156 results on '"Murao Y"'
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2. Electrical properties of the binary icosahedral quasicrystal and its approximant in the Cd–Yb system
3. Order–disorder transition in cubic Cd 6Yb and Cd 6Ca
4. Field evaluation and safety management of ImPACT tough robotics challenge
5. A concept of JAERI passive safety light water reactor system (JPSR)
6. Interfacial shear stress in stratified flow in a horizontal rectangular duct
7. Channeling of implanted 75As+ through Mo films.
8. Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies
9. ChemInform Abstract: Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel Interconnections.
10. HYPERTONIC SALINE RESUSCITATION REDUCES DAMAGE OF THE LIVER IN THE MOUSE MODEL OF HEMORRHAGIC SHOCK
11. THE EFFECT OF HYPERTONIC SALINE RESUSCITATION ON APOPTOSIS AND HEAT SHOCK PROTEINS IN THYMUS AND SPLEEN AFTER HEMORRHAGIC SHOCK IN MICE.
12. Order–disorder transition in cubic Cd6Yb and Cd6Ca
13. A motion base with 6-DOF by parallel cable drive architecture
14. HYPERTONIC SALINE RESUSCITATION REDUCES THE APOPTOSIS AND DAMAGE TO SMALL INTESTINE AFTER HEMORRHAGIC SHOCK IN MICE.
15. 1A1-G7 Creation of Path of a 6-Degree-of-Freedom Motion Base Using Parallel Cable Drive Architecture
16. Deep Subhalf‐Micron Contact Filling Technology Using Control Etching and Collimated Ti Sputtering Techniques
17. Thermal fluid flow analysis in downcomer of JAERI passive safety light water reactor (JPSR)
18. A concept and safety characteristics of JAERI passive safety reactor (JPSR)
19. Critical heat flux experiments under steady-state and transient conditions and visualization of CHF phenomenon with neutron radiography
20. An asymmetric sidewall process for high performance LDD MOSFET's
21. ChemInform Abstract: A Spin‐on‐Glass Film Treatment Technology Using a Fluoroalkoxysilane Vapor at Room Temperature.
22. Large-scale multi-dimensional phenomena found in CCTF and SCTF experiments
23. Modeling of reflooding
24. Stability of a new polyimide siloxane film as interlayer dielectrics of ULSI multilevel interconnections
25. A 7-mask CMOS process with selective oxide deposition
26. 0.4 μm Contact with Lower Resistivity Metallization Technology for ULSI Applications
27. A room temperature CVD technology for interlayer in deep-submicron multilevel interconnection.
28. A 7 mask CMOS-technology utilizing liquid phase selective oxide deposition.
29. A high performance CMOS technology with Ti-Silicided p/n-type poly-Si gates.
30. Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film.
31. Effect of hypertonic saline resuscitation on CD4+CD25+ regulatory T cells and gammadelta T cells after hemorrhagic shock and resuscitation in relation to apoptosis and iNOS.
32. A new interlayer formation technology for completely planarized multilevel interconnection by using LPD
33. A high-speed 1-Mbit EPROM with a Ti-silicided gate.
34. Preparation of Microspheres of Poly(Glycidyl Methacrylate) and its Derivatives as Carriers for Immobilized Proteins.
35. Polymer Microbeads Bound to C3 Fragments for Detecting and Labeling Cells with C3 Receptors.
36. A 100 NSEC 256K Dynamic RAM.
37. Degradation and improvement of deep sub-micron contact metallization using selective tungsten CVD.
38. Channeling of implanted 75As+through Mo films
39. An analytical study of the thermo-hydrodynamic behavior of the reflood-phase during a LOCA
40. High Speed 1 K Bit Static RAM using DSA MOST's
41. A High-Speed 1-Mbit EPROM with a Ti-Silicided Gate
42. ChemInform Abstract: Photochromism of Salicylideneaniline (I) Incorporated in a Langmuir‐Blodgett Multilayer.
43. Complement activation by polymer binding IgG
44. Identification of Melamine and Urea Resins in Wet Strength Paper
45. STUDIES ON THE MANUFACTURE OF WET STRENGTH PAPER
46. A parallel cable-driven motion base for virtual acceleration
47. A motion base with 6 degrees of freedom by parallel cable drive architecture
48. Adhesion layerless submicron Al damascene interconnections using novel Al-CVD.
49. A new interlayer formation technology for completely planarized multilevel interconnection by using LPD.
50. A high performance asymmetric LDD MOSFET using selective oxide deposition technique.
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