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There was an unprecedented opportunity to study the inner dust coma environments, where the dust and gas are not entirely decoupled, of comets 45P/Honda–Mrkos–Pajdus̆áková (45P/HMP) from 2016 December 26 to 2017 March 15, and 46P/Wirtanen from 2018 November 10 to 2019 February 13, both in visible wavelengths. The radial profile slopes of these comets were measured in the R and HB-BC filters most representative of dust, and deviations from a radially expanding coma were identified as significant. The azimuthally averaged radial profile slope of comet 45P/HMP gradually changes from −1.81 ± 0.20 at 5.24 days preperihelion to −0.35 ± 0.16 at 74.41 days postperihelion. Contrastingly, the radial profile slope of 46P/Wirtanen stays fairly constant over the observed time period at −1.05 ± 0.05. Additionally, we find that the radial profile of 46P/Wirtanen is azimuthally dependent on the sky-plane-projected solar position angle, while that of 45P/HMP is not. These results suggest that comets 45P/HMP and 46P/Wirtanen have vastly different coma dust environments and that their dust expansion properties are distinct. As evident from these two comets, well-resolved inner comae are vital for detailed characterization of dust environments.

We previously reported that oral administration of heat-killed Lactococcus lactis H61 improves certain human skin properties. For topical application of this strain, we reasoned that a bacterial cell extract obtained with an aqueous solvent could be readily formulated as a cosmetic ingredient. In the present study, we characterized the water extract from heat-killed H61. The extract had inhibitory activity for angiotensin-converting enzyme, which is known as suppression of inflammation of skin, and absorbed electromagnetic radiation in the UVB range. UVB-irradiated normal human epidermal keratinocytes (NHEKs) had lower viability than nonirradiated NHEKs. The NHEK survival rate was significantly higher in cells treated with the extract at 10 mg dried cells per ml prior to UVB exposure than in untreated cells or cells treated with lower extract concentrations. At this concentration, the extract also inhibited the production of interleukin-8 induced by UVB. The extract did not protect against hydrogen peroxide-induced cell damage. These data indicate that topical application of the H61 extract alleviates UVB damage and reduces inflammation in skin cells. The present study expands the potential application of strain H61 to its use as a cosmetic ingredient in addition to its use in the food industry. SIGNIFICANCE AND IMPACT OF THE STUDY: In our previous report, oral administration of heat-killed Lactococcus lactis H61 improved certain human skin properties. This study aimed exploring the potential topical use of this strain. The water extract derived from heat-killed cells with angiotensin-converting enzyme inhibitory activity, which is known as suppression of inflammation of skin, could protect normal human epidermal keratinocytes (NHEKs) from damage caused by UVB. Higher interleukin-8 production by UVB-exposed NHEKs than nontreated cells was suppressed by addition of the extract. The extract absorbed electromagnetic radiation in the UVB range. This extract could help in the maintenance of skin health by suppressing inflammation.

Objective: Previously, we showed that ingestion of fermented milk made by only Lactococcus lactis strain H61 (H61-fermented milk) improves various skin properties in young Japanese women (age, around 20 y). Because the condition of human skin varies with age, we investigated the effects of H61-fermented milk on skin properties of middle-aged women. Design and setting: A randomized, double-blind trial in a clinical research setting. Participants: Healthy, middle-aged, female volunteers (n = 23; age: 36–62 y). Intervention: H61-fermented milk (1010 CFU) or conventional yogurt (1010CFU of both Lactobacillus delbrueckii subsp. bulgaricus and Streptococcus thermophilus; a reference food) was given daily for 4 weeks. Measurements: Before and at the end of the 4-week treatment, we measured skin hydration (inner forearms and cheek) and sebum content (cheek only). In addition, salivary samples were collected for analysis of immune, stress, and inflammation biomarkers. Self-questionnaires (regarding skin and general health conditions) were done at week 4. Results: By mechanical analysis, the interventions did not alter the skin properties of either group. At week 4, self-questionnaire skin scores for elasticity and texture were significantly higher; scores for darkness tended to be improved in the H61-fermented milk group than the conventional yogurt group. In the general health condition section, diarrhea was significantly more prevalent in the H61-fermented milk than in the conventional yogurt group. The intervention did not alter immunoglobulin A, cortisol, α-amylase, and C-reactive protein levels in saliva. Conclusions: According to self-questionnaires, H61-fermented milk provides beneficial effects on some skin properties of middle-aged women. This intervention would be useful for increasing the quality of life in an aging population after characterizing the beneficial effect by mechanical analysis in future study.

Reactive oxygen species, such as superoxide, can damage cellular components, such as proteins, lipids, and DNA. Superoxide dismutase (SOD) enzymes catalyze the conversion of superoxide anions to hydrogen peroxide and dioxygen. SOD is present in most lactococcal bacteria, which are commonly used as starters for manufacturing fermented dairy products and may have health benefits when taken orally. We assessed the effects of carbohydrate use on SOD activity in lactococci. In Lactococcus lactis ssp. lactis G50, the SOD activity of cells grown on lactose and galactose was higher than that on glucose; in Lactococcus lactis ssp. cremoris H61, SOD activity was independent of the type of carbohydrate used. We also investigated the activity of NADH oxidase, which is related to the production of superoxide in strains G50 and H61. Activity was highest in G50 cells grown on lactose, lower on galactose, and lowest on glucose, whereas activity in H61 cells did not differ with the carbohydrate source used. The SOD and NADH oxidase activities of strain G50 in three carbohydrates were linked. Strain G50 fermented lactose and galactose to lactate, acetate, formate, and ethanol (mixed-acid fermentation) and fermented glucose to mainly lactate (homolactic fermentation). Strain H61 fermented glucose, lactose, and galactose to mainly lactate (homolactic fermentation). In strain G50, when growth efficiency was reduced by adding a metabolic inhibitor to the growth medium, SOD activity was higher than in the control; however, the metabolism was homofermentative. Aerobic conditions, but not glucose-limited conditions, increased SOD activity, and mixed-acid fermentation occurred. We conclude that the effect of carbohydrate on SOD activity in lactococci is strain dependent and that the activity of commercial lactococci can be enhanced through carbohydrate selection for mixed-acid fermentation or by changing the energy distribution, thus enhancing the value of the starter and the resulting dairy products.

It has recently been reported that the rare sugar d-allulose has beneficial effects, including the suppression of postprandial blood glucose elevation in humans, and can be substituted for sucrose as a low-calorie food ingredient. To examine the applications of d-allulose in the dairy industry, we investigated the effects of d-allulose on the acid production of 8 strains of yogurt starter (Lactobacillus delbrueckii ssp. bulgaricus and Streptococcus thermophilus) and 4 strains of lactococci, including potential probiotic candidates derived from dairy products. Acid production by 2 L. delbrueckii ssp. bulgaricus yogurt starter strains in milk was suppressed by d-allulose, but this phenomenon was also observed in some strains with another sugar (xylose), a sugar alcohol (sorbitol), or both. In contrast, among the dairy probiotic candidates, Lactococcus lactis H61, which has beneficial effects for human skin when drunk as part of fermented milk, was the only strain that showed suppression of acid production in the presence of d-allulose. Strain H61 did not metabolize d-allulose. We did not observe suppression of acid production by strain H61 with the addition of xylose or sorbitol, and xylose and sorbitol were not metabolized by strain H61. The acid production of strain H61 after culture in a constituted medium (tryptone-yeast extract-glucose broth) was also suppressed with the addition of d-allulose, but growth efficiency and sugar fermentation style were not altered. Probiotic activities-such as the angiotensin-converting enzyme inhibitory activity of H61-fermented milk and the superoxide dismutase activity of H61 cells grown in tryptone-yeast extract-glucose broth-were not affected by d-allulose. d-Allulose may suppress acid production in certain lactic acid bacteria without altering their probiotic activity. It may be useful for developing new probiotic dairy products from probiotic strains such as Lactococcus lactis H61.

In the dissolution step of the PUREX process, a sludge of zirconium molybdate can be generated from zirconium and molybdenum dissolved in the solution. In order to avoid accumulation of sludge, a new cleaning method using a mixture of nitric acid and hydrogen peroxide was developed. In this work, the cleaning method was verified using an irradiated fuel. Cubic crystals of the zirconium molybdate ZrMo 2 O 7 (OH) 2 were formed upon dissolution of an irradiated PWR fuel. The sludge deposition continued after the completion of the fuel dissolution. A small amount of fissile material was incorporated into the sludge. Although almost the same amount of insoluble residue was present, the sludge could be dissolved with a HNO 3 –H 2 O 2 solution at 80 °C within 5 h. The sludge formation on the clean Zr surface is inhibited.

The hyperinsulinemic-euglycemic clamp (EGC) technique was used to investigate the effects of calcium salts of long-chain fatty acids (LCFA-Ca) and rumen-protected Met (RPM) on insulin sensitivity in the peripheral tissues of lactating cows. Six multiparous Holstein cows were used in a 3 × 3 Latin square experiment in each 14-d period. Dietary treatments were 0 (RPM0), 20 (RPM20), and 60 (RPM60) g/d of RPM, supplemented with a diet containing 1.5% of LCFA-Ca equal to 110% of the cows' ME requirement. And as a control for the 3 LCFA-Ca-containing diets, a dietary treatment without LCFA-Ca (Con) was also included. After a 10-d adaptation period, milk samples were collected for 4 d, and EGC experiments were performed on d 14 of each treatment period. Insulin solution was infused through a jugular vein catheter at a rate of 0.1, 0.2, 0.3, and 0.4 milliunits·kg BW-1·min-1 for 30 min and then at a rate of 0.5 milliunits·kg BW-1·min-1 for 60 min. Glucose solution was variably infused to maintain plasma glucose at steady state through the same catheter. Blood samples for measurements were taken using the contralateral catheter. Plasma total cholesterol, cholesterol ester, free cholesterol, and phospholipid concentrations in RPM0 and RPM20 were higher than those in Con, whereas the concentrations in RPM60 were low at the same degree of those in RPM0 (P0.05). Plasma Met concentration was greatest in RPM60 (P0.05). In the EGC experiment, the glucose infusion rate was greater in RPM60 than in RPM0 and RPM20 and an effective concentration of insulin resulting in 50% maximal glucose infusion rate was lower in RPM60 compared with RPM0 (P0.05), indicating that insulin sensitivity was intensified in RPM60. Although the insulin sensitivity evaluated from the EGC data in RPM0, RPM20, and RPM60 was not different from Con, a slight decline was observed in RPM0 and insulin sensitivity in RPM60 was higher than Con. Our results from the EGC experiment demonstrated that the feeding RPM lead to increased insulin sensitivity, which suggests that dietary Met affects lipid metabolism via insulin action in lactating dairy cows fed a LCFA-Ca-containing diet.

We derive an explicit expression for the probability density function of the mth numerical derivative of a stochastic variable. It is shown that the proposed statistics can analytically be obtained based on the original probability characteristics of the observed signal in a simple manner. We argue that this allows estimating the statistical parameters of the original distribution and further, to simulate the noise contribution in the original stochastic process so that the noise component is statistically indistinguishable from the true contribution of the noise in the originally observed data signal.

Hydrogen is a key impurity in diamond since it is unintentionally incorporated in all chemical vapor deposition (CVD) grown diamond layers.Its presence in the material can grossly affect its electrical and optical properties.Theoretically, hydrogen has been predicted to be present in diamond in one of the three charge states, H , H and H .Moreover it may form complexes q 0 y with impurities, native defects or with other hydrogen atoms.This paper is comprised of two parts: (a) a review of previous results of studies investigating different aspects of the diffusion of hydrogen (deuterium) in various kinds of diamonds.The diamonds studied are: undoped type IIa diamonds, undoped CVD diamond layers containing growth defects only, p-type B-doped homoepitaxially CVD grown diamond layers or B ion implanted type IIa diamonds and n-type P doped homoepitaxially CVD grown diamond or N-doped type Ib natural diamonds.Hydrogen is introduced in diamond by exposing the diamond surface to hydrogen plasma or by using hydrogen ion implantation.The following issues are discussed: (1) the influence of the interaction between H and the dopants and defects on the hydrogen diffusion. (2) The kinetic of (B, H), (P, H ) and (N, H) pair formation and dissociation. (3) The modification of the optical and electrical properties as a result of hydrogen incorporation and annealing. It is found that, under certain conditions, H diffuses into the B containing layer and it passivates B acceptors.In contrast, no H diffusion could be observed in n-type diamonds, up to 1000 8C. (b) Recent results of our group regarding other aspects related to the diffusion of H in diamond are presented.These include results on: (i) the influence of ion implantation related defects on the diffusion of deuterium.For this study type IIa samples implanted with B or non-dopant ions are used. (ii) The determination of the charge state of H or Hydefects complex as a function of diamond type.For that, annealing under bias is applied to deuterated diamond layers.We show that the presence of implantation defects retards the deuterium diffusion in a B-implantation doped diamond, demonstrating that D strongly interacts with defects, thus inhibiting diffusion.The new-formed complexes deteriorate the electrical properties of the diamonds and are very stable up to high temperatures.We confirm that, as expected, in highly B-doped CVD diamond layers, H diffuses as a positive ion.In lightly B-doped homoepitaxial layers, however, D is incorporated in complexes which seem to be negatively charged. � 2003 Elsevier Science B.V. All rights reserved.

Certain physiological states and diseases can alter the expression and activity of cytochrome P450 s (CYPs), which have the potential to cause unexpected adverse effects. We previously demonstrated that lipopolysaccharide (LPS)-induced inflammation attenuates the induction of CYPs by xenobiotics in mouse liver. In this study, to investigate whether anaphylaxis-induced inflammation affects the hepatic CYPs' expression, we examined the effects of ovalbumin (OVA)-induced anaphylaxis on constitutive CYP mRNA and protein expressions. We also compared these effects with those obtained with LPS treatment. In addition, we examined the tumor necrosis factor (TNF) alpha and interleukin (IL)-113 mRNA levels, because these cytokines are known to be induced by LPS treatment and anaphylactic reactions. LPS treatment decreased the constitutively expressed Cyp1a2, Cyp2c29, and Cyp3al 1 mRNAs, and increased the TNFalpha and IL-1beta mRNAs. LPS treatment also decreased the CYP1A2 and CYP3A protein levels. Anaphylaxis, on the other hand, did not change the levels of the constitutively expressed Cyp1a2, Cyp2c29, or Cyp3a1 1 mRNAs, although it increased the TNFalpha and IL-1beta mRNAs, as observed in the LPS-treated mice. These results suggest that anaphylaxis-induced inflammation had less effect than LPS-induced inflammation on these CYPs in the liver. In contrast, we observed that the expressions of Cyp2b10 mRNA and its protein were quite different from those of the other CYPs in both the anaphylactic and LPS-treated mice. Our findings strongly suggest that the alteration of the constitutive CYPs' expression levels during inflammation varies according to the immunostimulation pathway.

Thermodynamically stable, low D/sub it/ amorphous Ga/sub 2/O/sub 3/-(100) GaAs interfaces have been fabricated by extending molecular beam epitaxy (MBE) related techniques. We have investigated both in situ and ex situ Ga/sub 2/O/sub 3/ deposition schemes utilizing molecular beams of gallium oxide. The in situ technique employs Ga/sub 2/O/sub 3/ deposition on freshly grown, atomically ordered (100) GaAs epitaxial films in ultrahigh vacuum (UHV); the ex situ approach is based on thermal desorption of native GaAs oxides in UHV prior to Ga/sub 2/O/sub 3/ deposition. Unique electronic interface properties have been demonstrated for in situ fabricated Ga/sub 2/O/sub 3/-GaAs interfaces including a midgap interface state density D/sub it/ in the low 10/sup 10/ cm/sup -2/ eV/sup -1/ range and an interface recombination velocity S of 4000 cm/s. The existence of strong inversion in both n- and p-type GaAs has been clearly established. We will also discuss the excellent thermodynamic and photochemical interface stability. Ex situ fabricated Ga/sub 2/O/sub 3/-GaAs interfaces are inferior but still of a high quality with S=9000 cm/s and a corresponding D/sub it/ in the upper 10/sup 10/ cm/sup -2/ eV/sup -1/ range. We also developed a new numerical heterostructure model for the evaluation of capacitance-voltage (C-V), conductance-voltage (G-V), and photoluminescence (PL) data. The model involves selfconsistent interface analysis of electrical and optoelectronic measurement data and is tailored to the specifics of GaAs such as band-to-band luminescence and long minority carrier response time /spl tau//sub R/. We will further discuss equivalent circuits in strong inversion considering minority carrier generation using low-intensity light illumination.

SUMMARY Human epidermis contains a phenotypically heterogeneous population of T cells. No information, however, is available regarding the TCR repertoire of these T cells and their relevant physiologic and pathologic functions in vivo. To this end, T cells were prepared from the lesional epidermis in two patients with fixed drug eruption (FDE) and their phenotype, function and TCR repertoire were examined in parallel. Both epidermal T cells, termed FDE-1 and -2 cells, respectively, expressed αβ TCR, but displayed some phenotypic heterogeneity. These T cells were induced to display cytolytic activity by ligation of the CD3/TCR-αβ complex. Comparative analyses of TCR Vα and Vβ expression in the epidermal T cells and the paired peripheral blood lymphocytes (PBL) by quantitative polymerase chain reaction (PCR) demonstrated that the epidermal T cells, but not the paired PBL, utilized a very limited range of Vα and Vβ genes. These results indicate that some expansion or preferential migration of epidermal T cells that recognize a restricted set of antigens expressed within the epidermis could occur in situ following ingestion of the causative drug. The persistence of these epidermal T cells in FDE lesions suggests their pathologic role in a drug-induced flare.

Properties of Ga2O3 thin films deposited by electron‐beam evaporation from a high‐purity single‐crystal Gd3Ga5O12 source are reported. As‐deposited Ga2O3 films are amorphous, stoichiometric, and homogeneous. Excellent uniformity in thickness and refractive index was obtained over a 2 in. wafer. The films maintain their integrity during annealing up to 800 and 1200 °C on GaAs and Si substrates, respectively. Optical properties including refractive index (n=1.84–1.88 at 980 nm wavelength) and band gap (4.4 eV) are close or identical, respectively, to Ga2O3 bulk properties. Reflectivities as low as 10−5 for Ga2O3/GaAs structures and a small absorption coefficient (≊100 cm−1 at 980 nm) were measured. Dielectric properties include a static dielectric constant between 9.9 and 10.2, which is identical to bulk Ga2O3, and electric breakdown fields up to 3.6 MV/cm. The Ga2O3/GaAs interface demonstrated a significantly higher photoluminescence intensity and thus a lower surface recombination velocity as compared to ...

Maturation of some T cell populations has been suggested to occur in epithelial tissues. The CD8 molecule, which is expressed as heterodimers made of alpha/beta-chains on virtually all peripheral T cells, is preferentially expressed as homodimers made only of alpha-chains on a subset of CD8+ mouse gut intraepithelial lymphocytes, which arise from bone marrow (BM) precursors in a thymus-independent mechanism. This unique population of CD8 alpha+ beta- T cells, however, has not been identified in other lymphoid tissues in normal adult mice. Because our previous study demonstrated that reconstitution of thymectomized irradiated mice with T cell-depleted BM cells resulted in the appearance of CD8+, TCR-alpha beta+ dendritic epidermal cells (DEC) and suggested that a proportion of the BM-derived DEC may mature within the epidermis, we asked whether the unique phenotype of CD8 alpha+ beta- could be detected among the CD8+ BM-derived DEC. In this report for the first time we identified this unique population of CD8 alpha+ beta- cells among the DEC. Although this population comprised the predominant fraction of the BM-derived DEC in the early post-transfer period (2 to 3 mo), gradual shift from the CD8 alpha+ beta+ phenotypes occurred during the late post-transfer period (4 to 6 mo) independently of the presence of the thymus. Kinetic studies on the BM-derived DEC revealed that this phenotypic shift could be caused by the subsequent expansion of the CD8 alpha+ beta+ DEC. In contrast, the CD8 alpha+ beta- population was the major subset of the BM-derived intraepithelial lymphocytes throughout the entire observation period and the phenotypic shift with age was never observed. These results indicate that CD8 alpha+ beta- cells are preferentially detected on T cells that home to the epithelial tissues and that in the epidermis, but not in the gut epithelia, the subsequent expansion of the CD8 alpha+ beta+ DEC would dilute the high number of the CD8 alpha+ beta- cells.

B diffusion in ${\mathrm{Si}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ge}}_{\mathit{x}}$ strained layers on Si was studied as a function of annealing temperature and Ge content and is shown to be characterized by lower diffusivity as compared to unstrained Si. The influence of the Ge content on the dopant diffusion was also measured, demonstrating that the diffusivity of the B atoms is reduced with increasing Ge fraction in the strained layer. The reduced diffusivity of B in the strained ${\mathrm{Si}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ge}}_{\mathit{x}}$ relative to the dopant diffusivity in unstrained Si is attributed to the change in the charged point-defect concentration caused by band-gap narrowing. We find good agreement between the measured and simulated diffusivity using the known band-gap for the strained layers.

The majority of murine Thy-1+ dendritic epidermal T cells (DETC) express virtually identical TCR encoded by V gamma 5 and V delta 1 genes and are derived from early fetal thymic precursors. However, not consistent with this notion is an early finding that DETC arise continuously from bone marrow (BM) precursors by a thymus-independent mechanism. To address this issue, donor-type DETC were characterized in lethally irradiated mice that were reconstituted by Thy-1-disparate BM cells with or without a thymus. The BM-derived DETC, unlike their normal TCR-gamma delta counterparts, were found to express the TCR-alpha beta/CD3 complex and CD8, and their migration to the epidermis dermis occurred independently of the thymus. The numbers of the BM-derived DETC increased with time and reached a plateau 6 mo after BM transfer, at which time the TCR-alpha beta/CD3 complex was expressed on a small fraction of the DETC in athymic BM chimeras. Although no further increase in the number was observed at later times, at 1 yr after transfer most of the BM-derived DETC came to express the TCR-alpha beta/CD3 complex in the absence of thymic influence. By contrast, most of BM-derived T cells in other lymphoid organs from athymic BM chimeras still failed to express the TCR-alpha beta/CD3 complex even at 1 yr after transfer. These results suggest that extrathymic differentiation of BM-derived DETC could occur with the epidermal microenvironment.

The effects of ion-implantation on both polysiloxane and silicate spin-on-glass thin films were studied and are reported here. The authors have shown, using various analysis techniques, that the damage induced by the implantation drastically modified the film properties. A pronounced volume shrinkage was observed in polysiloxane films after the implantation and a respective increase in the effective refractive index of the oxide layer was measured. An infrared transmission study of the samples suggests that the ion-implanted samples have fewer carbon-based components and less hydrogen than the unimplanted samples. Similar measurements using silicate-type spin-on-glass films have shown only a slight variation of the thickness, the refractive index, and the infrared transmission spectrum. Both material types change their etching characteristics in wet reagents after ion-implantation. The etch rate in HF solutions of the spin-on SiO[sub 2] materials was lowered after the implant, and occasionally an inhibition period before any etching could be observed. Metal-isolator-silicon (MIS) capacitors with spin-on oxide additionally were tested before and after the implantation and the results are reported and discussed here. Stress characterization indicates that a lower overall internal stress exists in the ion-implanted films compared to the as-deposited layers. Based on the results presented, the authors concludemore » that the ion-implantation densifies the spin-on SiO[sub 2] film and reduces the carbon content in the layer. They suggest that these material modifications are related to the radiation damage induced by the implantation and to a reordering state of the atomic structure during the implantation process.« less

A new, general, high quality smoothing algorithm is presented. It is based on a polynomial fitting of the real and imaginary components of the Fourier transformed spectra. Such fits, after inverse transformation into the real space, are shown to drastically reduce the statistical noise present in some experimental spectra and offer a fast and simple method for smoothing. The smoothing principles of this algorithm were applied, for demonstration of the quality of the fits which can be obtained, to Rutherford backscattering (RBS) and to particle induced X-ray emission (PIXE) spectra.

Although it is well known that in various T cell-mediated skin diseases T cells migrate preferentially to epidermis, no direct evidence has been presented in which molecules on T cells are important in directing T cell traffic to epidermis. We have previously established CD4+ autoreactive cloned T cells with a special tropism for epidermis in vitro as well as in vivo. Antibody inhibition studies demonstrated that only anti-lymphocyte function associated Ag 1 (anti-LFA-1) mAb completely inhibited the in vitro migration of the T cells toward the epidermis, whereas mAb against other T cell surface molecules had little or no effect. Monovalent F(ab) fragment of the anti-LFA-1 mAb, although less efficient, also inhibited the T cell migration. The apparent dependency of the inhibition on the anti-alpha-chain mAb suggested a major role for the alpha-chain of LFA-1 in T cell migration to epidermis. The relevance of an LFA-1-dependent mechanism to the epidermotropic migration of T cells was further strengthened by the findings that the T cell migration to epidermis was inhibited by divalent cation depletion, cytochalasin B, and low temperature. These findings indicate that the LFA-1 molecule, which is thought to be primarily involved in cell-to-cell adhesions, also plays an important role in directing T cell migration to epidermis.

The cutaneous graft-versus-host disease (GVHD) lesions induced by intradermal injection of cloned autoreactive T cells have been shown to subside rapidly and the epidermis returns to normal 2 wk after injection. Those mice that had spontaneously recovered from the cutaneous GVHD became resistant to subsequent attempts to induce the cutaneous GVHD by the T cells while maintaining their activity to mount delayed-type hypersensitivity (DTH) responses and to induce the enlargement of the popliteal lymph nodes (PLN). The resistance appeared to be restricted to the epidermal structures of the injection sites, suggesting the involvement of locally acting suppression mechanisms. This local resistance was not specific for the clonotype used for the induction of the resistance. A loss of the epidermal integrity by an attack of T cells capable of producing cutaneous GVHD was a prerequisite for the induction of the resistance. By up to at least 8 mo after injection of the T cells, no mice became susceptible to the cutaneous GVHD again, provided that the T cells were injected into the same footpad sites that had initially received the T cells. This resistance correlated well with the great increase (20-30-fold) in Thy-1+ EC number. The great increase in the number of Thy-1+ EC following destruction of epidermal structures may be important in protecting the epidermal integrity from an additional attack by T cells.

Using a neutral atom mass spectrometry we have measured the value and temperature dependence of the boron segregation coefficient at the strained $\mathrm{Si}/{\mathrm{Si}}_{0.8}{\mathrm{Ge}}_{0.2}$ interface. Segregation coefficients of 0.4 to 0.8 (Si/SiGe) are observed in the temperature range of 900 to 1200 K. The activation energy for the dopant segregation is measured to be 0.3 eV.

Selective implantation of 140 keV Co ions into self-supporting diamond films converts the surface into a conductive region at which redox electron transfer and metal deposition have been accomplished. Simple masking allows precise definition of the area to be plated within the insulating diamond matrix. Formation and electrochemical characterization of a rotating disk electrode in this manner are demonstrated.

We report the fabrication and device characteristics of a 50 /spl Aring/ thick dual-layer gate dielectric with high interface quality (D/sub it/ and Q/sub f/ /spl sim/10/sup 10/ cm/sup 2/) and capable of retarding boron penetration. This dual-layer dielectric is formed by low temperature CVD deposition of a /spl sim/40 /spl Aring/ thick oxynitride layer, through which slow O/sub 2/ diffusion is used to grow a /spl sim/10 /spl Aring/ thick SiO/sub 2/ at the interface. The small thickness of the SiO/sub 2/ layer reduces the oxidation time at high temperature, thus reducing the required thermal budget. The top oxynitride retards boron penetration and the thin SiO/sub 2/ layer provides a high quality interface. The channel mobility of NMOS devices with this dual dielectric is equal to the mobility of devices with a RTO dielectric grown at 950/spl deg/C. >

In-situ deposition of Ga/sub 2/O/sub 3/ films on clean, atomically ordered (100) GaAs surfaces has been investigated. Unique Ga/sub 2/O/sub 3/-GaAs interface properties including an interface state density in the mid 10/sup 10/ cm/sup -2/ eV/sup -1/ range and an interface recombination velocity of 4500 cm/s have been demonstrated. The formation of inversion layers in both n- and p-type GaAs has been clearly established. The Ga/sub 2/O/sub 3/-GaAs interface is characterized by thermodynamic and photochemical stability.

High‐quality InP layers with low impurity backgrounds have been grown by means of the rapid thermal low pressure metalorganic chemical vapor deposition technique, using tertiarybutylphosphine as the phosphorus source. The films were grown at a P:In ratio of 75 or higher, temperatures between 500 and 525 °C, a pressure of 2 Torr and growth rates as high as 2 nm/s. The undoped films were defect‐free with exhibited featureless morphologies, and minimum backscattering yields (Xmin) as low as 3.1%, measured by ion channeling. The electrical quality of the films (Nd=2.5×1016 cm−3, μ=4200 cm2/V s) was also excellent.

Rapid thermal low pressure metalorganic chemical vapor deposition (RT‐LPMOCVD) of lattice‐matched epitaxial In0.53Ga0.47As films onto InP substrates was successfully performed using tertiarybutylarsine (TBA) and growth temperatures in the range of 500–550 °C. The undoped, featureless films were grown with a low V:III ratio of 2, and exhibited an excellent morphology with a minimum backscattering yield (χmin) of 3.6% and narrow x‐ray full width at half‐maximum peak of 28 arcsec of the InGaAs layer on InP, reflecting a lattice mismatch of 0.02%. These films presented good electrical properties, with hole mobility values of about 75 cm2/V S measured at 300 K for nominally undoped layers with p≤5×1015 cm−3.

High purity Zn doped InP layers were grown by rapid thermal low pressure metalorganic chemical vapor deposition technique, using tertiarybutylphosphine as the phosphorus source. The best quality layer, which was grown at P:In ratio of 75, temperature as low as 525 °C, pressure of 2 Torr and growth rate of 2 nm/s, exhibited electron mobility of 80 cm2 V−1 s−1 and Hall carrier concentration of 3.5×1018 cm−3 at room temperature. The stoichiometry of the InP Zn‐doped layer was excellent, regardless of the Zn content in the reactive gas mixture. The crystallographic defect density and the surface morphological particle concentration, however, were found to be strongly dependent on the Zn concentration.

Self‐aligned, locally diffused W(Zn) contacts to InGaAs/InP structures were fabricated by means of rapid thermal low pressure metalorganic chemical vapor deposition (RT‐LPMOCVD), using a reactive gas mixture that contained diethylzinc (DEZn), WF6, H2, and Ar. W(Zn) layers of about 30 nm thick were deposited at 500 °C for 20 s and at a total pressure of about 2 Torr, onto InGaAs and InP. Spontaneous formation of highly doped underlying InGaAs and InP layers about 150 nm thick with Zn concentration levels higher than 1×1018 cm−3 took place through the deposition of the W(Zn) layers. Post‐deposition, in situ annealing at temperatures of 500 °C or lower enhanced the indiffusion of Zn into the underlying semiconductor and reduced the specific resistance of the W(Zn)/InGaAs contact to a minimum value of 5×10−6 Ω cm−2.

The reduction of radioactive waste volume is an important issue for the management of the nuclear fuel cycle. The purpose of this study is to create a technique to drastically reduce low-level liquid waste generated by a spent fuel reprocessing plant employing PUREX technology. In the PUREX plant, NOx gas is used as an oxidizing reagent for adjustment of the Pu valence in the Pu purification stage. The spent NOx gas is recovered as nitric acid and a certain amount of recovered nitric acid becomes low-level waste (LLW). As NOx gas is produced by the chemical reaction of nitric acid and sodium nitrite, a considerable quantity of non-radioactive sodium nitrate solution is discharged. From the standpoint of the impact on the environment, this discharge must be reduced. The objective of this research is to develop an electrolysis process by which NOx gas is directly produced from recovered nitric acid. Using this technology, the low-level sodium nitrate waste can be reduced and the nonradioactive sodium nitrate waste from the present NOx production process can be entirely eliminated. The study was performed in the following two steps: Phase 1: Fundamental research; Phase 2: Engineering study. Fundamental research: A study on the conditions of nitric acid decomposition by electrolysis was performed. The composition of NO and NO2 and its quantity are determined by electrolyte concentration, cathode material and current density. Catholyte reduced electrochemically is in a state of chemical equilibrium expressed by NO, NO2 (N2O4), HNO2, HNO3 and H2O. Nitric acid concentration, temperature and partial pressure of NOx are important process parameters since NOx generation current efficiency and NOx gas composition are dependent on a chemical equilibrium. Engineering study: The pilot plant was designed and constructed. The process configuration of the pilot plant is the same as that of the anticipated actual plant and its NOx generation capacity is one eighth of the actual plant. The plant mainly consists of electrolysis unit, NOx compression and storage unit, sodium nitrite oxidation unit, nitric acid distillation unit, and NOx recovery and off-gas treatment unit. NOx gas and HNO2 are generated as a result of nitric acid reduction in the electrolysis unit. NOx gas is transported under negative pressure to the compression/storage unit by a compressor and is stored in tanks under high pressure. After adjustment of gas composition by O2 supply, NOx gas is fed to the user process in the case of an actual plant. In the pilot test plant, NOx gas is transported to the nitric acid recovery step, in which NOx gas is recovered as nitric acid and reused in the pilot plant. As a result of operation of the pilot plant, the process performance, equipment performance, and long-term operation stability were proven. It was confirmed through the pilot plant operation that this technology was immediately applicable to a PUREX reprocessing plant.

The authors present a rare case of a persistent primitive hypoglossal artery (PHA) variant ending in the posterior inferior cerebellar artery (PICA) without an interposed segment of the basilar artery and describe briefly the possible embryogenesis of this anomaly.

The ion implantation of phosphorus into spin‐on‐glass (SOG) SiO2 thin‐film films modified the infrared transmission spectrum of the films. Two SOG types, polysiloxane and silicate, were ion implanted with doses in the 1×1014–1×1015 cm−2 range and an energy of 40 keV. The Fourier‐transform infrared spectrum of such films on silicon substrates was measured and the results are presented as a function of the implanted dose. The effect of the ion implantation on the silicate SOG was minute while significant changes were observed in the polysiloxane SOG. The major absorption peaks in the transmission spectrum were numerically analyzed and fitted to a set of Lorentzian functions. The peak heights, width, and area were measured. The ion implantation reduces the number of CH3 groups while the location of the Si‐O absorption peak is shifted towards a shorter wavelength, i.e., a denser material. A physical interpretation of the absorption peak dependence on the ion‐implanted dose is presented.

This work reports on the electrical properties of metal-oxide-semiconductor (MGS) capacitors made with a spin-on-glass (SGG) SiO, layer, doped with 2% phosphorus, deposited on InP substrate by spin casting followed by a low-temperature ( < 260 “C) anneal. The capacitance versus voltage behavior as well as the dielectric constant of the SOG layer was analyzed as a function of the frequency. The stability of the relevant parameters was checked after a long period of time (four weeks), compared with fresh devices, and revealed a significant increase in the dielectric constant and a slight increase in the leakage current. It is shown that the use of SOG as the dielectric material in the MOS structure leads to a relatively low fixed charge (less than 2x 10” cm - 2 1 and low fast state concentration. Indium-phosphide (InP) metal-insulator-semiconductor field-effect transistor (MISFETs) have important potential applications in high-frequency digital circuits, microwave power amplifiers, and monolithic optoelectronics circuits. High electron mobility (5200 cm/V s) and high saturation velocity (2.5 X 10’ cm/s) are the two key properties which make InP attractive for this application. The InP MISFETs can be readily configured for enhancement-mode operation, thus allowing low-power dissipation to be achieved in digital circuits. As a result of the insulated gate, a large dynamic range for the circuit can be achieved leading to a larger logic swing and consequently better noise margins. The larger breakdown voltage, higher thermal conductivity, and lower ionization coefficient compared to GaAs make InP a better choice for microwave power generation. The semi-insulating nature of InP makes circuit isolation easy and minimizes cross talk. InP is expected to play an important role in optical fiber telecommunications since the long-wavelength optical devices use InP as the substrate. The band-gap energy of InP-based alloys is near the wavelength of minimum loss in optical fibers. For example, monolithic integration of an InGaAs

Drastic changes in index of refraction and volume shrinkage of spin‐on‐glass films induced by P+ implantation are reported. An increase in refraction index (n) as large as 20% (from 1.38 to 1.79) has been measured following 1.6×1016 cm −2 implantations. The changes in n are accompanied by a volume shrinkage of similar magnitude. However, at doses exceeding ≊1015 cm−2 the shrinkage saturates while the index of refraction continues to increase indicating that material changes other than simple densification must be responsible for the observed rise in refractive index.

The regrowth of P‐ or Si‐implanted InP following thermal annealing (400–600 °C, 2–20 h) has been studied using Rutherford backscattering channeling experiments. Differences in damage annealing are consistently found between identically treated 29 Si‐ or 31 P‐implanted regions on the same sample, the former always being retarded. This retardation is suggested to be caused by stoichiometric imbalance due to the recoil kinematics, which is less severe for the case of the phosphorus implantation.

The antithrombotic and bleeding time (BT)-prolonging effects of TAK-029, a novel glycoprotein IIb/IIIa antagonist, were characterized and compared with those of conventional antithrombotic agents in guinea pigs. TAK-029 potently inhibited the binding of fibrinogen and von Willebrand factor to purified human GPIIb/IIIa with IC50 values of 0.67 +/- 0.03 and 0.33 +/- 0.04 nM; it also inhibited human platelet aggregation induced by various aggregating agents with IC50 values of 29 to 38 nM. The in vitro antiplatelet effect of TAK-029 was potent in humans, guinea pigs and monkeys. When TAK-029 was given p.o. to guinea pigs, severe prolonging of BT (1800 sec) was not observed with plasma concentrations of TAK-029 that inhibited ex vivo platelet aggregation by100%. The p.o. administration of TAK-029, ticlopidine and clopidogrel prolonged BT to the same extent, in parallel with their inhibition of ex vivo platelet aggregation. TAK-029 inhibited ex vivo platelet adhesion and thrombus formation in an arteriovenous shunt model more strongly than ticlopidine, clopidogrel and aspirin at doses causing similar prolongations of BT. In a balloon catheter-induced carotid thrombosis model, i.v. administration of TAK-029 significantly inhibited thrombus formation without prolonging BT. At doses that caused an incomplete antithrombotic effect, PGE1-alpha-cyclodextrin and argatroban produced hypotension and prolongation of BT, respectively. TAK-029 may be effective in patients suffering from arterial thrombotic diseases, which are refractory to these conventional antithrombotic agents.

The function of murine dendritic epidermal cells (dEC) remains largely speculative, probably because of the lack of a suitable in vivo model, although previous studies suggest that gamma/delta+ dEC may have originally evolved to serve as a self-protection mechanism(s). Our previous study demonstrated that the epidermis of mice that had spontaneously recovered from cutaneous graft-vs-host disease (GVHD) induced by local injection of CD4+ autoreactive T cells contained unexpectedly large numbers of dEC and became resistant to subsequent attempts to induce GVHD in a site-restricted manner, suggesting that the resistance is mediated by dEC. However, because alpha/beta+ dEC as well as gamma/delta+ dEC were greatly increased in number in the epidermis, it was unclear whether gamma/delta+ dEC are indeed responsible for this protection. The availability of this murine model and mice selectively lacking gamma/delta T cells as a result of disruption of the T cell receptor C delta gene segment allowed us to investigate the role of gamma/delta+ dEC. In the epidermis of gamma/delta T cell-deficient mice (delta-/-), a congenital lack of gamma/delta+ dEC was substituted for by alpha/beta+ dEC of either a CD4-8+ or a CD4-8- phenotype. After intradermal injection of the autoreactive T cells, delta-/- mice developed significantly enhanced delayed-type hypersensitivity responses and cutaneous GVHD, which persisted longer than in heterozygous littermate controls (delta+/-). Surprisingly, resistance to the cutaneous GVHD was not induced in the epidermis of delta-/- mice after spontaneous recovery from the GVHD, whereas the "susceptible" epidermis of delta-/+ mice contained large numbers of alpha/beta dEC comparable to those in "resistant" epidermis of delta+/- mice. Injection of day 16 fetal thymocytes from wild-type mice into delta-/- mice resulted in the appearance of donor-type gamma/delta+ dEC in the epidermis, and reconstitution with gamma/delta+ dEC restored the protective immune response of the epidermis against the GVHD to nearly normal levels. These results indicate that gamma/delta+ dEC are responsible for the site-restricted protection against cutaneous GVHD.

Soy sauce is a seasoning consumed widely in Southeast Asia. When supercoiled DNA was incubated with soy sauce at pH7.4 and 37 degrees C, extensive breaking of DNA single-strands was caused. It was found that the breaking activity was due to multiple components with different molecular weight and polarity. One of the components with the breaking activity was purified successively by extraction with ethyl acetate, thin-layer chromatography and high performance liquid chromatography, and identified as 4-hydroxy-5-methyl-3(2H)-furanone (HMF), one of the fragrant components in soy sauce. Formation of this component was found due to Maillard reaction of pentoses/amino acids. HMF was readily degraded into the compound with an endiol-ketol structure and reducing activity. Using 5,5-dimethyl-1-pyrroline N-oxide (DMPO) in an electron spin resonance-spin trapping technique, generation of hydroxyl radical in an aqueous solution of HMF was confirmed. While DNA breaking by soy sauce was little inhibited by the scavengers of active oxygen radicals, the breaking by HMF was effectively inhibited by superoxide dismutase, catalase, hydroxyl radical scavengers, spin-trapping agents, thiol compounds and metal chelating agents. Hence, DNA breaking activity of HMF was found due to generation of active oxygen radicals. HMF was found mutagenic to Salmonella bacteria without metabolic activation, probably due to generation of active oxygen radicals.

Chemical shift imaging is useful to obtain spectra of multiple contiguous voxels simultaneously and to demonstrate detailed mapping of metabolites. 31P magnetic resonance (MR) spectra of intracranial tumours are different from those of normal brain tissue. Low concentrations of total 31P, phosphocreatine (PCr) and phosphodiesters (PDE) were observed. Glioblastoma and malignant lymphoma showed a high concentration of phosphomonoester (PME). Glioblastoma, metastatic tumour, malignant lymphoma, epidermoid and chondrosarcoma showed a high concentration of inorganic phosphorus (Pi). Metabolite images demonstrated the extension of the abnormal intensity area, which was correlated with the extension of the tumour. Calculated images (Pi/ PCr, PME/PDE) were also useful for demonstrating tumour extension. A transient increase in Pi and acidic pH were noted after treatment.

Electrical characterization of MOS structures and device modeling require accurate information about dopant concentration, particularly at the poly-Si/SiO2 interface. We compare four experimental techniques (secondary ion mass spectrometry SIMS, resonant ion mass spectrometry RIMS, differential Hall effect profiling, and spreading resistance analysis) to measure boron and free carrier concentrations in poly-Si, SiO2 and crystalline Si. We find that no single technique completely characterizes the entire MOS structure, and that spreading resistance analysis in particular substantially underestimates the free carrier concentration at the poly-Si/SiO2 interface. We conclude that in most cases of technological interest the magnitude of the poly depletion effect scales with the average carrier concentration at some distance away from the interface and that the interfacial effects, such as dopant segregation, are of only secondary importance. These findings are supported by theoretical modeling of capacitance-voltage behavior of boron-doped MOS capacitors.

The mechanism(s) and the factor(s) that contribute to preferential localization of fixed drug eruption (FDE) lesions to certain skin sites remain speculative. Previous studies suggested that populations of T cells residing in the lesional epidermis may be involved in selective destruction of the epidermis in FDE. In this study, to define the earliest cellular and molecular events with potential relevance to activation of the epidermal T cells, expression of adhesion molecules on keratinocytes (KC) and vascular endothelium was examined sequentially in the lesional skin of FDE patients after challenge with the causative drug. Rapid and intense intercellular adhesion molecule-1 (ICAM-1) expression was induced on the vascular endothelium and KC as early as 1.5 hours after challenge, at which time E-selectin and vascular cell adhesion molecule-1 (VCAM-1) were not up-regulated. In vitro studies using skin organ culture showed that the lesional KC and endothelium responded more rapidly and intensely to express ICAM-1 to tumor necrosis factor-alpha or interferon-gamma compared with those in the nonlesional skin. Surprisingly, such selective induction of KC ICAM-1 restricted to the lesional skin was also observed after exposure to the causative drug alone in skin organ culture. Pretreatment of the lesional skin with anti-tumor necrosis factor completely abrogated in vitro induction of KC ICAM-1 expression by the drug. Drug-induced, TNF-alpha-dependent KC ICAM-1 expression in the lesional skin suggests that induction of ICAM-1 expression by the lesional KC after ingestion of the drug would probably provide a localized initiating stimulus for activation of the disease-associated epidermal T cells.

A sensitive sandwich enzyme immunoassay (e.i.a.) for serrapeptase (TSP), an orally available anti-inflammatory proteinase, was established using affinity-purified anti-TSP rabbit IgG and its Fab' fragment conjugated with horseradish peroxidase as the first and the second antibodies respectively. TSP in the plasma was determined by the e.i.a. after its oral administration (100 mg/kg) to rats. The peak concentration was observed between 30 min and 2 h after administration. TSP in the plasma samples was trapped on a microtitre plate coated with the affinity-purified anti-TSP rabbit IgG, and the hydrolysis of a synthetic fluorogenic substrate, butoxycarbonyl-Glu(benzyloxy)-Ala-Arg-4-methylcoumaryl-7-amide, by the trapped TSP was fluorometrically measured (proteinase assay). The values obtained by the e.i.a. and those obtained by the proteinase assay correlated well for various plasma samples. These results indicate that orally administered TSP was absorbed from the intestinal tract and transferred into the circulation in an enzymically active form.

Seventy-five patients with gastrointestinal cancer were entered in this study. The number of eligible cases were 38 in the group treated with sequential methotrexate (MTX)/5-fluorouracil (5-FU) with 5'-deoxy-5-fluorouridine (5'-DFUR) (group A) and 34 in the group without 5'-DFUR (group B). The treatment schedules were as follows: MTX/100 mg/m2 was given intravenously (i.v.) followed by 5-FU 600 mg/m2 i.v. 2 hours later and leucovorin 15 mg/body i.v. 8 and 20 hours later. This cycle was repeated once a week. In group A, 5'-DFUR 1,200 mg/body/day was given orally 5 consecutive days per week. Three of 35 cases in group A showed PR, while no case showed PR in group B. Median survival time was 5.0 months in group A and 5.3 months in group B, respectively. Gastrointestinal toxicity was commonly observed, and diarrhea was more frequent in group A (p0.05).

Small voids are formed in Si by MeV He implantation and annealing. We measure the equilibrium shape of these voids and hence extract the surface energy curve γ(θ) for Si. γ(111) is the global minimum, with γ(100)≃1.1 γ(111) and all other cusps on the surface being relatively small. The experimental γ(θ) is compared with theoretical predictions and earlier experiments. Step energies obtained from dγ/dθ are ≃28±10 meV/atom on (100) and ≃140±20 meV/atom on (111); these values are compared with scanning tunneling microscopy experiments

A systematic investigation of the behavior of Cd-implanted GaAs after rapid thermal annealing is presented. The use of various experimental techniques gives a detailed picture regarding the annealing process in the low-dose regime (10(12) and 10(13) cm-2) on a microscopic as well as on a macroscopic scale. Perturbed angular correlation experiments, using the radioactive probe Cd-111m, yield information on the immediate environment of the Cd implant on an atomic scale. Rutherford backscattering channeling and photoluminescence spectroscopy give complementary information concerning the overall damage level in the implanted layer, Hall measurements are used to determine the degree of electrical activation of the implanted Cd acceptors. The outdiffusion of the implanted radioactive Cd atoms is also investigated. The removal of defects in the next-nearest neighborhood of the Cd atoms takes place after annealing at 700 K and is accompanied by a general recovering of the crystal lattice. Between 600 and 900 K more distant defects are removed. The observed outdiffusion of about one-third of the dopant atoms after annealing above 600 K is discussed in context with their partial incorporation in extended defects. Although already at 700 K, 80% of the implanted Cd atoms are on substitutional lattice sites with no defects in their immediate environment, an annealing temperature in excess of 1000 K is necessary to obtain electrical activation of the implants. It is concluded that compensating defects, present in ion-implanted GaAs, are the reason for the significantly higher temperature required for electrical activation as compared to the incorporation of the dopants on defect-free, substitutional lattice sites.

Ethanol was injected intraperitoneally to dd-strain mice (20-25 g) with a dose of 5 g/kg body weight. The animals were sacrificed by the cervical dislocation at 4, 8, 12 and 24 hr after the ethanol injection. The changes of the ultrastructure of liver, heart, lung and kidney were examined by a transmission electron microscope. The results; from 4 hr to 24 hr after ethanol injection, deposition of fat droplets, swelling of mitochondria, enlargement of rough endoplasmic reticulum and loss of glycogen granules were observed in hepatocytes. Also, the edema of hepatocytes and intravascular hemostasis were found. These changes were aggravated with time course. In the heart, intravascular hemostasis, edema of myocardium, remarkable decrease of glycogen, swelling of mitochondria and appearance of I bands of myocardial fibers were observed. The damage to the myocardium by ethanol injection was similar to that associated with ischemia and anoxia. In the lung and the kidney, at early time after ethanol injection intravascular hemostasis and cell edema were observed but no other electron microscopical changes were found during the experiment. At 4 hr and 24hr after ethanol injection the edema of sinusoidal endothelial cell of liver and at 24hr that of endothelial cell of capillaries of heart were observed. These histological results suggest that the cell damages and intravascular hemostasis would be caused mainly by a direct action of ethanol. The damages of the liver and the heart, however, on the time blood ethanol was not detected would be caused by the disturbance of metabolism owing to ethanol oxidation.