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1. Design of 0.25 μm 2.7 V 2T2C 4 Mb asynchronous ferroelectric random access memory (FRAM) for mobile applications

Author

Byung-Jun Min, Mun-Kyu Choi, Byung-Gil Jeon, Seung-Gyu Oh, Nakwon Chang, and Kinam Kim

Subjects
Random access memory, Asynchronous operation, Hardware_MEMORYSTRUCTURES, Computer science, business.industry, Sense amplifier, Electrical engineering, Skew, General Physics and Astronomy, Ferroelectricity, Asynchronous communication, General Materials Science, Electronics, business, Access time
Abstract

In order to fabricate nonvolatile 4 Mb ferroelectric random access memory (FRAM) for the application to portable electronic devices, we proposed two noble techniques; (1) shared sense amplifier arrangement structure for reducing a chip size, active current, and power consumption, and (2) address transition detection (ATD) control scheme for asynchronous operation and limited address skew-free. We successfully developed 4 Mb FRAM with the address access time of 90 ns, read/write cycle time of 100 ns, and limited address skew-free of 20 ns at 2.7 V and 85 °C.

Published
2004
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