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Two-dimensional (2D) MoS2 belongs to the class of Transition Metal Dichalcogenides (TMDs), while V2O5 is categorized as a Transition Metal Oxide (TMO) both materials have demonstrated exceptional photocatalytic properties. In the present study, the hydrothermal technique was employed to synthesize with formulation strategy MoS2(x)V2O5(1-x)(X = 1–5% w/w) nanocomposites as a prominent photocatalyst under controlled exposure of UV-photons of light for deterioration of industrial wastage in water. The V2O5 nanoparticles were effectively embellished on the surface of two-dimensional molybdenum nano-layered matrix. The crystal phase and morphology such as nanospheres and layered structures of pure V2O5 and MoS2-doped-V2O5 nanocomposites were verified by the X-ray diffraction (XRD) and scanning electron microscopy (SEM) respectively. In UV–Vis spectroscopy findings, the energy bandgap (Eg) is decreasing pattern from 2.76 to 0.85eV with increment of substitution percentages. The decremented energy bandgap of V2O5/MoS2 is revealed to be the cause of the observed additional gamma active states and contributed to the development of conduction and valence bands. The optical conductivity increased from 3.6 to 14.5 Ω−1cm−1 in the UV visible spectrum, while the energy bandgap decreased from 2.76 to 1.25 eV. In the UV–Vis spectrum absorption peak of prepared nanocomposites exhibits an increase in absorbance from 6.5(a.u.) to 14.5 (a.u.) at wavelength 310 nm. Photoluminescence (PL) investigations reveal that when the doping percentage increases, the intensity of the peaks decreases as signifies a lower rate of electron-hole pair recombination, hence increasing the separation capacity. This separation capacity demonstrates well-organized charge transfer on the enhanced photocatalyst surface area and provides better dye degradation activity. A BET detail analysis included Saito-Foley pore size distribution (SF-PSD), BJH (adsorption) pore area, volume & pore size, and textural properties of MoS2(x)V2O5(1-x)(X = 1–5% w/w) photocatalyst can be applied as a cost-effective, environmentally friendly, long-lasting, and effective photocatalyst for the photocatalytic degradation of organic pollutants. The degradation of methylene blue (M.B) within 150 min established that the synthesized MoS2(x)V2O5(1-x)(X = 1–5% w/w) material was shown to be an economically inexpensive and stable nanocomposites for photocatalytic activity.

This comparison study is based on Density Functional Theory (DFT) to investigate the structural, electrical, and optical properties of two-dimensional XSn4O7(X=Ba, Ca) and XSi4O9(X = Ba, Ca) materials. First-principles analysis using the PBE-GGA (Perdew Burke-Ernzerhof Generalized Gradient Approximation) shows that Ca and Ba have a major impact on the electrical characteristics, energy band gap (Eg), and structural stability. The volume of crystal cells of XSn4O7 (X=Ba, Ca) and XSi4O9(X= Ba, Ca) decreased from 581.794 to 354.022A3 due to the ionic radii difference of Ba and Ca from 268 to 231 pm respectively. The calculated energy bandgaps (Eg) are 4.28, 2.14, 0.88, and 0.34 eV for BaSi4O9, CaSi4O9, BaSn4O7, and CaSn4O7 respectively. These energy bandgap values indicate that BaSi4O9 and CaSi4O9 have wide band gaps while BaSn4O7 and CaSn4O7 exhibit small energy band gaps, making them suitable and more responsive to UV visible light. The detailed results of optical conductivity show that the peaks of optical conductance for 2D XSn4O7(X=Ba, Ca) and XSi4O9(X=Ba, Ca) reach maximum values of 1.7, 2.2, 2.9, and 6 cm−1 in the ultraviolet spectrum at energies ranging from 0 to 40eV, respectively. Two dimensional XSn4O7 (X=Ba, Ca) and XSi4O9 (X=Ba, Ca) materials showed maximal optical absorption with absorption coefficient α(w) values of 4.1 × 105, 2.2 × 105, 1.5 × 105, and 1 × 105 cm-1, respectively. In comparison to other materials, the highest absorption is found in BaSn4O7 and CaSn4O7, with absorption coefficients of 4.1 × 105 cm-1 and 2.2 × 105 cm-1, respectively. Our findings indicate that 2D XSn4O7(X=Ba, Ca) and XSi4O9(X=Ba, Ca) oxides, are appropriate for photocatalytic and solar cell applications.

Abstract An asymmetric a-side alkyl chain anthracene derivative 6-(4 (-2 Ethyl Octyl) Phenyl) 2Phenyl Anthracene (EOPPA) was designed based on a π-electron skeleton with a side alkyl chain of anthracene core molecule. EOPPA was found to be a sturdy and high-performance p-type semiconductor for optoelectronic applications. The creation has successfully made this new material EOPPA with the best solubility, which exhibits both sufficient solvent solubility and thermal stability. The asymmetrical structural features of EOPPA allowed for the preparation of two-dimensional crystalline thin films in micrometer sizes with 100 nm thicknesses on a Si/SiO2 substrate through a solution processing method. The efficient solution processing synthesis of EOPPA and its high performance suggest that it has great potential in the field of organic electronics. The EOPPA demonstrated optoelectronic properties, crystalline structure, and good thin-film transistors having mobilities higher than 0.18 cm2 V−1 S−1, and a high current on/off ratio that can withstand temperatures of almost 225 °C. Furthermore, EOPPA presents good potential to be amongst the next generation of p-type anthracene core organic semiconductors, especially for practical printed electronics applications.

In the present research, the structural, electronic and optical properties of transition metal dichalcogenide-doped transition metal oxides MoS2-doped-V2O5 with various doping concentrations (x = 1–3%) of MoS2 atoms are studied by using first principles calculation. The generalized gradient approximation Perdew–Burke–Ernzerhof simulation approach is used to investigate the energy bandgap (Eg) of orthorhombic structures. We examined the energy bandgap (Eg) decrement from 2.76 to 1.30 eV with various doping (x = 1–3%) of molybdenum disulfide (MoS2) atoms. The bandgap nature shows that the material is a well-known direct bandgap semiconductor. MoS2 doping (x = 1–3%) atoms in pentoxide (V2O5) creates the extra gamma active states which contribute to the formation of conduction and valance bands. MoS2-doped-V2O5 composite is a proficient photocatalyst, has a large surface area for absorption of light, decreases the electron-hole pairs recombination rate and increases the charge transport. A comprehensive study of optical conductivity reveals that strong peaks of MoS2-doped-V2O5 increase in ultraviolet spectrum region with small shifts at larger energy bands through increment doping x = 1–3% atoms of MoS2. A significant decrement was found in the reflectivity due to the decrement in the bandgap with doping. The optical properties significantly increased by the decrement of bandgap (Eg). Two-dimensional MoS2-doped-V2O5 composite has high energy absorption, optical conductivity and refractive index, and is an appropriate material for photocatalytic applications.

ZnO is an important II-IV n-type direct bandgap semiconductor material that has exhibited wide consideration due to its applications in optoelectronic devices. In the present investigation, untreated and plasma-treated ZnO NPs were fabricated by a sol-gel route and analyzed with XRD, Raman, UV-Vis spectra, and I–V characteristic techniques. To be used in electronic applications, the ZnO nanoparticles were subjected to a plasma treatment process to tune their optical, vibrational mode, structural and electrical properties. XRD confirmed the pure Wurtzite tetragonal phase crystalline nature of produced samples. The average crystalline size, lattice constant, unit cell volume, and porosity were found in the range of 3.81–4.68 nm, a = 3.217–3.323 Å and c = 2.032–2.178 Å, 5.662–11.274 Å3 and 7.09–5.03%, respectively. The Raman spectra revealed that the intensity of Raman bands was increased due to the increase in the vibrational amplitude and increase in force constants with the enhancement in grain size, these spectra results are in good agreement with XRD and reveal the purity of samples. The bandgap found reduced from 3.56 eV to 3.39 eV by plasma treatment. The electrical studies revealed that plasma treatment improves the electrical properties of ZnO NPs without producing any structural distortions. I–V characteristic curves confirmed that the conductivity was increased from 8.3 X 10−6 to 5.5 X 10−4 ℧ cm−1 on plasma treatment which caused an increase in leakage current. The improved structural, vibrational mode, optical and electrical properties of prepared ZnO NPs make them a suitable candidate for application in electronic devices.

Manufacturing of energy storage devices with good efficiency and fewer losses has been a distinct topic. A material with good dielectric properties and fewer energy losses is the basic demand of the electronic industry. Barium tetra titanate ceramic material (BaTi4O9) is a prominent dielectric material with average permittivity and low losses. However, we report a Ca2+ substituted Barium tetra titanate (BaTi4O9) with enhancement in dielectric properties and reduction in losses (Ba1-xCax) T4O9 was prepared using the conventional solid-state solution technique. X-ray diffraction analysis confirmed the formation of the orthorhombic phase (with space group = Pnmm). A drastic change in grain size was observed by increasing the Ca2+ substitution. Dielectric properties have been measured at 4 GHz and found maximum dielectric constant = 40 and loss = 0.00014. The optimum electro-caloric response rises from 0.56 to 0.69 k at ΔE = 1.34 Vμm−1. The effect of substitution Ca2+ contents and microstructure on dielectric properties were analyzed using a precision impedance analyzer in a vast frequency range i.e. 4 Hz to 20 MHz. Enhanced dielectric properties with low energy losses made it a prominent material for energy storage devices.

In the present work, Zinc Oxide (ZnO) nanoparticles (NPs) were synthesized by the chemical co-precipitation method using Zinc Chloride as the initial chemical, while Nickel and Cobalt chloride as dopants. Phase identification of metal (Ni, Co) doped Zinc Oxide nanoparticles (NPs) was observed using x-ray diffraction (XRD). The small lattice distortion or phase changes appeared due to shifting of diffraction angles peaks towards larger angle in ZnO are corresponded to metal (Ni, Co) dopant. The average crystallite size appears to decrement in NP size from 7.67 nm to 6.52 nm and 5.35 nm to 5.17 nm with increasing 5 % to 80 % of metal (Ni, Co) dopant respectively. The optical characteristics, including the absorption spectra of the prepared sample were observed through UV–Vis spectroscopy, Meanwhile SEM confirmed the observation of composition change in specimen with metal (Ni, Co) dopant concentration. The bandgap value was also found decrement 5.23 eV to 5.05 eV with increment of metal (Ni, Co) dopant concentration. The functional groups were measured by Fourier transformation infrared spectroscopy (FTIR). FTIR peaks found the metal (Ni, Co) doped ZnO with the vibration mode of (Zn2+ –O2−) ions due to the increment of dopant concentrations. Furthermore, electrical results show the ohmic behavior of prepared samples. These findings indicate the possibility of tuning optical, structural and electrical properties of metal (Ni, Co) doped ZnO with various dopant concentrations of Nickel and will have great potential to find application in optoelectronic devices.