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The 2D semiconducting transition metal dichalcogenides (e.g., WS2) host strong coupling between various degrees of freedom leading to potential applications in next-generation device applications including optoelectronics. Such applications are strongly influenced by defects which can control both the optical and electronic properties of the material. We demonstrate the possibility to tailor the defect-related electronic states and the lattice dynamics properties of WS2 in their heterostructures with h-BN which host a strong interlayer coupling between the charge carriers in the WS2 layer and the phonons of h-BN. This coupling is observed to induce modifications to the interlayer phonons (manifested by their modified Raman-activity) and to the charge carrier mobilities in the WS2 layer (which results in creation of mid-gap energy states associated with many-body quasiparticle states). Our study also includes a detailed characterization of the defects through Raman measurements revealing an A_1g-type nature with differential resonance behavior for the modes that are related to defect scattering with respect to the other normal phonon modes of WS2., Comment: 22 pages, 5 figures, Supplemental material

Multifunctional properties in quantum systems require the interaction between different degrees of freedom. As such, spin-phonon coupling emerges as an ideal mechanism to tune multiferroicity, magnetism, and magnetoelectric response. In this letter, we demonstrate and explain, based on theoretical and experimental analyses, an unusual manifestation of spin-phonon coupling, i.e., prevention of a ferroelastic structural transition, and locking of high-temperature R-3m phase in a magnetically frustrated perovskite-like oxide Ba2NiTeO6. We present Ba2NiTeO6 as a prototype example among its family where long-range antiferromagnetic structure couples with a low-frequency Eg mode (at 55 cm-1) that exhibits a large anharmonicity. Our findings establish that spin-phonon coupling clearly suppresses the phonon anharmonicity preventing the structural phase transition from the R-3m to the C2/m phase in Ba2NiTeO6.

Tailoring the quantum many-body interactions in layered materials through appropriate heterostructure engineering can result in emergent properties that are absent in the constituent materials thus promising potential future applications. In this article, we have demonstrated controlling the otherwise robust magnetic properties of transition metal phosphorus trisulphides (Mn/Fe/NiPS3) in their heterostructures with Weyl semimetallic MoTe2 which can be attributed to the Dzyaloshinskii Moriya (DM) interactions at the interface of the two different layered materials. While the DM interaction is known to scale with the strength of the spin-orbit coupling (SOC), we also demonstrate here that the effect of DM interaction strongly varies with the spin orientation/dimensionality of the magnetic layer and the low-energy electronic density of state of the spin-orbit coupled layer. The observations are further supported by a series of experiments on heterostructures with a variety of substrates/underlayers hosting variable SOC and electronic density of states., Comment: 35 pages, 5 figures (main text), supporting information

NiPS3 is a Van der Waals antiferromagnet that has been found to display spin-charge and spin-phonon coupling in its antiferromagnetically ordered state below TN = 155 K. Here, we study high-quality crystals of site-diluted Ni1-xZnxPS3 (0 < x < 0.2) using temperature-dependent specific heat and Raman spectroscopy probes. The site dilution suppresses the antiferromagnetic ordering in accordance with the mean-field prediction. In NiPS3, we show that the phonon mode P2 (176 cm-1) associated with Ni vibrations show a distinct asymmetry due to the Fano resonance, which persists only in the paramagnetic phase, disappearing below T_N = 155 K. This was further supported by temperature-dependent Raman data on an 8% Zn-doped crystal (T_N = 135 K) where Fano resonance similarly van in the magnetically ordered phase. This is contrary to the behaviour of the Raman mode P9 (570 cm-1), which shows a Fano resonance at low temperatures below T_N due to its coupling with the two-magnon continuum. We show that the Fano resonance of P2 arises from its coupling with an electronic continuum that weakens considerably upon cooling to low temperatures. In the doped crystals, the Fano coupling is found to enhance with Zn-doping. These observations suggest the presence of strong electron-phonon coupling in the paramagnetic phase of NiPS3 due to charge density fluctuations associated with the negative charge transfer state of Ni.

Liquid-phase exfoliation of two-dimensional materials is very attractive for large-scale applications. Although used extensively, isolating MoS2 layers (<10) with high efficiency is reported to be extremely difficult. Further, the importance of soaking has not yet been studied, and the surfactants' role in stabilizing MoS2 nanosheets is poorly understood1. Herein, we report a novel approach to exfoliating large quantities of MoS2 via high-pressure (HP) liquid-phase exfoliation (LPE) in deionized (DI) water. 4 to 7 layers of MoS2 nanosheets were obtained from 60 days-soaked samples and they were found to be stable in solvents for periods of up to six months. Studies on the effect of three surfactants, namely sodium dodecyl benzenesulfonate (SDBS), sodium cholate (SC), and tetra-butyl ammonium bromide (TBAB), indicate that exfoliation of MoS2 nanosheets in SDBS is highly efficient than the other two surfactants. The estimated yield reaches up to 7.25%, with a nanosheet concentration of 1.45 mg/ml, which is one of the highest ever reported. Our studies also suggest that the nanosheets' concentration and the lateral size depend on exfoliation cycles, applied pressure and surfactant concentration. Hydrogen evolution reaction (HER) and ion-transport study show that the nanosheets prepared by our method are stable in an acidic medium and free from surfactants. A high hydrogen evolution rate of 30.13 mmol g-1 h-1 was estimated under ambient laboratory conditions., Comment: 12 pages, 4 figures

The interplay between different degrees of freedom such as charge, spin, orbital, and lattice has received a great deal of interest due to its potential to engineer materials properties and their functionalities for device applications. In this work, we have explored the crystallographic phase diagram of Ba1-xSrxMnO3 and studied the correlation between two degrees of freedom, namely phonons and spins using magnetization and inelastic light scattering measurements. The system undergoes a series of crystallographic phase transitions 2H -> 9R -> 4H as a function of doping (Sr) as observed by X-ray diffraction measurements. Investigation of their temperature-dependent magnetization reveals a para- to antiferro-magnetic transition for all the compositions. An Eg phonon in the 9R phase and an E1g phonon in the 4H phase involving Mn or O-vibrations, show anomalous temperature-dependence in the antiferromagnetic phase arising due to spin-phonon coupling.

Atomically thin monolayers of graphene show excellent electronic properties which have led to a great deal of research on their use in nanoscale devices. However, heat management of such nanoscale devices is essential in order to improve their performance. Graphene supported on hexagonal boron nitride (h-BN) substrate has been reported to show enhanced (opto)electronic and thermal properties as compared to extensively used SiO2/Si supported graphene. Motivated by this, we have performed temperature- and power-dependent Raman Spectroscopic measurements on four different types of (hetero)structures: (a) h-BN (BN), (b) graphene (Gr), (c) h-BN on graphene (BG), and (d) graphene encapsulated by h-BN layers from both top and bottom (BGB), all supported on SiO2/Si substrate. We have estimated the values of thermal conductivity (\k{appa}) and interfacial thermal conductance per unit area (g) of these four (hetero)structures to demonstrate the structure-activity (thermal) relationship. We report here the values of \k{appa} and g for h-BN supported on SiO2/Si as 280.0 +-58.0 Wm-1K-1 and 25.6+-0.4 MWm-2K-1, respectively. More importantly, we have observed an improvement in both thermal conductivity and interfacial thermal conductance per unit area in the heterostructures which ensures a better heat dissipation in devices. The \k{appa} and g of h-BN encapsulated graphene on SiO2/Si (BGB) sample was observed to be 850.0+-81.0 Wm-1K-1 and 105+-1 MWm-2K-1, respectively, as opposed to 600.0+-93.0 Wm-1K-1 and 1.15+-0.40 MWm-2K-1, respectively, for graphene on SiO2/Si substrate. Therefore, we propose that for graphene-based nanoscale devices, encapsulation with h-BN is a better alternative to address heat management issues.