1. Enhanced room temperature mobilities and reduced parallel conduction in hydrogen passivated Si/SiGe heterostructures
- Author
-
V Venkataraman and M N V Raghavan
- Subjects
Materials science ,Hydrogen ,Passivation ,Annealing (metallurgy) ,Analytical chemistry ,chemistry.chemical_element ,Heterojunction ,Plasma ,Electrolyte ,Condensed Matter Physics ,Thermal conduction ,Electronic, Optical and Magnetic Materials ,chemistry ,Materials Chemistry ,Electrical and Electronic Engineering ,Order of magnitude - Abstract
The effect of hydrogen passivation on the room temperature mobility and density is studied on n-type $Si_{0.62}Ge_{0.38}$/strained Si modulation-doped structures. Room temperature carrier densities reduced by an order of magnitude while a threefold maximum increase in mobility was observed. By using a two-carrier analysis, it was found that, apart from parallel conduction passivation, the hydrogenation process also improves the channel mobility directly. Plasma and electrolytic hydrogenation were carried out on samples with different spacer thicknesses and mobilities. The plasma method of hydrogenation was found to be more effective when compared to the electrolytic technique. A successful removal of incorporated hydrogen and partial recovery of the control sample was shown by annealing the hydrogenated sample in vacuum at $\sim400^0C$.
- Published
- 1998
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