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GHz operating single port SAW resonators have been manufactured on Sc0.3Al0.7N/Si substrate. The thickness of the ScAlN thin layer was 0.8 μm. Advanced nano‐lithographic techniques have been developed for devices manufacturing. Rayleigh and Sezawa modes have been evidenced on Sc0.3Al0.7N/Si structure. The targeted applications are temperature sensors for harsh environmental operations. The sensitivity and temperature coefficient of frequency (TCF) of the manufactured devices have been experimentally determined and analyzed. The mode shapes of the resonances that appear in the devices supported on Sc0.3Al0.7N/Si substrate were evidenced by finite element method (FEM) simulations. A technique that combines FEM with Coupling of Modes (COM) was used for the determination of the resonance frequencies. Simulations performed for the temperature dependence of the resonance frequency led to results close to the experimental ones for the Rayleigh mode as well as for the Sezawa mode for devices supported on Sc0.3Al0.7N/Si substrate. © 2024 Institute of Electrical Engineer of Japan and Wiley Periodicals LLC. [ABSTRACT FROM AUTHOR]

GHz operating single port SAW resonators have been manufactured on Sc0.3Al0.7N/Si substrate. The thickness of the ScAlN thin layer was 0.8 μm. Advanced nano‐lithographic techniques have been developed for devices manufacturing. Rayleigh and Sezawa modes have been evidenced on Sc0.3Al0.7N/Si structure. The targeted applications are temperature sensors for harsh environmental operations. The sensitivity and temperature coefficient of frequency (TCF) of the manufactured devices have been experimentally determined and analyzed. The mode shapes of the resonances that appear in the devices supported on Sc0.3Al0.7N/Si substrate were evidenced by finite element method (FEM) simulations. A technique that combines FEM with Coupling of Modes (COM) was used for the determination of the resonance frequencies. Simulations performed for the temperature dependence of the resonance frequency led to results close to the experimental ones for the Rayleigh mode as well as for the Sezawa mode for devices supported on Sc0.3Al0.7N/Si substrate. © 2024 Institute of Electrical Engineer of Japan and Wiley Periodicals LLC. [ABSTRACT FROM AUTHOR]

A two port surface acoustic wave (SAW) device was developed to be used for the control and excitation via spin waves (SW). The structure was manufactured using advanced nanolithography techniques, on GaN/Si, enabling fundamental Rayleigh interdigitated transducer (IDT) resonances in GHz frequency range. The ferromagnetic resonance of the magnetostrictive Ni/NiFeSi layer placed between the IDTs of the SAW device can be tuned to the SAW resonance frequency by magnetic fields. Using structures with finger and interdigit spacing of 170 nm and 100 nm, fundamental Rayleigh IDT resonance frequencies of 6.4 and 10.4 GHz have been obtained. Coupling of SAW to SW was demonstrated through transmission measurements at the fundamental Rayleigh frequencies in a magnetic field, μ0H from -280 to +280 mT, at different angles (θ) between the SAW propagation direction and the magnetic field direction. For the 6.4 GHz resonator a maximum decrease of about 1.2 dB occurred in |S21|, at μ0H = 30 mT and at θ = 45. Time-gated processing of the frequency domain raw data was used to remove the direct electromagnetic cross talk and triple transit effects. Nonreciprocity associated to the coupling was analyzed for the two SAW structures. The quantitative influence of the magnetic field strength on the phase of the transmission parameters is also presented.