Search

Your search keyword '"Mozharov, Alexey"' showing total 164 results
Start Over Author "Mozharov, Alexey"
164 results on '"Mozharov, Alexey"'

1. Electrical properties of highly-doped MBE-grown gallium phosphide nanowires

Author

Sharov, Vladislav, Novikova, Kristina, Mozharov, Alexey, Fedorov, Vladimir, Alekseev, Prokhor, and Mukhin, Ivan

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

Efficient doping of semiconductor nanowires remains a major challenge towards the commercialization of nanowire-based devices. In this work we investigate the growth regimes and electrical properties of MBE-grown p- and n-type gallium phosphide nanowires doped with Be and Si respectively. Electrical conductivity of individual nanowires is quantitatively studied via atomic force microscopy supported with numerical analysis. Based on conductivity measurements, we provide growth strategies for achieving the doping level up to 5E18 and 2E19 $cm^{-3}$ for GaP:Si and GaP:Be nanowires respectively, which is high enough to be demanded for technological applications.

Published
2024

2. Second harmonic generation and broad-band photoluminescence in mesoporous Si/SiO2 nanoparticles

Author

Mastalieva Viktoriia, Neplokh Vladimir, Aybush Arseniy, Stovpiaga Ekaterina, Eurov Daniil, Vinnichenko Maksim, Karaulov Danila, Kirillenko Demid, Mozharov Alexey, Sharov Vladislav, Kolchanov Denis, Machnev Andrey, Golubev Valery, Smirnov Alexander, Ginzburg Pavel, Makarov Sergey, Kurdyukov Dmitry, and Mukhin Ivan

Subjects
nonlinear nanophotonics, second harmonics, nanoparticles, silicon, broad-band photoluminescence, Physics, QC1-999
Abstract

Efficient second harmonic generation and broad-band photoluminescence from deeply subwavelength and nontoxic nanoparticles is essential for nanophotonic applications. Here, we explore nonlinear optical response from mesoporous Si/SiO2, SiO2, and Si nanoparticles, considering various fabrication and treatment procedures. We show that thermal annealing (including femtosecond laser treatment) of mesoporous Si/SiO2 nanoparticles provides the transformation of Si phase from amorphous to crystalline, enhancing the second harmonic and nonlinear photoluminescent response. Notably, the SiO2 mesoporous frame of the considered Si/SiO2 nanoparticles plays a dual positive role for the nonlinear process: it stabilizes the Si material, and SiO2:OH− material has a second-order nonlinearity itself and impacts to the observed second harmonic signal.

Published
2024
Full Text
View/download PDF

5. Crystal polarity discrimination for GaN nanowires on graphene

Author

Pavlov, Alexander, Mozharov, Alexey, Berdnikov, Yury, Barbier, Camille, Harmand, Jean-Christophe, Tchernycheva, Maria, Polozkov, Roman, and Mukhin, Ivan

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

We present experimental data and computational analysis of the formation of GaN nanowires on graphene virtual substrates. We show that GaN nanowires on graphene exhibit nitrogen polarity. We employ the DFT-based computational analysis to demonstrate that among different possible configurations of Ga and N atoms only the N-polar one is stable. We suggest that polarity discrimination occurs due to the dipole interaction between the GaN nanocrystal and $\pi$-orbitals of the graphene sheet., Comment: 21 pages, 5 figures, J. Mater. Chem. C, 2021

Published
2021
Full Text
View/download PDF

7. Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates

Author

Dvoretckaia Liliya, Mozharov Alexey, Goltaev Aleksandr, Fedorov Vladimir, and Mukhin Ivan

Subjects
indium arsenide, nanowire, heterostructure, silicon substrate, numerical calculation, Mathematics, QA1-939, Physics, QC1-999
Abstract

The paper presents the results of numerical simulation of the heterostructural diodes operation based on the array of indium arsenide nanowires on the silicon substrates with different polarities, namely n- or p-types. It has been found that it is possible to achieve theoretical values of the ideality factor equal to 1.1 and 2.1 respectively. The high quantum efficiency values are typical for the investigated heterostructures during separation of photogenerated charge carriers in the temperature range of 150–300 K.

Published
2024
Full Text
View/download PDF

9. Second harmonic generation and broad-band photoluminescence in mesoporous Si/SiO2 nanoparticles.

Author

Mastalieva, Viktoriia, Neplokh, Vladimir, Aybush, Arseniy, Stovpiaga, Ekaterina, Eurov, Daniil, Vinnichenko, Maksim, Karaulov, Danila, Kirillenko, Demid, Mozharov, Alexey, Sharov, Vladislav, Kolchanov, Denis, Machnev, Andrey, Golubev, Valery, Smirnov, Alexander, Ginzburg, Pavel, Makarov, Sergey, Kurdyukov, Dmitry, and Mukhin, Ivan

Subjects
SECOND harmonic generation, FEMTOSECOND lasers, NANOPARTICLES, PHOTOLUMINESCENCE, NANOPHOTONICS
Abstract

Efficient second harmonic generation and broad-band photoluminescence from deeply subwavelength and nontoxic nanoparticles is essential for nanophotonic applications. Here, we explore nonlinear optical response from mesoporous Si/SiO2, SiO2, and Si nanoparticles, considering various fabrication and treatment procedures. We show that thermal annealing (including femtosecond laser treatment) of mesoporous Si/SiO2 nanoparticles provides the transformation of Si phase from amorphous to crystalline, enhancing the second harmonic and nonlinear photoluminescent response. Notably, the SiO2 mesoporous frame of the considered Si/SiO2 nanoparticles plays a dual positive role for the nonlinear process: it stabilizes the Si material, and SiO2:OH− material has a second-order nonlinearity itself and impacts to the observed second harmonic signal. [ABSTRACT FROM AUTHOR]

Published
2024
Full Text
View/download PDF

10. Ultra-Low Intensity Light-Driven Ionic Conductivity through a Plasmonic Nanopore.

Author

Lebedev, Denis V., Vaulin, Nikita V., Afonicheva, Polina K., Vorobyov, Alexander A., Mozharov, Alexey M., Sharov, Vladislav A., Mikhailovskii, Vladimir Yu., Kirilenko, Demid A., Permyakov, Dmitry V., Logunov, Lev S., Ivanov, Yuri D., Ryzhkov, Ilya I., Bukatin, Anton S., Evstrapov, Anatoly A., Makarov, Sergey V., and Mukhin, Ivan S.

Abstract

Solid-state nanopore devices with plasmonic nanoantennas are powerful tools that allow for working with individual particles and molecules in solution as well as providing light-induced control of ionic current flow through them. However, the ionic current flow manipulation by light still requires high power densities and, thus, results in the optical heating of the nanopore. Here, we solve this problem by using a 5 nm nanopore in the gap of a plasmonic bow-tie nanoantenna on a SiNx membrane irradiated by a broadband spectrum of incident light. In this regime, photons are not only strongly localized around the nanopore but also efficiently excite and trap charge carriers on defect states in the band gap of the material of the nanopore walls. As a result, ionic current flow modulation is achieved with several orders of magnitude lower power densities (around 0.035 W/cm²) from a white-light lamp than in previous works employing spectrally narrow laser sources (100-105 W/cm²). The lamp irradiation causes a 21% increase in conductivity for a nanopore without a nanoantenna and a 35% increase in conductivity for a nanoantenna-decorated nanopore at the same power of irradiation. The revealed low-intensity approach for ionic current control is preferable for the study of biological objects. [ABSTRACT FROM AUTHOR]

Published
2024
Full Text
View/download PDF

11. Parametric Optothermal Modulation of Carbon Nanooscillator Decorated with Mie Resonant Silicon Particle.

Author

Nadoyan, Irina V., Solomonov, Nikita A., Novikova, Kristina N., Pavlov, Alexander V., Sharov, Vladislav A., Mozharov, Alexey M., Permyakov, Dmitry V., Shkoldin, Vitalii A., Kislov, Denis A., Shalin, Alexander S., Golubok, Alexander O., Petrov, Mikhail I., and Mukhin, Ivan S.

Subjects
NANOELECTROMECHANICAL systems, SILICON nanowires, NANOPARTICLES, DEGREES of freedom, RAMAN scattering, MIE scattering, SILICON
Abstract

Nanomechanical resonators provide a versatile platform for nanoscale mass sensing and force microscopy, as well as for enhancing light‐matter interaction offering unique functionality for optomechanical applications. In this way, discovering new approaches for coupling light with the mechanical degrees of freedom opens the strong desire paths for further developing of nanomechanical technology. Here, the parametric optothermal modulation of hybrid nanomechanical systems consisting of carbon nanowire with a silicon nanoparticle on its top, is reported. The mechanism of the modulation is based on the periodic optical heating of the nanowire and further modulation of the elasticity parameters. Utilizing the silicon nanoparticle provides additional functionality owing to optical absorption enhanced with Mie resonance and the unique feature of optical Raman thermometry enabling optical monitoring of local temperature. It is shown that the parametric mechanism of modulation allows for a significant increase of the optomechanical coupling strength. [ABSTRACT FROM AUTHOR]

Published
2024
Full Text
View/download PDF

12. Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics

Author

Kaveev, Andrey K., primary, Fedorov, Vladimir V., additional, Pavlov, Alexander V., additional, Miniv, Dmitry V., additional, Ustimenko, Ratmir V., additional, Goltaev, Aleksandr, additional, Dvoretckaia, Liliia. N., additional, Mozharov, Alexey M., additional, Fedina, Sergey V., additional, Kirilenko, Demid A., additional, Vinnichenko, Maxim Ya., additional, Mynbaev, Karim J., additional, and Mukhin, Ivan S., additional

Published
2024
Full Text
View/download PDF

13. Controllable Femtosecond Laser-Induced Dewetting for Plasmonic Applications

Author

Makarov, Sergey V., Milichko, Valentin A., Mukhin, Ivan S., Shishkin, Ivan I., Zuev, Dmitriy A., Mozharov, Alexey M., Krasnok, Alexander E., and Belov, Pavel A.

Subjects
Physics - Optics
Abstract

Dewetting of thin metal films is one of the most widespread method for functional plasmonic nanostructures fabrication. However, simple thermal-induced dewetting does not allow to control degree of nanostructures order without additional lithographic process steps. Here we propose a novel method for lithography-free and large-scale fabrication of plasmonic nanostructures via controllable femtosecond laser-induced dewetting. The method is based on femtosecond laser surface pattering of a thin film followed by a nanoscale hydrodynamical instability, which is found to be very controllable under specific irradiation conditions. We achieve control over degree of nanostructures order by changing laser irradiation parametrs and film thickness. This allowed us to exploit the method for the broad range of applications: resonant light absorbtion and scattering, sensing, and potential improving of thin-film solar cells., Comment: to be published in Laser and Photonics Reviews. arXiv admin note: substantial text overlap with arXiv:1505.03041

Published
2015

14. Tuning of magnetic optical response in a dielectric nanoparticle by ultrafast photo-injection of dense electron-hole plasma

Author

Makarov, Sergey, Kudryashov, Sergey, Mukhin, Ivan, Mozharov, Alexey, Milichko, Valentin, Krasnok, Alexander, and Belov, Pavel

Subjects
Physics - Optics
Abstract

We propose a novel approach for efficient tuning of optical properties of a high refractive index subwavelength nanoparticle with a magnetic Mie-type resonance by means of femtosecond laser irradiation. This concept is based on ultrafast photo-injection of dense (>10^20 cm^-3) electron-hole plasma within such nanoparticle, drastically changing its transient dielectric permittivity. This allows to manipulate by both electric and magnetic nanoparticle responses, resulting in dramatic changes of its scattering diagram and scattering cross section. We experimentally demonstrate 20 % tuning of reflectance of a single silicon nanoparticle by femtosecond laser pulses with wavelength in the vicinity of the magnetic dipole resonance. Such single-particle nanodevice enables to design fast and ultracompact optical switchers and modulators., Comment: arXiv admin note: substantial text overlap with arXiv:1505.05185

Published
2015

15. Simple Method for Large-Scale Fabrication of Plasmonic Structures

Author

Makarov, Sergey V., Milichko, Valentin A., Mukhin, Ivan S., Shishkin, Ivan I., Mozharov, Alexey M., Krasnok, Alexander E., and Belov, Pavel A.

Subjects
Physics - Optics
Abstract

A novel method for single-step, lithography-free, and large-scale laser writing of nanoparticle-based plasmonic structures has been developed. Changing energy of femtosecond laser pulses and thickness of irradiated gold film it is possible to vary diameter of the gold nanoparticles, while the distance between them can be varied by laser scanning parameters. This method has an advantage over the most previously demonstrated methods in its simplicity and versatility, while the quality of the structures is good enough for many applications. In particular, resonant light absorbtion/scattering and surface-enhanced Raman scattering have been demonstrated on the fabricated nanostructures.

Published
2015

19. Conductivity-based approach to estimate average bundle length in randomly oriented network of single-walled carbon nanotubes

Author

Pavlov, Alexander, primary, Mitin, Dmitry, additional, Vorobyev, Alexander, additional, Raudik, Sergey, additional, Berdnikov, Yury, additional, Mozharov, Alexey, additional, Mikhailovskii, Vladimir, additional, Krasnikov, Dmitry V., additional, Kopylova, Daria S., additional, Polozkov, Roman, additional, Nasibulin, Albert G., additional, and Mukhin, Ivan, additional

Published
2023
Full Text
View/download PDF

21. Nonlinear polaritons in a monolayer semiconductor coupled to optical bound states in the continuum

Author

Kravtsov, Vasily, Khestanova, Ekaterina, Benimetskiy, Fedor A., Ivanova, Tatiana, Samusev, Anton K., Sinev, Ivan S., Pidgayko, Dmitry, Mozharov, Alexey M., Mukhin, Ivan S., Lozhkin, Maksim S., Kapitonov, Yuri V., Brichkin, Andrey S., Kulakovskii, Vladimir D., Shelykh, Ivan A., Tartakovskii, Alexander I., Walker, Paul M., Skolnick, Maurice S., Krizhanovskii, Dmitry N., and Iorsh, Ivan V.

Published
2020
Full Text
View/download PDF

23. Non-Uniformly Strained Core–Shell InAs/InP Nanowires for Mid-Infrared Photonic Applications

Author

Fedorov, Vladimir, primary, Vinnichenko, Maxim, additional, Ustimenko, Ratmir, additional, Kirilenko, Demid, additional, Pirogov, Evgeny, additional, Pavlov, Alexander, additional, Polozkov, Roman, additional, Sharov, Vladislav, additional, Kaveev, Andrey, additional, Miniv, Dmitry, additional, Dvoretckaia, Liliia, additional, Firsov, Dmitry, additional, Mozharov, Alexey, additional, and Mukhin, Ivan, additional

Published
2023
Full Text
View/download PDF

25. Half-Ring Microlasers Based on InGaAs Quantum Well-Dots with High Material Gain

Author

Zubov, Fedor, primary, Moiseev, Eduard, additional, Maximov, Mikhail, additional, Vorobyev, Alexander, additional, Mozharov, Alexey, additional, Shernyakov, Yuri, additional, Kalyuzhnyy, Nikolay, additional, Mintairov, Sergey, additional, Kulagina, Marina, additional, Dubrovskii, Vladimir, additional, Kryzhanovskaya, Natalia, additional, and Zhukov, Alexey, additional

Published
2023
Full Text
View/download PDF

27. Thermal characteristics of III-V microlasers bonded onto silicon board

Author

Dragunova, Anna, Kryzhanovskaya, Natalia, Zubov, Fedor, Moiseev, Eduard, Nadtochiy, Alexey, Fominykh, Nikita, Ivanov, Konstantin, Maximov, Mikhail, Vorobyev, Alexandr, Mozharov, Alexey, Kalyuzhnyy, Nikolay, Gordeev, Nikita, Guseva, Yulia, Kulagina, Marina, and Zhukov, Alexey

Subjects
квантовые яма-точки, тепловое сопротивление, hybrid integration, thermal resistance, microlaser, микролазер, quantum well dots, гибридная интеграция
Abstract

In this work, we study the characteristics of semiconductor microlasers based on the heterostructure with two coupled waveguides intended to improve heat dissipation in cw regime. We analysed total output optical loss of the microlasers, their spectral characteristics, output power, emission pattern and thermal resistance. We observed that the use of the principle of two coupled resonant planar waveguides, active and passive, as well as p-side down bonding, significantly reduces the thermal resistance of microlasers and improves their performance., В данной работе исследуются характеристики полупроводниковых микролазеров на основе гетероструктуры с двумя связанными волноводами, предназначенных для улучшения теплоотвода в непрерывном режиме. Были проанализированы полные выходные оптические потери микролазеров, их спектральные характеристики, выходная мощность, диаграмма направленности излучения и тепловое сопротивление. Отметим, что использование принципа двух связанных резонансных планарных волноводов, активного и пассивного, а также соединения p-стороной вниз значительно снижает тепловое сопротивление микролазеров и улучшает их характеристики.

Published
2023
Full Text
View/download PDF

28. Interband photoluminescence of InAs(P)/Si nanowires

Author

Ustimenko, Ratmir, Vinnichenko, Maxim, Karaulov, Danila, Firsov, Dmitry, Fedorov, Vladimir, Mozharov, Alexey, Kirilenko, Demid, and Mukhin, Ivan

Subjects
пассивация поверхности, нитевидные нанокристаллы ядро/оболочка, nanowires, нитевидные нанокристаллы, photoluminescence, passivation, фотолюминесценция, core/shell nanowires
Abstract

Semiconductor nanowires have a number of advantages over thin films and bulk analogues, which allow them to be used to develop efficient detectors and light sources. In this work, photoluminescence spectra of pure InAs and core-shell InAs/CaF2 and InAs/InP nanowires on silicon were studied in the near infrared spectral range at various levels of optical pumping and at different temperatures using a vacuum Fourier spectrometer operating in a step-scan mode. The observed peaks in the photoluminescence spectra correspond to interband transitions in InAs of sphalerite and wurtzite phases. The photoluminescence spectra of CaF2-coated InAs nanowires demonstrated that surface passivation with CaF2 does not change the spectral features. It was shown that the absolute value of photoluminescence intensity of InAs-core/InP-shell nanowires exceeds the intensity of pure InAs nanowires. It means that surface passivation can reduce an effect of surface states in nanowires on their optical properties., Нитевидные полупроводниковые нанокристаллы имеют ряд преимуществ по сравнению с пленками и объемными полупроводниковыми материалами, которые позволяют использовать их для создания эффективных детекторов и источников излучения. В настоящей работе были получены спектры фотолюминесценции радиально гетероструктурированных нитевидных нанокристаллов InAs, InAs/CaF2 и InAs/InP (ядро/оболочка) в ближнем инфракрасном диапазоне при различных уровнях оптической накачки и различных температурах при помощи вакуумного фурье-спектрометра, работающего в пошаговом режиме. Обнаруженные в спектрах пики объяснены межзонными переходами носителей заряда в InAs разной кристаллической модификации: сфалерит и вюрцит. Из спектров нитевидных нанокристаллов, покрытых CaF2, видно, что в этом случае пассивация поверхности не изменяет спектральные особенности люминесценции. В то же время интенсивность фотолюминесценции нитевидных нанокристаллов InAs/InP больше, чем у чистых нитевидных нанокристаллов InAs. Таким образом, поверхностная пассивация может уменьшить влияние поверхностных состояний на оптические свойства нитевидных нанокристаллов.

Published
2023
Full Text
View/download PDF

31. Half-disk lasers with active region based on InGaAs/GaAs quantum well-dots

Author

Zubov, Fedor I, primary, Moiseev, Eduard I, additional, Maximov, Mikhail V, additional, Vorobyev, Alexandr A, additional, Mozharov, Alexey M, additional, Shernyakov, Yuri M, additional, Kalyuzhnyy, Nikolay A, additional, Mintairov, Sergey A, additional, Kulagina, Marina M, additional, Dubrovskii, Vladimir G, additional, Kryzhanovskaya, Natalia V, additional, and Zhukov, Alexey E, additional

Published
2022
Full Text
View/download PDF

32. Prospects of Application of Ultramicroelectrode Ensembles for Voltammetric Determination of Compounds with Close Standard Electrode Potentials and Different Diffusion Coefficients

Author

Arbenin, Andrey Yu., primary, Petrov, Alexey A., additional, Nazarov, Denis V., additional, Serebryakov, Evgeny, additional, Kirichenko, Sergey O., additional, Vlasov, Petr S., additional, Zemtsova, Elena G., additional, Smirnov, Vladimir M., additional, Danilova, Elena E., additional, Ermakov, Sergey S., additional, Vorobyov, Alexander, additional, Mukhin, Mikhail S., additional, and Mozharov, Alexey M., additional

Published
2022
Full Text
View/download PDF

33. Tuning the Optical Properties and Conductivity of Bundles in Networks of Single-Walled Carbon Nanotubes

Author

Mitin, Dmitry, primary, Vorobyev, Alexandr, additional, Pavlov, Alexander, additional, Berdnikov, Yury, additional, Mozharov, Alexey, additional, Mikhailovskii, Vladimir, additional, Ramirez B, Javier A., additional, Krasnikov, Dmitry V., additional, Kopylova, Daria S., additional, Kirilenko, Demid A., additional, Vinnichenko, Maxim, additional, Polozkov, Roman, additional, Nasibulin, Albert G., additional, and Mukhin, Ivan, additional

Published
2022
Full Text
View/download PDF

36. Improvement of thermal resistance in InGaAs/GaAs/AlGaAs microdisk lasers bonded onto silicon

Author

Zubov, Fedor I, primary, Moiseev, Eduard, additional, Nadtochiy, Alexey, additional, Fominykh, Nikita, additional, Ivanov, Konstantin, additional, Makhov, Ivan Sergeevich, additional, Dragunova, Anna, additional, Maximov, Mikhail, additional, Vorobyev, Alexandr, additional, Mozharov, Alexey M, additional, Mintairov, Sergey, additional, Kalyuzhnyy, Nikolay, additional, Gordeev, Nikita, additional, Kryzhanovskaya, Natalia V, additional, and Zhukov, Alexey, additional

Published
2022
Full Text
View/download PDF

42. Second harmonic generation in hybrid GaP/Au nanocylinders

Author

Pidgayko, Dmitry, primary, Deriy, Ilya, additional, Fedorov, Vladimir, additional, Mozharov, Alexey, additional, Mukhin, Ivan, additional, Zadiranov, Yuriy, additional, Petrov, Mihail, additional, Samusev, Anton, additional, and Bogdanov, Andrey, additional

Published
2021
Full Text
View/download PDF

43. DFT analysis of crystal polarity on graphene surface

Author

Pavlov, Alexander, primary, Mozharov, Alexey, additional, Berdnikov, Yury, additional, Barbier, Camille, additional, Harmand, Jean-Christophe, additional, Tchernycheva, Maria, additional, Polozkov, Roman, additional, and Mukhin, Ivan, additional

Published
2021
Full Text
View/download PDF

44. Flexible Perovskite CsPbBr3 Light Emitting Devices Integrated with GaP Nanowire Arrays in Highly Transparent and Durable Functionalized Silicones

Author

Miroshnichenko, Anna S., primary, Deriabin, Konstantin V., additional, Baeva, Maria, additional, Kochetkov, Fedor M., additional, Neplokh, Vladimir, additional, Fedorov, Vladimir V., additional, Mozharov, Alexey M., additional, Koval, Olga Yu., additional, Krasnikov, Dmitry V., additional, Sharov, Vlad A., additional, Filatov, Nikita A., additional, Gets, Dmitry S., additional, Nasibulin, Albert G., additional, Makarov, Sergey V., additional, Mukhin, Ivan S., additional, Kukushkin, Vadim Yu., additional, and Islamova, Regina M., additional

Published
2021
Full Text
View/download PDF

45. Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes

Author

Neplokh, Vladimir, primary, Fedorov, Vladimir, additional, Mozharov, Alexey, additional, Kochetkov, Fedor, additional, Shugurov, Konstantin, additional, Moiseev, Eduard, additional, Amador-Mendez, Nuño, additional, Statsenko, Tatiana, additional, Morozova, Sofia, additional, Krasnikov, Dmitry, additional, Nasibulin, Albert G., additional, Islamova, Regina, additional, Cirlin, George, additional, Tchernycheva, Maria, additional, and Mukhin, Ivan, additional

Published
2021
Full Text
View/download PDF

47. Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy.

Author

Baranov, Artem I., Gudovskikh, Alexander S., Kudryashov, Dmitry A., Lazarenko, Alexandra A., Morozov, Ivan A., Mozharov, Alexey M., Nikitina, Ekaterina V., Pirogov, Evgeny V., Sobolev, Maxim S., Zelentsov, Kirill S., Egorov, Anton Yu., Darga, Arouna, Le Gall, Sylvain, and Kleider, Jean-Paul

Subjects
INDIUM gallium arsenide nitride, MOLECULAR beam epitaxy, SPACE charge, GALLIUM arsenide wafers, PHOTOELECTRICITY
Abstract

The defect properties of InGaAsN dilute nitrides grown as sub-monolayer digital alloys (SDAs) by molecular beam epitaxy for photovoltaic application were studied by space charge capacitance spectroscopy. Alloys of i-InGaAsN (Eg = 1.03 eV) were lattice-matched grown on GaAs wafers as a superlattice of InAs/GaAsN with one monolayer of InAs (<0.5 nm) between wide GaAsN (7–12 nm) layers as active layers in single-junction solar cells. Low p-type background doping was demonstrated at room temperature in samples with InGaAsN layers 900 nm and 1200 nm thick (less 1 × 1015 cm−3). According to admittance spectroscopy and deep-level transient spectroscopy measurements, the SDA approach leads to defect-free growth up to a thickness of 900 nm. An increase in thickness to 1200 nm leads to the formation of non-radiative recombination centers with an activation energy of 0.5 eV (NT = 8.4 × 1014 cm−3) and a shallow defect level at 0.20 eV. The last one leads to the appearance of additional doping, but its concentration is low (NT = 5 × 1014 cm−3) so it does not affect the photoelectric properties. However, further increase in thickness to 1600 nm, leads to significant growth of its concentration to (3–5) × 1015 cm−3, while the concentration of deep levels becomes 1.3 × 1015 cm−3. Therefore, additional free charge carriers appearing due to ionization of the shallow level change the band diagram from p-i-n to p-n junction at room temperature. It leads to a drop of the external quantum efficiency due to the effect of pulling electric field decrease in the p-n junction and an increased number of non-radiative recombination centers that negatively impact lifetimes in InGaAsN. [ABSTRACT FROM AUTHOR]

Published
2018
Full Text
View/download PDF

48. Single GaN nanowire for extremely high current commutation

Author

Shugurov, Konstantin, Mozharov, Alexey, Sapunov, Georgy, Fedorov, Vladimir, Tchernycheva, Maria, Mukhin, Ivan, Tchernycheva, Maria, Alferov university (former St Petersburg Academic university), Khlopina 8/3, 194021, St. Petersburg, Russia, Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
power electronics, nanowires, MBE, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Si, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], GaN
Abstract

International audience; An array of GaN nanowires (NWs) on Si substrate are synthesized by molecular beam epitaxy. Measurements of electrical properties at room temperature of single nanowires transferred to an auxiliary substrate demonstrate that current density reaches an extremely high level of 2 MA cm-2 without NW damage. Taking into account the limited conductivity of NW periphery due to electron surface states, i.e. the conduction channel narrowing, the effective current density can reach 3 MA cm-2 .

Published
2021

Catalog

Books, media, physical & digital resources
See catalog results