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Objective: The primary aim of this investigation was to appraise the effectiveness of supplementary tamsulosin in augmenting the stone-free rate subsequent to extracorporeal shock wave lithotripsy (ESWL) in managing renal calculi. Study Design: Employing a randomized controlled trial methodology, participants diagnosed with renal calculi were allocated to either a control group or an experimental group receiving tamsulosin. The experimental group was administered oral tamsulosin concomitantly with ESWL, whereas the control group underwent ESWL exclusively. Method: This study was conducted at Liaquat National Hospital Karachi in the duration from June, 2022 to November, 2022 over 100 patients presenting with renal calculi was enrolled and indiscriminately segregated into two equivalent groups, each containing 50 participants. Those in the tamsulosin group were prescribed oral tamsulosin for a four-week period before and after ESWL, while the control group received ESWL alone. The primary outcome metric was the stone-free rate following a three-month treatment regimen. Results: The tamsulosin group demonstrated a significantly elevated stone-free rate in comparison to the control group (80% vs 60%, p

Objective: In order to ascertain the impact of silent inflammatory prostatitis on the clinical results of individuals receiving trans urethral prostate resection owing to benign prostatic hyperplasia. Study Design: Retrospective study Place and Duration: This retrospective study was conducted at Liaquat National Hospital Karachi in the period from April, 2022 to September, 2022. Methods: Total 330 patients were presented in this study. In this study, individuals over 45 years without a history of urologic surgery who presented to a urology clinic with lower urinary tract symptoms related to benign prostatic hyperplasia were included. Pathological outcomes and clinical indicators were evaluated before and one year after surgery. Mean Standard deviation was used to present data and categorical variables were assessed by frequencies and percentages. Results: Mean age of the patients was 61.3±10.42 years. Among 330 cases, 200 (60.6%) patients were had benign prostatic hyperplasia and 130 (39.4%) cases had both prostatic inflammation (category-IV) and benign prostatic hyperplasia. Before TURP, mean prostate volume in BP patients was 55.7±8.11 m3 and in BPH/PI patients was 55.3±10.6 m3 and after TURP mean prostate volume in BP patients was 23.2±1.20 m3 and in BPH/PI group 23.4±8.17 m3. We found that people with prostate inflammation had lower Qmax values and a higher preoperative prostate score compared to those who had no signs of inflammation before to prostate transurethral resection. Conclusion: In this study, we came to the conclusion that in individuals with benign prostatic hyperplasia, prostate inflammation without symptoms might worsen lower urinary tract symptoms and the rate of urine flow. Keywords: Benign Prostatic Hyperplasia (BPH), Prostate Pathology, Prostatic Inflammation

Density functional theory calculations have been used to investigate the electrical, optical, and elastic characteristics of double perovskites Rb2YAgX6 (X = Br, I) halides for exploring their opto-electronic applications. For optimizing the lattice constants and structure parameters, we have fitted the Murnaghan equation of state to the total energies computed for a wide range of lattice volumes. For the ground state lattice constants, the computed electronic band structure diagrams show indirect wide band gaps of 4.2 eV and 3.2 eV for Rb2YAgBr6 and Rb2YAgI6, respectively. Our results indicate that both of the studied halides absorb electromagnetic radiations beyond the visible region and are therefore appear potential candidates for optoelectronic applications in the ultraviolet rage of spectrum. The mechanical stability and ductility of the two halides are examined in terms of the elastic constants. Our results clearly demonstrate that the device application potential of these double perovskite halides is interesting owing to their high mechanical stability and hardness.

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are layered semiconductor materials that have recently emerged as promising candidates for advanced nano- and photoelectronic applications. Previously, various doping methods, such as surface functionalization, chemical doping, substitutional doping, surface charge transfer, and electrostatic doping, have been introduced, but they are not stable or efficient. In this study, we have developed carrier polarity modulation of molybdenum ditelluride (MoTe2) for the development of phototransistors and switching photodiodes. Initially, we treated p-MoTe2 in a N2 environment under DUV irradiation and found that the p-type MoTe2 changed to n-type MoTe2. However, the treated devices exhibited environmental stability over a long period of 60 days. Kelvin probe force microscopy (KPFM) measurements demonstrated that the values of the work function for p-MoTe2 and n-MoTe2 were ∼4.90 and ∼4.49 eV, respectively, which confirmed the carrier tunability. Also, first-principles studies were performed to confirm the n-type carrier polarity variation. Interestingly, the n-type MoTe2 reversed its polarity to p-type after the irradiation of the devices under DUV in an O2 environment. Additionally, a lateral homojunction-based p-n diode of MoTe2 with a rectification ratio of ∼2.5 × 104 was formed with the value of contact potential difference of ∼400 mV and an estimated fast rise time of 29 ms and decay time of 38 ms. Furthermore, a well self-biased photovoltaic behavior upon illumination of light was achieved and various photovoltaic parameters were examined. Also, VOC switching behavior was established at the p-n diode state by switching on and off the incident light. We believe that this efficient and facile carrier polarity modulation technique may pave the way for the development of phototransistors and switching photodiodes in advanced nanotechnology.

We used first-principles calculations to investigate the laterally stitched monolayered MoSi2N4/XSi2N4 (X=W, Ti) 2D heterostructures. The structural stability of such heterostructures is confirmed by the phonon spectra exhibiting no negative frequencies. From the electronic band structures, the MoSi2N4/WSi2N4-lateral heterostructure (MWLH) shows semiconducting nature with an indirect bandgap of 2.35 eV, while the MoSi2N4/TiSi2N4-lateral heterostructure (MTLH) revealed metallic behavior. Moreover, the effect of biaxial strain on the electronic and optical properties of MWLH is studied, which indicated substantial modifications in their electronic and optical spectra. In particular, an indirect to direct bandgap semiconducting transition can be achieved in MWLH via compressive strain. Besides, the absorbance, transmittance and reflectance spectra can effectively be tuned by means of biaxial strain. Our findings provide insights into the strain engineering of electronic and optical features, which could pave the way for future nano- and optoelectronic applications., Comment: 22 paeges, 4 figures

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are layered semiconductor materials that have recently emerged as promising candidates for advanced nano- and photoelectronic applications. Previously, various doping methods, such as surface functionalization, chemical doping, substitutional doping, surface charge transfer, and electrostatic doping, have been introduced, but they are not stable or efficient. In this study, we have developed carrier polarity modulation of molybdenum ditelluride (MoTe

The ab-initio method has been applied to explore the chalcopyrite compounds HgGa2X4 (X = S, Se) structural, optoelectronics, and thermoelectric characteristics. We attained the optimized parameters of lattice constant by employing Perdew–Burke–Ernzerhof generalized gradient approximation (PBEsol-GGA) and computed the values are approximately equal to experimental values. To calculate accurate bandgap values of both compounds, we used Trans along with Bhala reformed Becke and Johnson (TB-mBJ). Remarkably, both HgGa2X4 (X = S, Se) compounds yield a direct bandgap nature, having calculated values 2.80 eV and 2.30 eV, respectively, which are accurately comparable to experimental values. It also observed that the strong optical absorption is below 3.0 eV, which made both compounds favorable for solar cell device applications. In last, we make a detailed investigation of thermoelectric characteristics in terms of electric and thermal conductivity, power factor, and figure of merit (ZT) with the help of the BoltzTrap code. To check the material’s thermal stability, we accomplished the thermal parameters against temperatures.

Materials of the type A2B2O7 have remarkable ferroelectric, multiferroic and photocatalytic properties. Strontium pyroniobate (Sr2Nb2O7) was the first compound of this family that showed a high curie temperature, ferroelectric behavior at room temperature and extra ordinary piezo-, thermo- and pyro-electric properties. We have reported on first principles study of substitutional effect of europium (Eu+2) on strontium pyroniobate and its potential in low temperature electronics. The electrons were handled using GGA + U whereas calculations were carried out using DFT framework in WIEN2k. The calculated results show that doping induced a direct band gap of 1.193 eV and 1.082 eV for majority spin up states and 3.289 eV and 3.096 eV for minority spin down states in europium doped bulk and two-dimensional compounds, respectively. Furthermore, the optical dispersion of dielectric constant is in close agreement with our calculated electronic structure, and the main peak in energy lossless region for all investigated compounds is observed at 13 eV which can be related to Plasmon resonance peak. In general, computed results for two dimensional (2D) europium doped Sr2Nb2O7 proves its enhanced suitability and strong candidacy for low temperature applications.

We have reported on theoretical insights of LuZnCuAs2 compound from Zintl family using computational code WIEN2k where we optimized unit cell volume at ground state and investigated its structural, electronic, optoelectronic and thermal properties on three different potentials including local density approximation (LDA), generalized gradient approximation (GGA) and generalized gradient approximation plus Tran-Blaha modified Becke-Johnson (GGA + mBJ). The former two suggested a semi-metallic behavior whereas GGA + mBJ showed semiconductor regime with band gap of 0.4 eV. We observed major contribution of 5d-shell of Lutetium (Lu) in density of states (DOS) relative to 3d-shells of Zinc (Zn) and Copper (Cu). We have reported on reflectivity, refractive index, energy loss and absorption of LuZnCuAs2. We also studied thermal behavior of LuZnCuAs2 using BoltzTrap as implemented in WIEN2k code where we calculated its electrical conductivity, Seebeck coefficient, thermal conductivity and the dimensionless figure of merit (ZT).

Two-dimensional (2D) semiconducting TMDCs materials have recently gained much attention and are considered as promising materials with a high surface-to-volume ratio for electronics. The performance of devices greatly affected by environmental factors. For attaining the high performance of the device, environmental issues must be addressed. Here, we have demonstrated an n-type doping effect from DUV + N2 treatment to overcome the environmental influences and to enhance the performance of MoTe2 FET. After the n-type doping effect from DUV + N2 treatment mobility, charge carrier density, and ION/IOFF ratio increased up to 62.4 cm2/Vs, 3 × 1012 cm−2 and 107 respectively. The negative shift of threshold voltage (Vth) and Raman peaks towards the lower wavenumber confirms the n-type doping effect in the MoTe2 FET from DUV + N2 treatment. By using this method, we can change and control the polarity of the MoTe2 FET by changing the doping time. First-principles calculation on the study of structural, electronic and optical properties have been performed using the density functional theory (DFT) where full-potential linearized augmented plane wave (FP-LAPW) was used a basis set with generalized gradient approximation plus Hubbard potential (GGA + U) respectively. Furthermore, investigation of electron charge density is done to analyze the mechanism of structural stability of nitrogen doped MoTe2. DUV + N2 treatment is an effective way to improve the performance of MoTe2 FET.