1. Suppression of dynamic disorder by electrostatic interactions in structurally close organic semiconductors
- Author
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Dmitry Yu. Paraschuk, N.V. Tukachev, Oleg G. Kharlanov, Marina S. Polinskaya, Olga D. Parashchuk, Dmitry I. Dominskiy, Oleg V. Borshchev, Andrey Yu. Sosorev, Dmitry R. Maslennikov, and Maxim S. Skorotetcky
- Subjects
Materials science ,Intermolecular force ,General Physics and Astronomy ,Benzothiophene ,02 engineering and technology ,Electron ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Electrostatics ,01 natural sciences ,Small molecule ,0104 chemical sciences ,Crystal ,Organic semiconductor ,symbols.namesake ,chemistry.chemical_compound ,chemistry ,Chemical physics ,symbols ,Physical and Theoretical Chemistry ,0210 nano-technology ,Raman spectroscopy - Abstract
Dynamic disorder manifested in fluctuations of charge transfer integrals considerably hinders charge transport in high-mobility organic semiconductors. Accordingly, strategies for suppression of the dynamic disorder are highly desirable. In this study, we suggest a novel promising strategy for suppression of dynamic disorder-tuning the molecular electrostatic potential. Specifically, we show that the intensities of the low-frequency (LF) Raman spectra for crystalline organic semiconductors consisting of π-isoelectronic small molecules (i.e. bearing the same number of π electrons)-benzothieno[3,2-b][1]benzothiophene (BTBT), chrysene, tetrathienoacene (TTA) and naphtho[1,2-b:5,6-b']dithiophene (NDT)-differ significantly, indicating significant differences in the dynamic disorder. This difference is explained by suppression of the dynamic disorder in chrysene and NDT because of stronger intermolecular electrostatic interactions. As a result, guidelines for the increase of the crystal rigidity for the rational design of high-mobility organic semiconductors are suggested.
- Published
- 2021
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