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154 results on '"NEITZERT H. C."'

2. In Situ Stability Test of a Small Amorphous Silicon Energy Harvesting Array Under Space Conditions

Author

Neitzert, H. C., Landi, G., Lang, F., Bundesmann, J., Denker, A., Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zhang, Junjie James, Series Editor, Di Francia, Girolamo, editor, and Di Natale, Corrado, editor

Published
2021
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3. Precise measurement of the 7 Be electron capture decay half-life in silicon carbide.

Author

Santonastaso, C, Casali, N., Di Benedetto, L, Boldrini, V, Buompane, R., Canino, M, Carrano, V, Formicola, A, Gialanella, L, Laubenstein, M, Neitzert, H C, Pieruccini, M, Porzio, G, and Rubino, A

Subjects
ELECTRON capture, DETECTORS, ATOMS, MEASUREMENT
Abstract

In this work we present to our knowledge the most precise measurement of the 7Be electron capture decay half-life in a host material. A silicon carbide sample with ~8.62 × 1097Be atoms was measured for 83.5 d on an ultra-low background high purity Ge detector located deep underground in the Laboratori Nazionali del Gran Sasso, Italy. The result obtained for the decay half-life is T 1/2 = 53.284 ± 0.016 d, which corresponds to an uncertainty of 0.3‰. Thanks to the high sensitivity achieved, this measurement is paving the way to further investigations on this process aiming to understand how environmental conditions may affect the decay half-life. [ABSTRACT FROM AUTHOR]

Published
2025
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12. Influenza dell'ambiente sulla vita media del 7Be

Author

Santonastaso, C, Buompane, R, Gialanella, L, D'Onofrio, A, De Cesare, M., Di Leva, A, Fulop, Z, Gyurky, Gy, Landi, G, Morales-Gallegos, L, Marzaioli, F, Neitzert, H C, Porzio, G, Rapagnani, D, Roca, V, Rogalla, D, and Romoli, M

Subjects
SiC, Radioactive decay, Berillium7, electric field
Published
2020

23. Transport and noise spectroscopy of MWCNT/HDPE composites with different nanotube concentrations.

Author

Barone, C., Pagano, S., and Neitzert, H. C.

Subjects
ELECTRIC currents, POLYETHYLENE, CARBON nanotubes, EXTRUSION process, ELECTRIC properties, PERCOLATION, EQUATIONS
Abstract

Electrical current transport and low-frequency noise spectra of multiwall carbon nanotubes in high-density polyethylene matrix have been measured in a temperature range between 10 and 300K. The dc electrical investigations suggest that these composites can be regarded as a random resistor network, where the resistors are formed by tunnel junctions between carbon nanotubes. A crossover of the conduction from a low-field to a high-field regime is found in current-voltage characteristics. In particular, the high-field regime has a strong dependence on carbon nanotube concentration. Noise measurements reveal a standard 1/f behavior due to resistance fluctuations. However, in samples with different concentration of nanotubes, an unusual temperature dependence of the noise is observed. The samples with higher percentage of nanotubes seem to be the most promising ones for devices application, since their noise level is lower in the whole investigated temperature range. [ABSTRACT FROM AUTHOR]

Published
2011
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24. Measurement Setup for In-Situ Quantum Yield Characterization of Solar Cells during High Energy Particle Irradiation

Author

Neitzert, H. C., Carrano, V., Landi, G., and Gialanella, L.

Subjects
Degradation, Proton irradiation, Degradation, Space Cells, In-situ characterization, Proton irradiation, In-situ characterization, Characterisation & Simulation Methods, Silicon Photovoltaics, Space Cells
Abstract

33rd European Photovoltaic Solar Energy Conference and Exhibition; 911-913, nt spectra of solar cells under harsh measurement conditions without the need of optical windows or moving parts. The small photocurrent, induced by the sequential illumination by a series of LEDs with different emission wavelengths, distributed within the responsivity range of the tested solar cell, is converted to a proportional frequency and then monitored using the audio-card of a personal computer and an appropriate Labview-based Software. Subsequently the quantum yield measurements were performed in-situ during the irradiation of a conventional crystalline Silicon solar cell with 1.7 MeV protons in the spectral range between 400 nm and 880 nm. In this case the complete photocurrent spectrum can been monitored continuously with good temporal resolution.

Published
2017
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26. In-Situ Characterization of the Proton Irradiation Induced Degradation of Thin Film Liquid Phase Crystallized Silicon on Glass Based Heterojunction Solar Cells with Interdigitated Back Contacts

Author

Neitzert, H. C., Pellegrino, C., Landi, G., Bundesmann, J., Seidel, S., A. Denker, A., T. Frijnts, T., and Gall, S.

Subjects
Degradation, Thin Film Solar Cell, Silicon Photovoltaics, Thin Film and Foil-Based Solar Cells, Thin Film Solar Cell, Degradation, Space Cells, Space Cells
Abstract

33rd European Photovoltaic Solar Energy Conference and Exhibition; 811-814, pared, using Liquid Phase Crystallized (LPC) Silicon on glass technology, combined with the use of interdigitated back contacts in order to minimize reflection and shadowing losses. The solar cells have been exposed to a proton beam of 68 MeV, that creates a homogeneous depth profile of defects in the solar cells. A first partial irradiation of the solar cell created a very high local defect concentration and after a strong initial decrease of the short circuit current, the degradation almost saturates. A subsequently homogeneous irradiation of the whole solar cell area – however – resulted in a continuous further degradation of the investigated solar cell. The inhomogeneous defect concentration of the solar cell after this 2-step degradation has been evidenced by LBIC imaging.

Published
2017
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29. In situ measurements of changes in the structure and in the excess charge-carrier kinetics at the silicon surface during hydrogen and helium plasma exposure.

Author

Neitzert, H. C., Layadi, N., Roca i Cabarrocas, P., Vanderhaghen, R., and Kunst, M.

Subjects
*HYDROGEN, *PLASMA gases, *SILICON
Abstract

Presents a study that monitored in situ the damage induced by hydrogen and helium plasmas at the surface of crystalline silicon. Use of time-resolved microwave conductivity; Increase in the decay rate of the optically generated excess charge carriers; Decrease in the amplitude of the microwave reflection transients.

Published
1995
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30. In situ process evaluation during hydrogen plasma etching of a-Si:H films by microwave detected transient photoconductivity measurements.

Author

Neitzert, H. C., Hirsch, W., and Kunst, M.

Subjects
*PLASMA gases, *RECOMBINATION in semiconductors, *GEOMETRIC surfaces, *SILICON, *HYDROGEN
Abstract

Presents a study which investigated the impact of the plasma process on the surface recombination during the hydrogen plasma etching of a-silicon:hydrogen films. Details on the experiment; Results of the study; Conclusion.

Published
1993
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31. The influence of deposition temperature and annealing temperature on the optoelectronic properties of hydrogenated amorphous silicon films.

Author

Kunst, M. and Neitzert, H.-C.

Subjects
*OPTOELECTRONICS, *OPTICAL properties of amorphous semiconductors, *OPTICAL properties of metallic films
Abstract

Focuses on a study which examined the influence of deposition temperature and annealing temperature on the optoelectronic properties of hydrogenated amorphous silicon films. Information on the time resolved microwave conductivity method; Experimental procedures; Measurement of the relative effective mobility; Analysis of the decay behavior between films deposited at different temperatures.

Published
1991
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40. Determination of the Parameters of Floatzone Silicon Irradiated with High Energy Protons by Simulation of the Current-Voltage and Quantum Yield Characteristics

Author

Neitzert, H.-C. and Tucci, M.

Subjects
Solar Cells, Modules and PV Systems for Space Applications, Advanced Photovoltaics
Abstract

24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 704-706, Crystalline silicon solar cells using Floating Zone material have been exposed to high energy proton irradiation. In particular the impact of 1.7MeV protons with different fluence values up to 5.1012cm-2 on the currentvoltage characteristics with and without illumination and on the quantum yield characteristics has been investigated. An excellent agreement between experiment data and PC1D simulation has been achieved and allowed us to extract basic parameters device parameter changes due to irradiation. It has been found, that a initial fast degradation is found and a saturation of the proton induced damage is observed for fluence values above 1.1012cm-2. Key degradation parameter is the absorber region minority carrier effective diffusion length.

Published
2009
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47. HDPE/MWCNT COMPOSITE AS MICROWAVE ABSORBER.

Author

Di Giacomo, R. and Neitzert, H. C.

Subjects
*HIGH density polyethylene, *MULTIWALLED carbon nanotubes, *POLYMERIC composites, *POLYETHYLENE, *MICROFABRICATION, *CHEMICAL vapor deposition
Abstract

A HDPE/CNT composite has been fabricated based on a commercial polyethylene loaded with a high concentration of CVD grown multiwalled carbon nanotubes with a high aspect ratio. Exploiting the resulting high conductivity of this composite material, we tested the possibility to use it as absorber of electromagnetic waves at microwave frequencies up to 25 GHz. For this purpose the device under test was placed as substrate of a microstrip transmission line. Measurements of the scattering parameters, done with a vectorial network analyzer, have been used in order to obtain the power absorption at different frequencies. Special attention was paid to the optimization of the microstrip geometry. A comparison of the microwave power absorption spectrum with those of commercial cavity absorbers showed encouraging results, regarding the microwave absorption capability of the HDPE/CNT composite material. [ABSTRACT FROM AUTHOR]

Published
2014
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