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15 results on '"Morancho, Frederic"'

3. Toward an Innovative Monolithic Integration of Vertical and Lateral GaN Devices

Author

Zaidan, Zahraa, Al Taradeh, Nedal, Rodriguez, Christophe, Jaouad, Abdelatif, Soltani, Ali, Tasselli, Josiane, Planson, Dominique, Maher, Hassan, Isoird, Karine, Luong, Viet, Sonneville, Camille, Cordier, Yvon, Morancho, Frederic, Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Équipe Intégration de Systèmes de Gestion de l'Énergie (LAAS-ISGE), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)

Subjects
vertical GaN FinFET, GaN HEMT vertical GaN FinFET TCAD-Sentaurus isolation highly doped GaN integrated circuits, GaN HEMT, [SPI.NRJ]Engineering Sciences [physics]/Electric power, TCAD-Sentaurus, highly doped GaN, isolation, integrated circuits
Abstract

International audience; This work presents an innovative technology where GaN-based vertical and lateral devices are monolithically integrated. Indeed, this technology will enable to drive high-power switching devices (vertical GaN power FinFETs) using lateral GaN HEMTs with minimum losses and high stability. The main challenge of this technology is the electrical isolation between these two devices. In this paper, a new isolation approach is presented to avoid any degradation of the lateral transistor performance. In fact, the high voltage applied at the drain of the vertical GaN power FinFET can drastically affect the drain current of the lateral GaN HEMT. To overcome this problem, a highly doped n + GaN layer is inserted between the epi-layers of these two devices. TCAD-Sentaurus simulator is used to validate this new approach. Indeed, this highly n-doped GaN layer is blocking the vertical high electrical field and preventing any depletion of the 2D gas of the lateral GaN HEMT. To the best of our knowledge, it is the first time where the vertical and lateral GaN devices are integrated within the same technology.

Published
2022

6. Multiphysics Characterizations of Vertical GaN Schottky Diodes

Author

N'Dohi, Atse Julien Eric, primary, Sonneville, Camille, additional, Saidi, Soufiane, additional, Ngo, Thi Huong, additional, De Mierry, Philippe, additional, Frayssinet, Eric, additional, Cordier, Yvon, additional, Phung, Luong Viet, additional, Morancho, Frederic, additional, Isoird, Karine, additional, Tasselli, Josiane, additional, Maher, Hassan, additional, and Planson, Dominique, additional

Published
2022
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8. Thermal behavior of a superjunction MOSFET in a high-current conduction

Author

Roig, Jaume, Stefanov, Evgueniy, and Morancho, Frederic

Subjects
Metal oxide semiconductor field effect transistors -- Design and construction, Short circuits -- Analysis, Circuit design -- Analysis, Circuit designer, Integrated circuit design, Business, Electronics, Electronics and electrical industries
Abstract

A detailed study is presented of the superjunction MOSFET (SJ-MOSFET) thermal behavior on high-current conduction. The heat-generation (HG) process and its dependence on device geometry and biasing conditions are elucidated from numerical-simulation tools firstly and then the resultant temperature distribution is evaluated by simulation.

Published
2006

10. Advantages and Challenges of Plasma Immersion Ion Implantation for Power Devices Manufacturing on Si, SiC and GaN using PULSION® Tool

Author

Torregrosa, Frank, primary, Spiegel, Yohann, additional, Roux, Laurent, additional, Sempere, Guillaume, additional, Borvon, Gael, additional, Wuebben, Thomas, additional, Schustereder, Werner, additional, Jelinek, Moriz, additional, Morancho, Frederic, additional, Godignon, Philippe, additional, and Zielinski, Marcin, additional

Published
2018
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