1. Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
- Author
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Németh, Róbert, Bandaru, Vatsal K., Alves, Pedro, Losert, Merritt P., Brann, Emma, Eskandari, Owen M., Soomro, Hudaiba, Vivrekar, Avani, Eriksson, M. A., and Friesen, Mark
- Subjects
Quantum Physics ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Conveyor-mode shuttling is a key approach for implementing intermediate-range coupling between electron-spin qubits in quantum dots. Initial shuttling results are encouraging; however, long shuttling trajectories are guaranteed to encounter regions of low conduction-band valley energy splittings, due to the presence of random-alloy disorder in Si/SiGe quantum wells. Here, we theoretically explore two schemes for avoiding valley-state excitations at these valley minima, by allowing the electrons to detour around them. The multichannel shuttling scheme allows electrons to tunnel between parallel channels, while a two-dimensional (2D) shuttler provides full omnidirectional control. Through simulations, we estimate shuttling fidelities for these two schemes, obtaining a clear preference for the 2D shuttler. Based on these encouraging results, we propose a full qubit architecture based on 2D shuttling, which enables all-to-all connectivity within qubit plaquettes and high-fidelity communication between plaquettes., Comment: 12 pages, 4 figures
- Published
- 2024