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3. New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices.

Author

Autran, J. L. and Munteanu, D.

Subjects
*SOFT errors, *PARTICLE tracks (Nuclear physics), *ERROR rates, *SEMICONDUCTOR devices
Abstract

Charge diffusion from an ion track and its collection by a biased contact in a semiconductor domain is modeled and analyzed within the framework of the so-called diffusion–collection approach. We successively examine the case of charge diffusion from a point source and from a linear distribution, introducing and discussing the concept of collection velocity at the point where the collection current is evaluated. Analytical formulations of the collected charge, collection current, and collection velocity are developed. Implications for the calculation of the soft error rate in complementary metal-oxide-semiconductor circuits exposed to ionizing particles are derived. Finally, our model provides new insights into the correct definition of the charge collection velocity in collection–diffusion models. [ABSTRACT FROM AUTHOR]

Published
2023
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6. EUROfusion contributions to ITER nuclear operation

Author

Litaudon, X., Fantz, U., Villari, R., Toigo, V., Aumeunier, M. -H, Autran, J. -L, Batistoni, P., Belonohy, E., Bradnam, S., Cecchetto, M., Colangeli, A., Dacquait, F., Dal Bello, S., Dentan, M., De Pietri, M., Eriksson, Jacob, Fabbri, M., Falchetto, G., Figini, L., Figueiredo, J., Flammini, D., Fonnesu, N., Frassinetti, L., Galdon-Quiroga, J., Garcia-Alia, R., Garcia-Munoz, M., Ghani, Z., Gonzalez-Martin, J., Grelier, E., Di Grazia, L., Grove, B., Grove, C. L., Gusarov, A., Heinemann, B., Hjalmarsson, Anders, Hyvarinen, O., Ioannou-Sougleridis, V., Jones, L., Kim, H. -T, Klosowski, M., Kocan, M., Kos, B., Kos, L., Kotnik, D., Laszynska, E., Leichtle, D., Lengar, I., Leon-Gutierrez, E., Lopez-Revelles, A. J., Loreti, S., Loughlin, M., Marcuzzi, D., Mcclements, K. G., Mariano, G., Mattei, M., Mergia, K., Mietelski, J., Mitteau, R., Moindjie, S., Munteanu, D., Naish, R., Noce, S., Packer, L. W., Pamela, S., Pampin, R., Pau, A., Peacock, A., Peluso, E., Peneliau, Y., Peric, J., Radulovic, V., Ricci, D., Rimini, F., Sanchis-Sanchez, L., Sauvan, P., Savva, M. I., Serianni, G., Shand, C. R., Snicker, A., Snoj, L., Stamatelatos, I. E., Stancar, Z., Terranova, N., Vasilopoulou, T., Vila, R., Waterhouse, J., Wimmer, C., Wuenderlich, D., Zohar, A., Litaudon, X., Fantz, U., Villari, R., Toigo, V., Aumeunier, M. -H, Autran, J. -L, Batistoni, P., Belonohy, E., Bradnam, S., Cecchetto, M., Colangeli, A., Dacquait, F., Dal Bello, S., Dentan, M., De Pietri, M., Eriksson, Jacob, Fabbri, M., Falchetto, G., Figini, L., Figueiredo, J., Flammini, D., Fonnesu, N., Frassinetti, L., Galdon-Quiroga, J., Garcia-Alia, R., Garcia-Munoz, M., Ghani, Z., Gonzalez-Martin, J., Grelier, E., Di Grazia, L., Grove, B., Grove, C. L., Gusarov, A., Heinemann, B., Hjalmarsson, Anders, Hyvarinen, O., Ioannou-Sougleridis, V., Jones, L., Kim, H. -T, Klosowski, M., Kocan, M., Kos, B., Kos, L., Kotnik, D., Laszynska, E., Leichtle, D., Lengar, I., Leon-Gutierrez, E., Lopez-Revelles, A. J., Loreti, S., Loughlin, M., Marcuzzi, D., Mcclements, K. G., Mariano, G., Mattei, M., Mergia, K., Mietelski, J., Mitteau, R., Moindjie, S., Munteanu, D., Naish, R., Noce, S., Packer, L. W., Pamela, S., Pampin, R., Pau, A., Peacock, A., Peluso, E., Peneliau, Y., Peric, J., Radulovic, V., Ricci, D., Rimini, F., Sanchis-Sanchez, L., Sauvan, P., Savva, M. I., Serianni, G., Shand, C. R., Snicker, A., Snoj, L., Stamatelatos, I. E., Stancar, Z., Terranova, N., Vasilopoulou, T., Vila, R., Waterhouse, J., Wimmer, C., Wuenderlich, D., and Zohar, A.

Abstract

ITER is of key importance in the European fusion roadmap as it aims to prove the scientific and technological feasibility of fusion as a future energy source. The EUROfusion consortium of labs within Europe is contributing to the preparation of ITER scientific exploitation and operation and aspires to exploit ITER outcomes in view of DEMO. The paper provides an overview of the major progress obtained recently, carried out in the frame of the new (initiated in 2021) EUROfusion work-package called 'Preparation of ITER Operation' (PrIO). The overview paper is directly supported by the eleven EUROfusion PrIO contributions given at the 29th Fusion Energy Conference (16-21 October 2023) London, UK [www.iaea.org/events/fec2023]. The paper covers the following topics: (i) development and validation of tools in support to ITER operation (plasma breakdown/burn-through with evolving plasma volume, new infra-red synthetic diagnostic for off-line analysis and wall monitoring using Artificial Intelligence techniques, synthetic diagnostics development, development and exploitation of multi-machine databases); (ii) R&D for the radio-frequency ITER neutral beam sources leading to long duration of negative deuterium/hydrogen ions current extraction at ELISE and participation in the neutral beam test facility with progress on the ITER source SPIDER, and, the commissioning of the 1 MV high voltage accelerator (MITICA) with lessons learned for ITER; (iii) validation of neutronic tools for ITER nuclear operation following the second JET deuterium-tritium experimental campaigns carried out in 2021 and in 2023 (neutron streaming and shutdown dose rate calculation, water activation and activated corrosion products with advanced fluid dynamic simulation; irradiation of several materials under 14.1 MeV neutron flux etc).

Published
2024
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8. Fusion Neutron-Induced Soft Errors During Long Pulse D-D Plasma Discharges in the WEST Tokamak

Author

Moindjie, S., primary, Munteanu, D., additional, Autran, J. L., additional, Dentan, M., additional, Moreau, P., additional, Pellissier, F. P., additional, Santraine, B., additional, Bucalossi, J., additional, Malherbe, V., additional, Thery, T., additional, Gasiot, G., additional, Roche, P., additional, Cecchetto, M., additional, and Alia, R. Garcia, additional

Published
2024
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13. The young nostalgics : contemporary constructions of "pastness" on Tumblr microblogs

Author

Munteanu, D. G.

Subjects
006.7
Abstract

This thesis analyses contemporary constructions of "pastness", as nostalgically expressed by an online community on the popular microblogging platform Tumblr. Drawing on original ethnographic and semiotic work, as well as on a wide range of sources centred on its medical past and subsequent literary, psychological and social acculturation throughout the 19th and 20th centuries, I plead for an understanding of nostalgia not as the reactionary, inauthentic, naive or irretrievably commercial social disease that (similarly nostalgic) mainstream academic discourses have framed it as, but rather as a pervasive, protean and often misunderstood complication, or consequence of modernity — one that, I continue to argue, can facilitate culturally complex, if ambivalent, forms of personal expression. In the specific case of my participants, young people articulating their vision of themselves and of the world through publically available (yet also privately informed and interpersonally mediated), digitally synesthetic narratives, I show how the emotion becomes further entangled in biographical, transbiographical, historical and transhistorical, as well as aesthetic, emotional and artistic contingencies. This amounts to a highly idiosyncratic, symbolically coherent reflexive ideology, the cultural significance of which my thesis will contextualize, interpret and draw important conclusions from.

Published
2014

14. The Plateau de Bure Neutron Monitor: design, operation and Monte-Carlo simulation

Author

Semikh, S., Serre, S., Autran, J. L., Munteanu, D., Sauze, S., Yakushev, E., and Rozov, S.

Subjects
Physics - Instrumentation and Detectors, Astrophysics - Instrumentation and Methods for Astrophysics
Abstract

This paper describes the Plateau de Bure Neutron Monitor (PdBNM), an instrument providing continuous ground-level measurements of atmospheric secondary neutron flux resulting from the interaction of primary cosmic rays with the Earth's atmosphere. The detector is installed on the Plateau de Bure (Devoluy mountains, south of France, latitude North 44{\deg} 38' 02", longitude East 5{\deg} 54' 26", altitude 2555 m) as a part of the ASTEP Platform (Altitude Single-event effects Test European Platform), a permanent installation dedicated to the study of the impact of terrestrial natural radiation on microelectronics circuit reliability. The present paper reports the neutron monitor design, its operation since August 2008 and its complete numerical simulation using the Monte Carlo codes GEANT4 and MCNPX. We particularly detail the computation of the neutron monitor detection response function for neutrons, muons, protons and pions, the comparison between GEANT4 and MCNPX numerical results and the evaluation of the PdBNM counting rate a function of both the nature and flux of the incident atmospheric particles., Comment: 37 pages, 14 figures, 5 tables; numerical error in GEANT4 particle sourse corrected, section 4.4 was significantly revised. Submitted to IEEE Transactions on Nuclear Science

Published
2011
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21. Multiscale, Multiphysics Modeling and Simulation of Single-Event Effects in Digital Electronics: From Particles to Systems

Author

Autran, J. L. and Munteanu, D.

Abstract

This article aims to provide a survey of modeling and simulation of single-event effects (SEEs) in digital electronics at device, circuit, and system levels. It primarily focuses on the specific multiscale, multiphysics, multidomain nature of SEEs and on the main underlying physical mechanisms that lead to the occurrence of single events in digital devices and circuits. This article addresses different ways to model and simulate both in space and time this complex sequence of mechanisms from the particle–material interaction up to the electrical response of a given electronics device, circuit, or system. It highlights the specific features of each methodology and discusses simulation requirements, code, or model inputs and expected outputs.

Published
2024
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48. Physics-based analytical modeling of quasi-ballistic transport in double-gate MOSFETs: from device to circuit operation

Author

Martinie, S., Munteanu, D., Le Carval, G., and Autran, J.-L.

Subjects
Backscattering -- Analysis, Electron transport -- Analysis, Metal oxide semiconductor field effect transistors -- Models, Metal oxide semiconductor field effect transistors -- Electric properties, Quantum theory -- Analysis, Business, Electronics, Electronics and electrical industries
Published
2009

49. Altitude and underground real-time SER characterization of CMOS 65 nm SRAM

Author

Autran, J.L., Roche, P., Sauze, S., Gasiot, G., Munteanu, D., Loaiza, P., Zampaolo, M., and Borel, J.

Subjects
Altitudes, Memory (Computers), Semiconductor industry, Complementary metal oxide semiconductors, Semiconductor memory, Semiconductor industry, Business, Electronics, Electronics and electrical industries
Published
2009

50. Modeling and simulation of single-event effects in digital devices and ICs

Author

Munteanu, D. and Autran, J.-L.

Subjects
Integrated circuits -- Analysis, Semiconductor chips -- Analysis, Metal oxide semiconductor field effect transistors -- Analysis, Standard IC, Business, Electronics, Electronics and electrical industries
Abstract

This paper reviews the status of research in modeling and simulation of single-event effects (SEE) in digital devices and integrated circuits, with a special emphasis on the current challenges concerning the physical modeling of ultra-scaled devices (in the deca-nanometer range) and new device architectures (Silicon-on-insulator, multiple-gate, nanowire MOSFETs). After introducing the classification and the terminology used in this paper, we firstly present the basis of the different transport models used in device-level simulation (drift-diffusion, hydrodynamic, Monte-Carlo and some approximated and exact quantum-mechanical based approaches). We also focus on the main emerging physical phenomena affecting ultra-short MOSFETs (quantum effects, tunneling current, ballistic operation) and the methods envisaged for taking them into account at device simulation level. Several examples of device simulation are given at the end of this first part, including recent results on fully-depleted SOI and multiple-gate devices. In the second part, we briefly survey the different circuit-level modeling approaches (circuit-level simulation, Mixed-Mode, 3-D simulation of portions of circuits) of single-event effects in integrated circuits. The SEU in advanced SRAM and SEE mechanisms in logic circuits are reminded. The production and propagation of digital single-event transients (DSETs) in sequential and combinational logic, as well as the soft error rate trends with scaling are particularly addressed. Recent bibliographical examples of simulation in SRAMs and logic circuits are presented and discussed to illustrate these topics at circuit-level. Index Terms--Circuit simulation, compact models, device modeling and simulation, digital circuits, digital single-event transient, double-gate, FinFET, gate-all-around, multiple-gate MOSFET, nanowire MOSFET, omega-gate, quantum-mechanical effects, radiation effects, single-event effects, soft error rate, transport models, triple-gate.

Published
2008

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