132 results on '"Nayak, Kaushik"'
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2. Enhancement of the optical gain in GaAs nanocylinders for nanophotonic applications
3. Immunity to random fluctuations induced by interface trap variability in Si gate-all-around n-nanowire field-effect transistor devices
4. Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors
5. Impact of slice thickness on reproducibility of CT radiomic features of lung tumors
6. Silicon-Germanium Heterojunction Bipolar Transistor DC and AC Analysis Operating under Cryogenic Temperature
7. Contact Analysis of Elemental Transition Metal Electrodes for Complementary 2D-FET Applications Using MoS2 and WSe2
8. Enhancement of the optical gain in GaAs nanocylinders for nanophotonic applications.
9. Contact Analysis of Elemental Transition Metal Electrodes for Complementary 2D-FET Applications Using MoS2 and WSe2
10. TCAD Analysis of O-Terminated Diamond m-i-p+ Diode Characteristics Dependencies on Surface States CNL and Metal-Induced Gap States
11. TCAD Analysis of O-Terminated Diamond m-i-p+ Diode Characteristics Dependencies on Surface States CNL and Metal-Induced Gap States
12. Electrode Orientation Dependent Transition Metal—(MoS₂; WS₂) Contact Analysis for 2D Material Based FET Applications
13. Superior Interface Trap Variability Immunity of Horizontally Stacked Si Nanosheet FET in Sub-3-nm Technology Node
14. Electro-Thermal Performance Boosting in Stacked Si Gate-all-Around Nanosheet FET With Engineered Source/Drain Contacts
15. Superior Interface Trap Variability Immunity of Horizontally Stacked Si Nanosheet FET in Sub-3-nm Technology Node
16. Electrode Orientation Dependent Transition Metal—(MoS₂; WS₂) Contact Analysis for 2D Material Based FET Applications
17. TCAD-Based Investigation of Statistical Variability Immunity in U-Channel FDSOI n-MOSFET for Sub-7-nm Technology
18. Electro-Thermal Performance Boosting in Stacked Si Gate-All-Around Nanosheet FET With Engineered Source/Drain Contacts
19. Contact Analysis of Elemental Transition Metal Electrodes for Complementary 2D-FET Applications Using MoS 2 and WSe 2.
20. TCAD-Based Investigation of Statistical Variability Immunity in U-Channel FDSOI n-MOSFET for Sub-7-nm Technology
21. A Diffusion Tensor Imaging study to compare normative fractional anisotropy values at the lumbar spine with patients suffering from low back pain
22. Device Electrostatics and High Temperature Operation of Oxygen Terminated Boron Doped Diamond MOS Capacitor and MOSFET
23. Superior Work Function Variability Performance of Horizontally Stacked Nanosheet FETs for Sub-7-nm Technology and Beyond
24. Atomistic Modeling to Engineer Ohmic Contacts between Monolayer MoS2 and Transition Metals
25. Device SHEs in the Presence of Non-equilibrium Channel Heat Transport in SOI and SOD FinFETs with Technology Scaling
26. THz Device Design for SiGe HBT under Sub-room Temperature to Cryogenic Conditions
27. Device Electrostatics and High Temperature Operation of Oxygen Terminated Boron Doped Diamond MOS Capacitor and MOSFET
28. Ambient Temperature-Induced Device Self-Heating Effects on Multi-Fin Si CMOS Logic Circuit Performance in N-14 to N-7 Scaled Technologies
29. Hetero-Interfacial Thermal Resistance Effects on Device Performance of Stacked Gate-All-Around Nanosheet FET
30. Device SHEs in the Presence of Non-equilibrium Channel Heat Transport in SOI and SOD FinFETs with Technology Scaling
31. THz Device Design for SiGe HBT under Sub-room Temperature to Cryogenic Conditions
32. Atomistic Modeling to Engineer Ohmic Contacts between Monolayer MoS2 and Transition Metals
33. Hetero-Interfacial Thermal Resistance Effects on Device Performance of Stacked Gate-All-Around Nanosheet FET
34. TCAD Analysis of O-Terminated Diamond m-i-p + Diode Characteristics Dependencies on Surface States CNL and Metal-Induced Gap States.
35. Superior Work Function Variability Performance of Horizontally Stacked Nanosheet FETs for Sub-7-nm Technology and Beyond
36. Ambient Temperature-Induced Device Self-Heating Effects on Multi-Fin Si CMOS Logic Circuit Performance in N-14 to N-7 Scaled Technologies
37. Device Electrostatics and High Temperature Operation of Oxygen Terminated Boron Doped Diamond MOS Capacitor and MOSFET
38. Impact of Fin Line Edge Roughness and Metal Gate Granularity on Variability of 10-nm Node SOI n-FinFET
39. Improved Electro-Thermal Performance in FinFETs using SOD Technology for 7nm node High Performance Logic Devices
40. Optimizing the Gain in Semiconductor Nanostructures for All-dielectric Active Metamaterial Applications
41. Impact of Phonon Boundary Scattering on Self-heating Effects in Stacked Si Nano-sheet FET in sub-7nm Logic Technologies
42. Impact of Fin Line Edge Roughness and Metal Gate Granularity on Variability of 10-nm Node SOI n-FinFET
43. Numerical investigation on wave transmission characteristics of perforated and non-perforated pile breakwater
44. Modeling and Simulation of Negative Capacitance MOSFETs
45. Ambient Temperature-Induced Device Self-Heating Effects on Multi-Fin Si n-FinFET Performance
46. Occupational Stress among Radiographers Working in Tertiary Care Hospital in Udupi and Mangalore.
47. Ambient Temperature-Induced Device Self-Heating Effects on Multi-Fin Si n-FinFET Performance
48. Effect of Metal Gate Granularity Induced Random Fluctuations on Si Gate-All-Around Nanowire MOSFET 6-T SRAM Cell Stability
49. Effect of Metal Gate Granularity Induced Random Fluctuations on Si Gate-All-Around Nanowire MOSFET 6-T SRAM Cell Stability
50. Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors
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