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Your search keyword '"Mostefaoui, Mohammed"' showing total 27 results
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27 results on '"Mostefaoui, Mohammed"'

2. Detecting Partial Shading in Grid-Connected PV Station Using Random Forest Classifier

Author

Ziane, Abderrezzaq, Dabou, Rachid, Sahouane, Noredine, Necaibia, Ammar, Mostefaoui, Mohammed, Bouraiou, Ahmed, Slimani, Abdeljalil, Kacprzyk, Janusz, Series Editor, Gomide, Fernando, Advisory Editor, Kaynak, Okyay, Advisory Editor, Liu, Derong, Advisory Editor, Pedrycz, Witold, Advisory Editor, Polycarpou, Marios M., Advisory Editor, Rudas, Imre J., Advisory Editor, Wang, Jun, Advisory Editor, and Hatti, Mustapha, editor

Published
2021
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16. Degradation Analysis of M-C-Si PV Modules After Long Term Exposure Under Desert Climate

Author

Mostefaoui Mohammed, Sahouane Nordine, Ammar Necaibia, Abderrezzaq Ziane, Bouraiou Ahmed, and Rachid Dabou

Subjects
Water pumping, Maximum power principle, Open-circuit voltage, Desert climate, 020209 energy, Long period, Photovoltaic system, 0202 electrical engineering, electronic engineering, information engineering, Environmental engineering, Environmental science, Degradation (geology), 02 engineering and technology, Term (time)
Abstract

The goal of this paper is to analyze and assess the degradation of mono-crystalline-silicon PV modules of solar photovoltaic water pumping installation after long period exposure under Saharan climate based on visual inspection. The degradation in the electrical parameters like Maximum power (Pm), short-circuit current (Isc), open circuit voltage (Voc) and Fill factor FF is evaluated using MP-160 I-V tracer

Published
2018

17. Impact of dust accumulation on PV panel performance in the Saharan region

Author

Bouraio Ahmed, Dabou Rachid, Ziane Abderrezzaq, Necaibia Ammar, Mostefaoui Mohammed, and Sahouane Nordine

Subjects
Work (thermodynamics), Discretization, 020209 energy, Photovoltaic system, Finite difference, 02 engineering and technology, Mechanics, Poisson distribution, law.invention, Monocrystalline silicon, symbols.namesake, law, Solar cell, 0202 electrical engineering, electronic engineering, information engineering, symbols, Environmental science, Voltage
Abstract

In this work, we present modeling the dust effect on the monocrystalline silicon Photovoltaic Panel (Sharp NT-R5E3E175W) in Saharan region (Adrar, Algeria) the model can be used to develop a simulation program. Its principle is based on the self-consistent iterative numerical solution of the Poisson and continuity and the transport equations. The discretization method used is that of finite differences. The parameters characterizing the solar cell such as short-circuit current, open-circuit voltage, fill factor, efficiency will be deducted from the simulated current-voltage characteristics. To validate the effectiveness of this numerical model, we will compare the simulation results with experimental measurements. Sufficient agreement was observed when we compared the experimental results of the photovoltaic panel.

Published
2017

24. Impact de la dyslipidémie sur l'hypertension artérielle

Author

BENADDA, Hafsa Meryem, MOSTEFAOUI, Mohammed, OUADAH, Mohammed Et-Amine, and TAYEB, Azzeddine

Subjects
dyslipidémie, 'hypertension artérielle, l'hypertension
Abstract

En somme, toute dyslipidémie permettrait de prédire la survenue ultérieure d'une hypertension artérielle, d'où l'intérêt de la surveillance clinique mais surtout biologique, en réalisant périodiquement un bilan lipidique, qui faciliterait le dépistage et la prévention en matière de facteur de risque cardiovasculaire en plus d'intervenir suffisamment tôt , pour pouvoir diminuer la morbidité et la mortalité liées à l'installation d'une hypertension artérielle ainsi que de ses complications. 68

Published
2013

27. Optimization of two‐dimensional electron gas characteristics of AlGaN/GaN high electron mobility transistors.

Author

Douara, Abdelmalek, Djellouli, Bouaza, Abid, Hamza, Rabehi, Abdelaziz, Ziane, Abderrezzaq, Mostefaoui, Mohammed, Ben Toumi, Ahmed, and Dif, Naas

Subjects
ELECTRON gas, ALUMINUM gallium nitride, MODULATION-doped field-effect transistors, STRUCTURAL optimization, SCHRODINGER equation
Abstract

In this work, we present a physics‐based model for a two‐dimensional electron gas (2‐DEG) density at heterointerface in AlGaN/GaN high electron mobility transistor (HEMT). One‐dimensional Schrödinger‐Poisson equations are solved self‐consistently using a nonuniform mesh within the framework of the nextnano device simulation software. The 2‐DEG density of AlGaN/GaN HEMT is investigated through the dependence of electron concentrations on various structural parameters such as barrier layer thickness, doping concentration, and the Al content. We report calculations of gate capacitance from charge density characteristics with respect to gate voltage. Good agreement between calculation and experiment is found. [ABSTRACT FROM AUTHOR]

Published
2019
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