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The acoustic response of defect-based acoustic interferometer-like designs, known as Coupled Resonator Acoustic Waveguides (CRAWs), in two-dimensional phononic crystals (PnCs) is reported. The PnC is composed of steel cylinders arranged in a square lattice within a water matrix with defects induced by selectively removing cylinders to create Mach-Zehnder-like (MZ) defect-based interferometers. Two defect-based acoustic interferometers of MZ-type are fabricated, one with arms oriented horizontally and another one with arms oriented diagonally, and their transmission features are experimentally characterized using ultrasonic spectroscopy. The experimental data are compared with finite element method (FEM) simulations and with tight-binding (TB) calculations in which each defect is treated as a resonator coupled to its neighboring ones. Significantly, the results exhibit excellent agreement indicating the reliability of the proposed approach. This comprehensive match is of paramount importance for accurately predicting and optimizing resonant modes supported by defect arrays, thus enabling the tailoring of phononic structures and defect-based waveguides to meet specific requirements. This successful implementation of FEM and TB calculations in investigating CRAWs systems within phononic crystals paves the way for designing advanced acoustic devices with desired functionalities for various practical applications, demonstrating the application of solid-state electronics principles to underwater acoustic devices description.

A reconfigurable phononic crystal (PnC) is proposed where elastic properties can be modulated by rotation of asymmetric solid scatterers immersed in water. The scatterers are metallic rods with cross-section of 120{\deg} circular sector. Orientation of each rod is independently controlled by an external electric motor that allows continuous variation of the local scattering parameters and dispersion of sound in the entire crystal. Due to asymmetry of the scatterers, the crystal band structure possesses highly anisotropic bandgaps. Synchronous rotation of all the scatterers by a definite angle changes regime of reflection to regime of transmission and vice versa. The same mechanically tunable structure functions as a gradient index medium by incremental, angular reorientation of rods along both row and column, and, subsequently, can serve as a tunable acoustic lens, an acoustic beam splitter, and finally an acoustic beam steerer.

Through the positive role of alkali halides in realizing large area growth of transition metal-di-chalcogenide layers has been validated, the film-growth kinematics has not yet been fully established. This work presents a systematic analysis of the MoS$_2$ morphology for films grown under various pre-treatment conditions of the substrate with sodium chloride (NaCl). At an optimum NaCl concentration, the domain size of the monolayer increased by almost two orders of magnitude compared to alkali-free growth of MoS$_2$. The results show an inverse relationship between fractal dimension and areal coverage of the substrate with monolayers and multi-layers, respectively. Using the Fact-Sage software, the role of NaCl in determining the partial pressures of Mo- and S-based compounds in gaseous phase at the growth temperature is elucidated. The presence of alkali salts is shown to affect the domain size and film morphology by affecting the Mo and S partial pressures. Compared to alkali-free synthesis under the same growth conditions, MoS$_2$ film growth assisted by NaCl results in $\approx$ 81$\%$ of the substrate covered by monolayers. Under ideal growth conditions, at an optimum NaCl concentration, nucleation was suppressed, and domains enlarged, resulting in large area growth of MoS$_2$ monolayers. The monolayers were found to be free of unintentional doping with alkali metal and halogen atoms and exhibit high crystallinity and excellent opto-electronic quality.

We report that chemical vapor deposition (CVD) grown bilayer and thicker-layered MoS2 are structurally and optically stable under ambient conditions, in comparison to CVD-grown monolayer MoS2 and other transition metal dichalcogenides (TMDs) that have been reported to degrade under the same conditions, hindering their many potential applications. We present atomic force microscopy (AFM), and Raman and photoluminescence (PL) spectroscopy measurements of as-grown and preheated multilayer MoS2 after exposure to ambient conditions for periods of up to 2 years. The AFM images show that, under ambient conditions, as-grown and preheated bilayer and thicker-layered MoS2 films do not exhibit the growth of dendrites that is characteristic of monolayer degradation. Dendrites are observed to stop at the monolayer-bilayer boundary. Raman and PL spectra of the aged bilayer and thicker-layered films are comparable to those of as-grown films. The greater stability of bilayers and thicker layers supports a previously reported mechanism for monolayer degradation involving F\"orster resonance energy transfer. Our results show that bilayer and thicker-layered TMDs are promising materials for applications requiring ambient stability.

Ultrasound is a continually developing technology that is broadly used for fast, non-destructive mechanical property detection of hard and soft materials in applications ranging from manufacturing to biomedical. In this study, a novel monostatic longitudinal ultrasonic pulsing elastography imaging method is introduced. Existing elastography methods require an acoustic radiational or dynamic compressive externally applied force to determine the effective bulk modulus or density. This new, passive M-mode imaging technique does not require an external stress, and can be effectively utilized for both soft and hard materials. Strain map imaging and shear wave elastography are two current categories of M-mode imaging that show both relative and absolute elasticity information. The new technique is applied to hard materials and soft material tissue phantoms for demonstrating effective bulk modulus and effective density mapping. As compared to standard techniques, the effective parameters fall within 10% of standard characterization methods for both hard and soft materials. As neither the standard A-mode imaging technique nor the presented technique require an external applied force, the techniques are applied to composite heterostructures and the findings presented for comparison. The presented passive M-mode technique is found to have enhanced resolution over standard A-mode modalities.

Semiconductor heterostructures based on layered two-dimensional transition metal dichalcogenides (TMD) interfaced to gallium nitride (GaN) are excellent material systems to realize broadband light emitters and absorbers. The surface properties of the polar semiconductor, such as GaN are dominated by interface phonons, thus the optical properties of the vertical heterostructure depend strongly on the interface exciton-phonon coupling. The origin and activation of different Raman modes in the heterostructure due to coupling between interfacial phonons and optically generated carriers in a monolayer MoS2-GaN (0001) heterostructure was observed. This coupling strongly influences the non-equilibrium absorption properties of MoS2 and the emission properties of both semiconductors. Density functional theory (DFT) calculations were performed to study the band alignment of the interface, which revealed a type-I heterostructure. The optical excitation with interband transition in MoS2 at K-point strongly modulates the C excitonic band in MoS2. The overlap of absorption and emission bands of GaN with the absorption bands of MoS2 induces the energy and charge transfer across the interface with an optical excitation at {\Gamma}-point. A strong modulation of the excitonic absorption states is observed in MoS2 on GaN substrate with transient optical pump-probe spectroscopy. The interaction of carriers with phonons and defect states leads to the enhanced and blue shifted emission in MoS2 on GaN substrate. Our results demonstrate the relevance of interface coupling between phonons and carriers for the development of optical and electronic applications.

The near-field interaction due to a strong electromagnetic field induced by resonant localized plasmons can result in a strong coupling of excitonic states or formation of hybrid exciton-plasmon modes in quantum confined structures. This coupling can be strengthed by designing a system with its vibronic states resonant to the energy of the driving field induced by the localized plasmon excitation. Silver nanoislands nucleated on molybdenum disulfide (MoS2) is an ideal platform for such interaction. The influence of localized plasmons (LSP) on the formation and dissociation of excitons due to resonant and off-resonant optical excitation of carriers to excitonic states is studied using ultrafast optical spectroscopy. The local field due to the Ag nanoparticles (Ag-NP) enhances the magnitude of the Raman modes in MoS2 in the presence of resonant excitation. An ultrashort pulsed optical excitation at 2.3 eV resonantly excites the LSP modes and the optical near-field resonantly drive the phonon modes, which leads to a coherent coupling of the A and B excitons in MoS2 with the plasmon modes. The resonant excitation of the LSP modes modulate the optical absorption of the probe field. The resonant excitation of C exciton due to an excitation source at 3.0 eV, which is off-resonant to the LSP mode increases the electrostatic screening in the presence of excess carriers from Ag NPs. It results in a faster dissociation of optically generated C excitons into free carriers that eventually increase the A and B exciton population. A 3-level density matrix theory in the presence of dressed vibronic states induced by a localized near-field optical driving source is applied to describe the coherent interaction process in the hybrid nano-plasmonic system., Comment: 19 pages, 10 figures, 51 references

A two-dimensional phononic crystal with asymmetric scatterers is used for the study of Anderson localization of sound along one-dimensional disorder produced by random orientation of metallic rods. An exponentially weak transmission of ultrasound is demonstrated for the waves propagating along the direction of disorder. In the perpendicular direction where the scatterers are ordered, sound propagates as extended wave. The {\it PT}-symmetry of the system is broken by dissipative viscous losses and asymmetric shape of the scatterers. Nonreciprocal transmission of sound is observed for both, ordered and disordered, directions. In the localized regime, the nonreciprocity is manifested through different values of localization length for sound propagating in the opposite directions.

We demonstrate the modification of coherent zone-folded longitudinal acoustic phonons (ZFLAPs) oscillations in InGaN/GaN multiple quantum wells by the inclusion of metal nanoparticles (Au and Ag) via self-assembled inverted hexagonal pits. Blueshift and redshift have been observed in photoluminescence spectra due to the effect of electrostatic charge of metal nanoparticles (NPs). A change in periodicity of ZFLAPs oscillations were demonstrated due to the metal NPs inserted in the material system., Comment: This paper has been withdrawn by the author

Subpicosecond wavelength non-degenerate differential transmission (DT) was used to observe the carrier relaxation mechanism in GaN based quantum well (QW) with and without metal nanoparticles (MNPs) in it. The spontaneous emission dominates the stimulated emission for above the GaN band edge excitation energy. We observed long decay times for Au-embedded sample and short decay times for Ag-embedded sample with respect to reference sample., Comment: This paper has been withdrawn by the author

The coherent folded longitudinal acoustic phonons (FLAPs) in gold nanoparticles (NPs) imbedded InGaN/GaN sample have been studied using degenerate pump-probe technique. When the FLAPs are generated within the multiple quantum wells, the zone-center FLAPs extending from multiple quantum wells is detected in the GaN and sapphire substrate. Up to five phonon modes are clearly observed and they are well explained by the back and forth propagation of the signal phonon wave packet in the InGaN/GaN quantum wells. The results are consistent with similar measurements to GaAs/AlAs superlattices., Comment: This paper has been withdrawn by the author

This paper has been withdrawn keeping in view of publication elsewhere with some appropriate modifications., Comment: This paper has been withdrawn

Study of light emitting silicon fabricated by ion implantation., Comment: G-COE Conference - Kyoto 2008 abstract

We have demonstrated surface-plasmon induced change in spontaneous emission rate in the ultraviolet regime at ~ 375-380 nm, using AlN/GaN quantum dots (QD). Using time-resolved and continuous-wave photoluminescence measurements, the recombination rate in AlN/GaN QD is shown to be enhanced when spontaneous emission is resonantly coupled to a metal-surface plasmon mode. The exciton recombination process via Ag-surface plasmon modes is observed to be as much as 3-7 times faster than in normal QD spontaneous emission and depends strongly on the emission wavelength and silver thickness., Comment: 11 pages, 4 figures

Using time-resolved photoluminescence measurements, the recombination rate in an In$_{0.18}$Ga$_{0.82}$N/GaN quantum well (QW) is shown to be greatly enhanced when spontaneous emission is resonantly coupled to a silver surface plasmon. The rate of enhanced spontaneous emission into the surface plasmon was as much as 92 times faster than normal QW spontaneous emission. A calculation, based on Fermi's golden rule, reveals the enhancement is very sensitive to silver thickness and indicates even greater enhancements are possible for QWs placed closer to the surface metal coating., Comment: Submitted to Phys. Rev. B