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The purposes of this study were to evaluate the effect of implementation of institutional guidelines for low emetic risk chemotherapy with docetaxel and estimate the cost saving for all low emetic risk chemotherapies. We examined the clinical effect of preparing and implementing institutional antiemetic guidelines for the breast cancer patients receiving adjuvant docetaxel therapy. Although the antiemetic medication for such patients used to be ondansetron 4 mg plus dexamethasone 8 mg (OND + DEX), it was changed to dexamethasone (DEX) 12 mg alone after implementation of the institutional guidelines. The effectiveness and adverse effects of DEX alone (56 patients, 205 courses) were compared with those of OND + DEX (41 patients, 151 courses). The cost saving was calculated from the antiemetic costs in both groups. The annual cost saving was estimated from the number of all low emetic risk chemotherapies in a year. The incidences of nausea (19.5% versus 16.1%), vomiting (2.4% versus 0%), constipation (34.1% versus 30.4%), and insomnia (17.1% versus 17.9%) were not significantly different between the OND + DEX group and DEX alone group. In all low emetic risk chemotherapies, US $78,883 of potential cost saving was estimated in the first year after changing the antiemetic treatment. The present results suggest that DEX alone is equally effective for preventing nausea and vomiting and less expensive compared with a 5-HT3 receptor antagonist plus DEX in low emetic risk chemotherapy with docetaxel.

When the channel width of an FET becomes of the same order of magnitude as the depth of the gate depletion region, an increase of threshold voltage is observed. This narrow-channel effect has been applied successfully in creating an asymmetric potential well under an electrode for two phase CCD operations. The feasibility of this new structure has been confirmed in a 242 element analog delay line and the application is now extended to a 380H × 488V CCD Imager. In the constructed B/W CCD camera.

インターライン型CCDを3個用いたカラーカメラの試作検討結果の報告を行う.CCDには, センサー電極に透明電極を採用し, 埋め込みチャンネル型レジスター, オーバーフロードレインを採用した226 (H) × 492 (V) の絵素を有するものを用い, 空間絵素ずらし撮像法によって実用的な解像度を得るカメラを試作した.CCDの特性とレジストレーション, 小型化に伴う問題点に関して述べることにしたい.

A semi-insulating polycrystalline-silicon (SIPOS) film doped with oxygen atoms is deposited on the surface of silicon substrates by a chemical vapor reaction of silane and nitrous oxide in nitrogen ambient, and has been studied for the surface passivation of MOS-IC's, in particular, C/MOS-IC's of channel-stopperless structure. SIPOS films are semi-insulating and intrinsically neutral. A double-layer system consisting of 3000 A SIPOS and 6000 A SiO2 films is employed as a replacement of a thick silicon dioxide layer in C/MOS-IC's of channel-stopperless structure and exhibits excellent field-passivating properties, namely, a small drain-source leakage current, a high drain breakdown voltage, and a high parasitic threshold voltage. Furthermore, the silicon surface passivated by SIPOS films shows high stability under a severe bias-temperature stress. It is concluded that C/MOS-IC's passivated by SIPOS films are not required to have a channelstopper diffusion region and can be operated at high applied voltages, which leads to higher integrating density and higher reliability.