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Our human observational study showed that elevated arginine vasopressin levels by heavy exercise, not catecholamines, were associated with elevated serum tartrate-resistant acid phosphatase 5b (TRACP-5b). The increase in serum calcium was positively associated with percent changes of TRACP-5b, implying the involvement of bone resorption in the pathogenesis of exercise-induced hypercalcemia. It remains unclear whether enhanced bone resorption explains exercise-induced hypercalcemia. An experimental study demonstrated that arginine vasopressin (AVP) stimulated osteoclast activity. We conducted a prospective observational study, enrolling 65 trained healthy male officers of the Japan Self-Defense Forces (34 and 31 in waves 1 and 2, respectively). Before and after a 5-h heavy exercise, we collected laboratory data including bone markers, symptoms, and ionized calcium (iCa; wave 2 only). As blood calcium levels change after exercise, we estimated calcium (corrected calcium) levels immediately after the exercise using the correlation between blood calcium and time from the end of exercise in another cohort. Body weight decreased by 6.9% after the exercise. Corrected post-exercise serum total calcium (tCa) and iCa levels were significantly higher than pre-exercise levels, and 18% of participants showed hypercalcemia defined as corrected tCa >10.4 mg/dL or iCa >1.30 mmol/L. Serum tartrate-resistant acid phosphatase 5b (TRACP-5b), plasma three fractions of catecholamines, and AVP elevated significantly (median 14.3 pg/mL), while procollagen type 1 N-terminal propeptide and whole parathyroid hormone showed significant decreases. Corrected tCa increase showed a non-linear positive association with percent changes of TRACP-5b (%ΔTRACP-5b) even after adjustment for confounders. In addition, %ΔTRACP-5b was not associated with catecholamines, but with post-exercise AVP levels after adjustment for pre-exercise TRACP-5b. Symptoms of nausea or vomiting (observed in 20%) were positively associated with corrected post-exercise iCa after adjustment for post-exercise blood pH. AVP elevation may explain bone resorption and the following hypercalcemia in the setting of heavy exercise.

A flying aircraft generates wake turbulence behind it from its wingtips. The stability of an aircraft will be affected if it encounters wake turbulence. Successive arrival aircraft at a runway have to maintain appropriate longitudinal separation between the leader and follower aircraft to avoid the effects of wake turbulence. The wake turbulence separation minima are applied via an air traffic controller’s instructions. Separation management imposes a high workload on air traffic controllers. To mitigate the workload for air traffic controllers, this study proposes a support algorithm for arrival separation management. The support algorithm provides an indicator for each aircraft. The indicator is calculated to maintain the arrival separation that matches the separation minima; hence, the arrival aircraft can maintain appropriate arrival separation if the air traffic controller adjusts the aircraft position to match the indicator. To review the capabilities of the support algorithm, a case study is conducted using actual flight data derived from radar data. The results show that the support algorithm can calculate the appropriate indicator near the runway threshold, but the indicator has errors in the initial phase of the arrival separation management. Finally, the paper discusses the error sources and the future directions for improving the support algorithm.

We report the enhancement in the electrical performance of solution-processed amorphous InZnO ( $a$ -IZO) thin-film transistors (TFTs) through incorporation of low-temperature photosensitive polysilsesquioxane (P-PSQ) passivation. P-PSQ passivated TFTs recorded smaller ${V}_{th}$ shift of 1.5 V after positive bias stress test despite annealing at 180°C. Analysis of secondary ion mass spectrometry and x-ray photoelectron spectroscopy showed that higher concentration of hydrogen reduced the amount of oxygen vacancies in the passivated IZO channel which promotes better stability against bias stress. Also, the time evolution of the ${V}_{th}$ was defined in which the activation energy for each sample was extracted. Passivated TFT also showed minimal change upon exposure to humidity test. Overall, low-temperature P-PSQ passivation is an effective barrier against atmospheric effects for solution-processed oxide TFTs.

The p-type conducting hydrogen-terminated diamond obtained from hydrogen plasma has several applications in the field of power semiconductor devices. Therefore, clarifying the effects and role of hydrogen plasma on diamond surfaces is a critical aspect in the field of hydrogen-terminated diamond devices. In this study, we focused on diamond surface etching by hydrogen plasma and revealed the dependence of the diamond crystal orientation using scanning probe microscopy and electron backscatter diffraction. Crystal grains with a low etching rate were distributed around the {100} and {111} planes, and those with a high etching rate were distributed on the {110} plane. Furthermore, we found that the etching rate increased as the intermediate orientation grains tilted toward the {110} plane. Because the surface carbon atoms that compose the {110} plane have two of their three back bonds on the surface exposed to hydrogen plasma, we expected that the {110} orientation would have a high etching rate. Even for grains with intermediate orientations, the etching tendency corresponded to the location of the back bonds. Our research provides important systematic data on the crystal orientation in diamond electronics.

Our human observational study showed that elevated arginine vasopressin levels by heavy exercise, not catecholamines, were associated with elevated serum tartrate-resistant acid phosphatase 5b (TRACP-5b). The increase in serum calcium was positively associated with percent changes of TRACP-5b, implying the involvement of bone resorption in the pathogenesis of exercise-induced hypercalcemia.It remains unclear whether enhanced bone resorption explains exercise-induced hypercalcemia. An experimental study demonstrated that arginine vasopressin (AVP) stimulated osteoclast activity.We conducted a prospective observational study, enrolling 65 trained healthy male officers of the Japan Self-Defense Forces (34 and 31 in waves 1 and 2, respectively). Before and after a 5-h heavy exercise, we collected laboratory data including bone markers, symptoms, and ionized calcium (iCa; wave 2 only). As blood calcium levels change after exercise, we estimated calcium (corrected calcium) levels immediately after the exercise using the correlation between blood calcium and time from the end of exercise in another cohort.Body weight decreased by 6.9% after the exercise. Corrected post-exercise serum total calcium (tCa) and iCa levels were significantly higher than pre-exercise levels, and 18% of participants showed hypercalcemia defined as corrected tCa10.4 mg/dL or iCa1.30 mmol/L. Serum tartrate-resistant acid phosphatase 5b (TRACP-5b), plasma three fractions of catecholamines, and AVP elevated significantly (median 14.3 pg/mL), while procollagen type 1 N-terminal propeptide and whole parathyroid hormone showed significant decreases. Corrected tCa increase showed a non-linear positive association with percent changes of TRACP-5b (%ΔTRACP-5b) even after adjustment for confounders. In addition, %ΔTRACP-5b was not associated with catecholamines, but with post-exercise AVP levels after adjustment for pre-exercise TRACP-5b. Symptoms of nausea or vomiting (observed in 20%) were positively associated with corrected post-exercise iCa after adjustment for post-exercise blood pH.AVP elevation may explain bone resorption and the following hypercalcemia in the setting of heavy exercise.

In this study, we have successfully demonstrated the 1μm pitch Cu-Cu hybrid bonding technology with remarkable electrical properties and reliabilities. 1μm pitch is world's finest class and is 3 times smaller than the connection pitch of our conventional Cu-Cu hybrid bonding technology. Moreover, the impacts of misalignment between upper Cu pad and lower Cu pad on contact resistance, electro-migration (EM) performance, leakage current and breakdown voltage were also investigated in such ultra-fine Cu-Cu hybrid bonding system.

High-k amorphous SrTa2O6 (STA) thin films were successfully deposited by rf magnetron sputtering for gate insulators in thin-film transistor (TFT). Practical STA thin films with high dielectric constant of 41.8, wide band gap of 4.58 eV, and low leakage current of ~10−8 A/cm2 were obtained through by optimal sputtering condition. The TFTs with amorphous InGaZnO (IGZO) as a channel and STA as a gate insulator were fabricated and investigated for thinning effects of gate insulator on transfer characteristic. The IGZO-TFT with 70-nm-thick STA achieved high performance switching properties; (mobility of 14.9 cm2/(V·s), threshold voltage of 0.6 V, sub-threshold swing of 111 mV/decade, and on/off ratio of 1.0 × 1010). These characteristics are due to the large gate capacitance of 4.6 × 10−7 F/cm2 and low gate leakage current from use of STA.

Self-heating degradation in semiconductor devices generated by driving voltage is a serious problem in the development of highly reliable products. This letter focuses on oxide semiconductors, as a representative of flexible devices on which thermal accumulation on the substrate is critical. We propose a heat-suppressing thin-film transistor (TFT) structure to improve the reliability of transparent amorphous oxide semiconductor TFTs. Findings from this letter indicate that a structure with a curved line, such as a Corbino disk, is effective for suppressing self-heating. Based on these results, we suggest a U-shaped TFT as a heat-suppressing structure and demonstrate its device simulation and thermal analysis.

We developed a back-illuminated InGaAs image sensor with 1280x1040 pixels at 5-um pitch by using Cu-Cu hybridization connecting different materials, a III-V InGaAs/InP of photodiode array (PDA), and a silicon readout integrated circuit (ROIC). A new process architecture using an InGaAs/InP dies-to-silicon wafer and Cu-Cu bonding was established for high productivity and pixel-pitch scaling. We achieved low dark current and high sensitivity for wavelengths ranging from visible to short-wavelength infrared (SWIR).

The reliability of oxide semiconductor TFT and the method to lower the process temperature have become serious problems. In order to solve these problems we have developed inductively coupled plasma sputtering equipment that can control the Radio Frequency (RF) power to generate Inductively Coupled Plasma (ICP) and the voltage applied to the sputtering target independently. Using this equipment, we can deposit high-density oxide semiconductor films at room temperature and fabricate highly reliable TFTs with them.

Low temperature process is required to fabricate high performance amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) on plastic substrates for flexible display applications. In addition, high-k material which allows higher mobility, higher drain current and lower threshold voltage while facilitating miniaturization, is poised to replace conventional SiO 2 gate insulators in TFTs. Therefore, hybrid material containing high-k BaTiO 3 nanoparticles and transparent Poly-siloxane (Poly-SX) were used as gate insulator in a-IGZO TFTs. Opting for a hybrid material instead of only a BaTiO 3 film enables lowering of process temperatures. This paper presents the performance of a-IGZO TFTs with solution processed hybrid gate insulators at different BaTiO 3 /Poly-SX ratios deposited at a lower temperature (300°C). The device shows a high mobility of 30.17 cm2/Vs, low threshold voltage of 0.4 V, and leakage current density of ~10−8 A/cm2.

Thermal reaction between thallium oxide (Tl2O3) and zinc oxide (ZnO), tin oxide (SnO2) or indium oxide (In2O3) annealed at 600 °C for 18 h in the air atmosphere was investigated. From XRD results of 600 °C annealed samples, Tl2O3 had the biggest reactivity compared with ZnO. The EDX results suggest the mechanism in which the thallium atoms scattered and attached uniformly only on ZnO particles. We also analyzed XPS data to compare O 1s bond and Tl 4f bond of as-mixed samples with that of annealed samples, and found that Zn and Sn can contribute in improving Tl and O bonding stability. However, the affinity of In for Tl is weaker than that of Zn or Sn. Finally, we prepared the samples mixed with ZnO, SnO2, and Tl2O3 powder and the samples mixed with Zn2SnO4 and Tl2O3 powder annealed at 600 °C for 18 h. Results show that Zn2SnO4 has the same or more reactivity than SnO2 and ZnO mixed particle despite of the more stable and sufficient dispersion of Zn and Sn atoms. More stable TlSnZnO can be fabricated from Zn2SnO4 + Tl2O3 powder by suitable thermal processes. It is expected that TlSnZnO sputtering target can be fabricated by suitable calcination.

Amorphous indium gallium zinc oxide thin-film transistors have attracted growing interest due to its low energy consumption, possibility of low temperature fabrication and transparency. However, it still has technological problems on reliability and hump due to hydrogen related materials. To solve these problems, we made siloxane passivation layer with less OH bond using spin coating technique and carried out the bias stress testing. TFTs passivated by less OH siloxane show excellent reliability compared with high OH bond condition which showed large hump effect on each tests of positive bias stress and negative bias stress. We achieved the stable device using an organic-inorganic hybrid material by controlling OH bond, and we found that the amount of OH in the passivation layer is a key issue in oxide TFTs reliability.

For flexible display applications, high performance amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) fabricated by low temperature process are required. Moreover, high dielectric constant (high-k) material which enables higher mobility and lower threshold voltage while minimizing the device size are excellent candidates to replace SiO2 gate insulators in conventional oxide semiconductor TFTs. Therefore, nanocomposite material containing high-k BaTiO3 nanoparticles and transparent poly-siloxane (PSX) hybrid polymer were deposited as gate insulator in a-IGZO TFTs to facilitate the reduction of process temperature due to the high temperature requirement (>650 oC) of BaTiO3. This paper presents the performance and analysis of a-IGZO TFTs with high-hybrid gate insulators at different ratios of BaTiO3/PSX deposited by solution process at a lower temperature (300 oC). The TFT shows a high mobility of 35.59 cm2 V−1 s−1, low threshold voltage of 0.4 V, and gate leakage current of ~10−10 A.

The interaction between ambient environment or the adsorption-desorption of oxygen and water molecules at the back channel of bottom gate amorphous InZnO (a-IZO) thin-film transistors (TFTs) is one of the biggest issues that greatly affects the performance and reliability of TFTs. The issue can be overcome by depositing a passivation at the back channel as a protection barrier. This paper presents the performance of solution processed a-IZO TFTs incorporated with different types of Polysilsesquioxane (PSQ) passivation layers fabricated at low temperatures of 180 °C. A clear reliability enhancement is observed by using the low temperature PSQ which reduced the very high threshold voltage shift ( $V_{th}$ ) of 16.0 V after positive bias stress (PBS) of unpassivated a-IZO TFT to a low $V_{th}$ of 3.1 V after passivation.

This report shows that an amorphous a-InGaZnO (IGZO) thin film transistor (TFT) can control the threshold voltage ( $V_{th}$ ) without thermal annealing process when depositing a-IGZO using an inductively coupled plasma (ICP) sputtering system. A two layer a-IGZO TFT with controlled oxygen concentrations was fabricated using the ICP sputtering system developed for high density thin film deposition. As a result of evaluation of TFT characteristics, a-IGZO TFTs with changed $V_{th}$ could be fabricated without a thermal annealing process.

The emphasis on ubiquitous technology means that future technological applications will depend heavily on transparent conducting materials. To facilitate truly ubiquitous applications, transparent conductors should be fabricated at low temperatures (

We have successfully mass-produced novel stacked back-illuminated CMOS image sensors (BI-CIS). In the new CIS, we introduced advanced CuCu hybrid bonding that we had developed. The electrical test results showed that our highly robust CuCu hybrid bonding achieved remarkable connectivity and reliability.

This study attempted to classify three coniferous and ten broadleaved tree species by combining airborne laser scanning (ALS) data and multispectral images. The study area, located in Nagano, central Japan, is within the broadleaved forests of the Afan Woodland area. A total of 235 trees were surveyed in 2016, and we recorded the species, DBH, and tree height. The geographical position of each tree was collected using a Global Navigation Satellite System (GNSS) device. Tree crowns were manually detected using GNSS position data, field photographs, true-color orthoimages with three bands (red-green-blue, RGB), 3D point clouds, and a canopy height model derived from ALS data. Then a total of 69 features, including 27 image-based and 42 point-based features, were extracted from the RGB images and the ALS data to classify tree species. Finally, the detected tree crowns were classified into two classes for the first level (coniferous and broadleaved trees), four classes for the second level (Pinus densiflora, Larix kaempferi, Cryptomeria japonica, and broadleaved trees), and 13 classes for the third level (three coniferous and ten broadleaved species), using the 27 image-based features, 42 point-based features, all 69 features, and the best combination of features identified using a neighborhood component analysis algorithm, respectively. The overall classification accuracies reached 90 % at the first and second levels but less than 60 % at the third level. The classifications using the best combinations of features had higher accuracies than those using the image-based and point-based features and the combination of all of the 69 features., Article, The International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences.XLII-3/W3:33-38(2017)

PR10-1 Detection of D-Aspartyl Endopeptidases Activity in Floral Tissues of Broccoli (Brassica oleracea var. Italica). Kinouchi T. Fujii N., PR10-2 Damage to Biological Molecules Induced by Ionizing Irradiation and Biological Defense Mechanisms against Ionizing Radiation I. Saito Takeshi Fujii Noriko, PR10-3 Analysis of Aspartate Isomerization Using Protein L-Isoaspartyl Methyltransferase (PIMT). Sadakane Y. Fujii N., PR10-4 Analysis of Imbalance in Mice Exposed to Environmental Stress. Ohgami Nobutaka Fujii Noriko, PR10-5 Identification of Biologically Uncommon β-aspratyl Residues in Proteins Using MS. Fujii N. Kishimoto S. Fujii N., PR10-6 Side Chain Conformers of Aspartyl Isomers in Crystallin Mimic Peptide. Aki K. Okamura E., PR10-7 Rapid survey of Asp isomers in disease-related proteins by LC-MS/MS combined with Commercial Enzymes. Maeda Hiroki Takata Takumi Fujii Norihiko Sakaue Hiroaki Sasaki Hiroshi Fujii Noriko

The present study investigates the human leucocyte antigen (HLA) allele and haplotype frequencies in Japanese population. We carried out the frequency analysis in 5824 families living across Japanese archipelago. The studied population has mainly been typed for the purpose of transplant, especially the hematopoietic stem cell transplantation (HSCT). We determined HLA class I (A, B, and C) and HLA class II (DRB1) using Luminex technology. The haplotypes were directly counted by segregation. A total of 44 HLA‐A, 29 HLA‐C, 75 HLA‐B, and 42 HLA‐DRB1 alleles were identified. In the HLA haplotypes of A‐C‐B‐DRB1 and C‐B, the pattern of linkage disequilibrium peculiar to Japanese population has been confirmed. Moreover, the haplotype frequencies based on family study was compared with the frequencies estimated by maximum likelihood estimation (MLE), and the equivalent results were obtained. The allele and haplotype frequencies obtained in this study could be useful for anthropology, transplantation therapy, and disease association studies.

We investigated the effects of the passivation layer on the characteristics of amorphous InGaZnO4 thin-film transistors (a-InGaZnO TFTs) by comparing AlOx film by thermal atomic layer deposition (TALD-AlOx) with SiOx film by plasma enhanced chemical vapor deposition (PECVD-SiOx). The PECVD-SiOx TFTs before and after final annealing exhibited conductive and hump characteristics, respectively. In contrast, both TALD-AlOx TFTs before and after final annealing exhibited enhancement characteristics. From secondary ion mass spectroscopy analysis, we found that TALD-AlOx effectively suppresses H injection into the underneath of the a-InGaZnO layer compared with PECVD-SiOx. We believe such suppression of H injection leads to the enhancement characteristics of TALD-AlOx TFTs. On the other hand, the conductive and hump characteristics of PECVD-SiOx TFTs may be attributed to a higher concentration of H injected into the a-InGaZnO layer and ion bombardment due to PECVD. From these results, we argue that plasma-free TALD-AlOx is effective for achieving good characteristics in a-InGaZnO TFTs. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0231507jss] All rights reserved.

We found that high pressure assisted annealing with water vapor (HPV) is effective for improving the field effect mobility ofamorphousindium-gallium-zincoxide(a-IGZO)thinfilmtransistors(TFTs).TheHPV-annealedTFTsexhibitedbetterperformancein field effect mobility compared with dry annealing under atmospheric pressure. Secondary ion mass spectroscopy (SIMS) analysisrevealed that the hydrogen content increased through the whole a-IGZO film, despite the oxygen content increasing only within20 nm depth from the a-IGZO surface. Consequently, hydrogen can affect front channel components and improve the field effectmobility of TFTs.© 2014 The Electrochemical Society. [DOI: 10.1149/2.011409jss] All rights reserved.Manuscript submitted May 16, 2014; revised manuscript received July 29, 2014. Published August 6, 2014.