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139 results on '"Nagahara, Seiji"'

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1. Advanced processes in metal-oxide resists for high-NA EUV lithography

3. Coater/developer-based patterning techniques to achieve tight pitches with 0.33 NA single exposure

4. Advanced development for contact-holes of metal-oxide resists

7. Advanced development methods for high-NA EUV lithography

8. Recent advances in EUV patterning in preparation towards high-NA EUV

9. Coater/developer-based techniques to achieve tight pitches towards high NA EUV

10. EUV Metal Oxide Resist Development Technology for Improved Sensitivity, Roughness and Pattern Collapse Margin for High Volume Manufacturing

11. Holistic litho-etch development to address patterning challenges towards high NA EUV

12. Coater/developer-based techniques to improve high-resolution EUV patterning

13. Metal oxide resist (MOR) EUV lithography processes for DRAM application

14. Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges

15. Approaches to enable patterning of tight pitches towards high NA EUV

16. Recent advances in EUV patterning in preparation towards high-NA EUV

17. Addressing EUV patterning challenges towards the limits of NA 0.33 EUV exposure

18. EUV resist performance enhancement by UV flood exposure for high NA EUV lithography

21. EUV resist chemical gradient enhancement by UV flood exposure for improvement in EUV resist resolution, process control, roughness, sensitivity and stochastic defectivity

22. Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges

23. Approaches to enable patterning of tight pitches towards high NA EUV

24. Advanced processes in metal-oxide resists for high-NA EUV lithography

25. PSCAR optimization to reduce EUV resist roughness with sensitization using Resist Formulation Optimizer (RFO) (Conference Presentation)

26. Calibrated PSCAR stochastic simulation

28. EUV resist sensitization and roughness improvement by PSCAR with in-line flood exposure system (Conference Presentation)

29. Constructing a robust PSCARTM process for EUV (Conference Presentation)

30. Defect dynamics in directed self-assembly of block copolymers (Conference Presentation)

33. Simulation and experimentation of PSCAR chemistry for complex structures

34. Photosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposure

35. EUV resist chemical gradient enhancement by UV flood exposure for improvement in EUV resist resolution, process control, roughness, sensitivity, and stochastic defectivity

36. Constructing a robust PSCARTM process for EUV.

38. Recent advances in EUV patterning in preparation towards high-NA EUV.

39. Advanced development methods for high-NA EUV lithography.

40. Advanced development for contact-holes of metal-oxide resists

41. Sensitivity enhancement of chemically amplified resists and performance study using extreme ultraviolet interference lithography

42. Novel high sensitivity EUV photoresist for sub-7nm node

43. Sensitivity enhancement of chemically amplified resists and performance study using EUV interference lithography

44. Challenge toward breakage of RLS trade-off for EUV lithography by Photosensitized Chemically Amplified Resist (PSCAR) with flood exposure

45. Novel High Sensitivity EUV Photoresist for Sub-7 nm Node

46. Calibrated PSCAR stochastic simulation

47. PSCAR optimization to reduce EUV resist roughness with sensitization using Resist Formulation Optimizer (RFO)

48. Driving DSA into volume manufacturing

49. Defect analysis methodology for contact hole grapho epitaxy DSA

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