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47 results on '"Nallatamby, J.C."'

5. An efficient design method of microwave oscillator circuits for minimum phase noise

Author

Prigent, M., Camiade, M., Nallatamby, J.C., Guittard, J., and Obregon, J.

Subjects
Microwave oscillators -- Design and construction, Microwave integrated circuits -- Design and construction, Circuit design -- Methods, Microwave communications -- Equipment and supplies, Business, Computers, Electronics, Electronics and electrical industries
Abstract

In this paper, we describe a newly developed design method of high-Q microwave oscillator circuits leading to the minimum phase noise for a given transistor and resonator. The key point of the method is the maximization of the energy stored in the resonator and its transfer to the controlling input voltage port of the transistor. The proposed method has been applied to two experimental oscillators setups with pseudomorphic high electron-mobility transistors. A state-of-the-art phase noise of -50 dBc [at] 10-Hz offset from carrier with a 1/[f.sup.3] slope has been measured at room temperature with a 9.2-GHz oscillator. The efficiency of this design method and its ease of use represent, in our opinion, a real breakthrough in the field of low-noise transistor oscillator circuit design.

Published
1999

6. Comparaison de la linéarité de 2 technologies AlGaN/GaN HEMTs en utilisant un signal USMT

Author

Gillet, Vincent, Bouslama, Mohamed, Chang, Christophe, Teyssandier, Charles, Nallatamby, J.C., Prigent, Michel, Systèmes RF (XLIM-SRF), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), United Monolithic Semiconductors (UMS), and Nallatamby, Jean-Christophe

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], [SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2019

7. Drain Current Recovery Time Analyses of InAlGaN/GaN HEMTs Realized with a Back-Barrier Buffer Layer

Author

Piotrowicz, S., primary, Lacam, C., additional, Michel, N., additional, Oualli, M., additional, Patard, O., additional, Delage, S.L., additional, Potier, C., additional, Jacquet, J.C., additional, Nallatamby, J.C., additional, Prigent, M., additional, Altuntas, P., additional, Chartier, E., additional, Dua, C., additional, and Gamarra, P., additional

Published
2019
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8. Advanced Phase noise modeling techniques of nonlinear microwave devices

Author

PRIGENT, M., NALLATAMBY, J.C., and QUERE, R.

Subjects
Hardware_INTEGRATEDCIRCUITS, ING-INF/01 Elettronica
Abstract

In this paper we present a coherent set of tools allowing an accurate and predictive design of low phase noise oscillators. Advanced phase noise modelling techniques in non linear microwave devices must be supported by a proven combination of the following : - Electrical modeling of low-frequency noise of semiconductor devices, oriented to circuit CAD . The local noise sources will be either cyclostationary noise sources or quasistationary noise sources. - Theoretically-based design rules are needed in order to define the most appropriate circuit architecture in function of the main characteristics to be optimized. For phase noise evaluation in feedback oscillators, the modified Leeson formula is a useful tool. Finally, results obtained with a 2 GHz HBT push-push VCO based on this methodology are presented.

Published
2004
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9. A measurement based model of HEMT teking into account the non linear, non uniform transmission line nature of the channel its associated low frequency noise sources

Author

Laloue, A., Camiade, M., Valenza, M., Vildeuil, J.C., Nallatamby, J.C., Prigent, M., Obregon, J., and Quéré, R.

Subjects
Computer Science::Emerging Technologies, ING-INF/01 Elettronica
Abstract

For the first time, a fully measurement based extraction procedure of non linear and non uniform transmission line model of FET devices is proposed. This model describes accurately the distributed nature under the device gate which allows a good distortion prediction (IM3) and promises good perspectives for simulation of noise characteristics in non linear circuits.

Published
2000

10. Low Phase Noise 2 GHz HBT Push-Push VCO Based on an Advanced Low Frequency Noise Model

Author

SION, A., CORTESE, P., GOURDON, C., CAMIADE, M., NALLATAMBY, J.C., SION, A., CORTESE, P., GOURDON, C., CAMIADE, M., and NALLATAMBY, J.C.

Abstract

After investigation of the possible HBT low frequency noise sources and their localization in order to extract a HBT low frequency noise model, the realisation and performances of a S band Voltage Controlled Oscillator (VCO) is reported. This VCO is fully integrated in MMIC technology, and is based on a push-push topology. The circuit is covering 280 MHz tuning range around a centre frequency of 2 GHz with a phase noise of –95 dBc/Hz at 10 KHz offset.

Published
2004

35. New approach of nonlinear analysis of noise behavior of synchronized oscillators and analog-...

Author

Nallatamby, J.C., Prigent, M., Sarkissian, J.C., Quere, R., and Obregon, J.

Subjects
*AUDIO-frequency oscillators, *ELECTRIC circuits, *PHASE-locked loops
Abstract

Describes a nonlinear analysis of noise behavior for use in synchronized oscillators and other unstable circuits, using the phase-locked loop (PLL) approach. Information on the phase-noise spectrum obtained by the analytical PLL theory and simulator development; Effects of injected noise; Discussion on the original approach to predict the noise behaviour of a synchronized oscillator based PLL theory.

Published
1998
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