553 results on '"Nakatsuka, Osamu"'
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2. Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films
3. Emergence of ferroelectricity in ZrO2 thin films on TiN/Si featuring high temperature sputtering method
4. Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing
5. Tensile-strained Ge1−x Sn xlayers on Si(001) substrate by solid phase epitaxy featuring seed layer introduction
6. No external load measurement strategy for micro thermoelectric generator based on high-performance Si1−x−yGexSny film
7. Selective epitaxial growth of Ge1−xSnx on Si by using metal-organic chemical vapor deposition
8. Preface: Special issue on control of semiconductor interfaces (ISCSI-IX)
9. Lattice-matched growth of a high-Sn-content (x~0.1) Si1−x Sn xlayers on Si1−y Ge ybuffers using molecular beam epitaxy
10. Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation
11. Atom probe tomography study on Ge1 − x − ySnxCy hetero-epitaxial film on Ge substrates
12. Epitaxial formation of Ni germanide on Ge(0 0 1) substrate by reactive deposition
13. Epitaxial growth and crystalline properties of Ge1−x−ySixSny on Ge(0 0 1) substrates
14. Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1−x−yGexSny layers on SiO2
15. Crystalline and optoelectronic properties of Ge1−x Sn x /high-Si-content-Si y Ge1−x−y Sn x double-quantum wells grown with low-temperature molecular beam epitaxy
16. Stabilized formation of tetragonal ZrO2 thin film with high permittivity
17. Characterization of crystalline structures of SiGe substrate formed by traveling liquidus-zone method for devices with Ge/SiGe structures
18. Importance of control of oxidant partial pressure on structural and electrical properties of Pr-oxide films
19. Influence of Ge substrate orientation on crystalline structures of Ge1 − xSnx epitaxial layers
20. Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties
21. Analysis for positions of Sn atoms in epitaxial Ge1 − xSnx film in low temperature depositions
22. Epitaxial formation and electrical properties of Ni germanide/Ge(110) contacts
23. Formation and characterization of locally strained Ge1 − xSnx/Ge microstructures
24. Preface: Advances in semiconductor materials, technology, and applications
25. Silicides
26. Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1−x−y Si x Sn yepitaxial layers grown on GaAs(001)
27. Development of epitaxial growth technology for Ge1−xSnx alloy and study of its properties for Ge nanoelectronics
28. Epitaxial growth and anisotropic strain relaxation of Ge1−xSnx layers on Ge(1 1 0) substrates
29. Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure
30. Influence of Sn incorporation and growth temperature on crystallinity of Ge1 − xSnx layers heteroepitaxially grown on Ge(110) substrates
31. Lattice-matched growth of high-Sn-content (x ∼0.1) Si1− x Sn x layers on Si1− y Ge y buffers using molecular beam epitaxy.
32. Effect of atomic deuterium irradiation on initial growth of Sn and Ge1−xSnx on Ge(0 0 1) substrates
33. Growth of Ge1 − xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates
34. Low temperature formation of Si1 − x − yGexSny-on-insulator structures by using solid-phase mixing of Ge1 − zSnz/Si-on-insulator substrates
35. Improvement of Al2O3/Ge interfacial properties by O2-annealing
36. Homogeneous Si0.5Ge0.5 bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone method
37. High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride
38. Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators
39. Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray diffraction
40. Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(1 1 1) and (0 0 1) Schottky contacts
41. Control of interfacial properties of Pr-oxide/Ge gate stack structure by introduction of nitrogen
42. Formation of Ni(Ge 1−xSn x) layers with solid-phase reaction in Ni/Ge 1−xSn x/Ge systems
43. Control of strain relaxation behavior of Ge 1−xSn x buffer layers
44. Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments
45. Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs
46. Interface Structures and Electrical Properties of Micro-Fabricated Epitaxial Hf-Digermanide/n-Ge(001) Contacts
47. Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height
48. Photoluminescence properties of heavily Sb doped Ge1−x Sn x and heterostructure design favorable for n+-Ge1−x Sn x active layer
49. Heteroepitaxial Growth of Si, Si1−xGex-, and Ge-Based Alloy
50. List of Contributors
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