1. Steering of Sub-GeV positrons by ultra-thin bent Silicon crystal
- Author
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Garattini, M., Annucci, D., Gianotti, P., Liedl, A., Long, E., Mancini, M., Mazzolari, A., Napolitano, T., Negrello, R., Raggi, M., Romagnoni, M., and Valente, P.
- Subjects
Physics - Accelerator Physics - Abstract
At the Beam Test Facility of the DA{\Phi}NE accelerator complex at the Laboratori Nazionali di Frascati of INFN, 450 MeV positrons have bean deflected, for the first time at sub-GeV energy, using the Planar Channeling process in a bent silicon crystal. The deflection angle obtained is beyond 1 mrad with an high efficiency of deflection. This interesting result finds several applications for manipulation of this kind of beams, in particular for slow extraction from leptons circular accelerators like DA{\Phi}NE. In this work the experimental apparatus, the measurement procedure and the experimental results are reported.
- Published
- 2024