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8 results on '"Myoung, Seung Joo"'

3. Improvement of the symmetry and linearity of synaptic weight update by combining the InGaZnO synaptic transistor and memristor

Author

Yang, Tae Jun, primary, Cho, Jung Rae, additional, Lee, Hyunkyu, additional, Lee, Hee Jun, additional, Myoung, Seung Joo, additional, Lee, Da Yeon, additional, Choi, Sung-Jin, additional, Bae, Jong-Ho, additional, Kim, Dong Myong, additional, Kim, Changwook, additional, Woo, Jiyong, additional, and Kim, Dae Hwan, additional

Published
2024
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4. Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors

Author

Yang, Tae Jun, primary, Kim, Je-Hyuk, additional, Ryoo, Chang II, additional, Myoung, Seung Joo, additional, Kim, Changwook, additional, Baeck, Ju Heyuck, additional, Bae, Jong-Uk, additional, Noh, Jiyong, additional, Lee, Seok-Woo, additional, Park, Kwon-Shik, additional, Kim, Jeom-Jae, additional, Yoon, Soo-Young, additional, Kim, Yoon, additional, and Kim, Dae Hwan, additional

Published
2023
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8. Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for VT Prediction Using Lateral Carrier Density Profiling Technique

Author

Myoung, Seung Joo, Ryoo, Chang Il, Kim, Changwook, Choi, Sung-Jin, Kim, Dong Myong, Bae, Jong-Ho, and Kim, Dae Hwan

Abstract

To establish a thermal process and corresponding dopant diffusion model to predict the properties of a-InGaZnO (a-IGZO) TFTs, the dopant distribution along the a-IGZO channel after thermal process is analyzed and modeled in detail. Considering that the thermal process induces diffusion of the dopants and changes carrier density ( ${n}{(}{y}{)}{)}$ in the a-IGZO film along the channel length direction ( ${y}{)}$ , the lateral diffusion coefficient ( ${D}_{y}{)}$ according to the post-annealing temperature ( ${T}_{\text {post}}{)}$ is extracted. Consistency of the measured and simulated ${V}_{\text {T}}$ of a-IGZO TFTs is confirmed for ${T}_{\text {post}}$ from 353 K to 573 K, indicating that ${n}{(}{y}{)}$ and ${V}_{\text {T}}$ changes during annealing are predictable. The results can become a cornerstone of a-IGZO TFT process simulation and suggest the possibility of precise modulation of ${V}_{\text {T}}$ of a-IGZO TFTs by controlling the annealing conditions.

Published
2023
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