Search

We study the interplay of lattice, spin and orbital degrees of freedom in a two-dimensional model system: a flat square lattice of Te atoms on a Au(100) surface. The atomic structure of the Te monolayer is determined by scanning tunneling microscopy (STM) and quantitative low-energy electron diffraction (LEED-IV). Using spin- and angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT), we observe a Te-Au interface state with highly anisotropic Rashba-type spin-orbit splitting at the X point of the Brillouin zone. Based on a profound symmetry and tight-binding analysis, we show how in-plane square lattice symmetry and broken inversion symmetry at the Te-Au interface together enforce a remarkably anisotropic orbital Rashba effect which strongly modulates the spin splitting., Comment: 7 pages, 5 figures

It turns out that some empirical facts in Big Data are the effects of properties of large numbers. Zipf's law 'noise' is an example of such an artefact. We expose several properties of the power law distributions and of similar distribution that occur when the population is finite and the rank and counts of elements in the population are natural numbers. We are particularly concerned with the low-rank end of the graph of the law, the potential of noise in the law, and with the approximation of the number of types of objects at various ranks. Approximations instead of exact solutions are the center of attention. Consequences in the interpretation of Zipf's law are discussed., Comment: 7 pages, 4 figures

Three-dimensional (3D) electronic band structure is fundamental for understanding a vast diversity of physical phenomena in solid-state systems, including topological phases, interlayer interactions in van der Waals materials, dimensionality-driven phase transitions, etc. Interpretation of ARPES data in terms of 3D electron dispersions is commonly based on the free-electron approximation for the photoemission final states. Our soft-X-ray ARPES data on Ag metal reveals, however, that even at high excitation energies the final states can be a way more complex, incorporating several Bloch waves with different out-of-plane momenta. Such multiband final states manifest themselves as a complex structure and excessive broadening of the spectral peaks from 3D electron states. We analyse the origins of this phenomenon, and trace it to other materials such as Si and GaN. Our findings are essential for accurate determination of the 3D band structure over a wide range of materials and excitation energies in the ARPES experiment.

Hybridization between $f$ electrons and conduction bands ($c$-$f$ hybridization) is a driving force for many unusual phenomena. To provide insight into it, systematic studies of CeCoIn$_5$ heavy fermion superconductor have been performed by angle-resolved photoemission spectroscopy (ARPES) in a large angular range at temperature of $T=6$ K. The used photon energy of 122 eV corresponds to Ce $4d$-$4f$ resonance. Calculations carried out with relativistic multiple scattering Korringa-Kohn-Rostoker method and one-step model of photoemission yielded realistic simulation of the ARPES spectra indicating that Ce-In surface termination prevails. Surface states, which have been identified in the calculations, contribute significantly to the spectra. Effects of the hybridization strongly depend on wave vector. They include a dispersion of heavy electrons and bands gaining $f$-electron character when approaching Fermi energy. We have also observed a considerable variation of $f$-electron spectral weight at $E_F$, which is normally determined by both matrix element effects and wave vector dependent $c$-$f$ hybridization. Fermi surface scans covering a few Brillouin zones revealed large matrix element effects. A symmetrization of experimental Fermi surface, which reduces matrix element contribution, yielded a specific variation of $4f$-electron enhanced spectral intensity at $E_F$ around $\bar{\Gamma}$ and $\bar{M}$ points. Tight-binding approximation calculations for Ce-In plane provided the same universal distribution of $4f$-electron density for a range of values of the parameters used in the model., Comment: 15 pages, 9 figures

In the last decade rare-earth hexaborides have been investigated for their fundamental importance in condensed matter physics, and for their applications in advanced technological fields. Among these compounds, LaB$_6$ has a special place, being a traditional d-band metal without additional f- bands. In this paper we investigate the bulk electronic structure of LaB$_6$ using hard x-ray photoemission spectroscopy, measuring both core-level and angle-resolved valence-band spectra. By comparing La 3d core level spectra to cluster model calculations, we identify well-screened peak residing at a lower binding energy compared to the main poorly-screened peak; the relative intensity between these peaks depends on how strong the hybridization is between La and B atoms. We show that the recoil effect, negligible in the soft x-ray regime, becomes prominent at higher kinetic energies for lighter elements, such as boron, but is still negligible for heavy elements, such as lanthanum. In addition, we report the bulk-like band structure of LaB$_6$ determined by hard x-ray angle-resolved photoemission spectroscopy (HARPES). We interpret HARPES experimental results by the free-electron final-state calculations and by the more precise one-step photoemission theory including matrix element and phonon excitation effects. In addition, we consider the nature and the magnitude of phonon excitations in HARPES experimental data measured at different temperatures and excitation energies. We demonstrate that one step theory of photoemission and HARPES experiments provide, at present, the only approach capable of probing true bulk-like electronic band structure of rare-earth hexaborides and strongly correlated materials., Comment: Total 26 pages, Total 11 figures

We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high quality ordered pristine and SrTiO3:Ni$_{x}$ films with x=0.06 and 0.12 were prepared by pulsed laser deposition. Electronic band structure calculations for the ground state, as well as one-step model photoemission calculations, which were obtained by means of the Korringa-Khon-Rostoker Greens's function method, predicted the formation of localised $3d$-impurity bands in the band gap of SrTiO$_{3}$ close to the valence band maxima. The measured valence bands at the resonance Ni2p excitation and band dispersion confirm these findings., Comment: 12 pages and 7 figures

The problem of effective use of Phasor Measurement Units (PMUs) to enhance power systems awareness and security is a topic of key interest. The central question to solve is how to use this new measurements to reconstruct the state of the system. In this paper we provide the first solution to the problem of (globally convergent) state estimation of multimachine power systems equipped with PMUs and described by the fourth order flux-decay model. This work is a significant extension of our previous result, where this problem was solved for the simpler third order model, for which it is possible to recover algebraically part of the unknown state. Unfortunately, this property is lost in the more accurate fourth order model, significantly complicating the state observation task. The design of the observer relies on two recent developments proposed by the authors, a parameter estimation based approach to the problem of state estimation and the use of the Dynamic Regressor Extension and Mixing (DREM) technique to estimate these parameters. The use of DREM allows us to overcome the problem of lack of persistent excitation that stymies the application of standard parameter estimation designs. Simulation results illustrate the latter fact and show the improved performance of the proposed observer with respect to a locally stable gradient-descent based observer., Comment: 10 pages, 10 Figures

$\alpha$-GeTe(111) is a non-centrosymmetric ferroelectric material, for which a strong spin-orbit interaction gives rise to giant Rashba split states in the bulk and at the surface. The detailed dispersions of the surface states inside the bulk band gap remains an open question because they are located in the unoccupied part of the electronic structure, making them inaccessible to static angle-resolved photoemission spectroscopy. We show that this difficulty can be overcome via in-situ potassium doping of the surface, leading to a rigid shift of 80 meV of the surface states into the occupied states. Thus, we resolve in great detail their dispersion and highlight their crossing at the $\bar{\Gamma}$ point, which, in comparison with density functional theory calculations, definitively confirms the Rashba mechanism., Comment: 8 pages, 6 figures

We propose a novel decentralized mixed algebraic and dynamic state observation method for multi-machine power systems with unknown inputs and equipped with Phasor Measurement Units (PMUs). More specifically, we prove that for the third-order flux-decay model of a synchronous generator, the local PMU measurements give enough information to reconstruct algebraically the load angle and the quadrature-axis internal voltage. Due to the algebraic structure a high numerical efficiency is achieved, which makes the method applicable to large scale power systems. Also, we prove that the relative shaft speed can be globally estimated combining a classical Immersion and Invariance (I&I) observer with - the recently introduced - dynamic regressor and mixing (DREM) parameter estimator. This adaptive observer ensures global convergence under weak excitation assumptions that are verified in applications. The proposed method does not require the measurement of exogenous inputs signals such as the field voltage and the mechanical torque nor the knowledge of mechanical subsystem parameters., Comment: 10 pages, 11 figures

The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi growth on the A face (In-terminated InAs) is epitaxial, contrary to that on the B face (As- terminated InAs) that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a $\approx 10$~BL deposit on the A face is identical to that of bulk Bi, while more than $\approx 30$ BL are needed for the B face. Both bulk and surface states are well accounted for by fully relativistic ab initio spin-resolved photoemission calculations., Comment: 7 pages, 7 figures