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Your search keyword '"Muller, J.-C."' showing total 294 results
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294 results on '"Muller, J.-C."'

3. The Human Community as a Primate Society [and Comments]

Author

Rodseth, Lars, Wrangham, Richard W., Harrigan, Alisa M., Smuts, Barbara B., Dare, Ron, Fox, Robin, King, Barbara J., Lee, P. C., Foley, R. A., Muller, J. C., Otterbein, Keith F., Strier, Karen B., Turke, Paul W., and Wolpoff, Milford H.

Published
1991

21. Ex situ prepared Si nanocrystals embedded in silica glass: Formation and characterization.

Author

Švrček, V., Slaoui, A., and Muller, J.-C.

Subjects
NANOCRYSTALS, SILICA, PHOTOLUMINESCENCE, POROUS silicon, ELECTRON microscopy, CHEMICAL vapor deposition
Abstract

In this article we present an alternative approach for the fabrication of silicon nanocrystals (Si–nc) prepared ex situ of the silicon dioxide (SiO[sub 2]) host matrix. The Si–nc are scratched from porous silicon layers and incorporated into a host spin-on-glass SiO[sub 2] based matrix. High-resolution transmission electron microscopy and Raman spectroscopy revealed Si–nc of 2–5 nm size. These nanocrystallites exhibit visible room temperature photoluminescence (PL) with a maximum at about 700 nm. The presence of the dopant in the host matrix is shown to induce a blueshift of the PL maxima due to modified surface states of the Si–nc. This approach allows the fabrication of self-supporting samples with very high Si–nc concentrations. A bright photoluminescence at room temperature is obtained on such materials. Finally, strong indication of optical gain at room temperature is shown for samples with high Si–nc concentrations in a phosphorus doped sol gel host matrix. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2004
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36. Phosphorus diffusion into silicon from a spin-on source using rapid thermal processing.

Author

Hartiti, B., Slaoui, A., Muller, J. C., Stuck, R., and Siffert, P.

Subjects
SEMICONDUCTOR diffusion, PHOSPHORUS, RAPID thermal processing, SILICON, DIFFUSION
Abstract

Presents a study which described the diffusion of phosphorus into silicon semiconductor from a doped spin-on source with the use of rapid thermal rapid processing. Characterization of the resulting diffused samples; Experimental procedures; Results and discussion.

Published
1992
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37. Electrically active defects in silicon after excimer laser processing.

Author

Hartiti, B., Slaoui, A., Muller, J. C., and Siffert, P.

Subjects
SCHOTTKY barrier diodes, SILICON diodes, EXCIMER lasers, DEEP level transient spectroscopy
Abstract

Presents a study that examined the presence of electrically-active defects in a silicon Schottky diode after excimer laser processing, using deep-level transient spectroscopy. Methodology; Comparison of the detected defects with those observed after solid-state laser annealing in silicon; Examination of the mechanism of defect formation.

Published
1989
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38. On the kinetics of solid phase regrowth and dopant activation during rapid thermal annealing of implantation amorphized silicon.

Author

Adekoya, W. O., Hage-Ali, M., Muller, J. C., and Siffert, P.

Subjects
SILICON, EPITAXY, RAPID thermal processing, BACKSCATTERING
Abstract

Presents information on a study which examined the solid phase epitaxial regrowth of implantation amorphized silicon induced by rapid thermal annealing using Rutherford backscattering and channeling measurements. Requirements for the doping technology of semiconducting thin films; Experimental details; Results and discussion; Conclusions.

Published
1988
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