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An analytical model of electron transmittance and tunneling current in an anisotropic n+poly‐Si/HfO2/SiO2/Si (100) metal‐oxide‐semiconductor capacitor by including a trap between n+ and SiO2 interfaces has been derived. It considers the coupling of electron transverse and longitudinal motions and uses an Airy‐wavefunction approach. It has been shown that the tunneling current density increases as the trap becomes deeper or wider because many resonant states available in the quantum well.

A model for describing the electron transmittance and tunneling current in anisotropic MOS devices with a high‐k dielectric stack is studied by including the off‐diagonal effective‐mass tensor elements and the effect of coupling between transverse and longitudinal energies. The HfO2/SiO2 dual ultrathin layer is used as the gate oxide in an n+poly‐Si/oxide/Si capacitor. The main problem of using HfO2 is the charge trapping formed at the HfO2/SiO2 interface that can influence the performance of the device. In addition, without taking into account the effect of trap, the tunneling current in the n+‐poly Si/HfO2/SiO2/Si capacitor is almost zero at low bias voltage regime. Therefore, it is important to develop a model taking into account the presence of electron traps at the HfO2/SiO2 interface in the electron transmittance and tunneling current. In this paper, the effects of the electron incident angle and silicon substrate orientation on the transmittance and tunneling current are studied by utilizing the de...

The electron transmittance and tunneling current in n+poly Si/HfO2/SiO2/Si(100) capacitors with an electron trap created at the interface between HfO2 and SiO2 layer have been calculated by using a transfer‐matrix method. The electron motion was considered not only in a longitudinal direction but also in a transversal direction. The trap was modeled as a quantum well. It has been found that as the trap becomes deeper and wider, the transmittance and tunneling current get higher. It has also been found that the quantum well is able to generate a resonant tunneling and this resonant tunneling will result in an oscillatory behavior in the tunneling current.