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11 results on '"Nail, Cecile"'

2. Advances in the understanding of microscopic switching mechanisms in ReRAM devices

Author

Sklenard, Benoit, Blaise, Philippe, Traore, Boubacar, Dragoni, Alberto, Nail, Cecile, Vianello, Elisa, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Jonchère, Laurent

Subjects
[CHIM] Chemical Sciences, [CHIM]Chemical Sciences
Abstract

International audience; In this paper we present the recent advances in the understanding of microscopic mechanisms driving the resistive switching in ReRAM devices using ab initio theoretical methods. We highlight the complex interplay between interface reactions and charge injection in the generation of oxygen Frenkel pairs during the forming step. Energy barrier calculations suggest that the formation/destruction of the conductive filament can be due to movements of oxygen vacancies composing the filament or interaction with oxygen atoms released from the metal electrode.

Published
2017

9. Contributors

Author

Ambrogio, Stefano, Ando, Y., Bersuker, G., Bi, Chong, Blaise, Philippe, De Salvo, B., Deuermeier, Jonas, Dittmann, Regina, Endoh, T., Fukami, S., Gilmer, D.C., Goux, Ludovic, Hanyu, T., Harrand, Michel, Hoffmann-Eifert, Susanne, Hwang, Hyunsang, Hwang, Cheol Seong, Ielmini, Daniele, Ikeda, S., Kiazadeh, Asal, Koike, H., Koo, Yunmo, Larcher, Luca, Lim, Seokjae, Longo, Massimo, Ma, Y., Menzel, Stephan, Midya, Rivu, Mikolajick, Thomas, Molas, Gabriel, Nail, Cécile, Ohno, H., Padovani, Andrea, Park, Jaehyuk, Pavan, Paolo, Perniola, L., Puglisi, Francesco Maria, Rao, Mingyi, Sato, Noriyuki, Sato, H., Shirota, R., Song, Jeonghwan, Suzuki, D., Upadhyay, Navnidhi Kumar, Veksler, D., Vianello, E., Wang, Shan X., Wang, Zhongrui, Waser, Rainer, and Yang, J. Joshua

Published
2019
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11. (Invited) Resistive Memories (RRAM) Variability: Challenges and Solutions

Author

Molas, Gabriel, Sassine, Gilbert, Nail, Cecile, Alfaro, Diego, Nodin, Francois, Cagli, Carlo, Coignus, Jean, Blaise, Philippe, and Nowak, Etienne

Abstract

In this work, we address Resistive RAM (RRAM) variability. To this aim, we investigate various RRAM technologies (Oxide RAM and Conductive Bridging RAM), integrated on kb 1T1R arrays. Impact of variability is evaluated and discussed for various RRAM features: window margin, switching speed, consumption, retention and endurance. Solutions are proposed in order to improve overall RRAM performances. Optimized programming schemes are discussed. Importance of controlling the memory operation and programming energy to improve RRAM reliability is put in evidence.

Published
2018

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