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PbS colloidal quantum dots (CQDs) are versatile building blocks for bottom-up fabrication of various optoelectronic devices. The transport properties of thin films of this class of materials depend on the size of the CQDs, their surface ligands, and stoichiometry. The most common synthetic methods yield PbS CQDs with an excess of Pb atoms, which induces n-type transport properties in CQD films. In this work, we developed a new synthesis, which offers S-rich PbS CQDs. Thanks to their sufficient colloidal stability in nonpolar solvents, we established a protocol for the integration of these CQDs into thin field-effect transistors and found strong hole-dominated transport with a hole mobility of about 1 × 10–2 cm2/Vs. Moreover, we were able to enhance the electron mobility for almost two orders of magnitude while keeping the hole mobility nearly the same. This approach allows us to obtain reliably p-doped PbS CQDs, which can be used for the fabrication of various electronic and optoelectronic devices., Chemistry of Materials, 33 (1), ISSN:0897-4756

Phase-transfer exchange of pristine organic ligands for inorganic ones is essential for the integration of colloidal quantum dots (CQDs) in optoelectronic devices. This method results in a colloidal dispersion (ink) which can be directly deposited by various solution-processable techniques to fabricate conductive films. For PbS CQDs capped with methylammonium lead iodide ligands (MAPbI3), the most commonly employed solvent is butylamine, which enables only a short-term (hours) colloidal stability and thus brings concerns on the possibility of manufacturing CQD devices on a large scale in a reproducible manner. In this work, we studied the stability of alternative inks in two highly polar solvents which impart long-term colloidal stability of CQDs: propylene carbonate (PC) and 2,6-difluoropyridine (DFP). The aging and the loss of the ink’s stability were monitored with optical, structural, and transport measurements. With these solvents, PbS CQDs capped with MAPbI3 ligands retain colloidal stability for more than 20 months, both in dilute and concentrated dispersions. After 17 months of ink storage, transistors with a maximum linear mobility for electrons of 8.5 × 10–3 cm2/V s are fabricated; this value is 17% of the one obtained with fresh solutions. Our results show that both PC- and DFP-based PbS CQD inks offer the needed shelf life to allow for the development of a CQD device technology. ISSN:1944-8244 ISSN:1944-8252

Nowadays, the best lead sulfide (PbS) colloidal quantum dot (CQD) solar cells are primarily demonstrated in the n-p structure, while the p-n structure is significantly less developed. This technological gap between the n-p and p-n structures is much more distinct than in cases of other solution-processable photovoltaic technologies like perovskites and polymers. Here, we propose a scalable fabrication strategy for efficient PbS QD solar cells with p-n structure. An industrially suited blade-coating technique has been used to deposit both n-type and p-type QD layers. The obtained solar cells demonstrated power conversion efficiency of 9%, thus, commensurate to the record device efficiency with this architecture fabricated with a non-scalable technique. The availability of both p-n and n-p structures fabricated from scalable methods may promote the future integration of the PbS QDs into tandem devices together with other solution-processable materials to exploit the most prominent benefits of the PbS QDs, such as infrared absorption., Cell Reports, 2 (12), ISSN:2666-3864, ISSN:2211-1247

Nowadays, the best PbS colloidal quantum dots solar cells are primarily demonstrated in the n-p structure, while the p-n structure is significantly less developed. This technological gap between the n-p and p-n structures is much more distinct than in cases of other solution-processable photovoltaic technologies like perovskites and polymers. It may hinder the future implementation of the PbS colloidal quantum dots in conjunction with other materials to exploit the most prominent benefits of the PbS colloidal quantum dots, such as infrared absorption. Also, to become commercially relevant, scalable fabrication is as essential as the device’s power conversion efficiency for any photovoltaic technology. PbS colloidal quantum dots solar cell in the p-n structure has never been fabricated by scalable methods so far.Here we propose a scalable fabrication strategy for efficient PbS colloidal quantum dots solar cell with p-n structure. An industrially suited blade-coating technique has been used to deposit both n-type and p-type quantum dots layers in the p-n structure without compromising the device performance. The obtained PbS QD solar cells demonstrated power conversion efficiency of 9%, thus, commensurate to the previous record device efficiency with this architecture fabricated with a non-scalable technique. We believe the availability of both p-n and n-p structures fabricated from scalable methods is highly important to integrate colloidal quantum dots solar cells into tandem devices together with other solution processable materials.

Capping colloidal quantum dots (CQDs) with atomic ligands is a powerful approach to tune their properties and improve the charge carrier transport in CQD solids. Efficient passivation of the CQD surface, which can be achieved with halide ligands, is crucial for application in optoelectronic devices. Heavier halides, i.e., I– and Br–, have been thoroughly studied as capping ligands in the last years, but passivation with fluoride ions has not received sufficient consideration. In this work, effective coating of PbS CQDs with fluoride ligands is demonstrated and compared to the results obtained with other halides. The electron mobility in field-effect transistors of PbS CQDs treated with different halides shows an increase with the size of the atomic ligand (from 3.9 × 10–4 cm2/(V s) for fluoride-treated to 2.1 × 10–2 cm2/(V s) for iodide-treated), whereas the hole mobility remains unchanged in the range between 1 × 10–5 cm2/(V s) and 10–4cm2/(V s). This leads to a relatively more pronounced p-type behavior of the fluoride- and chloride-treated films compared to the iodide-treated ones. Cl–- and F–-capped PbS CQDs solids were then implemented as p-type layer in solar cells; these devices showed similar performance to those prepared with 1,2-ethanedithiol in the same function. The relatively stronger p-type character of the fluoride- and chloride-treated PbS CQD films broadens the utility of such materials in optoelectronic devices. ISSN:2574-0970

Semiconducting single‐walled carbon nanotubes (s‐SWNTs) are used as a protective interlayer between the lead sulfide colloidal quantum dot (PbS CQD) active layer and the anode of the solar cells (SCs). The introduction of the carbon nanotubes leads to increased device stability, with 85% of the initial performance retained after 100 h exposure to simulated solar light in ambient condition. This is in sharp contrast with the behavior of the device without s‐SWNTs, for which the photoconversion efficiency, the open circuit voltage, the short‐circuit current, and the fill factor all experiencing a sharp decrease. Therefore, the inclusion of s‐SWNT as interlayer in CQD SCs, give rise to SCs of identical efficiency (above 8.5%) and prevents their performance degradation. ISSN:2196-7350

Thanks to their broadly tunable bandgap and strong absorption, colloidal lead chalcogenide quantum dots (QDs) are highly appealing as solution-processable active layers for third-generation solar cells. However, the modest reproducibility of this kind of solar cell is a pertinent issue, which inhibits the exploitation of this material class in optoelectronics. This issue is not necessarily imputable to the active layer but may originate from different constituents of the device structure. Herein, the deposition of TiO2 electron transport layer is focused on. Atomic layer deposition (ALD) greatly improves the reproducibility of PbS QD solar cells compared with the previously optimized sol–gel (SG) approach. Power conversion efficiency (PCE) of the solar cells using atomic layer–deposited TiO2 lies in the range between 5.5% and 7.2%, whereas solar cells with SG TiO2 have PCE ranging from 0.5% to 6.9% with a large portion of short-circuited devices. Investigations of TiO2 layers by atomic force microscopy and scanning electron microscopy reveal that these films have very different surface morphologies. Whereas the TiO2 films prepared by SG synthesis and deposited by spin coating are very smooth, TiO2 films made by ALD repeat the surface texture of the fluorine-doped tin oxide (FTO) substrate underneath.