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In this work, we employ the results of atomistic DFT calculation to extract useful parameters for the simulation of few-layers MoS2 structures with traditional TCAD tools. In particular, we focus on the charge distribution, which allows us to obtain a layered model for the dielectric constant, and on the effective densities of states in the conduction and valence bands taking into account the full 2D density of states. Using this model, we compute the capacitance of a metal–oxide–semiconductor structure and compare it to the one obtained employing a uniform model with averaged effective parameters., H2020-MSCA-IF-2019 Ref. 895322 (EU Horizon 2020 programme), TEC2017-89800-R (Spanish State Research Agency, AEI), Juan de la Cierva Incorporación Fellowship scheme 307 under grant agreement No. IJC2019-040003-I (MICINN/AEI)., P18-RT-4826 (Regional Government of Andalusia), B-TIC-515-UGR18 (University of Granada), CBUA/Universidad de Granada

This work was supported in part by the REMINDER European Project under Grant 687931; in part by the Ministry of Trade, Industry, & Energy (MOTIE)under Grant 10080526; and in part by the Korea Semiconductor Research Consortium (KSRC) Support Program for the development of future semiconductor devices., The electrical performance of Z2-FET and memory operations of matrix are demonstrated at high temperatures up to 125 ◦C. The sharp subthreshold slope is maintained and the reliable operation is ensured within the memory window of 229 mV even though the turn on voltage of ‘0’- and ‘1’-states are shifted to lower voltage. The ‘0’-state current remains low while the ‘1’-state current gradually increases as the temperature increases leading to higher current margin. At the elevated temperature, the potential barriers are slightly reduced but does not collapse, which leads to the successful memory operation. However, increasing the temperature over 125 ◦C, the potential barrier at the ‘0’-state is significantly reduced and causes the failure of memory operation with high ‘0’-state current. The matrix demonstrates reliable memory operations without using selector circuits even at 125 ◦C., REMINDER European Project 687931, Ministry of Trade, Industry, Energy (MOTIE) 10080526, Korea Semiconductor Research Consortium (KSRC)

This work has received funding from the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No 895322, from the Spanish Program (TEC2017-89800-R). SUPERA COVID-19 Fund and CRUE-Santander, Regional Program FEDER UGRVID (CV20-36685), P18-RT-4826 project and UGRMADOC CEMIX 2D-EDEX are also thanked for financial support, Grupo de Nanoelectronica, TIC216

Número de publicación: 2 770 473, Número de solicitud: 201831304, Procedimiento de detección de radiación y partículas empleando un diodo semiconductor por modulación de bandas de energía. La presente invención describe un procedimiento que permite la detección de partículas o radiación empleando un diodo por modulación de bandas de energía. La utilización de esta invención resulta especialmente interesante para detectar radiación incidente de partículas cargadas u ondas electromagnéticas, por lo que también son objeto de la invención los dispositivos para la detección de partículas o radiación, que comprenden al menos un diodo por modulación de bandas de energía y los medios necesarios para llevar a cabo la detección., Universidad de Granada