (001) habit plane. Conventional TEM procedure based on defect contrast behavior was applied to determine the directions of their Burger’s vectors. Geometric Phase Analysis of HRTEM images was used to measure the displacement field around these objects and, thus, to unambiguously determine their Burger’s vectors. Finally five types of dislocation loops lying on (001) plane are marked out: with ] 001 [1/3 ≅ b and b ∝ [1 0 1], [-1 0 1], [0 1 1], [0 -1 1].
Published: 2005

46. Size and aerial density distributions of Ge nanocrystals in a SiO2 layer produced by molecular beam epitaxy and rapid thermal processing

Author: Panagiotis Dimitrakis, Nikolay Cherkashin, Alain Claverie, A. Nylandsted Larsen, Peter I. Gaiduk, Aloke Kanjilal, J. L. Hansen, Pascal Normand, Dimitris Tsoukalas, Department of Physics and Astronomy [Aarhus], Aarhus University [Aarhus], National Center for Scientific Research 'Demokritos' (NCSR), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Materials science, business.industry, Oxide, Mineralogy, chemistry.chemical_element, Germanium, 02 engineering and technology, General Chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, chemistry.chemical_compound, Tunnel effect, Density distribution, chemistry, Nanocrystal, Rapid thermal processing, 0103 physical sciences, Optoelectronics, General Materials Science, 0210 nano-technology, business, Layer (electronics), Molecular beam epitaxy
Abstract: International audience; We discuss the distribution of size and aerial density of Ge nanocrystals in a metal-oxide-semiconductor (MOS) memory structure fabricated by molecular beam epitaxy combined with rapid thermal processing; the size and aerial density of Ge nanocrystals are controlled by varying the thickness of the deposited Ge layer and the processing time. Variation of tunnel oxide thickness is demonstrated with the extension of the processing time. The effect of processing time and tunnel oxide thickness on the electrical properties of the MOS structures is investigated by high frequency capacitance–voltage measurements.
Published: 2005

47. Thermal evolution of {113} defects in silicon: transformation against dissolution

Author: Y. Lamrani, Fuccio Cristiano, B. de Mauduit, P. Calvo, Alain Claverie, Nikolay Cherkashin, B. Colombeau, Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), University of Surrey (UNIS), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)
Subjects: Ostwald ripening, Nuclear and High Energy Physics, Materials science, Silicon, Annealing (metallurgy), Population, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, symbols.namesake, 0103 physical sciences, Thermal, Well-defined, education, Instrumentation, Dissolution, [PHYS]Physics [physics], 010302 applied physics, education.field_of_study, business.industry, 021001 nanoscience & nanotechnology, Crystallography, Semiconductor, chemistry, Chemical physics, symbols, 0210 nano-technology, business
Abstract: International audience; Modelling of diffusion anomalies in Si requires reliable data on {1 1 3} defects evolution during annealing under well defined conditions. This paper reports on the conditions under which {1 1 3} defects can alternatively dissolve or transform into dislocation loops (DLs). Our results definitely prove that the dissolution of {1 1 3} defects is not an intrinsic characteristic of these defects but reflects the competition between atomic interchange between defects and diffusion to the surface. At low temperature (up to 800 °C), these defects can reach large sizes before dissolving. If the annealing temperature is high enough (above 850 °C), these defects can transform into DLs probably through a reaction barrier. Once formed, these DLs provide internal sinks within the population and transform the non-conservative Ostwald ripening into a quasi-conservative Ostwald ripening. In the mean time, the flux of Si atoms towards the surface that drives the defect dissolution is suppressed and replaced by internal fluxes between defects of different types.
Published: 2004

48. Depth dependence of defect evolution and TED during annealing

Author: Nick E. B. Cowern, E. Lampin, Y. Lamrani, Alain Claverie, Nikolay Cherkashin, B. Colombeau, P. Calvo, Fuccio Cristiano, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: 010302 applied physics, Ostwald ripening, Nuclear and High Energy Physics, Supersaturation, Materials science, Condensed matter physics, Silicon, Annealing (metallurgy), business.industry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Crystallographic defect, symbols.namesake, Crystallography, Ion implantation, Semiconductor, chemistry, Transmission electron microscopy, 0103 physical sciences, symbols, 0210 nano-technology, business, Instrumentation
Abstract: A quantitative transmission electron microscopy (TEM) study on the depth profile of extended defects, formed after Si implantation, has been carried out. Two different Si+ implant conditions have been considered. TEM analysis for the highest energy/dose shows that {1 1 3} defects evolve into dislocation loops whilst the defect depth distribution remains unchanged as a function of annealing time. For the lowest energy/dose, {1 1 3} defects grow and dissolve while the defect band shrinks preferentially on the surface side. At the same time, extraction of boron transient enhanced diffusion (TED) as a function of depth shows a decrease of the supersaturation towards the surface, starting at the location of the defect band. The study clearly shows that in these systems the silicon surface is the principal sink for interstitials. The results provide a critical test of the ability of physical models to simulate defect evolution and TED.
Published: 2004

49. Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis

Author: Konstantinos Beltsios, D. Skarlatos, Marzia Carrada, Caroline Bonafos, Dimitris Tsoukalas, Pascal Normand, Nikolay Cherkashin, Gérard Benassayag, M. Ameen, Panagiotis Dimitrakis, V. Soncini, Alain Claverie, E. Kapetanakis, A. Agarwal, Ch. Sohl, National Center for Scientific Research 'Demokritos' (NCSR), University of Ioannina, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), National Center for Scientific Research 'Demokritos' ( NCSR ), Matériaux et dispositifs pour l'Electronique et le Magnétisme ( CEMES-MEM ), Centre d'élaboration de matériaux et d'études structurales ( CEMES ), Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), and Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS )
Subjects: Materials science, nonvolatile memory, Silicon, Annealing (metallurgy), Oxide, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, nanocrystal memory, chemistry.chemical_compound, nanocrystals, 0103 physical sciences, ion implantation, implantation, Electrical measurements, Electrical and Electronic Engineering, Thin film, [PHYS]Physics [physics], 010302 applied physics, [ PHYS ] Physics [physics], 2-d arrays, business.industry, technology, industry, and agriculture, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Non-volatile memory, Ion implantation, chemistry, Nanocrystal, Optoelectronics, ion beam synthesis, 0210 nano-technology, business
Abstract: The structural and electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals are reported fabricated by low-energy silicon implantation and with subsequent annealing in inert and diluted oxygen. Thermal treatment in diluted oxygen increases the thickness of the control oxide, does not affect significantly the size of the nanocrystals, and improves the integrity of the oxide. As a result, strong charge storage effects at low gate voltages and enhanced charge retention times are observed through electrical measurements of MOS capacitors. These results indicate that a combination of low-energy silicon implants and annealing in diluted oxygen permits the fabrication of low-voltage nonvolatile memory devices. (C) 2003 Elsevier Science B.V. All rights reserved. Microelectronic Engineering
Published: 2003

50. (In,Ga,Al)P–GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

Author: Yu. M. Shernyakov, V. A. Shchukin, M. M. Kulagina, Mikhail V. Maximov, A. S. Payusov, Nikolay Cherkashin, N. Yu. Gordeev, Nikolai N. Ledentsov, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, 02 engineering and technology, Epitaxy, 7. Clean energy, 01 natural sciences, law.invention, law, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, Diode, [PHYS]Physics [physics], 010302 applied physics, Laser diode, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Laser, Electronic, Optical and Magnetic Materials, Wavelength, Full width at half maximum, Optoelectronics, 0210 nano-technology, business, Lasing threshold, Beam divergence
Abstract: International audience; We report on low threshold current density (
Published: 2017

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