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5. A comparison between Rad-Hard Standard Float Zone (FZ) and Magnetic Czochralski (MCz) Silicon Diodes in Radiotherapy Electron Beams Dosimetry.

Author

dos Santos, T. C., Gonçalves, J. A. C., Vasques, M. M., Tobias, C. C. B., Neves-Junior, W. F. P., Haddad, C. M. K., and Harkonen, J.

Subjects
COMPARATIVE studies, SILICON diodes, ELECTRON beams, RADIATION dosimetry, MAGNETIC materials, RADIOTHERAPY, FORCE & energy, SENSITIVITY analysis
Abstract

In this work we present the preliminary results obtained with a comparison between rad-hard FZ and MCz silicon diodes as on-line clinical electron beams dosimeters. The dynamic current response of the diodes under irradiation with electron beams within the energy range of 6 MeV up to 21 MeV was investigated. For all energies, data show good instantaneous repeatability of the diodes, characterized by coefficients of variation better than 2.8% and 2.5% to FZ and MCz, respectively. The dose-response curves of both diodes are quite linear with charge sensitivities better than 0.55 μC/Gy and 0.68 μC/Gy to FZ and MCz devices. These results show that MCz diode is more sensitive than FZ diode. [ABSTRACT FROM AUTHOR]

Published
2011
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