Search

The performance of the proposed depletion-type β-Ga2O3 negative-capacitance field-effect transistor (NCFET) having stacked ferroelectric HfO2 and Al2O3 gate dielectrics is investigated to determine its utility for radiofrequency (RF) applications. The results obtained for the RF performance of the proposed device are analyzed and compared with those of an experimentally demonstrated β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET.) The key figures of merit (FOMs) used to investigate its RF performance are the intrinsic capacitances (Cgs and Cgd), transconductance (gm), and cutoff frequency (fT), as well as large-signal FOMs such as the output power (POUT), power gain (GP), and power-added efficiency. The large-signal RF FOMs are obtained by considering a continuous-wave (CW) class A power amplifier, and the measurements are carried out at 0.8 GHz using a passive load and source tuning. The results of this work indicate that the proposed β-Ga2O3 NCFET design will be useful for efficient device integration, offering the advantages of a steep slope and operation at a lower supply voltage for RF applications.

Shelterbelt plantations are one of the biggest ecofriendly technologies to address wind erosion, control sand movement and related problems in the arid areas, which cover 12 per cent of India and more than half of Rajasthan. However, the role of shelterbelts in arid agriculture is changing. A survey was undertaken to investigate the farmers' perception toward field shelterbelts/windbreaks and its impact in farmers' fields in the arid district of Bikaner, Rajasthan. Questionnaire, group discussion and observations were used for data collection. The respondents of the study were the farmers having already established shelterbelts in their farms. The study revealed that farmers were using windbreaks on agricultural lands mainly to protect crops from strong winds, provide shade to livestock, reduce crop damage from frost and cold winds, reduce soil erosion etc.; while the biggest challenge was the competition by trees to the crops growing below them. The farmers' preference for tree species was also noted to have changed over the years. Though old shelterbelts were mainly of Acacia tortilis, farmers now prefer Dalbergia sissoo (45 per cent prevalence), since it does not affect crop growth and for its economic timber value. Other species like Zizyphus sp., Eucalyptus sp., Cordia myxa etc. when used as shelterbelts provide fruits and fuelwood which provide additional income to farmers.

Objectives: In this work, the performance of single-gate and double-gate FD-SOI MOSFETs has been investigated in order to find out its utility RF applications. Methods/statistical analysis: The small-signal equivalent model is utilized to obtain the Y parameter of the devices and from which the minimum noise Figure and S parameter of the devices are derived and provides its applicability in the design of RFICs. The analysis is carried out using the Silvaco 2D ATLAS tool. Findings: The simplified small-signal equivalent models for both the devices are developed to analyze its high-frequency response more accurately, and to extract other important high-frequency (RF) parameters. Application/improvements: The derived S parameters are used to evaluate its high-frequency (RF) losses. In the SG FD-SOI MOSFET, the Insertion loss is 2.47 dB, the Transmission loss is 2.48 dB and the Reflection loss is 1.02 dB lower in comparison to DG FD-SOI MOSFET while its Return loss is 0.05 dB higher in comparison to that of DG FD-SOI MOSFET.Keywords: FD-SOI MOSFET, RFICs, Leakage Current, Power Dissipation, RF Frequency

Gallium oxide (Ga2O3) due to its Ultra-wide bandgap (UWB) becomes the most promising semiconductor material for future-generation electronic applications. The Ga2O3 semiconductor possesses excellent material properties such as ultra-wide bandgap of 4.8 eV, ability to withstand breakdown field ranging from 5 to 9 MV/cm along with superior thermal and chemical stability. Also, it has excellent Baliga’s figure-of-merit (B-FOM). However, the performance of β-Ga2O3 devices is still limited due to the issue related to good ohmic contact materials. In this work, we have studied the Impact of using multi-metal gate stack arrangements on the performance of β-Ga2O3 MOS Structure. The performance parameters used in the analysis are IDmax, IDmin, ION/IOFF, gm, and gd. It is observed that the Ti/Au metal stack arrangement shows better results among all the metal stack arrangements and hence found to be suitable for high power RF applications with low losses.

This paper demonstrates the performance comparison of Sapphire (Al 2 O 3 ) and Diamond substrate based High Electron Mobility Transistor (HEMT). The parameters used in the performance comparison includes: transfer characteristics, output characteristics and transconductance. High drain current of Sapphire makes availability for Radio Frequency (RF) application up to millimetre waves (30GHz-300GHz) and also high thermal conductivity of Diamond (2000W/ m.K) make withstand with high temperature. Transconductance of Diamond is (-350µS) and of sapphire is (-375µS) as compare to Gallium arsenide (-300µS). A study of various parameters like breakdown voltage and sub threshold slope also has been done. All these simulation work is performed using Silvaco ATLAS 2D simulator.

The paper puts forward an effect of drain-engineering on RF performance of nano-scaled FD-SOI MOSFET. The drain engineering involves implementation of lightly-doped region underneath the heavily-doped region. This arrangement leads to reduction in the parasitic capacitances which has a direct correlation with the device leakages. The key figure of merits (FOMs) used in the analysis are intrinsic-capacitances, transfer-conductance (g m ), transfer-conductance frequency product (TFP), transfer-conductance generation factor (TGF), gain frequency product (GFP), transition frequency (f T ) and gain frequency transfer-conductance product (GTFP). The analysis is carried out by using Atlas (SILV ACO) simulator.

The paper reports on performance comparison of ultra-bright blue LED using different substrate and buffer layer combination. The combination is taken as buffer layer/substrate in LED like ZnO/4H-SiC, GaN/Ga 2 O 3 , GaN/GaN & GaN/4H-SiC respectively. The I-V Characteristics of combination ZnO/4H-SiC & GaN/4H-SiC are complimenting each other. The output power gain in ZnO/4H-SiC LED increases by a factor of 10 in comparison to GaN/4H-SiC LED. Similarly, the power spectral density of ZnO/4H-SiC LED is found to be 4 times to that of GaN/4H-SiC LED. The main advantageous property of 4H-SiC is that its thermal conductivity is excellent in comparison to others and a better substitute for low cost production devices. All the analysis is carried out by using Silvaco ATLAS 2D simulator.

A power MOSFET is a specific type of MOSFET designed to handle the high level of powers. Compare to other power semiconductor device, such as an insulated gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltage. Silicon carbide (SiC) power MOSFETs are available only for low voltage and high power applications, because for blocking voltage faster than 150V. Thus, starting from a conventional 4H-SiC, 6H-SiC and 3C-SiC low voltage power MOSFETs, a novel device for high power applications has been designed. The performance parameters such as: I-V, output, transfer, breakdown, C-V and mobility behavior for 4H-SiC, 6H-SiC and 3C-SiC substrate based power MOSFETs were obtained and analyzed using ATLAS TCAD (SILVACO) simulation tool.

In this paper, the analysis on the characteristic of the Silicon-on-Insulator Ion-Sensitive Field Effect Transistor (SOI-ISFET) pH Sensor has been carried out. NaCl is used as an electrolyte to sense the change in pH value. The analysis includes DC analysis which is modeled using Poisson/Boltzmann equations and frequency-dependent AC analysis which includes Poisson/Nernst/Planck–Poisson/Drift/Drift equations together with site binding charge model equations at the electrolyte and insulator interfaces. The simulation is carried out using ENBIOS-2D Lab tool provided by nanohub group. From the results, it is observed that with an increase in the pH value, the slope of the transfer curve decreases and the threshold voltage of the device increases. Also, the frequency-dependent performance of the device at pH value of 7 is analyzed and it is observed that the device becomes less sensitive at higher frequencies.

A major challenge in crop production is to achieve the goal of increasing both yield and resource use efficiency. Irrigation water and nitrogen (N) are scarce and expensive resources constraining wheat production in arid regions. There is limited information on how irrigation and N supply can be simultaneously manipulated to achieve higher yield, water productivity (WP), and nitrogen use efficiency (NUE) of wheat in arid regions. A two-year field experiment was conducted to investigate the effects of irrigation and N rates on yield, WP and NUE of wheat in a hot, arid environment at Bikaner, India. The experimental treatments comprised of six irrigation [100% (ETm; full evapotranspiration), 90% (ETd1), 80% (ETd2), 70% (ETd3), 60% (ETd4), and 50% (ETd5) of ETc (crop evapotranspiration)] levels, and four N [0 (N0), 40 (N40), 80 (N80), and 120 (N120) kg ha −1 ] rates. Moderate deficit irrigation (ETd2) had greatest WP and caused a 17% reduction in water consumption with only a 5% reduction in yield compared to full irrigation (ETm). The N application improved yield and WP. The NUE declined with a reduction in water application and an increase in N rates. The yield and WP response to N rates modified with irrigation levels.The significant increase in grain yield was recorded with N120 at ETm and ETd1, with N80 at ETd2 and ETd3, and with N40 at ETd4 and ETd5 irrigation levels. The significant increase in WP was recorded with N80 at ETm, ETd1, ETd2 and ETd3, and with N40 at ETd4 and ETd5 irrigation levels. The results suggested that moderate deficit irrigation (ETd2) along with 120 kg N ha −1 could ensure satisfactory grain yield and WP of wheat in arid regions. The study also indicated that the adoption of an appropriate deficit irrigation and N rate combination can be an effective means to reduce non-beneficial water consumption, achieve higher yield, and improve WP and NUE for wheat in an arid environment.

A two year field experiment was conducted in hot arid region at Bikaner, Rajasthan to investigate the effects of application of sulphydryl compounds (thioglycollic acid, TGA; thiourea TU) on growth traits, photosynthetic efficiency, yield components and yield of moth bean under water deficit conditions. The experiment comprised seven treatments (water spray, TGA 200 mg L-1, TGA 300 mg L-1, TGA 400 mg L-1, TU 500 mg L-1, TU 750 mg L-1 and TU 1000 mg L-1) and laid out in randomized block design with three replications. Application of sulphydryl compounds had significant effects on growth, photosynthetic traits, activities of anti-oxidant enzymes, and yield of moth bean. The sulphydryl compounds sprayed plants had 24-70, 13-40 and 13-20 % higher activities of antioxidant enzymes (glutathione reductase, GR; gluthathione-s-transferase, GST), photosynthetic parameters (net photosynthetic rate, PN; stomatal conductance, gs; transpiration rate, E) and seed yield respectively compared to unsprayed plants. The results suggest that application of sulphydryl compounds mitigate moisture deficit induced negative effects on growth, and photosynthetic parameters which lead to better seed yield of moth bean.

This paper examine the impact of Double Doped Layer Gate Stack Junctionless (DDL-GSJL) MOSFET and Highly Doped Source Drain Gate Stack Junctionless (HDSDGSJL) MOSFET. We compare the performance of proposed MOSFET, with uniformly doped conventional junctionless MOSFET. The proposed MOSFET has no pn junction, only ntype non-uniform doping is used. Non-uniform doping is distributed in a horizontal and vertical manner. A high-k material (Si 3 N 4 ) is used as gate stack to control the leakage current and increase the I ON /I OFF . This paper present analog and RF figure of merits (FOM). In the paper major FOMs, output conductance (g d ), transconductance (g m ), cut-off frequency (f T ), transconductance frequency product (TFP) is analyzed. The simulated results reflect that HDSD-GSJL MOSFET exhibit high transconductance, high cut-off frequency and high transconductance frequency product. The structure is designed and analyzed using ATLAS 2D TCAD tools.

This work proposes UWB common gate low- noise amplifier in 0.13μm CMOS process with improved noise figure and linearity. Dominant source of noise contributed by input transistor is vanished by two transistor connected at its drain and source terminals. The proposed LNA achieves 1.6 - 2.8dB of Noise Figure and a 16.4dBm IIP3 while exhausting 3.4mW from 1.2V supply. Signal is amplified with a gain of 16.6dB. This study clearly manifests a simple and effective method to design of LNA with stability factor greater than 13.5 and return loss higher than 14dB.

A 5V and the 2GHz as input frequency down conversion(as RF frequency is greater than intermediate frequency) Gilbert mixer are presented in this paper and analyzed using 90nm CMOS technology. Differential configuration is used without need for passive baluns and transformer. Comparison of linearity can be done by using third order intercept point(IIP3) parameters and this parameters measurement is done using "two tone test" . Also to improve linearity an optimum gate bias is applied in the transconductance stage. To overcome on "non-linearity" parameters like harmonics, gain compression and intermodulation phenomen are discussed. Software used for schematic and their result is Advance Design System(ADS).

The radio-frequency (RF) performance of the p-type NiO-pocket based β-Ga2O3/black phosphorous heterostructure MOSFET has been evaluated. The key figure of merits (FOMs) for device performance evaluation include the transconductance (g m) gate dependent intrinsic-capacitances (C gd and C gs), cutoff frequency (f T), gain bandwidth (GBW) product and output-conductance (g d). Similarly, power-gain (G p), power added efficiency (PAE), and output power (P OUT) are also investigated for large-signal continuous-wave (CW) RF performance evaluation. The motive behind the study is to improve the β-Ga2O3 MOS device performance along with a reduction in power losses and device associated leakages. To show the applicability of the designed device in RF applications, its RF FOMs are analyzed. With the outline characteristics of the ultrathin black phosphorous layer below the β-Ga2O3 channel region, the proposed device results in 1.09 times improvement in f T, with 0.7 times lower C gs, and 3.27 dB improved G P in comparison to the NiO-GO MOSFET. The results indicate that the designed NiO-GO/BP MOSFET has better RF performance with improved power gain and low leakages.

The large bandgap (∼4.8 eV), high critical field strength (∼8 MV cm−1) and high saturation velocity (∼2e7 cm s−1) are the key enabling material parameters of gallium oxide (GO) which allows it for designing high power radio frequency (RF) MOSFET. In MOS device-based applications, these material parameters combined with large area native substrates and ion-implantation technology results in exceptionally low ON-state power losses, high-speed power, RF switching, and more stable high-temperature operation. This paper comprehensively focuses on reviewing the latest progress of ultra-wide bandgap GO MOSFET for RF application. The performance of GO MOS devices is fully discussed and compared. Finally, potential solutions to the challenges of GO-based MOSFET for RF applications are also discussed and explored.

The performance of gallium oxide MOSFET is limited due to the issues associated with the requirement of good contact materials for gate electrode. The single metal layer at the gate electrode does not possess all the suitable material properties such as good adhesive behavior, high work function, and low specific resistance. In this work, the effect of different metals, to modulate the work function of depletion-type gallium oxide MOSFET is studied so as to improve its RF performance. The advantage of work function modulation and energy band aligned gate electrode shows low specific contact resistivity with a good ohmic contact. The key figure of merits (FOMs) for its RF performance investigation includes intrinsic capacitances (Cgs & Cgd), output conductance (gd), transconductance (gm), and cut-off frequency (fT). This work elucidates that the Ti/Au metal stack with high fT value found to be superior for RF applications.

In this work, the RF performance of proposed p-type NiO pocket based β-Ga2O3/graphene heterostructure MOSFET has been investigated. The figure of merits (FOMs) for its performance investigation includes transconductance (gm), output conductance (gd), intrinsic capacitances (gate to drain capacitance Cgd and gate to source capacitance Cgs) and cut-off frequency (fT). The large signal CW RF performance is also investigated which includes output power (POUT), power-added efficiency (PAE) and power gain (Gp) as a key FOMs. The key idea behind this work is to demonstrate a device with improved RF performance and low leakages. The RF characteristics of the proposed device have been studied to show its utility in the wireless applications. The introduction of ultra-thin graphene layer beneath the channel region results in 0.85 times lower Cgs, 1.04 times improvement in fT and 1.5 dB superior GP in comparison to the p-type NiO pocket based β-Ga2O3 (NiO-GO) MOSFET. The proposed structure shows superior RF performance with low leakages.

The read and write stability of SRAM cell depends on the high-performance CMOS technologies (FD-SOI technology), due to low power dissipation, and high switching and inter-die variability. This paper first analyzed the electrical behavior of ultrathin body fully depleted silicon-on-insulator (UTB FD-SOI) MOSFET. It is demonstrated that the FD-SOI MOSFET has high Ion to Ioff ratio (better switching) and low threshold voltage. By taking into account of high switching of UTB FD-SOI MOSFET, it is further used to form a 6T SRAM cell. The read and write behavior of 6T SRAM cell has been studied using the read static noise margin (RSNM) and write static noise margin (WSNM). It is observed that the results obtained from the behavior of SNM show that the design of SRAM cell is more robust and highly stable. Further, the results were compared and contrasted with the reported literature, i.e., FinFET- and SOI MOSFET-based SRAM cell. The structures were designed and simulated using Synopsys TCAD device simulator.

This paper presents the impact of asymmetricity in the double gate oxide material on the Radio Frequency (RF) performance of the single FDSOI MOSFET. The results are obtained by using 2D Atlas TCAD tool. From the simulated results it is observed that the cutoff frequency (IT) which is used as a key parameter to evaluate the High frequency performance of the device is smaller when the asymmetricity is near the source side and larger when the asymmetricity is near the drain side.

In this paper, we analyze the role of using silicon nitride (Si 3 N 4 ) and hafnium dioxide (Hf02) as a high-k dielectric material on analog and RF performance of 32nm fully depleted silicon-on-insulator (FDSOI) MOSFET. From the analysis, it is observed that Hf02 provides better analog performance in term of transconductance and reduces leakage current as compare to Si 3 N 4 but for RF performance in terms of cut-off frequency (f T ) and transconductance frequency product (TFP) negligible improvement is found between Si 3 N 4 and Hf02. It is also found that in IC design the high value of k is not preferred for high frequency applications and also fabrication is easy by using Si 3 N 4 as compare to Hf02. Therefore, Hf02 is used for low power applications and for high frequency applications Si 3 N 4 is preferred. All the design and simulation is carried out through ATLAS 2D TCAD simulator.

This paper presents the analysis on Analog and RF performance of Gate Stack and BOX Stack (GSBS) and Gate Stack (GS) Fully Depleted Silicon On Insulator (FD-SOI) MOSFET. Here stacking of Si 3 N 4 (high-k) over SiO 2 layer is used to reduce the short channel effects (SCEs) as well as leakage currents and increase the controllability of the gate electrode on the channel. In the analysis of the analog and RF performance of the proposed structures, it is observed that transconductance (gm), cut off frequency (fT), transconductance frequency product (TFP) is improved by using gate stack while with the use of both gate and Box stacking its RF performance degraded. For high frequency application, stacking anywhere other than gate insulator will lead to degraded performance of the device. The structure is designed and analyse using ATLAS 2D TCAD tools.

The study was conducted at ICAR-Central Arid Zone Research Institute, Regional Research Station, Bikaner to study the effect of tree leaf litters on yield and nutrient uptake of clusterbean-oat rotation during 2010-11 and 2011-2012. Leaf litters of seven tree species viz. Mopane: Colophospermum mopane, Gum acacia: (Acacia senegal) , Umbrella tree: (Acacia tortilis) , Indian rosewood: (Dalbergia sissoo), Sour lime: (Citrus aurantifolia), Assyrian plum: (Cordia myxa) and Bengal quince: (Aegle marmeloswere) applied in microplots of 2 x 2 meter @ 2.5 t/ha. Chemical fertilizers were used as per recommendations of individual crop. The result showed that maximum grain yield of clusterbean was obtained with the application of leaf litter treatments of Citrus aurantifolia. The increase in grain yield was in the order of leaf litter treatments of Citrus aurantifolia, Dalbergia sissoo and Aegle marmelos, respectively. The residual effect of leaf litters of Citrus aurantifolia, Dalbergia sissoo and Aegle marmelos increased the grain yield of oat by 13.3-16.0 percentage in 2010-11 and 14.8-16.1 percentage in 2011-12, respectively. There was no significant effect of leaf litters of Cordia myxa and Acacia senegal on grain yield of clusterbean and oat. Litter addition had significant effect on nutrient uptake also. The mean uptake of nutrients was significantly higher in Citrus aurantifolia, Dalbergia sissoo and Aegle marmelos treatments as compared to control. The two years average data showed that the total uptake of N in clusterbean increased from 21.3 kg/ha in control to 32.2, 28.5 and 30.8 kg/ha in Citrus aurantifolia, Dalbergia sissoo and Aegle marmelos treatments, respectively. Nitrogen, phosphorus and potassium uptake was non-significant in the treatments Colophospermum mopane, Cordia myxa, Acacia tortilis and Acacia senegal

Ravine lands are spread over an area of about 4.3 million hectare in India, but their largest incidence (about 72%) is found along the rivers Yamuna, Chambal, Mahi, and Sabarmati and their tributaries in Uttar Pradesh, Madhya Pradesh, Rajasthan and Gujarat states. These are the worst form of land degradation and formed when the vegetal cover is not strong enough to hold and bind the soil together from being carried away by the flowing rainwater. Loss of land due to soil erosion and uncertain crop yield from eroded soil increases the risk to sustain the livelihood of inhabitants of ravine-affected area. According to an estimate, India loses about 3 million tons of food grain due to the formation of ravine lands. These losses can be minimised through adoption of scientific techniques to reclaim and check their further extension. For rehabilitation and controlling the further extension of these lands, integration of soil-water conservation measures with suitable agroforestry systems using fruit trees/shrubs, forage grasses and energy plantations seems viable option. Many species of fruit trees, shrubs, grasses, energy plantations and medicinal use have been identified for their environmental suitability in ravine lands. Using appropriate engineering technology and selecting appropriate species, these lands can improve the livelihood of local inhabitants through production of fodder for animals, fuelwood for energy requirement and food crops and fruits for human consumption. Tree-based technologies have additional environmental benefits. Growing trees with annual crops or pasture grasses help in retaining soil moisture by reducing runof f and simultaneously reduce nutrient leaching losses through root and mycorrhizal systems, regulate biodiversity, improve soil quality and sequester huge amounts of carbon in their biomass. This chapter describes the formation of ravine lands, the ways to reclaim and sustain them through integrated approach of soil-water conservation technologies and agroforestry systems with the emphasis to improve the economic condition and livelihood of the farmers, conserve natural resources and provide ecosystem services under climate change scenario.

The conventional scaling of device dimension uses high doping which leads to degraded mobility and large undesirable junction capacitances. This paper provides a new idea to overcome the short-channel effects (SCEs) in the MOSFETs whose gate length lies in the deep submicrometer range. Here asymmetric DG-FD-SOI MOSFET having N+N− epi-source is proposed whose performance is analyzed. The ION/IOFF ratio of the proposed device is nearly 1010 which is good enough for fast switching applications.

SUMMARYWater stress is one of the main environmental stress conditions that adversely affect growth and yield of crops. Sulphydryl (-SH) compounds have been reported to induce tolerance to abiotic stress conditions. A two-year (2010 and 2011) experiment was conducted at Bikaner, Rajasthan, India to test whether the exogenous applications of thiourea (500, 750 and 1000 mg L−1) and thioglycolic acid (200, 300 and 400 mg L−1) as a foliar spray would alleviate deleterious effects of water stress on clusterbean (Cyamopsis tetragonoloba L.). The -SH-treated plants showed higher membrane stability index, photosynthetic pigment content, photosynthetic capacity and antioxidant enzyme activities and lower lipid peroxidation compared with untreated plants. Compared with untreated plants, the -SH-treated plants had 11–18, 18–30, 17–57, 25–47, 14–22% higher membrane stability index, total chlorophyll content, antioxidant enzyme activities, net photosynthetic rate and seed yield, respectively; whereas the malondialdehyde content was 10–19% lower. These data suggest that under water deficit stress, exogenous -SH compound application improves photosynthesis by increasing photosynthetic pigment, protects plants against oxidative damage by scavenging reactive oxygen species and minimizing lipid peroxidation by elevated antioxidant enzyme activities. These results indicated the role of -SH compounds in diminishing the negative effects of water deficit on clusterbean and suggest that -SH compounds could be used as a potential bioregulator to improve plant growth and yield under water deficit conditions.

Water-scarcity is increasing in many countries, and more regions are moving into increasing water-stressed conditions. According to an estimate, about 4500 km3 year−1 more water will be needed to feed the world population in 2050 at current crop water productivity levels. There is little scope to increase food production by increasing the area under cultivation. Hence, there is a need to devise such production systems that can produce food from marginal agricultural land and is also capable of maintaining and improving quality of soil and environment. This can be achieved through agroforestry. In India, the current area under agroforestry is estimated as 25.32 million hectares (m ha). There is further scope of increasing the area under agroforestry by another 28.0 m ha in the future. Thus, a total of 53.32 m ha area of the country could potentially be brought under agroforestry in the near future, which will make agroforestry a major land use activity, after agriculture (140.86 m ha) and forestry (69.63 m ha). There is substantial experimental evidence to support the hypothesis that agroforestry may increase productivity by making better use of available resources. Significant complementarities of water use may occur naturally if trees with suitable leafing phenology or rooting architecture are used in agroforestry systems. To achieve this, the trees and crops must capture a greater proportion of the available resources and use them more efficiently to produce dry matter than equivalent sole stands. A number of technologies with suitable tree and crop combinations have been identified for different agroecological zones of the country. These technologies provide options for improving livelihood, environmental and energy security. This paper describes the promising agroforestry systems to achieve higher productivity in water-stressed ecologies.

The study on “Evaluation of Cropsyst model for yield and water productivity of clusterbean” was conducted on farmers field during kharif 2012 at village Mainawali in Hanumangarh district of Rajasthan. The soils of the area are alluvial and calcareous in nature formed under arid and semi arid climate. The soils of site are brown to greyish brown and dark grey in colour, besides being calcareous and slightly alkaline in reaction having 67.7, 11.1 and 21.0 % of sand, clay and silt, respectively in 0-15 cm soil depth with pH 8.09 and low soil organic matter content. The simulate yield of clusterbean were closer to the observed clusterbean yield. Simulations of early clusterbean above ground biomass development matched the field data reasonably well. Final above ground biomass, however, was over estimated by the model. The total water applied in clusterbean was 405.8 mm out of this 326.7 mm consumed in ET. Thus, ET constituted 81% of total water applied and deep drainage constituted 13% and rest 6% stored as residual soil moisture.

In this work one-transistor static random access memory cell (SRAM) to reduce power consumption using tunnel diode as basic latching circuit element is designed and simulated. The SRAM cell consists of a transistor (nMOSFET) having effective gate length of 18nm and a pair of Si-Ge Tunnel diode having current peak to valley current ratio (PVR) of value 1.67 each. The bistability of the back-to-back series connected tunnel diode pair is used to hold the states of the designed SRAM cell and the pass transistor is used to control the switching of the tunnel diode. The changing in the state of the designed SRAM is observed by the variation of drain current (ID) of the transistor. This SRAM cell highly reduces the power dissipation compared to conventional SRAM cell and other SRAM cell structures.

Indira Gandhi Nahar Pariyojana/Project (IGNP) in the Thar Desert is one of the largest irrigation projects in the world. As a result of this initiative, 1.86 million hectare area has come under cultivation. Although irrigation has greatly increased the agricultural production potential, it has also rendered vast tracts of land under waterlogged category (leading to salinization as well) on account of seepage and deep percolation losses from the irrigation network and lack of a proper drainage system. The concept of biodrainage, removal of groundwater through evapotranspiration, has emerged as an effective way to tackle this problem. Such an approach is economical and eco-friendly. However, more research is required to fully understand the implications, especially at farm level. The policy to control the problems associated with waterlogging and salinization should include biodrainage, reduced water allowance, efficient irrigation, and conjunctive uses.

A field experiment was conducted at Central Arid Zone Research Institute, Regional Research Station , Bikaner during Kharif seasons of 2012 and 2013 on Squash Melon (Tinda) crop under rainfed conditions to evaluate four treatments of Farm Yard Manure viz.,0,20,30 and 40 t ha-1 and three treatment of mulching viz., no mulch ,straw mulch and plastic mulch. Experiment was conducted in split – plot design with three replications using the Tinda cv. Selection 1. Vine length, numbers of fruits per plant and yield of squash melon (Tinda) crop were significantly influenced by FYM, mulching and their interaction during both the years of experiment. Application of FYM recorded significant improvement in yield up to 30 t ha-1. Averaged across mulching, the yield with application of FYM @ 20, 30 and 40 t ha-1 had 43.3, 83.9 and 87.4 % higher yield compared to control. Application of mulch brought significant improvement in yield and its component. The straw mulch recorded highest vine length, numbers of fruits per plant and yield. Plastic and straw mulch had 24.80 and 42.25 % higher yield than no-mulch. The response of mulch varied with level of FYM application. The highest yield was recorded with application of 40 FYM t ha-1 combined with straw mulch, however the difference between FYM 30 t ha-1 and 40 t ha-1 was non-significant under both straw and plastic mulching.