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The manufacturing of devices from methylammonium-based perovskites asks for reliable and scalable processing. As solvent engineering is not the option of choice to obtain homogeneous layers on large areas, our idea is to ‘upgrade’ a non-perfect pristine layer by recrystallization in a thermal imprint step (called ‘planar hot pressing’) and thus to reduce the demands on the layer formation itself. Recently, imprint has proven both its capability to improve the crystal size of perovskite layers and its usability for large area manufacturing. We start with methylammonium lead bromide layers obtained from a conventional solution-based process. Acetate is used as a competitive lead source; even under perfect conditions the resulting perovskite layer then will contain side-products due to layer formation besides the desired perovskite. Based on the physical properties of the materials involved we discuss the impact of the temperature on the status of the layer both during soft-bake and during thermal imprint. By using a special imprint technique called ‘hot loading’ we are able to visualize the upgrade of the layer with time, namely a growth of the grains and an accumulation of the side-products at the grain boundaries. By means of a subsequent vacuum exposition we reveal the presence of non-perovskite components with a simple inspection of the morphology of the layer; all experiments are supported by X-ray and electron diffraction measurements. Besides degradation, we discuss recrystallization and propose post-crystallization to explain the experimental results. This physical approach towards perovskite layers with large grains by post-processing is a key step towards large-area preparation of high-quality layers for device manufacturing.

The preparation of wide-gap CsPbCl3 thin films from solution is impeded by the poor concomitant solubility of the precursor salts PbCl2 and CsCl. In the present study, we prepared superlattices of PbCl2 and CsCl by thermal evaporation. The superlattice shows an intense photoluminescence at 413 nm with a narrow line width of 10 nm (FWHM), which agrees with reports of CsPbCl3 single crystals. Most notably, the resulting layer structures support amplified spontaneous emission (ASE) in the deep blue spectral region at 427 nm (width 2.2 nm) under pulsed optical excitation (355 nm, 300 ps) above a threshold energy density of 190 μJ/cm2 at room temperature (RT). This is the first report of CsPbCl3 thin films showing ASE at RT.

We measure both nonlinear absorption and nonlinear refraction in a ${{\rm CH}_3}{{\rm NH}_3}{{\rm PbBr}_3}$CH

Thermal management in devices like solar cells, light-emitting diodes, and lasers based on hybrid halide perovskite thin films is expected to be of paramount importance for optimal performance and reliability. As of yet, experimental data of thermal properties of non-iodine-based hybrid halide perovskites is very scarce. Here the thermal conductivity of methylammonium lead halide perovskite (CH3NH3PbX3 X= I, Br, and Cl) single crystals and thin films is analyzed by scanning near-field thermal microscopy. The thermal conductivity of CH3NH3PbX3 single crystals with X= I, Br, and Cl is found to be 0.34 ± 0.12, 0.44 ± 0.08, and 0.50 ± 0.05 W/(mK) at room temperature, respectively. Strikingly, similar thermal conductivities are determined for the corresponding thin-film samples. The thermal conductivity of MAPbI3 in the cubic phase (T > 55 °C) increases to (1.1 ± 0.1) W/(mK). In addition, the temperature dependence of the thermal conductivities and of thermal expansion coefficients of MAPbI3 around the phase t...

We measure nonlinear refraction and absorption of a CH3NH3PbBr3 single crystal with the Z-scan technique. Our results provide the first reference of the intrinsic, ultrafast nonlinear refractive index in the metal halide perovskite material class.

Cesium lead halide perovskites are of interest for light-emitting diodes and lasers. So far, thin-films of CsPbX3 have typically afforded very low photoluminescence quantum yields (PL-QY < 20%) and amplified spontaneous emission (ASE) only at cryogenic temperatures, as defect related nonradiative recombination dominated at room temperature (RT). There is a current belief that, for efficient light emission from lead halide perovskites at RT, the charge carriers/excitons need to be confined on the nanometer scale, like in CsPbX3 nanoparticles (NPs). Here, thin films of cesium lead bromide, which show a high PL-QY of 68% and low-threshold ASE at RT, are presented. As-deposited layers are recrystallized by thermal imprint, which results in continuous films (100% coverage of the substrate), composed of large crystals with micrometer lateral extension. Using these layers, the first cesium lead bromide thin-film distributed feedback and vertical cavity surface emitting lasers with ultralow threshold at RT that do not rely on the use of NPs are demonstrated. It is foreseen that these results will have a broader impact beyond perovskite lasers and will advise a revision of the paradigm that efficient light emission from CsPbX3 perovskites can only be achieved with NPs.

We measure both nonlinear absorption and nonlinear refraction in a C H 3 N H 3 P b B r 3 single crystal using the Z-scan technique with femtosecond laser pulses. At 1000 nm, we obtain values of 5.2 cm/GW and + 9.5 ⋅ 10 − 14 c m 2 / W for nonlinear absorption and nonlinear refraction, respectively. The sign and magnitude of the observed refractive nonlinearity are reproduced well by the two-band model. Our results suggest that the large nonlinear refractive index measured in perovskite nanostructures cannot be explained by an intrinsically high bound-electronic nonlinear refractive index in this emerging material class but is possibly caused by free carriers or quantum confinement effects.

Halide perovskites are currently of interest for a variety of optoelectronic applications. While, typical wet-chemical preparation techniques afford relatively rough polycrystalline layers, we have recently demonstrated that thermal imprint is a powerful post-deposition processing tool that affords extremely smooth perovskite thin-films with crystals that extend over tens of microns laterally.[1,2] A comparative study of optical, morphological and thermal properties (e.g. thermal conductivity) reveals some striking similarity of pressed MAPbX3 thin-films and their single crystalline analogues.[3] More recently, we successfully used thermal imprint also for entirely inorganic halide perovskite materials, such as CsPbBr3. While as-deposited CsPbBr3 layers are typically discontinuous and rough with a large number of pinholes, thermal imprint at relatively low temperature and pressure (150°C, 100 bar) will be shown to turn them into dense, smooth and pinhole-free thin films, which show substantially enhanced luminescence quantum yield and in contrast to pristine CsPbBr3 layers even enable room-temperature amplified spontaneous emission (ASE). Perovskite thin films patterned by thermal nanoimprint with photonic resonator structures will be shown to afford hybrid and entirely inorganic distributed feedback lasers, with ultra-low lasing thresholds.[2,4] [1] A. Mayer et al. J. Vac. Sci. & Techol. B 2017, 35, 06G803. [2] N. Pourdavoud et al. Adv. Mater. Technol. 2018, 3, 1700253. [3] R. Heiderhoff et al. J. Phys. Chem. C 2017, 121, 28306. [4] N. Pourdavoud et al. Adv. Mater. 2017, 29, 1605003.

The electronic structure of a large sample set of CH3 NH3 PbI3 -based perovskites is studied. Combined investigations by UV/X-ray photoelectron spectroscopy and X-ray diffraction reveal that interstitials present in the film lead to changes in the occupied density of states close to the valence band, which in turn influences the performance of solar cells. Changes in elemental composition tune the ionization energy of the perovskite film by almost 1 eV without introducing significant amounts of gap states.

The recently re-discovered class of organometal-halide perovskites hold great promise for solar cells, LEDs and lasers.[1] Today, their potential has not been fully unlocked partially because of the lack of suitable nano-patterning techniques, which are mandatory to create resonator structures, waveguides etc. with a maximum level of precision directly into perovskite layers. Their chemical and thermal instability prevents the use of established wet-chemical patterning techniques.[2] In contrast to conventional inorganic semiconductors, crystal binding in these perovskites includes significant contributions of van der Waals interactions among the halide atoms and Hydrogen bonding.[3] The formation enthalpy per unit cell is only about 0.1eV in MAPbI3.[4] Here, we take advantage of the “soft-matter properties” of organo-metal halide perovskites and demonstrate that photonic nano-structures can be prepared by direct thermal nano-imprint lithography in MAPbI3 and MAPbBr3 at relatively low temperatures (

Perovskite solar cells (PSCs) suffer from decomposition of the active material in the presence of moisture or heat. In addition, the corrosion of metal electrodes due to halide species needs to be overcome.[1,2] Here, we introduce ALD-grown tin oxide (SnOx) as impermeable electron extraction layer (EEL), which affords air resilient and temperature stable MAPbI3 PSCs. Being conductive, SnOx is positioned between the metal electrode and the perovskite. Its outstanding permeation barrier properties protect the perovskite against ingress of moisture or migrating metal atoms, while simultaneously the metal electrode is protected against leaking halide compounds.[2] Therefore, SnOx is also excellently suited to sandwich and protect ultra-thin metal layers (Ag or Cu) as cost efficient Indium-free semitransparent electrodes (SnOx/metal/SnOx) in PSCs. Using photoelectron spectroscopy, we unravel the formation of a PbI2 interfacial layer between a SnOx EEL and the perovskite. The resulting interface dipole between SnOx and the PbI2 depends on the choice of oxidant for ALD (water, ozone, oxygen plasma). SnOx grown by using ozone affords hysteresis-free devices with a stable efficiency of 16.3% and a remarkably high open circuit voltage of 1.17 V.[3] Finally, we fabricated semitransparent PSCs with efficiency >11% (Tvis = 17%) and an astonishing stability > 4500h under ambient conditions (>50% RH) or elevated temperatures (60°C).[4] [1] Y. Kato et al., Adv. Mater. Interf. 2015, 2, 150019 [2] K. Brinkmann et al., Nat. Commun. 8, 13938 [3] T. Hu et al. Adv. Mat. (submitted) [4] J. Zhao et al. Adv. Energ. Mat. (in press)

The local thermal conductivity, thermal diffusivity, and volumetric heat capacity of cesium lead chloride perovskite thin films are mapped simultaneously and with highest spatial resolution by a scanning near-field thermal microscope. Both, the 3D phase (CsPbCl3) and the 0D phase (Cs4PbCl6) are investigated. For CsPbCl3 thin films the variation of the thermal properties across the phase transitions in the range from room-temperature to 65 °C are analyzed. While the thermal conductivity at room temperature is ultra-low, a significant increase of the thermal conductivity is found for the cubic phase of CsPbCl3 (T > 46 °C). While only slight variations in the thermal conductivity are detectable for transitions from the monoclinic to the orthorhombic to the tetragonal phase, thermal diffusivity and volumetric heat capacity measurements are extremely sensitive to the amount of heat involved in the respective transition. It is shown that upon transition to the cubic phase of CsPbCl3 thin films, the relative increase of the volumetric heat capacity is significantly higher than that of the thermal conductivity. Thus, the thermal diffusivity in the cubic phase becomes notably lower in comparison to that of the respective phase at room temperature. An increase of the volumetric heat capacity had been theoretically predicted earlier but could not be confirmed in previous experimental studies. The findings of our thermal analysis are of great general importance for fundamental material research and for the thermal design of thin-film devices based on CsPbCl3 perovskites.

The area of thin-film photovoltaics has been overwhelmed by organometal halide perovskites. Unfortunately, serious stability concerns arise with perovskite solar cells. For example, methyl-ammonium lead iodide is known to decompose in the presence of water and, more severely, even under inert conditions at elevated temperatures. Here, we demonstrate inverted perovskite solar cells, in which the decomposition of the perovskite is significantly mitigated even at elevated temperatures. Specifically, we introduce a bilayered electron-extraction interlayer consisting of aluminium-doped zinc oxide and tin oxide. We evidence tin oxide grown by atomic layer deposition does form an outstandingly dense gas permeation barrier that effectively hinders the ingress of moisture towards the perovskite and—more importantly—it prevents the egress of decomposition products of the perovskite. Thereby, the overall decomposition of the perovskite is significantly suppressed, leading to an outstanding device stability., The stability issue of perovskite-based solar cells is in part due to electrode corrosion. Here, Brinkmann et al. develop an impermeable bilayered electron-extraction layer between the active layer and the electrode, suppressing decomposition of the perovskite and preventing corrosion from the inside.

Corrosive precursors used for the preparation of organic–inorganic hybrid perovskite photoactive layers prevent the application of ultrathin metal layers as semitransparent bottom electrodes in perovskite solar cells (PVSCs). This study introduces tin-oxide (SnOx) grown by atomic layer deposition (ALD), whose outstanding permeation barrier properties enable the design of an indium-tin-oxide (ITO)-free semitransparent bottom electrode (SnOx/Ag or Cu/SnOx), in which the metal is efficiently protected against corrosion. Simultaneously, SnOx functions as an electron extraction layer. We unravel the spontaneous formation of a PbI2 interfacial layer between SnOx and the CH3NH3PbI3 perovskite. An interface dipole between SnOx and this PbI2 layer is found, which depends on the oxidant (water, ozone, or oxygen plasma) used for the ALD growth of SnOx. An electron extraction barrier between perovskite and PbI2 is identified, which is the lowest in devices based on SnOx grown with ozone. The resulting PVSCs are hysteresis-free with a stable power conversion efficiency (PCE) of 15.3% and a remarkably high open circuit voltage of 1.17 V. The ITO-free analogues still achieve a high PCE of 11%.

Organic solid state lasers (OSLs) based on semiconducting polymers or small molecules have seen some significant progress over the past decade. Highly efficient organic gain materials combined with high-Q resonator geometries (distributed feedback (DFB), VCSEL, etc.) have enabled OSLs, optically pumped by simple inorganic laser diodes or even LEDs. However, some fundamental goals remain to be reached, like continuous wave (cw) operation and injection lasing. I will address various loss mechanisms related to accumulated triplet excitons or long-lived polarons that in combination with the particular photo-physics of organic gain media state the dominant road-blocks on the way to reach these goals. I will discuss the recent progress in fundamental understanding of these loss processes, which now provides a solid basis for modelling, e.g. of laser dynamics. Avenues to mitigate these fundamental loss mechanisms, e.g. by alternative materials will be presented. In this regard, a class of gain materials based on organo-lead halide perovskites re-entered the scene as light emitters, recently. Enjoying a tremendous lot of attention as active material for solution processed solar cells with a 20+% efficiency, they have recently unveiled their exciting photo-physics for lasing applications. Optically pumped lasing in these materials has been achieved. I will discuss some of the unique properties that render this class of materials a promising candidate to overcome some of the limitations of “classical” organic gain media.

Photonic nanostructures are created in organo-metal halide perovskites by thermal nanoimprint lithography at a temperature of 100 °C. The imprinted layers are significantly smoothened compared to the initially rough, polycrystalline layers and the impact of surface defects is substantially mitigated upon imprint. As a case study, 2D photonic crystals are shown to afford lasing with ultralow lasing thresholds at room temperature.

This is the peer reviewed version of the following article: Pourdavoud, N., Mayer, A., Buchmüller, M., Brinkmann, K., Häger, T., Hu, T. , Heiderhoff, R., Shutsko, I., Görrn, P., Chen, Y., Scheer, H.‐C., Riedl, T.: Distributed Feedback Lasers Based on MAPbBr3. Advanced Materials Technologies 2018, 3(4), 1700253 which has been published in final form at https://doi.org/10.1002/admt.201700253. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions., Advanced Materials Technologies 2018, 3(4), 170025

Perovskites have high potential for future electronic devices, in particular, in the field of opto-electronics. However, the electronic and optic properties of these materials highly depend on the morphology and thus on the preparation; in particular, highly crystalline layers with large crystals and without pinholes are required. Here, nanoimprint is used to improve the morphology of such layers in a thermal imprint step. Two types of material are investigated, MAPbI3 and MAPbBr3, with MA being methylammonium, CH3NH3+. The perovskite layers are prepared from solution, and the crystal size of the domains is substantially increased by imprinting them at temperatures of 100–150 °C. Although imprint is performed under atmospheric conditions which, in general, enhances the degradation, the stamp that covers the layer under elevated temperature is able to protect the perovskite largely from decomposition. Comparing imprinting experiments with pure annealing at a similar temperature and time proves this. Furthe...

Semitransparent perovskite solar cells (PSCs) are of interest for application in tandem solar cells and building-integrated photovoltaics. Unfortunately, several perovskites decompose when exposed to moisture or elevated temperatures. Concomitantly, metal electrodes can be degraded by the corrosive decomposition products of the perovskite. This is even the more problematic for semitransparent PSCs, in which the semitransparent top electrode is based on ultrathin metal films. Here, we demonstrate outstandingly robust PSCs with semitransparent top electrodes, where an ultrathin Ag layer is sandwiched between SnOx grown by low-temperature atomic layer deposition. The SnOx forms an electrically conductive permeation barrier, which protects both the perovskite and the ultrathin silver electrode against the detrimental impact of moisture. At the same time, the SnOx cladding layer underneath the ultra-thin Ag layer shields the metal against corrosive halide compounds leaking out of the perovskite. Our semitransparent PSCs show an efficiency higher than 11% along with about 70% average transmittance in the near-infrared region (λ > 800 nm) and an average transmittance of 29% for λ = 400–900 nm. The devices reveal an astonishing stability over more than 4500 hours regardless if they are exposed to ambient atmosphere or to elevated temperatures.

Body resistances (R B ) of body-contacted (BC) partially-depleted (PD) SOI MOSFETs are adjusted by a proper layout structure. The transition in the output conductance frequency response due to the finite body resistance was eliminated. Transition-free (TF) curves for 45 nm SOI MOSFET at various biasing points were extracted. The TF concept was used to design a 2.4 GHz cascode low noise amplifier. Mixed-mode transient device and circuit simulation was performed to obtain the output signal spectrum. Simulation results of TF SOI LNA showed 6 dB and 9 dB reduction in HD3 and THD at V in =0.1 mV, respectively, comparing with the conventional BC SOI circuit. Third order intercept point (IP3) was improved by 3 dB at V in =0.1 mV in TF SOI LNA. Simulation results confirmed the linearity advantage of RF SOI circuit based on the transition-free operating regime.