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We demonstrate gate-tunable giant field-dependent nonreciprocal transport (magnetochiral anisotropy) in a noncentrosymmetric superconductor $T_{\rm d}$-MoTe$_2$ in the thin limit. Giant magnetochiral anisotropy (MCA) with a rectification coefficient $\gamma$ = $3.1 \times 10^6$ T$^{-1}$ A$^{-1}$, is observed at 230 mK, below the superconducting transition temperature ($T_c$). This is one of the largest values reported so far and is likely attributed to the reduced symmetry of the crystal structure. The temperature dependence of $\gamma$ indicates that the ratchet-like motion of magnetic vortices is the origin of the MCA, as supported by our theoretical model. For bilayer $T_{\rm d}$-MoTe$_2$, we successfully perform gate control of the MCA and realize threefold modulation of $\gamma$. Our experimental results provide a new route to realizing electrically controllable superconducting rectification devices in a single material., Comment: 7 pages, 3 figures

We examine the impact of random potential due to remote impurites (RIs) and its in-situ controlled screening on fractional quantum Hall effects (FQHEs) around Landau-level filling factor $\nu = 1/2$. The experiment is made possible by using a dual-gate GaAs quantum well (QW) that allows for the independent control of the density $n_{e}$ of the two-dimensional electron system in the QW and that ($n_\text{SL}$) of excess electrons in the modulation-doping superlattice. As the screening is reduced by decreasing $n_\text{SL}$ at a fixed $n_{e}$, we observe a decrease in the apparent energy gap of the FQHEs deduced from thermal activation, which signifies a corresponding increase in the disorder broadening $\Gamma$ of composite fermions (CFs). Interestingly, the increase in $\Gamma$ is accompanied by a noticeable increase in the longitudinal resistivity at $\nu = 1/2$ ($\rho_{1/2}$), with a much stronger correlation with $\Gamma$ than electron mobility $\mu$ has. The in-situ control of RI screening enables us to disentangle the contributions of RIs and background impurities (BIs) to $\rho_{1/2}$, with the latter in good agreement with the CF theory. We construct a scaling plot that helps in estimating the BI contribution to $\rho_{1/2}$ for a given set of $n_{e}$ and $\mu$., Comment: 6 pages, 4 figures

We report the observation of fractional quantum Hall (FQH) effects in a two-dimensional electron gas (2DEG) confined to an InAs/AlGaSb quantum well, using a dual-gated Hall-bar device allowing for the independent control of the vertical electric field and electron density. At a magnetic field of 24 T, we observe FQH states at several filling factors, namely $\nu = 5/3$, $2/3$, and $1/3$, in addition to the $\nu = 4/3$ previously reported for an InAs 2DEG. The $\nu = 4/3$ and $5/3$ states, which are absent at zero back-gate voltage, emerge as the quantum well is made more symmetric by applying a positive back-gate voltage. The dependence of zero-field electron mobility on the quantum-well asymmetry reveals a significant contribution of interface-roughness scattering, with much stronger scattering at the lower InAs/AlGaSb interface. However, the dependence of the visibility of the FQH effects on the quantum-well asymmetry is not entirely consistent with that of mobility, suggesting that a different source of disorder is also at work., Comment: 5 pages, 4 figures

We report transport measurements of strained InAs/In$_{x}$Ga$_{1-x}$Sb composite quantum wells (CQWs) in the quantum spin Hall phase, focusing on the control of the energy gap through structural parameters and an external electric field. For highly strained CQWs with $x = 0.4$, we obtain a gap of 35 meV, an order of magnitude larger than that reported for binary InAs/GaSb CQWs. Using a dual-gate configuration, we demonstrate an electrical-field-driven topological phase transition, which manifests itself as a re-entrant behavior of the energy gap. The sizeable energy gap and high bulk resistivity obtained in both the topological and normal phases of a single device open the possibility of electrical switching of the edge transport., Comment: 5 pages, 4 figures

We investigate a way to suppress high-frequency coupling between a gate and low-dimensional electron systems in the gigahertz range by measuring the velocity of edge magnetoplasmons (EMPs) in InAs quantum Hall systems.We compare the EMPvelocity in three samples with different electromagnetic environments-one has a highly resistive zinc oxide (ZnO) top gate, another has a normal metal (Ti/Au) top gate, and the other does not have a gate. The measured EMP velocity in the ZnO gate sample is one order of magnitude larger than that in the Ti/Au gate sample and almost the same as that in the ungated sample. As is well known, the smaller velocity in the Ti/Au gate sample is due to the screening of the electric field in EMPs. The suppression of the gate screening effect in the ZnO gate sample allows us to measure the velocity of unscreened EMPs while changing the electron density. It also offers a way to avoid unwanted high-frequency coupling between quantum Hall edge channels and gate electrodes.

We study the influence of epitaxial strain on the electronic properties of InAs/GaSb composite quantum wells (CQWs), host structures for quantum spin Hall insulators, by transport measurements and eight-band $\mathbf{k\cdot p}$ calculations. Using different substrates and buffer layer structures for crystal growth, we prepare two types of samples with vastly different strain conditions. CQWs with a nearly strain-free GaSb layer exhibit a resistance peak at the charge neutrality point that reflects the opening of a topological gap in the band-inverted regime. In contrast, for CQWs with 0.50\% biaxial tensile strain in the GaSb layer, semimetallic behavior indicating a gap closure is found for the same degree of band inversion. Additionally, with the tensile strain, the boundary between the topological and nontopological regimes is located at a larger InAs thickness. Eight-band $\mathbf{k\cdot p}$ calculations reveal that tensile strain in GaSb not only shifts the phase boundary but also significantly modifies the band structure, which can result in the closure of an indirect gap and make the system semimetallic even in the topological regime. Our results thus provide a global picture of the topological-nontopological phase diagram as a function of layer thicknesses and strain., Comment: 13 pages, 9 figures

Electron motion in crystals is governed by the coupling between crystal momentum and internal degrees of freedom such as spin implicit in the band structure. The description of this coupling in terms of a momentum-dependent effective field and the resultant Berry phase has greatly advanced our understanding of diverse phenomena including various Hall effects and has lead to the discovery of new states of matter exemplified by topological insulators. While experimental studies on topological systems have focused on the gapless states that emerge at the surfaces or edges, the underlying nontrivial topology in the bulk has not been manifested. Here we report the observation of Berry's phase in magneto-oscillations and quantum Hall effects of a coupled electron-hole system hosted in quantum wells with inverted bands. In contrast to massless Dirac fermions in graphene, for which the Berry phase $\Gamma$ is quantized at $\pi$, we observe that $\Gamma$ varies with the Fermi level $E_\mathrm{F}$, passing through $\pi$ as $E_\mathrm{F}$ traverses the energy gap that opens due to electron-hole hybridization. We show that the evolution of $\Gamma$ is a manifestation of the pseudospin texture that encodes the momentum-dependent electron-hole coupling and is therefore a bulk signature of the nontrivial band topology., Comment: 6 pages, 4 figures

We report the observation of counterflowing edge current in InAs quantum wells which leads to the breakdown of quantum Hall (QH) effects at high magnetic fields. Counterflowing edge channels arise from the Fermi-level pinning of InAs and the resultant sharp edge potential with downward bending. By measuring the counterflow conductance for varying edge lengths, we determine the effective number $\langle N_\text{C} \rangle$ of counterflowing modes and their equilibration length $\lambda_\text{eq}$ at bulk integer filling factor $\nu = 1$--$4$. $\lambda_\text{eq}$ increased exponentially with magnetic field $B$, reaching $200~\mu$m for $\nu = 4$ at $B \geq 7.6$~T. Our data reveal important roles of the innermost incompressible strip with even filling in determining $\langle N_\text{C} \rangle$ and $\lambda_\text{eq}$ and the impact of the contact configuration on the QH effect breakdown. Our results show that counterflowing edge channels manifest as transport anomalies only at high fields and in short edges. This in turn suggests that, even in the integer QH regime, the actual microscopic structure of edge states can differ from that anticipated from macroscopic transport measurements, which is relevant to various systems including atomic-layer materials., Comment: 6 pages, 5 figures

We investigate the relationship between the Zeeman interaction and the inversion asymmetry induced spin orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in crossing and anti-crossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anti-crossing energy gap depends on the interplay between the SOI terms and the highly anisotropic hole g tensor, and that this interplay can be tuned by selecting the crystal axis along which the current and magnetic field are aligned. Our results constitute independent detection and control of the Dresselhaus and Rashba SOIs in hole systems, which could be of importance for spintronics and quantum information applications., Comment: 5 pages, 3 figures

Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually determine the sign. Here we use a combination of tilted fields and a unique off-diagonal element in the hole g-tensor to directly detect the sign of g*. We are able to tune not only the magnitude, but also the sign of the g-factor by electrical means, which is of interest for spintronics applications. Furthermore, we show theoretically that the resulting behavior of g* can be explained by the momentum dependence of the spin-orbit interaction., Comment: 5 pages, 4 figures

The existence of long-lived non-equilibrium states without showing thermalization, which has previously been demonstrated in time evolution of ultracold atoms, suggests the possibility of their spatial analogue in transport behavior of interacting electrons in solid-state systems. Here we report long-lived non-equilibrium states in one-dimensional edge channels in the integer quantum Hall regime. An indirect heating scheme in a counterpropagating configuration is employed to generate a non-trivial binary spectrum consisting of high- and low-temperature components. This unusual spectrum is sustained even after travelling 5 - 10 {\mu}m, much longer than the length for electronic relaxation (about 0.1 {\mu}m), without showing significant thermalization. This observation is consistent with the integrable model of Tomonaga-Luttinger liquid. The long-lived spectrum implies that the system is well described by non-interacting plasmons, which are attractive for carrying information for a long distance., Comment: 13 pages, 10 figures

When the motion of electrons is restricted to a plane under a perpendicular magnetic field B, a variety of quantum phases emerge at low temperatures whose properties are dictated by the Coulomb interaction and its interplay with disorder. At very strong B, the sequence of fractional quantum Hall (FQH) liquid phases terminates in an insulating phase, which is widely believed to be due to the solidification of electrons into domains possessing Wigner crystal (WC) order. The existence of such WC domains is signaled by the emergence of microwave pinning-mode resonances, which reflect the mechanical properties characteristic of a solid. However, the most direct manifestation of the broken translational symmetry accompanying the solidification - the spatial modulation of particles' probability amplitude - has not been observed yet. Here, we demonstrate that nuclear magnetic resonance (NMR) provides a direct probe of the density topography of electron solids in the integer and fractional quantum Hall regimes. The data uncover quantum and thermal fluctuation of lattice electrons resolved on the nanometre scale. Our results pave the way to studies of other exotic phases with non-trivial spatial spin/charge order., Comment: A revised version with additional data has been published in Nature Physics 10, 648 (2014)

We demonstrate experimentally that graphene quantum capacitance $C_{\mathrm{q}}$ can have a strong impact on transport spectroscopy through the interplay with nearby charge reservoirs. The effect is elucidated in a field-effect-gated epitaxial graphene device, in which interface states serve as charge reservoirs. The Fermi-level dependence of $C_{\mathrm{q}}$ is manifested as an unusual parabolic gate voltage ($V_{\mathrm{g}}$) dependence of the carrier density, centered on the Dirac point. Consequently, in high magnetic fields $B$, the spectroscopy of longitudinal resistance ($R_{xx}$) vs. $V_{\mathrm{g}}$ represents the structure of the unequally spaced relativistic graphene Landau levels (LLs). $R_{xx}$ mapping vs. $V_{\mathrm{g}}$ and $B$ thus reveals the vital role of the zero-energy LL on the development of the anomalously wide $\nu=2$ quantum Hall state., Comment: 9 pages, 6 figures

By means of sequential and cotunneling spectroscopy, we study the tunnel couplings between metallic leads and individual levels in a carbon nanotube quantum dot. The levels are ordered in shells consisting of two doublets with strong- and weak-tunnel couplings, leading to gate-dependent level renormalization. By comparison to a one- and two-shell model, this is shown to be a consequence of disorder-induced valley mixing in the nanotube. Moreover, a parallel magnetic field is shown to reduce this mixing and thus suppress the effects of tunnel renormalization., Comment: 5 pages, 3 figures; revised version as published

Plasmons, which are collective charge oscillations, offer the potential to use optical signals in nano-scale electric circuits. Recently, plasmonics using graphene have attracted interest, particularly because of the tunable plasmon frequency through the carrier density $n$. However, the $n$ dependence of the plasmon velocity is weak ($\propto n^{1/4}$) and it is difficult to tune the frequency over orders of magnitude. Here, we demonstrate that the velocity of plasmons in graphene can be changed over two orders of magnitude by applying a magnetic field $B$ and by the presence/absence of a gate; at high $B$, edge magnetoplasmons (EMPs), which are plasmons localized at the sample edge, are formed and their velocity depends on $B$ and the gate screening effect. The wide range tunability of the velocity and the observed low-loss plasmon transport encourage designing graphene nanostructures for plasmonics applications., Comment: submitted

We investigate the quasiparticle excitation of the bilayer quantum Hall (QH) system at total filling factor $\nu_{\mathrm{T}} = 1$ in the limit of negligible interlayer tunneling under tilted magnetic field. We show that the intrinsic quasiparticle excitation is of purely pseudospin origin and solely governed by the inter- and intra-layer electron interactions. A model based on exciton formation successfully explains the quantitative behavior of the quasiparticle excitation gap, demonstrating the existence of a link between the excitonic QH state and the composite fermion liquid. Our results provide a new insight into the nature of the phase transition between the two states., Comment: 4 pages, 3 figures

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulation-doped GaAs single electron transistors (SETs), and almost an order of magnitude better than in silicon SETs., Comment: accepted for publication in Applied Physics Letters

We study the Zeeman splitting in induced ballistic 1D quantum wires aligned along the [233] and [011] axes of a high mobility (311)A undoped heterostructure. Our data shows that the g-factor anisotropy for magnetic fields applied along the high symmetry [011] direction can be explained by the 1D confinement only. However when the magnetic field is along [233] there is an interplay between the 1D confinement and 2D crystal anisotropy. This is highlighted for the [233] wire by an unusual non-monotonic behavior of the g-factor as the wire is made narrower.

We study effects of tilted magnetic fields on energy levels in a double-quantum-well (DQW) system, focusing on the coupling of subbands and Landau levels (LLs). The subband-LL coupling induces anticrossings between LLs, manifested directly in the magnetoresistance. The anticrossing gap becomes larger than the spin splitting at the tilting angle $\theta \sim 20^\circ $ and larger than the cyclotron energy at $\theta \sim 50^\circ $, demonstrating that the subband-LL coupling exerts a strong influence on quantum Hall states even in at a relatively small $\theta $ and plays a dominant role for larger $\theta $. We also find that when the DQW potential is asymmetric, LL coupling occurs even within a subband. Calculations including higher-order coupling reproduce the experimental results quantitatively well.

Magneto-transport and drag measurements on a quasi-Corbino 2D electron bilayer at the systems total filling factor 1 (v_tot=1) reveal a drag voltage that is equal in magnitude to the drive voltage as soon as the two layers begin to form the expected v_tot=1 exciton condensate. The identity of both voltages remains present even at elevated temperatures of 0.25 K. The conductance in the current carrying layer vanishes only in the limit of strong coupling between the two layers and at T->0 K which suggests the presence of an excitonic circular current.

We investigate the electron spin states in the bilayer quantum Hall system at total Landau level filling factor nu =2 exploiting current-pumped and resistively detected NMR. The measured Knight shift, KS, of 75As nuclei reveals continuous variation of the out-of-plane electronic spin polarization between nearly full and zero as a function of density imbalance. Nuclear spin relaxation measurements indicate a concurrent development of an in-plane spin component. These results provide direct information on the spin configuration in this system and comprise strong evidence for the spin canting suggested by previous experiments., Comment: Accepted for Phys. Rev. Lett

We have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs/GaAs heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities, and in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where rs > 10., Comment: 6 pages, 4 figures (accepted to Applied Physics Letters)

We have developed semiconductor point contact devices in which nuclear spins in a nanoscale region are coherently controlled by all-electrical methods. Different from the standard nuclear-magnetic resonance technique, the longitudinal magnetization of nuclear spins is directly detected by measuring resistance, resulting in ultra-sensitive detection of the microscopic quantity of nuclear spins. All possible coherent oscillations have been successfully demonstrated between two levels from four nuclear spin states of I = 3/2 nuclei. Quantum information processing is discussed based on two fictitious qubits of an I = 3/2 system and methods are described for performing arbitrary logical gates both on one and two qubits. A scheme for quantum state tomography based on Mz-detection is also proposed. As the starting point of quantum manipulations, we have experimentally prepared the effective pure states for the I = 3/2 nuclear spin system., Comment: 16 pages, 5 figures

The nuclear-spin-relaxation rate 1/T_1 has been measured in a bilayer electron system at and around total Landau level filling factor nu =1. The measured 1/T_1, which probes electron spin fluctuations, is found to increase gradually from the quantum Hall (QH) state at low fields through a phase transition to the compressible state at high fields. Furthermore, 1/T_1 in the QH state shows a small but noticeable increase away from nu =1. These results demonstrate that, as opposed to common assumption, the electron spin degree of freedom is completely frozen neither in the QH nor compressible states., Comment: 5pages, 4 figures

The tilting angular dependence of the energy gap was measured in the bilayer quantum Hall state at the Landau level filling $\nu=1$ by changing the density imbalance between the two layers. The observed gap behavior shows a continuous transformation from the bilayer balanced density state to the monolayer state. Even a sample with 33 K tunneling gap shows the same activation energy anomaly reported by Murphy {\it et al.}. We discuss a possible relation between our experimental results and the quantum Hall ferromagnet of spins and pseudospins., Comment: 4 pages, 4 figures

We present excitation energy spectra of few-electron vertically coupled quantum dots for strong and intermediate inter-dot coupling. By applying a magnetic field, we induce ground state transitions and identify the corresponding quantum numbers by comparison with few-body calculations. In addition to atomic-like states, we find novel "molecular-like" phases. The isospin index characterizes the nature of the bond of the artificial molecule and this we control. Like spin in a single quantum dot, transitions in isospin leading to full polarization are observed with increasing magnetic field., Comment: PDF file only, 28 pages, 3 tables, 4 color figures, 2 appendices. To appear in Physical Review B, Scheduled 15 Feb 2004, Vol. 69, Issue 8

Magneto-drag reveals the nature of compressible states and the underlying interplay of disorder and interactions. At \nu=3/2 a clear T^{4/3} dependence is observed, which signifies the metallic nature of the N=0 Landau level. In contrast, drag in higher Landau levels reveals an additional contribution, which anomalously grows with decreasing T before turning to zero following a thermal activation law. The anomalous drag is discussed in terms of electron-hole asymmetry arising from disorder and localization, and the crossover to normal drag at high fields as due to screening of disorder., Comment: 5 pages, 4 figures

We measured the magnetoresistance of bilayer quantum Hall (QH) effects at the fractional filling factor $\nu =2/3$ by changing the total electron density and the density difference between two layers. Three different QH states were separated by two types of phase transition: One is the spin transition and the other is the pseudospin transition. In addition, two different hystereses were detected, one of which is specific to bilayer systems. The phase transitions and the hystereses are described well by a composite fermion model extended to a bilayer system., Comment: 4 pages, 5 figures

We investigate interactions between electrons and nuclear spins by using the resistance (Rxx) peak which develops near filling factor n = 2/3 as a probe. By temporarily tuning n to a different value, ntemp, with a gate, the Rxx peak is shown to relax quickly on both sides of ntemp = 1. This is due to enhanced nuclear spin relaxation by Skyrmions, and demonstrates the dominant role of nuclear spin in the transport anomaly near n = 2/3. We also observe an additional enhancement in the nuclear spin relaxation around n = 1/2 and 3/2, which suggests a Fermi sea of partially-polarized composite fermions., Comment: 6 pages, 3 figures

We investigate the dissociation of few-electron circular vertical semiconductor double quantum dot artificial molecules at 0 T as a function of interdot distance. Slight mismatch introduced in the fabrication of the artificial molecules from nominally identical constituent quantum wells induces localization by offsetting the energy levels in the quantum dots by up to 2 meV, and this plays a crucial role in the appearance of the addition energy spectra as a function of coupling strength particularly in the weak coupling limit., Comment: Accepted for publication in Phys. Rev. Lett

By tilting the samples in the magnetic field, we measured and compared the Skyrmion excitations in the bilayer quantum Hall (QH) state at the Landau-level filling factor $\nu =2$ and in the monolayer QH state at $\nu =1$. The observed number of flipped spins is $N_s=14$ in the bilayer system with a large tunneling gap, and $N_s=7$ in the bilayer system with a small tunneling gap, while it is $N_s=7$ in the monolayer system. The difference is interpreted due to the interlayer exchange interaction. Moreover, we have observed seemingly preferred numbers $N_s=14,7,1$ for the flipped spins by tilting bilayer samples., Comment: 4 pages, 4 figures