133 results on '"Nam, O. H."'
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2. Supernumerary teeth in Korean children: a survey of 1130 cases: O20-148
3. Growth and Characterization of GaN and ALxGA1−xN Thin Films Achieved Via Lateral- and/or Pendeo-Epitaxial Overgrowth on 6H-SIC(0001) Substrates
4. Acceptor and donor doping of AlxGa1−xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy
5. Organometallic Vapor Phase Lateral Epitaxy of Low Defect Density GaN Layers
6. Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy
7. Photoelectrochemical Capacitance-Voltage Measurements in GaN
8. The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions
9. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
10. Comparison of output power of InGaN laser diodes for different Al compositions in the AlGaN n-cladding layer.
11. Measurement of optical loss variation on thickness of InGaN optical confinement layers of blue-violet-emitting laser diodes.
12. Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates.
13. Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes
14. Re: Minimal invasive treatment using patient-specific template for mandibular fractures in children: “Wing- splint” by CAD/CAM technology
15. Structural and optical characterization of (11‐22) semipolar GaN on m ‐plane sapphire without low temperature buffer layer
16. High-power AlInGaN-based violet laser diodes with InGaN optical confinement layers
17. Behaviors of Emission Wavelength Shift in AlInGaN-Based Green Laser Diodes
18. Determination of internal parameters in blue InGaN laser diodes by the measurement of cavity-length dependent characteristics
19. Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices
20. Characteristics of long wavelength InGaN quantum well laser diodes
21. Dry etching and metallization schemes in a GaN/SiC heterojunction device process
22. High-Performance Blue InGaN Laser Diodes With Single-Quantum-Well Active Layers
23. Development of AlInGaN-based Blue laser diodes
24. Inhomogeneity of InGaN quantum wells in GaN‐based blue laser diodes
25. Radiative and non‐radiative transitions in blue quantum wells embedded in AlInGaN‐based laser diodes
26. Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates
27. Recent achievements of AlInGaN based laser diodes in blue and green wavelength
28. Surface modifications and optical properties of blue InGaN single quantum well by in-situ thermal treatments
29. Negative characteristic temperature of InGaN blue multiple‐quantum‐well laser diodes
30. Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes
31. Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics
32. Recent progress of high-power InGaN blue-violet laser diodes
33. Highly stable temperature characteristics of InGaN blue laser diodes
34. Comparative optical studies on violet InGaN quantum well laser diode structures grown on sapphire and GaN substrates
35. Thermal analysis of GaN‐based laser diode package
36. Carrier confinement effect enhanced by AlGaN/GaN multi-quantum barrier in AlInGaN based high power blue-violet laser diodes
37. Investigation of Pd∕Ti∕Al and Ti∕Al Ohmic contact materials on Ga-face and N-face surfaces of n-type GaN
38. High-power GaN-based blue-violet laser diodes with AlGaN∕GaN multiquantum barriers
39. Growth pressure dependence of residual strain and threading dislocations in the GaN layer
40. Characteristics of GaN-based laser diodes for post-DVD applications
41. Low resistance and highly reflective Cu–Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes
42. Fabrication of AlInGaN-based blue-violet laser diode with low input power
43. Low resistance and transparent Ni–La solid solution/Au ohmic contacts to p-type GaN
44. Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes
45. Recent progress of high power GaN‐based violet laser diodes
46. Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters
47. High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN
48. High power AlInGaN-based blue-violet laser diodes.
49. Research Related to the Development, Fabrication and Characterization of UV Detectors and Cold Cathode Devices.
50. Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate
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