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Non-traumatic exertional rhabdomyolysis (exRML) occurs in individuals with normal muscles when the energy supplied to the muscle is insufficient. Here, we report 11 cases of spinning-induced rhabdomyolysis and review related literature. Spinning is a kind of indoor bicycle sport. The 11 patients who were diagnosed with exRML and admitted to CHA Bundang Medical Center were female and their ages ranged from 15 to 46 years. Two to three days prior to the presentation, the patients had attended a spinning class for the first time. All the patients had been otherwise healthy without any known medical illnesses. They were successfully treated without any complications, except mild non-symptomatic hypocalcemia. However, in the literature, severe complications such as compartment syndrome or acute kidney injury had been reported in relation to exRML including spinning-induced rhabdomyolysis. This spinning exercise needs prior guidelines and specific warnings to prevent exertional rhabdomyolysis.

High-rate dry etching characteristics of aluminum-doped zinc oxide (AZO) have been investigated in inductively coupled plasma (ICP) using BCl3/CH4/H2 plasma chemistry. Etch rates were measured as a function of BCl3 flow rate in BCl3/CH4/H2 mixture and dc-bias voltage. Measurement of etch rate, and etched sidewall profile were performed using a stylus profilometer and scanning electron microscopy, respectively. The highest AZO etch rate about 310 nm/min, could be obtained near 80% BCl3 and at dc-bias voltage of -350 V.

Tin-doped indium oxide (ITO) thin films were deposited at room temperature by a dual-oxygen-ion-beam-assisted evaporator system and the effects of doped tin concentrations in the films on the electrical properties of the ITO films were investigated. Doped tin atoms in amorphous ITO films caused extra scattering and structural defects due to the inactivation of tin atoms in the films. Therefore, increasing the tin concentration decreased the conductivity. The lowest resistivity of indium oxide (IO) and ITO obtained was 3.6×10-4 Ω-cm for IO and 4×10-4–7×10-4 Ω-cm for 5–25 wt% SnO2. The mobility and mean free path of these films were 20–63 cm2/Vs and 3.3–7.4 nm, respectively.

SiO2 thin films were deposited at the temperatures 2/O2 gas mixture, and the physical and chemical characteristics as well as the characteristics as a transparent diffusion barrier to H2O were investigated. Using a gas combination of TEOS(40 sccm)/O2(500 sccm)/N2(100 sccm) at source power of 500 W and dc bias voltage of -350 V, SiO2 with a stoichometric composition of SiO2 and a smooth surface similar to the substrate could be deposited. When a multilayer diffusion barrier composed of parylene(800 nm)/SiO2(100 nm)/parylene(800 nm)/SiO2(100 nm)/parylene(800 nm) was formed on a polyethersulfone (PES) substrate, the water vapor transmission rate (WVTR) of the substrate was decreased from 54.1 to 0.3 gm/(m2·day).

This study examined the effects of a He/O2 and He/SF6 atmospheric pressure plasma surface treatment of indium tin oxide (ITO) glass on the ITO surface and electrical characteristics of organic light emitting diodes (OLEDs). The OLEDs composed of ITO glass/2-TNATA/NPD/Alq3/LiF/Al showed better electrical characteristics, such as lower turn-on voltage, higher power efficiency, etc., after the He/O2 or He/SF6 plasma treatment. The He/SF6 treatment resulted in superior electrical characteristics compared with the He/O2 treatment. The electrical improvement as a result of the He/SF6 and He/O2 plasma treatments is related to the decrease in the carbon and Sn4+ concentration on the ITO surface and fluorine doping of the ITO possibly indicating a change in the work function as a result of the treatments.