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Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range, which are incompatible with long-distance fiber communication and unfavorable for imaging in biological tissues. Here, we report the experimental observation of a new color center that emits in the telecom O-band, which we observe in silicon-doped bulk single crystal diamonds and microdiamonds. Combining absorption and photoluminescence measurements, we identify a zero-phonon line at 1221 nm and phonon replicas separated by 42 meV. Using transient absorption spectroscopy, we measure an excited state lifetime of around 270 ps and observe a long-lived baseline that may arise from intersystem crossing to another spin manifold.

Neutral silicon vacancy centers (SiV0) in diamond are promising candidates for quantum networks because of their long spin coherence times and stable, narrow optical transitions. However, stabilizing SiV0 requires high purity, boron doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage chemical processing and annealing in a hydrogen environment to realize reversible and highly stable charge state tuning in undoped diamond. The resulting SiV0 centers display optically detected magnetic resonance and bulk-like optical properties. Controlling the charge state tuning via surface termination offers a route for scalable technologies based on SiV0 centers, as well as charge state engineering of other defects.

Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stamping process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors ($Q$) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with $Q$ of 4100, we observe a three-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of $C = 2$. These results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.

The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different photo-luminescence rates. Here, we use confocal fluorescence microscopy to activate and probe charge interconversion between all three charge states under ambient conditions. In particular, we witness the formation of SiV0 via the two-step capture of diffusing, photo-generated holes, a process we expose both through direct SiV0 fluorescence measurements at low temperatures and confocal microscopy observations in the presence of externally applied electric fields. Further, we show that continuous red illumination induces the converse process, first transforming SiV0 into SiV-, then into SiV2-. Our results shed light on the charge dynamics of SiV and promise opportunities for nanoscale sensing and quantum information processing.

Nitrogen vacancy (NV) centers in diamond are atom-scale defects with long spin coherence times that can be used to sense magnetic fields with high sensitivity and spatial resolution. Typically, the magnetic field projection at a single point is measured by averaging many sequential measurements with a single NV center, or the magnetic field distribution is reconstructed by taking a spatial average over an ensemble of many NV centers. In averaging over many single-NV center experiments, both techniques discard information. Here we propose and implement a new sensing modality, whereby two or more NV centers are measured simultaneously, and we extract temporal and spatial correlations in their signals that would otherwise be inaccessible. We analytically derive the measurable two-point correlator in the presence of environmental noise, quantum projection noise, and readout noise. We show that optimizing the readout noise is critical for measuring correlations, and we experimentally demonstrate measurements of correlated applied noise using spin-to-charge readout of two NV centers. We also implement a spectral reconstruction protocol for disentangling local and nonlocal noise sources, and demonstrate that independent control of two NV centers can be used to measure the temporal structure of correlations. Our covariance magnetometry scheme has numerous applications in studying spatiotemporal structure factors and dynamics, and opens a new frontier in nanoscale sensing.

Emerging quantum technologies require precise control over quantum systems of increasing complexity. Defects in diamond, particularly the negatively charged nitrogen-vacancy (NV) center, are a promising platform with the potential to enable technologies ranging from ultra-sensitive nanoscale quantum sensors, to quantum repeaters for long distance quantum networks, to simulators of complex dynamical processes in many-body quantum systems, to scalable quantum computers. While these advances are due in large part to the distinct material properties of diamond, the uniqueness of this material also presents difficulties, and there is a growing need for novel materials science techniques for characterization, growth, defect control, and fabrication dedicated to realizing quantum applications with diamond. In this review we identify and discuss the major materials science challenges and opportunities associated with diamond quantum technologies.

Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C-band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of Er3+ ions are limited by currently available host materials, motivating the development of new Er3+-containing materials. Here, we demonstrate the use of ion implantation to efficiently screen prospective host candidates, and show that disorder introduced by ion implantation can be mitigated through post-implantation thermal processing to achieve inhomogeneous linewidths comparable to bulk linewidths in as-grown samples. We present optical spectroscopy data for each host material, which allows us to determine the level structure of each site, allowing us to compare the environments of Er3+ introduced via implantation and via doping during growth. We demonstrate that implantation can generate a range of local environments for Er3+, including those observed in bulk-doped materials, and that the populations of these sites can be controlled with thermal processing.

We have constructed a unique cluster tool for surface preparation and spectroscopy in ultrahigh vacuum combined with cryogenic, confocal microscopy of single nitrogen vacancy centers in diamond. We modify the diamond surface chemistry and investigate shallow nitrogen vacancy center properties in situ.

Color centers in diamond are widely explored for applications in quantum sensing, computing, and networking. Their optical, spin, and charge properties have extensively been studied, while their interactions with itinerant carriers are relatively unexplored. Here, we show that NV centers situated 10 ± 5 nm of the diamond surface can be converted to the neutral charge state via hole capture. By measuring the hole capture rate, we extract the capture cross section, which is suppressed by proximity to the diamond surface. The distance dependence is consistent with a carrier diffusion model, indicating that the itinerant carrier lifetime can be long, even at the diamond surface. Measuring dynamics of near-surface NV centers offers a tool for characterizing the diamond surface and investigating charge transport in diamond devices.

Combatting noise on the platform The potential of quantum computers to solve problems that are intractable for classical computers has driven advances in hardware fabrication. In practice, the main challenge in realizing quantum computers is that general, many-particle quantum states are highly sensitive to noise, which inevitably causes errors in quantum algorithms. Some noise sources are inherent to the current materials platforms. de Leon et al. review some of the materials challenges for five platforms for quantum computers and propose directions for their solution. Science , this issue p. eabb2823

Neutral silicon vacancy (SiV^{0}) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been elusive due to poor understanding of the excited state fine structure and limited off-resonant spin polarization. Here we report the realization of optically detected magnetic resonance and coherent control of SiV^{0} centers at cryogenic temperatures, enabled by efficient optical spin polarization via previously unreported higher-lying excited states. We assign these states as bound exciton states using group theory and density functional theory. These bound exciton states enable new control schemes for SiV^{0} as well as other emerging defect systems.

Atom-like defects in solid-state hosts are promising candidates for the development of quantum information systems, but despite their importance, the host substrate/defect combinations currently under study have almost exclusively been found serendipitously. Here we systematically evaluate the suitability of host materials by applying a combined four-stage data mining and manual screening process to all entries in the Materials Project database, with literature-based experimental confirmation of band gap values. We identify 580 viable host substrates for quantum defect introduction and use in quantum information systems. While this constitutes a significant increase in the number of known and potentially viable material systems, it nonetheless represents a significant (99.54%) reduction from the total number of known inorganic phases, and the application of additional selection criteria for specific applications will reduce their number even further. The screening principles outlined may easily be applied to previously unrealized phases and other technologically important materials systems., Currently under consideration at npj Computational Materials

In recent years semiconducting qubits have undergone a remarkable evolution, making great strides in overcoming decoherence as well as in prospects for scalability, and have become one of the leading contenders for the development of large-scale quantum circuits. In this Review we describe the current state of the art in semiconductor charge and spin qubits based on gate-controlled semiconductor quantum dots, shallow dopants, and color centers in wide band gap materials. We frame the relative strengths of the different semiconductor qubit implementations in the context of quantum simulations, computing, sensing and networks. By highlighting the status and future perspectives of the basic types of semiconductor qubits, this Review aims to serve as a technical introduction for non-specialists as well as a forward-looking reference for scientists intending to work in this field., Review article, feedback welcome, 27 pages, 5 figures

In search of the right diamond defect Certain defects in diamond are among the most promising physical implementations of qubits, the building blocks of quantum computers. However, identifying a defect with balanced properties is tricky: Nitrogen vacancy centers have a long lifetime but comparatively poor optical properties, whereas negatively charged silicon vacancy centers have the opposite characteristics. Rose et al. used careful materials engineering to stabilize the neutral charge state of silicon vacancy centers and found that they combine long coherence times with excellent optical properties. Science , this issue p. 60

Er3+ ions in crystals are promising for quantum networks. We demonstrate ion implantation of Er3+ into TiO2, a potential low-noise host material, with narrow optical and spin linewidths and high implantation yield.

Atomic and atomlike defects in the solid state are widely explored for quantum computers, networks, and sensors. Rare earth ions are an attractive class of atomic defects that feature narrow spin and optical transitions that are isolated from the host crystal, allowing incorporation into a wide range of materials. However, the realization of long electronic spin coherence times is hampered by magnetic noise from abundant nuclear spins in the most widely studied host crystals. Here, we demonstrate that Er

The nitrogen vacancy (NV) center in diamond exhibits spin-dependent fluorescence and long spin coherence times under ambient conditions, enabling applications in quantum information processing and sensing. NV centers near the surface can have strong interactions with external materials and spins, enabling new forms of nanoscale spectroscopy. However, NV spin coherence degrades within 100 nanometers of the surface, suggesting that diamond surfaces are plagued with ubiquitous defects. Prior work on characterizing near-surface noise has primarily relied on using NV centers themselves as probes; while this has the advantage of exquisite sensitivity, it provides only indirect information about the origin of the noise. Here we demonstrate that surface spectroscopy methods and single spin measurements can be used as complementary diagnostics to understand sources of noise. We find that surface morphology is crucial for realizing reproducible chemical termination, and use these insights to achieve a highly ordered, oxygen-terminated surface with suppressed noise. We observe NV centers within 10 nm of the surface with coherence times extended by an order of magnitude.

Atomic and atom-like defects in the solid-state are widely explored for quantum computers, networks and sensors. Rare earth ions are an attractive class of atomic defects that feature narrow spin and optical transitions that are isolated from the host crystal, allowing incorporation into a wide range of materials. However, the realization of long electronic spin coherence times is hampered by magnetic noise from abundant nuclear spins in the most widely studied host crystals. Here, we demonstrate that Er$^{3+}$ ions can be introduced via ion implantation into TiO$_2$, a host crystal that has not been studied extensively for rare earth ions and has a low natural abundance of nuclear spins. We observe efficient incorporation of the implanted Er$^{3+}$ into the Ti$^{4+}$ site (40% yield), and measure narrow inhomogeneous spin and optical linewidths (20 and 460 MHz, respectively) that are comparable to bulk-doped crystalline hosts for Er$^{3+}$. This work demonstrates that ion implantation is a viable path to studying rare earth ions in new hosts, and is a significant step towards realizing individually addressed rare earth ions with long spin coherence times for quantum technologies.

Integrating atomic quantum memories based on color centers in diamond with on-chip photonic devices would enable entanglement distribution over long distances. However, efforts towards integration have been challenging because color centers can be highly sensitive to their environment, and their properties degrade in nanofabricated structures. Here, we describe a heterogeneously integrated, on-chip, III-V diamond platform designed for neutral silicon vacancy (SiV0) centers in diamond that circumvents the need for etching the diamond substrate. Through evanescent coupling to SiV0 centers near the surface of diamond, the platform will enable Purcell enhancement of SiV0 emission and efficient frequency conversion to the telecommunication C-band. The proposed structures can be realized with readily available fabrication techniques.

Color centers in diamond are attractive candidates for implementing single-atom quantum memories in a quantum network. Recently, we reported a color center that exhibits favorable optical properties and long spin coherence times. The integration of this color center, SiV0, into nanophotonic circuits could enable efficient entanglement distribution over long distances.

Metamaterials are artificial optical media composed of sub-wavelength metallic and dielectric building blocks that feature optical phenomena not present in naturally occurring materials. Although they can serve as the basis for unique optical devices that mould the flow of light in unconventional ways, three-dimensional metamaterials suffer from extreme propagation losses. Two-dimensional metamaterials (metasurfaces) such as hyperbolic metasurfaces for propagating surface plasmon polaritons have the potential to alleviate this problem. Because the surface plasmon polaritons are guided at a metal-dielectric interface (rather than passing through metallic components), these hyperbolic metasurfaces have been predicted to suffer much lower propagation loss while still exhibiting optical phenomena akin to those in three-dimensional metamaterials. Moreover, because of their planar nature, these devices enable the construction of integrated metamaterial circuits as well as easy coupling with other optoelectronic elements. Here we report the experimental realization of a visible-frequency hyperbolic metasurface using single-crystal silver nanostructures defined by lithographic and etching techniques. The resulting devices display the characteristic properties of metamaterials, such as negative refraction and diffraction-free propagation, with device performance greatly exceeding those of previous demonstrations. Moreover, hyperbolic metasurfaces exhibit strong, dispersion-dependent spin-orbit coupling, enabling polarization- and wavelength-dependent routeing of surface plasmon polaritons and two-dimensional chiral optical components. These results open the door to realizing integrated optical meta-circuits, with wide-ranging applications in areas from imaging and sensing to quantum optics and quantum information science.

Defect-based color centers in wide-bandgap crystalline solids are actively being explored for quantum information science, sensing, and imaging. Unfortunately, the luminescent properties of these emitters are frequently degraded by blinking and photobleaching that arise from poorly passivated host crystal surfaces. Here, a new method for stabilizing the photoluminescence and charge state of color centers based on epitaxial growth of an inorganic passivation layer is presented. Specifically, carbon antisite-vacancy pairs (CAV centers) in 4H-SiC, which serve as single-photon emitters at visible wavelengths, are used as a model system to demonstrate the power of this inorganic passivation scheme. Analysis of CAV centers with scanning confocal microscopy indicates a dramatic improvement in photostability and an enhancement in emission after growth of an epitaxial AlN passivation layer. Permanent, spatially selective control of the defect charge state can also be achieved by exploiting the mismatch in spontaneous polarization at the AlN/SiC interface. These results demonstrate that epitaxial inorganic passivation of defect-based quantum emitters provides a new method for enhancing photostability, emission, and charge state stability of these color centers.

We investigate the neutral charge state of the interstitial silicon split-vacancy defect in diamond for use in quantum communication applications using pulsed electron spin resonance at X-Band magnetic fields (∼3500 G) and confocal microscopy.

Color centers in diamond are a promising platform for quantum communication, as they can serve as solid state quantum memories with efficient optical transitions. Much recent attention has focused on the negatively charged NV center in diamond, which has a spin triplet ground state electronic configuration that can be measured and initialized optically, exhibits long spin coherence times at room temperature, and has narrow, spin-conserving optical transitions. However, the NV center exhibits a large static and dynamic inhomogeneous linewidth, and over 97% of its emission is in a broad, incoherent phonon side band, severely limiting scalability. Alternatively, the negatively charged SiV center exhibits excellent optical properties, with 70% of its emission in the zero phonon line and a narrow inhomogeneous linewidth. However, SiV− suffers from short electron spin coherence times, limited by an orbital relaxation rate (T 1 ) of around 40 ns at 5 K.

A variety of nanoscale photonic, mechanical, electronic, and optoelectronic devices require scalable thin film fabrication. Typically, the device layer is defined by thin film deposition on a substrate of a different material, and optical or electrical isolation is provided by the material properties of the substrate or by removal of the substrate. For a number of materials this planar approach is not feasible, and new fabrication techniques are required to realize complex nanoscale devices. Here, we report a three-dimensional fabrication technique based on anisotropic plasma etching at an oblique angle to the sample surface. As a proof of concept, this angled-etching methodology is used to fabricate free-standing nanoscale components in bulk single-crystal diamond, including nanobeam mechanical resonators, optical waveguides, and photonic crystal and microdisk cavities. Potential applications of the fabricated prototypes range from classical and quantum photonic devices to nanomechanical-based sensors and actuators.

Large-scale quantum networks will require efficient interfaces between photons and stationary quantum bits. Nitrogen vacancy (NV) centers in diamond are a promising candidate for quantum information processing because they are optically addressable, have spin degrees of freedom with long coherence times, and as solid-state entities, can be integrated into nanophotonic devices. An enabling feature of the NV center is its zero-phonon line (ZPL), which acts as an atom-like cycling transition that can be used for coherent optical manipulation and read-out of the spin. However, the ZPL only accounts for 3–5% of the total emission, and previously demonstrated methods of producing high densities of NV centers yield unstable ZPLs.

We investigated the effect of substrate-induced strain on the metal-insulator transition (MIT) in single-crystalline VO(2) nanobeams. A simple nanobeam-substrate adhesion leads to uniaxial strain along the nanobeam length because of the nanobeam's unique morphology. The strain changes the relative stability of the metal (M) and insulator (I) phases and leads to spontaneous formation of periodic, alternating M-I domain patterns during the MIT. The spatial periodicity of the M-I domains can be modified by changing the nanobeam thickness and the Young's modulus of the substrate.

Fullerenes have been detected in carbonaceous chondrite meteorites and in breccia samples from meteorite impact craters, but questions have been raised about contradictory results from similar samples and the sensitivities and accuracies of different analytical methods. We analyzed samples from three impact craters and detected C60 in samples from several locations; we also observed differences in the detection capabilities of various analytical techniques used in the search for fullerenes. The presence of C60 in rocks from the Onaping Formation of the Sudbury impact crater was confirmed. Low levels of C60 were also detected for the first time in samples from the Gardnos (Norway) and Ries (Germany) impact structures. We detected C60 in these samples using surface-enhanced laser desorption/ ionization (SELDI), but the related technique of microprobe laser-desorption, laser-ionization mass spectrometry (μL2MS) did not observe C60 above detection limits. We attribute the absence of μL2MS signal to aggregate formation caused by phthalic acid esters, which appear to easily contaminate samples either during storage or demineralization in plastic containers. The μL2MS technique is incapable of detecting aggregated C60, but aggregation does not suppress detection in SELDI. Phthalate-induced aggregation did, however, enhance SELDI detection of C60 in some cases, and we suggest that this enhancement may help explain previously reported differences in C60 detection from natural samples between laser desorption mass spectrometry (LDMS, a technique analogous to SELDI that has detected fullerenes in meteorite and impact breccia samples) and high-pressure liquid chromatography (HPLC). This work highlights the effects of phthalates and other indigenous compounds or contaminants on certain mass spectrometric techniques and lends support to the idea that several complementary analytical methods should be employed to investigate complex natural samples.

Using microprobe laser-desorption, laser-ionization mass spectrometry (L 2 MS), we measured the distributions of alkylated and unalkylated polycyclic aromatic hydrocarbons (PAHs) in the free organic material of 20 carbonaceous chondrites. These meteorites represent a variety of meteorite classes and alteration histories, including CI, CK, CM, CO, CR, CV, and Tagish Lake. This work provides information on free organic compounds that is complementary to studies of the structure and composition of meteoritic macromolecular content. For the nine CM2 meteorites analyzed, we observe that higher relative abundances of alkylated PAHs correlate with more intense aqueous activity. We attribute this correlation to the differences in solubility and volatility between unalkylated and alkylated PAHs. Naphthalene and its alkylation series are more susceptible to the effects of aqueous exposure than the less-soluble PAH phenanthrene and its alkylated derivatives. These observations are consistent with the possibility of chromatographic separations on the meteorite parent bodies. We identify six CM2 meteorites with similar PAH distributions that may represent the original, unaltered organic composition of the parent body. Increased metamorphic intensity reduces the abundance of all PAHs. The thermally metamorphosed CK chondrites had no detectable levels of typical meteoritic PAHs. This observation might be explained either by a loss of PAHs caused by volatilization or by a significantly different organic content of the CK parent body. Copyright © 2005 Elsevier Ltd

Microprobe laser desorption/laser ionization mass spectrometry (microL(2)MS) is a sensitive and selective technique that has proven useful in the qualitative and semiquantitative detection of trace organic compounds, particularly polycyclic aromatic hydrocarbons (PAHs). Recent efforts have focused on developing microL(2)MS as a quantitative method, often by measuring the ratio of signal strength of an analyte to an internal standard. Here, we present evidence of factors that affect these ratios and thus create uncertainty and irreproducibility in quantification. The power and wavelength of the desorption laser, the delay time between the desorption and ionization steps, the power of the ionization laser, and the ionization laser alignment are all shown to change PAH ratios, in some cases by up to a factor of 24. Although changes in the desorption laser parameters and the delay time cause the largest effects, the ionization laser power and alignment are the most difficult parameters to control and thus provide the most practical limitations for quantitative microL(2)MS. Variation in ratios is seen in both synthetic poly(vinyl chloride) membranes and in "real-life" samples of Murchison meteorite powder. Ratios between similar PAHs vary less than those between PAHs that differ greatly in mass and structure. This finding indicates that multiple internal standards may be needed for quantification of samples containing diverse PAHs.

We report a new approach for realizing a flexible photonic crystal (PC) cavity that enables wide-range tuning of its resonance frequency. Our PC cavity consists of a regular array of silicon nanowires embedded in a polydimethylsiloxane (PDMS) matrix and exhibits a cavity resonance in the telecommunication band that can be reversibly tuned over 60 nm via mechanical stretching-a record for two-dimensional (2D) PC structures. These mechanically reconfigurable devices could find potential applications in integrated photonics, sensing in biological systems, and smart materials.

We propose and demonstrate a new approach for achieving strong light-matter interactions with quantum emitters. Our approach makes use of a plasmon resonator composed of defect-free, highly crystalline silver nanowires surrounded by patterned dielectric distributed Bragg reflectors (DBRs). These resonators have an effective mode volume (Veff) two orders of magnitude below the diffraction limit and quality factor (Q) approaching 100, enabling enhancement of spontaneous emission rates by a factor exceeding 75 at the cavity resonance. We also show that these resonators can be used to convert a broadband quantum emitter to a narrowband single-photon source with color-selective emission enhancement.

A bulk nanomachining technique to realize suspended photonic structures in diamond is presented. The developed fabrication methodology, employs oxygen plasma etching and yields free-standing nanobeam waveguides and photonic crystal cavities.

We discuss recent experiments involving a new, broadband approach for engineering photon-emitter interactions via subwavelength confinement of guided optical fields in metallic nanowires [1–2]. The tight confinement of guided excitations in these nanostructures, known as surface plasmons [3–5], results in large interactions between single photons and single optical emitters without the use of a cavity, which can further be manipulated using quantum optical techniques.

Quantum metrology enables some of the most precise measurements. In the life sciences, diamond-based quantum sensing has enabled a new class of biophysical sensors and diagnostic devices that are being investigated as a platform for cancer screening and ultra-sensitive immunoassays. However, a broader application in the life sciences based on nanoscale nuclear magnetic resonance spectroscopy has been hampered by the need to interface highly sensitive quantum bit (qubit) sensors with their biological targets. Here, we demonstrate a new approach that combines quantum engineering with single-molecule biophysics to immobilize individual proteins and DNA molecules on the surface of a bulk diamond crystal that hosts coherent nitrogen vacancy qubit sensors. Our thin (sub-5 nm) functionalization architecture provides precise control over protein adsorption density and results in near-surface qubit coherence approaching 100 {\mu}s. The developed architecture remains chemically stable under physiological conditions for over five days, making our technique compatible with most biophysical and biomedical applications.

We present an experimental demonstration of an optical switch operating in the quantum regime, consisting of a single trapped atom near a nanoscale photonic crystal cavity.

Many advanced applications of diamond materials are now being limited by unknown surface defects, including in the fields of high power/frequency electronics and quantum computing and quantum sensing. Of acute interest to diamond researchers worldwide is the loss of quantum coherence in near-surface nitrogen-vacancy (NV) centers and the generation of associated magnetic noise at the diamond surface. Here for the first time is presented the observation of a family of primal diamond surface defects, which is suggested as the leading cause of band-bending and Fermi-pinning phenomena in diamond devices. A combination of density functional theory and synchrotron-based X-ray absorption spectroscopy is used to show that these defects introduce low-lying electronic trap states. The effect of these states is modeled on band-bending into the diamond bulk and it is shown that the properties of the important NV defect centers are affected by these defects. Due to the paramount importance of near-surface NV center properties in a growing number of fields, the density of these defects is further quantified at the surface of a variety of differently-treated device surfaces, consistent with best-practice processing techniques in the literature. The identification and characterization of these defects has wide-ranging implications for diamond devices across many fields.