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1. Finite temperature effects on the structural stability of Si-doped HfO$_{2}$ using first-principles calculations

5. Systematic Search for Stabilizing Dopants in ZrO₂ and HfO₂ Using First-Principles Calculations.

7. Impact of Cation Vacancies on Leakage Current on TiN/ZrO2/TiN Capacitors Studied by Positron Annihilation

11. Particle reduction and control in plasma etching equipment

17. Guest Editorial Special section on the 2022 International Symposium on Semiconductor Manufacturing.

18. Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes.

27. Vacancy-Type Defects Introduced by Gas Cluster Ion-Implantation on Si Studied by Monoenergetic Positron Beams

47. Defects in Ion-Implanted 3C–SiC Probed by a Monoenergetic Positron Beam

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